IRHSNA53064 [INFINEON]

RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT(SMD-2); RAD- HARD同步整流器表面贴装（ SMD - 2 ）


型号：	IRHSNA53064
厂家：	Infineon
描述：	RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT(SMD-2) RAD- HARD同步整流器表面贴装（ SMD - 2 ）晶体晶体管功率场效应晶体管开关脉冲
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PD-94323C

RAD-HARD

SYNCHRONOUS RECTIFIER

SURFACE MOUNT (SMD-2)

IRHSNA57064

60V, N-CHANNEL

Product Summary

Part Number

Radiation Level RDS(on)

IRHSNA57064 100K Rads (Si) 5.6mΩ 160nC

IRHSNA53064 300K Rads (Si) 5.6mΩ 160nC

IRHSNA54064 600K Rads (Si) 5.6mΩ 160nC

IRHSNA58064 1000K Rads (Si) 6.5mΩ 160nC

SMD-2

Description:

The SynchFet family of Co-Pack RAD-Hard MOSFETs

and Schottky diodes offers the designer an innovative,

board space saving solution for switching regulator and

power management applications.RAD-Hard MOSFETs

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area.Combining

this technology with International Rectifier’s low forward

drop Schottky rectifiers results in an extremely efficient

device suitable for use in a wide variety of Military and

Space applications.

Features:

Co-Pack N-channel RAD-Hard MOSFET

and Schottky Diode

Ideal for Synchronous Rectifiers in DC-DC

Converters up to 75A Output

Low Conduction Losses

Low Switching Losses

Low Vf Schottky Rectifier

Refer to IRHSLNA57064 for Lower Inductance

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain or Source Current

75*

= 12V, T = 100°C Continuous Drain or Source Current

75*

300

Pulsed Drain Current ➀

@ T = 25°C

Max. Power Dissipation

250

W/°C

Linear Derating Factor

2.0

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

370

Repetitive Avalanche Energy ➀

Schottky and Body Diode Avg. Forward Current ➀

Opeating and Storage Temperature Range

(AV)@ T = 25°C

75*

(AV)@ T =100°C

75*

-55 to 150

J, STG

°C

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

3.3 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

07/30/02

IRHSNA57064

Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

Static Drain-to-Source On-State

Resistance

—

= 0V, I = 1.0mA

DSS

mΩ

= 12V, I = 45A

DS(on)

5.6

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

2.0

—

4.0

—

S ( )

µA

= V

> 15V, I

= 1.0mA

= 45A

GS(th)

GS, D

Ω

= 48V, V =0V

DS GS

DSS

—

= 48V,

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

100

-100

160

= 20V

GSS

—

= -20V

=12V, I =45A,

GS D

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

= 30V

—

d(on)

—

= 30V, I = 45A,

—

125

=12V, R = 2.35Ω

Turn-Off Delay Time

Fall Time

—

d(off)

+ L

Total Inductance

7.03

—

Measured from center of drain

pad to center of source pad

Schottky Diode & Body Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Diode Forward Voltage

—

0.93

0.9

= -55°C, I =45A, V

= 0V

= 25°C, I = 45A, V

—

0.82

100

210

—

= 125°C, I =45A, V

Reverse Recovery Time

T = 25°C, I =45A, di/dt ≤ 100A/µs

Reverse Recovery Charge

—

≤ 30V

+ L Total Inductance

8.09

Measured from center of drain pad to

center of source pad (for Schottky only)

Forward Turn-On Time

Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

thJC

Junction-to-Case (MOSFET)

Junction-to-Case (Schottky)

—

0.5

0.7

°C/W

Note: Corresponding Spice and Saber models are available on the Website.

For footnotes refer to the last page

www.irf.com

Radiation Characteristics

IRHSNA57064

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test condi-

tions in order to provide a direct comparison.

Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀

➀

Parameter

Up to 600K Rads(Si)¹1000K Rads (Si)²Units

Test Conditions

Min

Max

Min

Max

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

2.0

—

4.0

1.5

—

4.0

100

-100

= 0V, I = 1.0mA

DSS

= V , I = 1.0mA

GS(th)

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

100

-100

= 20V

GSS

DSS

—

= -20 V

—

µA

=48V, V

=0V

DS(on)

Static Drain-to-Source

On-State Resistance (TO-3)

Static Drain-to-Source

On-State Resistance (SMD-2)

Diode Forward Voltage

➀

—

6.1

—

7.1

mΩ

= 12V, I =45A

➀

—

5.6

1.3

—

6.5

1.3

mΩ

= 12V, I =45A

➀

= 0V, I = 45A

GS S

1. Part numbers IRHSNA57064, IRHSNA53064 and IRHSNA54064

2. Part number IRHSNA58064

International Rectifier Radiation Hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

➀

Table 2. Single Event Effect Safe Operating Area

V_DS(V)

(µm) @V_GS=0V @V_GS=-5V @V_GS=-10V @V_GS=-15V @V_GS=-20V

Ion

LET

MeV/(mg/cm²))

39.2

Energy

(MeV)

300

2068

Range

37.4

29.2

106

63.3

86.6

-5

-10

-15

-20

VGS

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

IRHSNA57064

Pre-Irradiation

1000

100

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

TOP

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

TOP

BOTTOM 5.0V

100

5.0V

20µs PULSE WIDTH

T = 25 C

20µs PULSE WIDTH

T = 150 C

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

100

2.0

1.5

1.0

0.5

0.0

75A

T = 150 C

T = 25 C

= 25V

20µs PULSE WIDTH

=12V

5.0

-60 -40 -20

20 40 60 80 100 120 140 160

6.0

7.0

8.0 9.0

10.0

T , Junction Temperature ( C)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com

IRHSNA57064

Pre-Irradiation

= 45A

= 48V

= 30V

= 12V

FOR TEST CIRCUIT

SEE FIGURE 13

150 200

100

250

, Total Gate Charge (nC)

Fig 5. Typical Gate Charge Vs.

Gate-to-Source Voltage

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

.3µF

12V

12 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 5b. Gate Charge Test Circuit

Fig 5a. Basic Gate Charge Waveform

www.irf.com

IRHSNA57064

Pre-Irradiation

R_D

200

150

100

V_DS

LIMITED BY PACKAGE

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 7a. Switching Time Test Circuit

90%

100

125

150

, Case Temperature ( C)

10%

Fig 6. Maximum Drain Current Vs.

d(on)

d(off)

Case Temperature

Fig 7b. Switching Time Waveforms

D = 0.50

0.20

0.1

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

0.01

Notes:

1. Duty factor D =

t / t

1 2

2. Peak T =P

x Z

+ T

thJC

0.001

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 8. Maximum Effective Transient Thermal Impedance, Junction-to-Case, MOSFET

www.irf.com

Pre-Irradiation

IRHSNA57064

800

600

400

200

TOP

33.5A

47.4A

BOTTOM 75A

100

125

150

Starting T , Junction Temperature ( C)

Fig 9. Maximum Avalanche Energy

Vs. Drain Current

(BR)DSS

15V

DRIVER

D S

D.U .T

D D

20V

0.01

Ω

Fig 9b. Unclamped Inductive Waveforms

Fig 9a. Unclamped Inductive Test Circuit

www.irf.com

IRHSNA57064

Pre-Irradiation

MOSFET Body Diode & Schottky Diode Characteristics

100

Tj = 125°C

Tj = 25°C

Tj = -55°C

0.0

0.2

0.4

0.6

0.8

(V)

1.0

Forward Voltage Drop - V

Fig. 10 - Typical Forward Voltage Drop Characterstics

D = 0.50

0.20

0.1

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

0.01

Notes:

1. Duty factor D =

/ t

1 2

2. Peak T = P

+ T

thJC

0.001

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case, Schottky

www.irf.com

Pre-Irradiation

Footnotes:

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature

IRHSNA57064

➀ Total Dose Irradiation with V

Bias.

12 volt V

applied and V

= 0 during

irradiation per MIL-STD-750, method 1019, condition A.

➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➀ 50% Duty Cycle, Rectangular

➀ Total Dose Irradiation with V Bias.

= 0 during

48 volt V

applied and V

➀ V

= 25V, starting T = 25°C, L= 0.13 mH

Peak I = 75A, V

irradiation per MlL-STD-750, method 1019, condition A.

= 12V

➀

Specified Radiation Characteristics are for

Radiation Hardened MOSFET die only.

Case Outline and Dimensions — SMD-2

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 07/02

www.irf.com

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