IRHY57034CMSCSPBF [INFINEON]
Power Field-Effect Transistor, 16A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA;
| 型号： | IRHY57034CMSCSPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 16A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA 局域网 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93825
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
IRHY57034CM
60V,N-CHANNEL
TECHNOLOGY
R
5
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHY57034CM 100K Rads (Si) 0.030Ω 16A*
IRHY53034CM 300K Rads (Si) 0.030Ω 16A*
IRHY54034CM 600K Rads (Si) 0.030Ω 16A*
IRHY58034CM 1000K Rads (Si) 0.038Ω 16A*
TO-257AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
16*
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
16*
64
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
Linear Derating Factor
0.6
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
±20
120
16
GS
E
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
10
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
* Current is limited by internal wire diameter
For footnotes refer to the last page
www.irf.com
1
1/26/2000
IRHY57034CM
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
60
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.057
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.03
Ω
V
= 12V, I = 16A
GS D
DS(on)
➃
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
16
—
—
—
—
—
4.0
—
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
DS
> 15V, I
= 16A ➃
DS
I
10
25
V
=48V ,V =0V
DSS
DS GS
µA
—
V
= 48V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
45
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 16A
g
gs
gd
d(on)
r
GS
D
= 30V
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
10
15
V
DS
t
t
t
t
25
V
DD
= 30V, I = 16A,
D
100
35
R
= 7.5Ω
G
ns
d(off)
f
30
L
+ L
Total Inductance
—
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
—
—
—
1152
535
42
—
—
—
V
= 0V, V
= 25V
iss
oss
rss
GS
DS
f = 1.0MHz
pF
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
16*
64
S
A
SM
V
t
1.2
99
V
ns
T = 25°C, I = 16A, V
= 0V ➃
j
SD
rr
S
GS
Reverse Recovery Time
T = 25°C, I = 16A, di/dt ≥ 100A/µs
j
F
Q
Reverse Recovery Charge
322
nC
V
DD
≤ 25V ➃
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
* Current is limited by internal wire diameter
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
—
1.67
80
thJC
thJA
°C/W
Junction-to-Ambient
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHY57034CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➄➅
1
Parameter
Up to 600K Rads(Si) 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
60
2.0
—
—
—
—
—
60
—
V
= 0V, I = 1.0mA
DSS
GS D
V
V
Gate Threshold Voltage
➃
4.0
1.5
—
—
—
—
4.0
V
= V , I = 1.0mA
GS(th)
GS
DS
D
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
-100
10
100
-100
10
V
GS
= 20V
GSS
nA
I
V
GS
= -20 V
GSS
I
µA
Ω
V
V
=48V, V =0V
DS GS
DSS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-257AA)
Diode Forward Voltage
➃
0.034
0.043
= 12V, I = 16A
D
GS
R
DS(on)
➃
—
—
0.03
1.2
—
—
0.038
1.2
Ω
V
= 12V, I = 16A
D
GS
V
SD
➃
V
V
= 0V, I = 16A
GS S
1. Part numbers IRHY57034CM, IRHY53034CM and IRHY54034CM
2. Part number IRHY58034CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2.Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
MeV/(mg/cm2))
39.2
Energy
(MeV)
300
300
2068
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Kr
Xe
Au
37.4
29.2
106
60
46
35
60
46
35
60
35
27
52
25
20
34
15
14
63.3
86.6
70
60
50
40
30
20
10
0
Kr
Xe
Au
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHY57034CM
Pre-Irradiation
1000
1000
100
10
VGS
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
100
10
1
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 25 C
J
T = 150 C
J
0.1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.5
2.0
1.5
1.0
0.5
0.0
=16A
I
D
°
T = 25 C
J
°
T = 150 C
J
= 25V
V
DS
20µs PULSE WIDTH
V
= 12V
GS
1
5
7
9
11 13
15
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
4
www.irf.com
Pre-Irradiation
IRHY57034CM
2500
20
15
10
5
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 16A
GS
C
= C + C
iss
gs
gd
gd ,
V
V
V
= 48V
= 30V
= 12V
DS
DS
DS
C
= C
rss
C
= C + C
gd
2000
1500
1000
500
0
oss
ds
C
iss
C
oss
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
10
20
30
40
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10us
°
T = 25 C
J
100us
1ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
10ms
100
J
V
= 0 V
GS
0.1
0.4
1
0.6
0.8
1.0
1.2
1.4
1
10
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
www.irf.com
5
IRHY57034CM
Pre-Irradiation
RD
40
30
20
10
0
VDS
LIMITED BY PACKAGE
VGS
12V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
Pre-Irradiation
IRHY57034CM
250
200
150
100
50
I
D
TOP
7.2A
10A
BOTTOM 16A
15V
DRIVER
L
V
D S
D.U.T
.
R
G
+
V
D D
-
I
A
AS
12V
2
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
www.irf.com
7
IRHY57034CM
Footnotes:
Pre-Irradiation
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➁ V
= 50V, starting T = 25°C, L= 0.94 mH
GS
DS
DD
J
irradiation per MIL-STD-750, method 1019, condition A.
Peak I = 16A, V
= 12V
GS
L
➅ Total Dose Irradiation with V Bias.
➂ I
≤ 16A, di/dt ≤ 234A/µs,
DS
= 0 during
SD
DD
48 volt V
DS
applied and V
GS
V
≤ 60V, T ≤ 150°C
J
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions —TO-257AA
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice.
1/2000
8
www.irf.com
相关型号：
IRHY57133CMSEPBF
Power Field-Effect Transistor, 18A I(D), 130V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, LEAD FREE, HERMETICALLY SEALED PACKAGE-3
INFINEON
IRHY57234CMSEPBF
Power Field-Effect Transistor, 9.6A I(D), 250V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED PACKAGE-3
INFINEON
©2020 ICPDF网 联系我们和版权申明