IRKF102 [INFINEON]
FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR; 快速晶闸管/二极管和晶闸管/晶闸管
| 型号： | IRKF102 |
| 厂家： | 
Infineon |
| 描述： | FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
| 文件： | 总8页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27097 rev. A 09/97
IRK.F102.. SERIES
INT-A-pakä Power Modules
FAST THYRISTOR/ DIODE and
THYRISTOR/THYRISTOR
Features
Fast turn-off thyristor
105 A
Fast recovery diode
High surge capability
Electrically isolated baseplate
3000 VRMS isolating voltage
Industrial standard package
UL E78996 approved
Description
These series of INT-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and
others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters
I T(AV)
IRK.F102..
105
Units
A
°C
A
@ TC
90
IT(RMS)
ITSM
233
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
2850
A
3000
A
2
2
I t
40.8
KA s
2
37.2
KA s
2
2
I √t
408
KA √s
t
20and 25
2
µs
µs
V
q
t
rr
VDRM/VRRM
upto1200
-40to125
o
TJ
range
C
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1
IRK.F102.. Series
Bulletin I27097 rev. A 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM/VDRM, maximum repetitive
VRSM , maximum non-
IRRM/IDRM max.
@ TJ = 125°C
mA
Type number
peak reverse voltage
repetitive peak rev. voltage
V
V
08
12
800
1200
800
1200
IRK.F102.. Series
30
Current Carrying Capacity
ITM
ITM
ITM
Frequency f
Units
180oel
180oel
100µs
50Hz
210
340
415
280
230
175
50
320
395
320
260
190
50
500
625
490
380
275
50
1590
975
390
260
-
2210
1390
570
380
-
A
A
400Hz
265
180
145
110
50
2500Hz
A
5000Hz
A
10000Hz
A
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Case temperature
Equivalent values for RC circuit
50
50
V
80%VDRM
80%VDRM
80%VDRM
V
50
90
50
60
-
-
-
-
A/µs
°C
90
60
90
60
47Ω / 0.22µF
47Ω / 0.22µF
47 Ω/ 0.22µF
On-state Conduction
Parameter
IRK.F102..
Units Conditions
IT(AV)
Maximum average on-state current
@ Case temperature
IT(RMS) Maximum RMS current
105
90
A
°C
A
180° conduction, half sine wave
233
TC = 90°C, as AC switch
ITSM
Maximum peak, one-cycle,
non-repetitive surge current
2850
3000
2400
2500
40.8
37.2
28.8
26.3
408
A
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
KA2s t = 10ms No voltage Initial TJ = 125°C
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
I2√t
Maximum I2√t for fusing
KA2√s t = 0 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold voltage
VT(TO)2 High level value of threshold voltage
1.12
1.28
V
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
r
r
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage drop
2.43
2.00
1.97
mW (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
t1
t2
VTM
IH
V
Ipk = 350A, TJ = TJ max., tp = 10ms sine pulse
Maximum holding current
Typical latching current
600
mA TJ = 25°C, IT > 30 A
IL
1000
mA TJ = 25°C, VA = 12V, Ra = 6Ω, Ig = 1A
2
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IRK.F102.. Series
Bulletin I27097 rev. A 09/97
Switching
Parameter
IRK.F102..
800
Units Conditions
di/dt
Maximum non-repetitive rate of rise
A/µs Gate drive 20V, 20Ω, tr ≤ 1ms, VD= 80% VDRM
TJ = 25°C
t
Maximum recovery time
Maximum turn-off time
2
µs
µs
ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C
ITM = 350A, TJ = 125°C, di/dt = -25A/µs,
rr
t
K
J
q
20
25
VR = 50V, dv/dt = 400V/µs linear to 80% VDRM
Blocking
Parameter
IRK.F102..
1000
Units Conditions
dv/dt
Maximum critical rate of rise of off-state
voltage
V/µs
TJ = 125°C., exponential to = 67% VDRM
VINS
IRRM
IDRM
RMS isolation voltage
3000
30
V
50 Hz, circuit to base, TJ = 25°C, t = 1 s
Maximum peak reverse and off-state
leakage current
mA TJ = 125°C, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum peak average gate power
IGM Maximum peak positive gate current
- VGM Maximum peak negative gate voltage
IRK.F102..
Units Conditions
PGM
40
2
W
W
A
f = 50 Hz, d% = 50
TJ = 125°C, f = 50Hz, d% = 50
5
TJ = 125°C, t < 5ms
p
5
V
IGT
Max. DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
200
3
mA TJ = 25°C, Vak 12V, Ra = 6
VGT
IGD
VGD
V
20
0.25
mA TJ = 125°C, rated VDRM applied
V
DC gate voltage not to trigger
Thermal and Mechanical Specifications
Parameter
IRK.F102..
- 40 to 125
- 40 to 150
0.25
Units Conditions
°C
TJ
T
Max. junction operating temperature range
Max. storage temperature range
stg
RthJC Max. thermal resistance, junction to
K/W Per junction, DC operation
case
RthC-hs Max. thermal resistance, case to
heatsink
0.035
K/W Mounting surface flat and greased
Per module
A mounting compound is recommended. The torque
Nm
T
Mounting torque ± 10% IAP to heatsink
busbar to IAP
4 - 6 (35 - 53)
4 - 6 (35 - 53)
500 (17.8)
should be rechecked after a period of 3 hoursto allow
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
(lb*in)
restrained during tightening. Threads must be
lubricatedwithacompound
wt
Approximate weight
g (oz)
3
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IRK.F102.. Series
Bulletin I27097 rev. A 09/97
∆RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180°
120°
90°
0.016
0.019
0.024
0.035
0.060
0.011
0.020
0.026
0.037
0.060
K/W
TJ = 125°C
60°
30°
Ordering Information Table
Device Code
IRK
T
F
10
2
-
08
H
L
N
3
4
5
8
1
2
6
7
8
1
2
3
4
5
-
-
-
-
-
Moduletype
Circuitconfiguration
Fast SCR
Current rating: IT(AV) x 10 rounded
1 = option with spacers and longer terminal screws
2 = option with standard terminal screws
6
7
8
-
-
-
Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
dv/dt code: H ≤ 400V/µs
tq code: K ≤ 20µs
J ≤ 25µs
9
-
None = Standarddevices
N
= Aluminumnitradesubstrate
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.F102.. Series
Bulletin I27097 rev. A 09/97
Outline Table
-
-
-
All dimensions in millimeters (inches)
Dimensions are nominal
Full engineering drawings are available
on request
-
-
UL identification number for gate and
cathode wire: UL 1385
UL identification number for package:
UL 94V0
For all types
A
B
C
D
E
IRK...1
IRK...2
25 (0.98)
----
----
41 (1.61) 47 (1.85)
23 (0.91) 30 (1.18) 36 (1.42)
----
----
IRKTF..
IRKHF..
IRKLF..
IRKUF..
IRKVF..
IRKKF..
IRKNF..
130
120
110
100
90
130
120
110
100
90
IRK.F102.. Se rie s
IRK.F102.. Se rie s
R
(DC) = 0.17 K/W
th JC
R
(DC ) = 0.17 K/ W
thJC
C ond u ction Ang le
Co n d uctio n Pe rio d
30°
30°
60°
60°
90°
120°
90°
120°
180°
180°
DC
80
0
80
0
20
40
60
80
100
120
20 40 60 80 100 120 140 160 180
Ave ra g e On -sta te C urre nt (A)
Ave ra g e O n-sta te C urre n t (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
5
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IRK.F102.. Series
Bulletin I27097 rev. A 09/97
200
280
240
200
160
120
80
180°
120°
90°
60°
DC
180°
120°
90°
60°
30°
180
160
140
120
100
80
30°
RMS Limit
RMS Lim it
C o nd u ctio n Ang le
Co nd u ctio n Pe rio d
60
IRK.F102.. Se rie s
Pe r Junc tio n
IRK.F102.. Se rie s
Pe r Junc tio n
40
40
20
T = 125°C
T = 125°C
J
J
0
0
0
20
Avera g e On -sta te Curre nt (A)
Fig. 3 - On-state Power Loss Characteristics
40
60
80
100
120
0
20 40 60 80 100 120 140 160 180
Ave ra g e O n-sta te C urre nt (A)
Fig. 4 - On-state Power Loss Characteristics
3000
2800
2600
2400
2200
2000
1800
2600
At Any Ra te d Lo a d Co nd itio n And With
Ma ximu m No n Re p e titive Surg e C urren t
Ve rsus Pulse Tra in Dura tion. Control
Of Co nd uc tio n Ma y Not Be Ma inta ined .
Ra te d V
Ap p lie d Follo wing Surg e.
RRM
Initia l T = 125°C
2400
2200
2000
1800
1600
1400
J
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Vo lta g e Re a p p lie d
Ra te d V
RRM
Re a p p lie d
IRK.F102.. Se rie s
Pe r J unc tion
1600 IRK.F102.. Se rie s
Pe r Jun c tion
1400
0.01
1
10
100
0.1
Pulse Tra in Dura tion (s)
1
Nu mb e r Of Eq u a l Am p litu d e Ha lf C yc le C u rre nt Pulse s (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
1
Ste a d y Sta te Va lue
R
= 0.17 K/W
thJC
(DC O p e ra tio n)
1000
100
10
0.1
0.01
T = 25°C
J
T = 125°C
J
IRK.F102.. Se rie s
Pe r Junc tion
IRK.F102.. Se rie s
Pe r Junc tion
0.001
0.5
1
1.5
Insta n ta n e ous O n-sta te Vo lta g e (V)
Fig. 7 - On-state Voltage Drop Characteristics
2
2.5
3
3.5
4
4.5
5
5.5
0.001
0.01
0.1
1
10
100
Sq ua re Wa ve Pulse Dura tio n (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
6
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IRK.F102.. Series
Bulletin I27097 rev. A 09/97
200
180
160
140
120
100
80
160
140
120
100
80
I
= 500 A
TM
I
= 500 A
IRK.F102.. Serie s
= 125°C
TM
IRK.F102.. Se rie s
= 125 °C
T
T
J
300 A
J
300 A
200 A
100 A
200 A
100 A
50 A
60
50 A
60
40
40
20
20
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te O f Fa ll Of On-sta te C urre nt - d i/d t (A/ µs)
Ra te O f Fa ll O f O n-sta te C urre nt - d i/d t (A/ µs)
Fig. 9 - Reverse Recovery Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
1E4
1E3
1E2
Sn ub b e r circuit
Sn ub b e r c irc uit
IRK.F102.. Se rie s
Sinusoid a l Pulse
IRK.F102.. Se rie s
Sin uso id a l Pulse
R
C
V
= 47 o hm s
= 0.22 µF
= 80% V
R
C
V
= 47 oh m s
= 0.22 µF
= 80% V
s
s
s
s
T
= 60 °C
T
= 90 °C
C
C
tp
tp
DRM
DRM
D
D
50 Hz
50 Hz
150
150
400
1000
400
2500
1000
2500
5000
5000
1E1
1E2
1E3
1E411E1
1E2
1E3
1E4
Pu lse Ba se wid th (µs)
Pulse Ba se w id th (µs)
Fig. 11 - Frequency Characteristics
1E4
1E3
1E2
Snub b e r c irc uit
Snub b e r c irc uit
IRK.F102.. Se rie s
Tra p e zoid a l Pu lse
T = 90°C , d i/d t 100A/µs
C
IRK.F102.. Se rie s
Tra p e zo id a l Pulse
R
C
V
= 47 oh m s
= 0.22 µF
R
C
V
= 47 ohm s
= 0.22 µF
= 80% V
DRM
s
s
s
s
T
= 90°C, d i/d t 50A/µs
C
tp
tp
= 80% V
DRM
D
D
50 Hz
150
50 Hz
400
400
1000
150
1000
2500
2500
1E2
5000
5000
1E1
1E2
1E3
1E4
11E1
1E3
1E4
Pulse Ba sewidth (µs)
Pulse Ba se wid th (µs)
Fig. 12 - Frequency Characteristics
7
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IRK.F102.. Series
Bulletin I27097 rev. A 09/97
1E4
Snu bb e r c irc u it
Sn ub b e r c irc uit
IRK.F102.. Se rie s
Tra p e zo id a l Pulse
T C = 60°C, d i/ dt 100A/ µs
IRK.F102.. Se rie s
Tra p e zoid a l Pulse
R
C
= 47 o hm s
= 0.22 µF
R
C
V
= 47 o hm s
= 0.22 µF
= 80% V
s
s
s
s
T
= 60°C, d i/d t 50A/µs
C
tp
tp
V
= 80% V
D
DRM
DRM
D
50 Hz
1E3
150
50 Hz
150
400
400
1000
1000
2500
2500
5000
5000
1E2
1E1
1E2
1E3
1E
4
1
E1
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba se wid th (µs)
Fig. 13 - Frequency Characteristics
1E4
1E3
1E2
1E1
10 jo ule s p e r p ulse
10 joule s pe r p ulse
5
5
2.5
2.5
1
0.5
0.25
0.1
0.05
1
0.5
0.25
0.1
0.05
IRK.F102.. Se rie s
IRK.F102.. Se rie s
Sinuso id a l pulse
Tra p e zoida l Pulse
di/d t 50A/µs
tp
tp
1E4
11E1
1E1
1E2
1E3
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba se wid th (µs)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100
10
1
Re c ta ngula r g a te pulse
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3m s
a ) Re c om m e nde d lo a d line for
ra te d di/ d t : 20V, 10ohm s; tr<=1 µs
b ) Re c om m end ed loa d line fo r
<=30% ra te d di/ d t : 10V, 20ohm s
tr<=1 µs
(a )
(b )
(1)
(2)
(3) (4)
VGD
IGD
IRK.F102.. Se rie s Fre q ue nc y Limite d b y PG (AV)
10 100
0.1
0.01
0.1
1
Insta n ta ne o us Ga te C urre nt (A)
Fig. 15 - Gate Characteristics
8
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