IRIS-G6353 [INFINEON]
Hybrid IC consists from power MOSFET and a controller IC; 混合集成电路包括从功率MOSFET和控制器IC
| 型号： | IRIS-G6353 |
| 厂家： | 
Infineon |
| 描述： | Hybrid IC consists from power MOSFET and a controller IC |
| 文件： | 总7页 (文件大小：268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. PD 96946A
IRIS-G6353
Features
INTEGRATED SWITCHER
• Oscillator is provided on the monolithic control with adopting On-Chip-
Package Outline
Trimming technology.
• Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
• Low start-up circuit current (50uA max)
• Built-in Active Low-Pass Filter for stabilizing the operation in case of light
load
• Avalanche energy guaranteed MOSFET with high VDSS
• The built-in power MOSFET simplifies the surge absorption circuit
since the MOSFET guarantees the avalanche energy.
• No VDSS de-rating is required.
• Built-in constant voltage drive circuit
•Various kinds of protection functions
TO-220 Fullpack (5 Lead)
Key Specifications
• Pulse-by-pulse Overcurrent Protection (OCP)
• Overvoltage Protection with latch mode (OVP)
• Thermal Shutdown with latch mode (TSD)
MOSFET
VDSS(V)
RDS(ON)
MAX
Pout(W)
Note 1
Type
AC input(V)
230±15%
85 to 264
120
58
1.90Ω
IRIS-G6353
650
Note 1: The Pout (W) represents the thermal rating at PRC Operation,
and the peak power output is obtained by approximately 120 to 140% of
the above listed. When the output voltage is low and ON-duty is narrow,
the Pout (W) shall become lower than that of above.
Descriptions
IRIS-G6353 is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter type
SMPS (Switching Mode Power Supply) applications. This IC realizes downsizing and standardizing of a power supply
system reducing external components count and simplifying the circuit designs.
(Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time).
Typical Connection Diagram
IRIS-G6300
OCP/FB
Vin
GND
S
D
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IRIS-G6353
Absolute Maximum Ratings (Ta=25ºC)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
Drain Current *1
Terminals Max. Ratings Units
Note
Dpeak
I
1-2
10
A
Single Pulse
2-3
V =0.82V
DMAX
I
℃
Maximum switching current *5
1-2
10
A
Ta=-20~+125
Single Pulse
DD=99V, L=20mH
V
I
AS
E
L peak
Single pulse avalanche energy *2
Input voltage for control part
O.C.P/F.B Pin voltage
1-2
4-3
5-3
125
35
6
mJ
V
=3.2A
Vin
Vth
V
26
1.5
W
W
With infintite heatsink
Without heatsink
Specified by
×
Vin Iin
Refer to recommended
operating temperature
D1
P
Power dissipation for MOSFET *3
Power dissipation for control part
(Control IC) *4
Internal frame temperature
in operation
Operating ambient temperature
Storage temperature
Channel temperature
1-2
4-3
D2
P
0.14
W
℃
℃
℃
℃
F
T
-
-
-
-
-20 ~ +125
-20 ~ +125
-40 ~ +125
150
Top
Tstg
Tch
*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
Fig.1
V2-3
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and
Pin 3 due to patterning, the maximum switching current decreases as shown by V2-3 in Fig.1
Accordingly please use this device within the decrease value, referring to the derating
curve of the maximum switching current.
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IRIS-G6353
Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25℃, Vin=20V,unless otherwise specified)
Ratings
Symbol
Definition
MIN
15.8
9.1
-
TYP
17.6
10.1
-
MAX Units
Test Conditions
→
Vin=0 19.4V
in(ON)
V
Operation start voltage
19.4
11.1
5
V
V
Vin=19.4 9.1V
→
in(OFF)
V
Operation stop voltage *6
Circuit current in operation
Circuit current in non-operation
Maximum OFF time
O.C.P/F.B Pin threshold voltage
O.C.P/F.B Pin extraction current
O.V.P operation voltage
Latch circuit sustaining current *7
Latch circuit release voltage *6,7
Thermal shutdown operating temperature
in(ON)
I
mA
µA
µsec
V
-
Vin=15V
in(OFF)
I
-
-
50
OFF(MAX)
T
12
15
0.76
0.8
25.5
-
18
-
-
-
Vth
0.7
0.7
23.2
-
0.82
0.9
27.8
70
OCP/FB
I
mA
V
Vin=0
V
→27.8
in(OVP)
I
V
in(H)
Vin=27.8
µA
V
→(Vin(OFF)-0.3)V
Vin=27.8
→7.9V
in(La.OFF)
V
7.9
135
-
-
10.5
-
(TSD)
℃
Tj
-
*6 The relation of VIN(OFF) >VIN(La.OFF) is applied for each product
*7 The latch circuit means a circuit operated O.V.P and T.S.D.
Electrical Characteristics (for MOSFET)
(Ta=25℃) unless otherwise specified
Ratings
Symbol
Definition
Drain-to-Source breakdown voltage
Drain leakage current
MIN
650
-
TYP
MAX
Units
Test Conditions
ID=300µA
- 2
V3 =0V(short)
DSS
V
-
-
-
V
DS
V
=650V
V3-2=0V(s hort)
V3-2=10V
DSS
I
300
µA
D
Ω
I =1.2A
DS(ON)
R
On-resistance
Switching time
-
-
-
-
1.9
tf
250
nsec
-
Between channel and
internal frame
θ
ch-F
℃
Thermal resistance
-
-
2
/W
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IRIS-G6353
IRIS-G6353
IRIS-G6353
A.S.O. temperature derating coefficient curve
Ta=25℃
MOSFET A.S.O. Curve
ꢀ
Single Pulse
100
10
100
80
60
40
20
0
Drain current
limit by ON
resistance
0.1ms
1ms
1
0.1
0.01
ASO temperature derating
shall be made by obtaining
ASO Coefficient from the left
curve in your use.
0
20
40
60
80
100
120
1
10
100
1000
Internal frame temperature TF [℃]
Drain-to-Source Voltage VDS [V]
IRIS-G6353
IRIS-G6353
Avalanche energy derating curve
Maximum Switching current derating curve
Ta= 20 +125
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
‐ ～
℃
100
80
60
40
20
0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
25
50
75
100
125
150
0.8
0.9
1.0
2-3 [V]
1.1
1.2
V
Channel temperature Tch [℃]
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IRIS-G6353
IRIS-G6353
MIC TF-PD2 Curve
IRIS-G6353
MOSFET Ta-PD1 Curve
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
30
25
20
15
10
5
PD2=0.14[W]
PD1=26[W]
With infinite
heatsink
Without
heatsink
PD1=1.5[W]
0
0
20
40
60
80 100 120 140 160
0
20 40 60 80 100 120 140 160
Internal frame temperature TF[℃]
Ambient temperature Ta[℃]
IRIS-G6353
Transient thermal resistance curve
10
1
0.1
0.01
0.001 1µ
10µ
100µ
1m
10m
100m
t [sec]
tim e
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IRIS-G6353
Block Diagram
Vin
4
OVP
TSD
＋
－
UVLO
＋
－
REG
Latch
Delay
Internal Bias
＋
－
1
REG
D
S
PWM Latch
S Q
Drive
OSC
R
2
5
OCP Comp.
＋
－
OCP/FB
Icont
3
GND
Lead Assignments
Pin No.
Symbol
D
Description
Drain Pin
Function
1
2
3
4
MOSFET drain
MOSFET source
Ground
S
Source Pin
Ground Pin
GND
Vin
Power supply Pin
Input of power supply for control circuit
Input of overcurrent detection
signal / constant voltage control signal
IRIS
5
OCP/FB Overcurrent / Feedback Pin
Other Functions
O.V.P. – Overvoltage Protection Circuit
T.S.D. – Thermal Shutdown Circuit
D
S
GND
Vin
OCP/FB
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IRIS-G6353
Case Outline
44..22±00..22
44..22 00..22
φ
33..22±00..22
33..22 00..22
22..88±00..22
22..88 00..22
IRIS
a
b
22..66±00..11
22..66 00..11
22--((RR11))
22--((RR11))
00..9944±00..1155
00..9944 00..1155
RR--eenndd
RR--eenndd
++00..22
++00..22
--00..11
--00..11
00..8855
00..8855
++00..22
++00..22
--00..11
--00..11
00..4455
00..4455
55..0088±00..66
55..0088 00..66
44xxpp11..77±00..11==((66..88))
44xxpp11..77 00..11==((66..88))
a：Type Number G6353
b：Lot Number
1100±00..22
1100 00..22
1st letter：The last digit of year
2nd letter：Month
00..77
00..77
00..77
00..77
1 to 9 for Jan. to Sept.,
O for Oct. N for Nov. D for Dec.
3rd & 4th letter：Day
Arabic Numerals
5th letter : Registration Symbol
11 22 33 44 55
11 22 33 44 55
Weight : Approx. 2.3g
Material of Pin : Cu
Treatment of Pin : Ni plating + solder dip
Dimensions in mm
DWG.No.：TG3A-1128
Data and specifications subject to change without notice.
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TAC FAX: (310) 252-7903
Visit us at www.irf.com for sales contact information.
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