IRHYB67230CM [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA); 抗辐射功率MOSFET直通孔（低电阻TO- 257AA ）
| 型号： | IRHYB67230CM |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) |
| 文件： | 总8页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95818C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
IRHYB67230CM
200V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number
Radiation Level RDS(on)
ID
IRHYB67230CM 100K Rads (Si) 0.13Ω 16A
IRHYB63230CM 300K Rads (Si) 0.13Ω 16A
Low-Ohmic
TO-257AA
Tabless
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
very low R
and faster switching times reduces
DS(on)
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Electrically Isolated
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
16
10
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
D
GS
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
64
DM
@ T = 25°C
P
D
75
W
W/°C
V
C
0.6
V
±20
83
GS
E
Single Pulse Avalanche Energy Á
Avalanche Current À
mJ
A
AS
I
16
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
9.0
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 (0.063 in. /1.6 mm from case for 10s)
3.7 (Typical)
For footnotes refer to the last page
www.irf.com
1
03/17/06
IRHYB67230CM
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
200
—
—
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.19
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
0.13
Ω
V
= 12V, I = 10A Ã
D
DS(on)
GS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
11
—
—
—
—
—
4.0
—
10
25
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
V
= 15V, I
= 10A Ã
DS
DS
DS
I
= 160V ,V =0V
GS
DSS
µA
—
V
= 160V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
42
V
= 20V
GSS
GSS
GS
nA
nC
V
= -20V
GS
Q
Q
Q
V
=12V, I = 16A
g
gs
gd
d(on)
r
GS D
10
V
DS
= 100V
20
t
t
t
t
15
V
DD
V
= 100V, I = 16A
D
40
=12V, R = 7.5Ω
GS G
ns
Turn-Off Delay Time
Fall Time
Total Inductance
35
d(off)
15
—
f
L
+ L
Measured from Drain lead (6mm /
0.25in. from package) to Source lead
(6mm /0.25in. from package)
S
D
nH
C
C
C
Input Capacitance
—
—
—
—
1660
206
2.6
—
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
Output Capacitance
pF
oss
rss
g
Reverse Transfer Capacitance
Internal Gate Resistance
R
1.75
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
16
64
S
A
SM
V
t
1.2
300
3.2
V
T = 25°C, I = 16A, V
= 0V Ã
j
SD
S
GS
Reverse Recovery Time
ns
T = 25°C, I = 16A, di/dt ≤ 100A/µs
j
rr
F
Q
Reverse Recovery Charge
µC
V
DD
≤ 25V Ã
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thJA
Junction-to-Case
—
—
—
—
1.67
80
°C/W
Junction-to-Ambient
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHYB67230CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads (Si) Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
200
2.0
—
—
4.0
V
GS
= 0V, I = 1.0mA
DSS
D
V
V
V
GS
= V , I = 1.0mA
GS(th)
DS
D
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
100
-100
10
V
GS
= 20V
GSS
nA
µA
I
—
V
= -20V
GS
GSS
I
—
V =160V, V =0V
DS GS
DSS
R
DS(on)
On-State Resistance (TO-3)
—
0.134
Ω
V
= 12V, I = 10A
GS
GS
D
R
DS(on)
Static Drain-to-Source On-State
Resistance (Low Ohmic TO-257)
—
—
0.13
1.2
Ω
V
= 12V, I = 10A
D
V
SD
Diode Forward Voltage
V
V = 0V, I = 16A
GS
D
Part numbers IRHYB67230CM, IRHYB63230CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
2441
825
(µm)
205
66
@VGS= 0V
200
@VGS= -5V @VGS= -10V @VGS= -15V
Xe
Xe
Au
43
59
90
200
200
170
200
200
--
190
190
--
200
1480
80
170
240
200
160
120
80
Xe - LET=43
Xe - LET=59
Au - LET=90
40
0
0
-5
-10
VGS
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHYB67230CM
Pre-Irradiation
100
100
10
1
VGS
VGS
15V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
12V
10V
9.0V
8.0V
7.0V
6.0V
10
1
5.0V
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
100
10
1
16A
=
I
D
T
= 150°C
2.0
1.5
1.0
0.5
0.0
J
T
= 25°C
J
V
= 50V
DS
0µ
6
s PULSE WIDTH
V
=12V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
2
4
6
8
10
12
14
16
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHYB67230CM
3000
20
16
12
8
V
= 0V,
f =1MHz
gd , ds
GS
I = 16A
D
C
= C + C
C
SHORTED
V
V
V
= 160V
iss
gs
DS
DS
DS
C
= C
gd
= 100V
= 40V
rss
C
= C + C
ds
2400
1800
1200
600
0
oss
gd
C
C
iss
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
10
20
30
40
50
60
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
= 25°C
T
J
100µs
1.0
0.1
1
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
V
= 0V
GS
0.1
1
10
100
1000
0.2
0.4
SD
0.6
0.8
1.0
1.2
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHYB67230CM
Pre-Irradiation
RD
16
12
8
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
V
DS
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.1
P
DM
t
1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
t
2
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHYB67230CM
160
120
80
40
0
I
D
TOP
7.0A
10A
BOTTOM 16A
15V
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
2
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
V
(BR)DSS
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHYB67230CM
Footnotes:
Pre-Irradiation
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
GS
= 0 during
Á
V
= 25V, starting T = 25°C, L= 0.65mH
J
DD
Peak I = 16A, V
12 volt V
applied and V
GS
DS
= 12V
L
GS
irradiation per MIL-STD-750, method 1019, condition A.
 I
≤ 16A, di/dt ≤ 750A/µs,
≤ 200V, T ≤ 150°C
J
SD
DD
Å Total Dose Irradiation with V Bias.
DS
applied and V = 0 during
GS
V
160 volt V
DS
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — Low-Ohmic TO-257AA ( Tabless)
LEAD ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2006
8
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