IRIS-F6428S [INFINEON]
INTEGRATED SWITCHER; 集成开关调节器
| 型号： | IRIS-F6428S |
| 厂家： | 
Infineon |
| 描述： | INTEGRATED SWITCHER |
| 文件： | 总7页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. PD 96940A
IRIS-F6428S
INTEGRATED SWITCHER
Features
• Oscillator is provided on the monolithic control with adopting On-Chip-
Trimming technology.
Package Outline
• Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
• Low start-up circuit current (100uA max)
• Built-in Active Low-Pass Filter for stabilizing the operation in case of light
load
• Avalanche energy guaranteed MOSFET with high VDSS
• The built-in power MOSFET simplifies the surge absorption circuit
since the MOSFET guarantees the avalanche energy.
• No VDSS de-rating is required.
• Built-in constant voltage drive circuit
• Built-in step drive circuit
TO-247 Fullpack (5 Lead)
Key Specifications
• Built-in low frequency PRC mode (≒20kHz)
• Various kinds of protection functions
MOSFET
VDSS(V)
RDS(ON)
MAX
Pout(W)
Note 1
Type
AC input(V)
100±15%
225
290
• Pulse-by-pulse Overcurrent Protection (OCP)
• Overvoltage Protection with latch mode (OVP)
• Thermal Shutdown with latch mode (TSD)
120 15%
0.35Ω
±
IRIS-F6428S
450
Note 1: The Pout (W) represents the thermal rating at Quasi-Resonant
Operation, and the peak power output is obtained by approximately
120 to 140% of the above listed. When the output voltage is low and
ON-duty is narrow, the Pout (W) shall become lower than that of above.
Descriptions
IRIS-F6428S is a hybrid IC consists from power MOSFET and a controller IC, designed for Quasi-Resonant (including
low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes
high efficiency, low noise, downsizing and standardizing of a power supply system reducing external components count
and simplifying the circuit designs. (Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed
OFF-time).
Typical Connection Diagram
IRIS-F6400
GND
Vin
D
S
OCP/FB
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IRIS-F6428S
Absolute Maximum Ratings (Ta=25ºC)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
Drain Current *1
Terminals Max. Ratings Units
Note
Dpeak
3-2
36
A
Single Pulse
2-5
V =0.78V
DMAX
I
℃
Maximum switching current *5
3-2
22
A
Ta=-20~+125
Single Pulse
Vdd=30V, L=50mA
L peak
AS
E
Single pulse avalanche energy *2
Input voltage for control part
O.C.P/F.B Pin voltage
3-2
4-5
1-5
647
35
6
mJ
V
I
=9.2A
Vin
Vth
V
58
2.8
W
W
With infintite heatsink
Without heatsink
D1
P
Power dissipation for MOSFET *3
Power dissipation for control part
(Control IC) *4
Internal frame temperature
in operation
Operating ambient temperature
Storage temperature
Channel temperature
3-2
4-5
D2
×
Specified by Vin Iin
Refer to recommended
operating temperature
P
0.49
W
℃
℃
℃
℃
F
T
-
-
-
-
-20 ~ +125
-20 ~ +125
-40 ~ +125
150
Top
Tstg
Tch
*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
Fig.1
V2-5
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and
Pin 5 due to patterning, the maximum switching current decreases as shown by V2-5 in Fig.1
Accordingly please use this device within the decrease value, referring to the derating curve of the
maximum switching current.
Recommended operating conditions
Tth(2)≧1.0μsec
Time for input of quasi resonant signals
ＶO.C.P/F.B
For the quasi resonant signal inputted to O.C.P/F.B Pin at the time
of quasi resonant operation, the signal shall be wider than Tth(2).
Vth(2)
0V
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IRIS-F6428S
Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25℃, Vin=18V,unless otherwise specified)
Ratings
Test
Symbol
Definition
MIN
TYP
MAX
17.6
11
Units
V
Conditions
→
Vin=0 17.6V
Vin=17.6 9V
→
in(ON)
V
Operation start voltage
14.4
16
10
-
-
-
in(OFF)
V
Operation stop voltage
9
-
-
V
in(ON)
I
Circuit current in operation
Circuit current in non-operation
Maximum OFF time
30
mA
µA
µsec
-
Vin=14V
in(OFF)
I
100
55
OFF(MAX)
T
45
-
Minimum time for input of quasi
Tth(2) resonant signals
*6
*7
-
-
-
-
1
2
µsec
µsec
V
-
-
-
OFF(MIN)
T
Minimum OFF time
Vth(1) O.C.P/F.B Pin threshold voltage 1
Vth(2) O.C.P/F.B Pin threshold voltage 2
OCP/FB
0.68
1.3
1.2
20.5
-
0.73
1.45
1.35
22.5
-
0.78
1.6
1.5
24.5
400
8.4
-
V
I
O.C.P/F.B Pin extraction current
O.V.P operation voltage
mA
V
-
Vin=0
V
→8.5V
→6.6V
→24.5
in(OVP)
in(H)
I
V
Vin=24.5
Vin=24.5
Latch circuit sustaining current *8
Latch circuit release voltage *8
µA
in(La.OFF)
V
6.6
140
-
-
V
℃
(TSD)
Tj
Thermal shutdown operating temperature
*6 Refer to Recommended operating conditions (See page 2)
*7 The minimum OFF time means TOFF width at the time when the minimum quasi resonant signal is inputted.
*8 The latch circuit means a circuit operated O.V.P and T.S.D.
Electrical Characteristics (for MOSFET)
(Ta=25℃) unless otherwise specified
Ratings
Symbol
Definition
Drain-to-Source breakdown voltage
Drain leakage current
MIN
450
-
TYP
MAX
-
Units
V
Test Conditions
ID=300µA
- 2
V5 =0V(short)
DSS
V
-
-
DS
V
=450V
V5-2=0V(s hort)
V5-2=10V
DSS
I
300
µA
D
Ω
I =4.6A
DS(ON)
R
On-resistance
Switching time
-
-
-
-
0.35
250
tf
nsec
-
Between channel and
internal frame
θ
ch-F
℃
Thermal resistance
-
-
0.85
/W
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IRIS-F6428S
IRIS-F6428S
A.S.O. temperature derating coefficient curve
IRIS-F6428S
Ta=25ºC
MOSFET A.S.O. Curve
ꢀ
Single Pulse
100
10
100
Drain current
limit by ON
resistance
0.1ms
1ms
80
60
40
20
0
1
ASO temperature derating
shall be made by obtaining
ASO Coefficient from the left
curve in your use.
0.1
0.01
0
20
40
60
80
100 120
1
10
100
1000
F
Internal frame temperature T [
]
℃
Drain-to-SourceVoltageV [V ]
DS
IRIS-F6428S
IRIS-F6428S
Avalanche energy derating curve
Maximum Switching current derating curve
Ta= 20 +125
℃
100
80
60
40
20
0
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
25.0
‐ ～
20.0
15.0
10.0
5.0
0.0
0.70
0.80
0.90
1.00
1.10
1.20
25
50
75
100
125
]
150
V2-5 [V]
Channel temperature Tch [
℃
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IRIS-F6428S
IRIS-F6428S
MIC TF-PD2 Curve
IRIS-F6428S
MOSFET Ta-PD1 Curve
0.6
0.5
0.4
0.3
0.2
0.1
0
70
60
50
40
30
20
10
0
PD1=58[W]
PD2=0.49[W]
With infinite
heatsink
Without
heatsink
PD1=2.8[W]
0
20
40
60
80 100 120 140 160
0
20
40
60
80 100 120 140 160
Internal frame temperature TF[℃]
Ambient temperature Ta[℃]
IRIS-F6428S
Transient thermal resistance curve
10
1
0.1
0.01
0.001
1µ
10µ
100µ
1m
10m
100m
time t [sec]
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IRIS-F6428S
Block Diagram
4 Vin
3
D
LATCH
START
REG.
O.V.P.
DRIVE
2
S
T.S.D
Vth(1)
1
OCP/FB
-
+
O.S.C
Vth(2)
-
+
5
GND
Lead Assignments
Pin No.
Symbol
Description
Function
Overcurrent / Feedback
Pin
Input of overcurrent detection
signal / constant voltage control signal
MOSFET source
1
2
3
4
5
OCP/FB
S
Source Pin
D
Drain Pin
MOSFET drain
Input of power supply for control circuit
Ground
IRIS
Vin
Power supply Pin
Ground Pin
GND
Other Functions
O.V.P. – Overvoltage Protection Circuit
T.S.D. – Thermal Shutdown Circuit
STEP DRV – 2 step drive circuit
OCP/FB
S
D
Vin
GND
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IRIS-F6428S
Case Outline
55..55±0.2
55..55
33..4455±0.2
33..4455
φ3.2 ±0.2
IRIS
33..3355±0.1
33..3355
a
IR
b
RR--eenndd
RR--eenndd
++00..22
++00..22
11..3355
11..3355
--00..11
--00..11
RR--eenndd
RR--eenndd
22--((RR11..33))
22--((RR11..33))
++00..22
++00..22
11..7755
11..7755
--00..11
--00..11
++00..22
++00..22
00..6655
00..6655
--00..11
--00..11
++00..22
++00..22
00..8855
00..8855
--00..11
--00..11
a：Type Number F6428S
b：Lot Number
4xP2.54±0.1=(10.16)
44..55±0.7
44..55
1st letter：The last digit of year
2nd letter：Month
1 to 9 for Jan. to Sept.,
O for Oct. N for Nov. D for
Dec.
1155..66±0.2
1155..66
3rd & 4th letter：Day
Arabic Numerals
00..55
00..55
00..55
00..55
5th letter : Registration Symbol
11 22 33 44 55
11 22 33 44 55
Weight : Approx. 7.5g
Dimensions in mm
DWG.No.：4B-E01515A
Material of Pin : Cu
Treatment of Pin : Ni plating + solder dip
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC FAX: (310) 252-7903
Visit us at www.irf.com for sales contact information.
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