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IRKL56/08 [INFINEON]

Silicon Controlled Rectifier, 135A I(T)RMS, 55000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-240AA;
IRKL56/08
型号： IRKL56/08
厂家： Infineon    Infineon
描述：

Silicon Controlled Rectifier, 135A I(T)RMS, 55000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-240AA
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Bulletin I27131 rev. C 09/97  
IRK.41, .56 SERIES  
NEWADD-A-pakTM Power Modules  
THYRISTOR/ DIODE and  
THYRISTOR/ THYRISTOR  
Features  
45 A  
60 A  
Electrically isolated: DBC base plate  
3500 VRMS isolating voltage  
Standard JEDEC package  
Simplified mechanical designs, rapid assembly  
Auxiliary cathode terminals for wiring convenience  
High surge capability  
Wide choice of circuit configurations  
Large creepage distances  
UL E78996 approved  
Description  
These IRK series of NEW ADD-A-paks use power  
diodes and thyristors in a variety of circuit configura-  
tions. The semiconductor chips are electrically iso-  
lated from the base plate, allowing common heatsinks  
and compact assemblies to be built. They can be  
interconnected to form single phase or three phase  
bridges or AC controllers. These modules are intended  
for general purpose high voltage applications such as  
high voltage regulated power supplies, lighting  
circuits, and temperature and motor speed control  
circuits.  
Major Ratings and Characteristics  
Parameters IRK.41  
IRK.56  
Units  
IT(AV)or IF(AV)  
45  
60  
A
A
@85°C  
IO(RMS) (*)  
100  
135  
ITSM @50Hz  
IFSM @60Hz  
850  
890  
1310  
1370  
A
A
2
2
I t @50Hz  
3.61  
8.50  
KA s  
2
@60Hz  
3.30  
36.1  
7.82  
85.0  
KA s  
2
2
I √t  
KA √s  
VRRM range  
400to1600  
V
o
TSTG  
-40to125  
-40to125  
C
o
TJ  
C
(*) As AC switch.  
www.irf.com  
1
IRK.41, .56 Series  
Bulletin I27131 rev. C 09/97  
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
VRRM , maximum  
repetitive  
peak reverse voltage peak reverse voltage  
VRSM , maximum  
non-repetitive  
VDRM , max. repetitive IRRM  
peak off-state voltage, IDRM  
Voltage  
Type number  
Code  
gate open circuit  
125°C  
mA  
-
V
V
V
04  
06  
08  
400  
500  
400  
600  
700  
600  
800  
900  
800  
IRK.41/ .56  
10  
12  
14  
16  
1000  
1200  
1400  
1600  
1100  
1300  
1500  
1700  
1000  
1200  
1400  
1600  
15  
On-state Conduction  
Parameters  
IRK.41  
IRK.56  
Units  
Conditions  
IT(AV) Max. average on-state  
current (Thyristors)  
45  
45  
60  
60  
180o conduction, half sine wave,  
TC =85oC  
IF(AV) Maximum average  
forward current (Diodes)  
IO(RMS) Max. continuous RMS  
on-state current.  
100  
135  
or  
I(RMS)  
I(RMS)  
As AC switch  
A
ITSM  
or  
Max. peak, one cycle  
non-repetitive on-state  
or forward current  
850  
890  
715  
750  
940  
985  
3.61  
3.30  
2.56  
2.33  
4.42  
4.03  
1310  
1370  
1100  
1150  
1450  
1520  
8.56  
7.82  
6.05  
5.53  
10.05  
9.60  
t=10ms No voltage  
Sinusoidal  
half wave,  
Initial TJ = TJ max.  
t=8.3ms reapplied  
t=10ms 100% VRRM  
t=8.3ms reapplied  
t=10ms TJ = 25oC,  
IFSM  
t=8.3ms no voltage reapplied  
t=10ms No voltage  
I2t  
Max. I2t for fusing  
t=8.3ms reapplied  
Initial TJ = TJ max.  
t=10ms 100% VRRM  
t=8.3ms reapplied  
t=10ms TJ = 25oC,  
KA2s  
t=8.3ms no voltage reapplied  
I2√t  
Max. I2√t for fusing (1)  
36.1  
0.88  
0.91  
5.90  
5.74  
85.6  
0.85  
0.88  
3.53  
3.41  
KA2√s  
t=0.1 to 10ms, no voltage reapplied  
TJ = TJ max  
VT(TO) Max. value of threshold  
voltage (2)  
Low level (3)  
High level (4)  
V
TJ = TJ max  
TJ =25oC  
r
Max. value of on-state  
slope resistance (2)  
Max. peak on-state or  
Low level (3)  
High level (4)  
ITM=π x IT(AV)  
t
mΩ  
VTM  
VFM  
1.81  
1.54  
V
forward voltage  
IFM=π x IF(AV)  
di/dt Max. non-repetitive rate  
of rise of turned on  
T = 25oC, from 0.67 VDRM  
,
ITJM =π x I T(AV), I = 500mA,  
g
150  
A/µs  
mA  
current  
t < 0.5 µs, t > 6 µs  
r
p
TJ = 25oC, anode supply = 6V,  
resistive load, gate open circuit  
TJ = 25oC, anode supply = 6V,resistive load  
2
IH  
IL  
Max. holding current  
Max. latching current  
200  
400  
(1) I2t for time tx = I2√t x √tx  
(4) I > π x IAV  
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS)  
)
(3) 16.7% x π x IAV < I < π x IAV  
www.irf.com  
2
IRK.41, .56 Series  
Bulletin I27131 rev. C 09/97  
Triggering  
Parameters  
IRK.41  
10  
IRK.56  
10  
Units  
Conditions  
PGM Max. peak gate power  
W
A
PG(AV) Max. average gate power  
2.5  
2.5  
IGM  
Max. peak gate current  
2.5  
2.5  
-VGM Max. peak negative  
gate voltage  
10  
4.0  
2.5  
1.7  
TJ=-40°C  
TJ= 25°C  
TJ= 125°C  
V
VGT Max. gate voltage  
required to trigger  
Anodesupply=6V  
resistive load  
270  
150  
80  
TJ=-40°C  
TJ= 25°C  
Anodesupply=6V  
resistive load  
IGT  
Max. gate current  
required to trigger  
mA  
TJ =125°C  
TJ= 125oC,  
rated VDRM applied  
TJ= 125oC,  
rated VDRM applied  
VGD Max. gate voltage  
that will not trigger  
0.25  
6
V
IGD  
Max. gate current  
that will not trigger  
mA  
Blocking  
Parameters  
IRK.41  
IRK.56  
Units  
mA  
Conditions  
IRRM Max. peak reverse and  
IDRM off-state leakage current  
at VRRM, VDRM  
15  
TJ = 125 oC, gate open circuit  
2500 (1 min)  
3500 (1 sec)  
50 Hz, circuit to base, all terminals  
shorted  
VINS RMS isolation voltage  
V
dv/dt Max. critical rate of rise  
of off-state voltage (5)  
TJ = 125oC, linear to 0.67 VDRM  
gate open circuit  
,
500  
V/µs  
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT41/16 S90.  
Thermal and Mechanical Specifications  
Parameters  
IRK.41  
IRK.56  
Units  
°C  
Conditions  
TJ  
T
Junction operating  
temperature range  
Storage temp. range  
- 40 to 125  
- 40 to 125  
stg  
RthJC Max. internal thermal  
resistance, junction  
to case  
0.23  
0.20  
Per module, DC operation  
K/W  
Nm  
RthCS Typical thermal resistance  
case to heatsink  
Mountingsurfaceflat,smoothandgreased.  
Flatness<0.03mm;roughness< 0.02mm  
0.1  
T
Mounting torque ± 10%  
to heatsink  
Amountingcompoundisrecommended  
andthetorqueshouldberecheckedaftera  
periodof3hourstoallowforthespreadof  
thecompound  
5
3
busbar  
wt  
Approximate weight  
83 (3)  
g (oz)  
Case style  
TO-240AA  
JEDEC  
www.irf.com  
3
IRK.41, .56 Series  
Bulletin I27131 rev. C 09/97  
∆R Conduction (per Junction)  
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)  
Sine half wave conduction  
Rect. wave conduction  
Devices  
Units  
°C/W  
180o  
0.11  
0.09  
120o  
0.13  
0.11  
90o  
60o  
30o  
180o  
0.09  
0.07  
120o  
0.14  
0.11  
90o  
60o  
30o  
IRK.41  
IRK.56  
0.17  
0.13  
0.23  
0.18  
0.34  
0.27  
0.18  
0.14  
0.23  
0.19  
0.34  
0.28  
Outlines Table  
IRKT../.. (*)  
Screws M5 x 0.8  
IRKH../.. (*)  
18 REF.  
(0.71)  
15.5 ± 0.5  
(0.61 ± 0.02)  
15.5 ± 0.5  
(0.61 ± 0.02)  
18 REF.  
(0.71)  
Screws M5 x 0.8  
Faston tab. 2.8 x 0.8  
Faston tab. 2.8 x 0.8  
(0.11 x 0.03)  
(0.11 x 0.03)  
6.3 ± 0.3  
6.3 ± 0.3  
(0.25 ± 0.01)  
(0.25 ± 0.01)  
20 ± 0.5  
20 ± 0.5  
(0.79 ± 0.02)  
(0.79 ± 0.02)  
20 ± 0.5  
(0.79 ± 0.02)  
20 ± 0.5  
(0.79 ± 0.02)  
15 ± 0.5  
(0.59 ± 0.02)  
15 ± 0.5  
(0.59 ± 0.02)  
80 ± 0.3  
(3.15 ± 0.01)  
80 ± 0.3  
(3.15 ± 0.01)  
92 ± 0.5  
(3.62 ± 0.02)  
92 ± 0.5  
(3.62 ± 0.02)  
IRKL../.. (*)  
18 REF.  
(0.71)  
15.5 ± 0.5  
(0.61 ± 0.02)  
Screws M5 x 0.8  
Faston tab. 2.8 x 0.8  
(0.11 x 0.03)  
6.3 ± 0.3  
(0.25 ± 0.01)  
20 ± 0.5  
(0.79 ± 0.02)  
20 ± 0.5  
(0.79 ± 0.02)  
15 ± 0.5  
(0.59 ± 0.02)  
80 ± 0.3  
(3.15 ± 0.01)  
92 ± 0.5  
(3.62 ± 0.02)  
All dimensions in millimeters (inches)  
(*) For terminals connections, see Circuit configurations Table  
NOTE: To order the Optional Hardware see Bulletin I27900  
www.irf.com  
4
IRK.41, .56 Series  
Bulletin I27131 rev. C 09/97  
Circuit Configurations Table  
IRKT  
IRKH  
(1)  
IRKL  
(1)  
~
(1)  
~
~
+
(2)  
+
(2)  
+
(2)  
-
(3)  
-
(3)  
-
(3)  
K2 G2  
(7) (6)  
G1  
(4) (5)  
G1 K1  
(4) (5)  
K1  
K2 G2  
(7) (6)  
Ordering Information Table  
Device Code  
IRK  
T
56  
/
16 S90  
IRK.57 types  
With no auxiliary cathode  
3
4
1
2
5
13.8 (0.53)  
1
2
3
4
5
-
-
-
-
-
Moduletype  
Circuitconfiguration(SeeCircuitConfigurationtable)  
Current code* *  
* *  
Available with no auxiliary cathode.  
To specify change: 41 to 42  
56 to 57  
Voltagecode (See Voltage Ratings table)  
dv/dt code:  
S90 = dv/dt 1000 V/µs  
e.g. : IRKT57/16 etc.  
No letter = dv/dt 500 Vµs  
130  
120  
110  
100  
90  
130  
120  
110  
100  
90  
IRK.41.. Se rie s  
IRK.41.. Se rie s  
R
(DC) = 0.46 K/W  
R
(DC ) = 0.46 K/ W  
thJC  
thJC  
C o nd uc tio n Ang le  
C o nd uc tio n Pe rio d  
30°  
60°  
30°  
60°  
90°  
90°  
120°  
120°  
180°  
180°  
DC  
60  
80  
80  
0
10  
Ave ra g e On-sta te C urre nt (A)  
Fig. 1 - Current Ratings Characteristics  
20  
30  
40  
50  
0
20  
40  
80  
Ave ra g e O n-sta te C urre nt (A)  
Fig. 2 - Current Ratings Characteristics  
www.irf.com  
5
IRK.41, .56 Series  
Bulletin I27131 rev. C 09/97  
70  
100  
80  
60  
40  
20  
0
DC  
180°  
120°  
90°  
60°  
30°  
180°  
120°  
90°  
60°  
30°  
60  
50  
RMS Limit  
RMS Lim it  
40  
30  
20  
10  
0
C o nd uc tio n An g le  
C o nd uc tio n Pe rio d  
IRK.41.. Se rie s  
Pe r Junc tion  
T = 125°C  
IRK.41.. Se ries  
Pe r Jun ctio n  
= 125°C  
T
J
J
0
10  
20  
30  
40  
50  
0
20  
Ave ra g e On -sta te C urre n t (A)  
Fig. 4 - On-state Power Loss Characteristics  
40  
60  
80  
Ave ra g e O n-sta te Curre nt (A)  
Fig. 3 - On-state Power Loss Characteristics  
800  
700  
600  
500  
400  
300  
900  
At Any Ra te d Loa d Cond itio n And With  
Ma xim um No n Re p e titive Surg e Curre nt  
Ve rsus Pulse Tra in Dura tion. Co ntrol  
Of Co nd uc tio n Ma y No t Be Ma inta ine d.  
Ra te d V  
Ap p lie d Fo llo wing Surg e .  
RRM  
In itia l T = 125°C  
J
800  
700  
600  
500  
400  
300  
Initia l T = 125°C  
@ 60 Hz 0.0083 s  
@ 50 Hz 0.0100 s  
J
No Volta g e Re a p p lie d  
Ra te d V  
Re a p p lie d  
RRM  
IRK.41.. Serie s  
Per Junc tion  
IRK.41.. Se rie s  
Pe r Jun c tio n  
1
10  
100  
0.01  
0.1  
1
Nu mb e r O f Eq ua l Amp litud e Ha lf Cyc le C urre nt Pulse s (N)  
Pulse Tra in Dura tio n (s)  
Fig. 6 - Maximum Non-Repetitive Surge Current  
Fig. 5 - Maximum Non-Repetitive Surge Current  
140  
180°  
120°  
0
.
7
120  
K
/
W
90°  
60°  
30°  
100  
80  
2
K
/
W
60  
C onduc tion Ang le  
40  
IRK.41.. Se rie s  
Pe r Mod ule  
20  
T
= 125°C  
J
0
0
20  
40  
60  
80  
100  
Ma xim um Allo wa b le Am b ie n t Te m p e ra ture (°C )  
Fig. 7 - On-state Power Loss Characteristics  
20  
40  
60  
80  
100 120 140  
To ta l RMS Outp ut Curre nt (A)  
www.irf.com  
6
IRK.41, .56 Series  
Bulletin I27131 rev. C 09/97  
350  
300  
250  
200  
150  
100  
50  
R
0
.
2
K
/
W
=
0
.
1
K
/
W
180°  
(Sine )  
180°  
-
D
e
l
t
a
R
(Re c t)  
0
.
7
K
/
W
1
K
/
W
2 x IRK.41.. Se rie s  
Sin g le Pha se Brid g e  
C o nn e c te d  
1
.
5
K
/
W
T
= 125°C  
J
0
0
20  
40  
60  
80  
100  
20  
40  
60  
80 100 120 140  
To ta lO utp ut C urre nt (A)  
Ma xim um Allo wa b le Amb ie nt Te m p e ra ture (°C )  
Fig. 8 - On-state Power Loss Characteristics  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
R
=
0
.
1
K
/
W
-
D
e
0
.
l
t
a
3
120°  
(Rec t)  
K
/
R
W
0
.
7
K
/
W
3 x IRK.41.. Se ries  
Thre e Pha se Brid g e  
Co n ne c te d  
T = 125°C  
J
0
0
20  
40  
60  
80  
100 120 140  
20  
40  
60  
80  
100 120 140  
To ta l Outp ut Curre nt (A)  
Ma xim um Allo wa b le Am b ien t Te mp e ra ture (°C)  
Fig. 9 - On-state Power Loss Characteristics  
130  
120  
110  
100  
90  
130  
120  
110  
100  
90  
IRK.56.. Se rie s  
IRK.56.. Se rie s  
R
(DC ) = 0.40 K/ W  
R
(DC) = 0.40 K/ W  
thJC  
thJC  
C o nd uc tio n Perio d  
C o nd u ctio n Angle  
30°  
60°  
90°  
90°  
80  
120°  
180°  
80  
60°  
120°  
DC  
80  
30°  
20  
180°  
70  
70  
0
10  
20  
30  
40  
50  
60  
70  
0
40  
60  
100  
Ave ra g e O n-sta te C urre nt (A)  
Fig. 10 - Current Ratings Characteristics  
Ave ra g e O n-sta te C urre n t (A)  
Fig. 11 - Current Ratings Characteristics  
www.irf.com  
7
IRK.41, .56 Series  
Bulletin I27131 rev. C 09/97  
90  
120  
100  
80  
60  
40  
20  
0
180°  
DC  
180°  
120°  
90°  
60°  
30°  
80  
70  
60  
50  
40  
30  
20  
10  
0
120°  
90°  
60°  
30°  
RMS Lim it  
RMS Lim it  
C ond uc tio n Perio d  
C o nd uc tio n Ang le  
IRK.56.. Se rie s  
Pe r Junc tio n  
IRK.56.. Serie s  
Pe r Jun ct io n  
T = 125°C  
J
T
= 125°C  
J
0
10  
Avera g e O n-sta te Curre n t (A)  
Fig. 12 - On-state Power Loss Characteristics  
20  
30  
40  
50  
60  
0
20  
40  
60  
80  
100  
Ave ra g e O n-sta te C urre nt (A)  
Fig. 13 - On-state Power Loss Characteristics  
1200  
1400  
Ma xim um Non Re p e titive Surg e Curre nt  
Ve rsus Pulse Tra in Dura tio n. Contro l  
Of Conduc tio n Ma y No t Be Ma inta ine d .  
At Any Ra te d Loa d Condition And With  
Ra te d V  
Ap plie d Follo wing Surge .  
RRM  
1100  
1000  
900  
Initia l T = 125°C  
J
1200  
1000  
800  
Initia l T = 125°C  
@ 60 Hz 0.0083 s  
@ 50 Hz 0.0100 s  
J
No Vo lta g e Re a p p lie d  
Ra te d V  
Re a p p lie d  
RRM  
800  
700  
600  
600  
IRK.56.. Serie s  
Per Junc tion  
IRK.56.. Se rie s  
Pe r Jun c tio n  
500  
400  
0.01  
1
10  
100  
0.1  
1
Num b e r O f Eq ua l Amp litud e Ha lf Cyc le C urre nt Pulse s (N)  
Pulse Tra in Dura tio n (s)  
Fig. 15 - Maximum Non-Repetitive Surge Current  
Fig. 14 - Maximum Non-Repetitive Surge Current  
200  
0
.
2
180°  
K
180  
/
W
120°  
160  
140  
120  
100  
80  
90°  
60°  
30°  
0
1
.
7
K
/
W
K
/
W
Conduc tion Ang le  
60  
2
4
K
/
W
W
IRK.56.. Se rie s  
Pe r Mod ule  
40  
K
/
20  
T
= 125°C  
J
0
0
20  
40  
60  
80  
100 120 140  
Ma ximum Allo wa b le Amb ie nt Te m p e ra ture (°C)  
Fig. 16 - On-state Power Loss Characteristics  
20  
40  
60  
80  
100 120 140  
Tota l RMS Outp ut Curre nt (A)  
www.irf.com  
8
IRK.41, .56 Series  
Bulletin I27131 rev. C 09/97  
450  
400  
350  
300  
250  
200  
150  
100  
50  
0
.
2
K
/
W
180°  
(Sine )  
180°  
(Re c t)  
1
2
2 x IRK.56.. Se ries  
Sin g le Pha se Brid g e  
Con ne c te d  
K
/
W
K
/ W  
T
= 125°C  
J
0
0
20  
40  
60  
80  
100 120 140  
20  
40  
60  
80  
100 120 140  
To ta l Outp ut Curre nt (A)  
Ma xim um Allo wa b le Am b ie n t Te mp e ra ture (°C)  
Fig. 17 - On-state Power Loss Characteristics  
600  
500  
400  
300  
200  
100  
0
R
t
h
S
A
=
0
.
1
K
/
W
-
D
e
120°  
(Re c t)  
l
t
a
R
0
1
3 x IRK.56.. Se ries  
Th re e Pha se Brid g e  
Con ne c te d  
. 7  
K
/
W
K
/
W
T = 125°C  
J
0
20 40 60 80 100 120 140 160 180  
20  
40  
60  
80  
100 120 140  
To ta l O utp ut Curre nt (A)  
Ma ximum Allo w a b le Amb ie nt Te m p erat ure (°C)  
Fig. 18 - On-state Power Loss Characteristics  
1000  
100  
10  
1000  
100  
10  
T = 25°C  
T = 25°C  
J
J
T = 125°C  
T = 125°C  
J
J
IRK.56.. Se rie s  
Pe r Junc tio n  
IRK.41.. Se rie s  
Pe r Junc tion  
1
1
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
0
1
2
3
4
5
6
7
Insta n ta n e o us On -sta te Volta g e (V)  
Fig. 19 - On-state Voltage Drop Characteristics  
In sta nta ne o us O n-sta te Vo lta g e (V)  
Fig. 20 - On-state Voltage Drop Characteristics  
www.irf.com  
9
IRK.41, .56 Series  
Bulletin I27131 rev. C 09/97  
500  
110  
100  
90  
I
= 200 A  
IRK.41.. Se rie s  
IRK.56.. Se rie s  
TM  
I
= 200 A  
100 A  
TM  
450  
T
= 125 °C  
100 A  
50 A  
20 A  
J
400  
350  
300  
250  
200  
150  
100  
80  
50 A  
70  
10 A  
60  
20 A  
10 A  
50  
IRK.41.. Se rie s  
IRK.56.. Se rie s  
T = 125 °C  
40  
J
30  
10 20 30 40 50 60 70 80 90 100  
10 20 30 40 50 60 70 80 90 100  
Ra te O f Fa ll Of Forwa rd C urre nt - d i/ d t (A/ µs)  
Ra te Of Fa ll O f O n-sta te C urre n t - d i/ d t (A/ µs)  
Fig. 21 - Recovery Charge Characteristics  
Fig. 22 - Recovery Current Characteristics  
1
Ste a d y Sta te Va lue :  
R
R
= 0.46 K/ W  
= 0.40 K/ W  
thJC  
thJC  
(DC Op e ra tio n)  
IRK.41.. Se rie s  
IRK.56.. Se rie s  
0.1  
Pe r Junc tio n  
0.01  
0.001  
0.01  
0.1  
Sq ua re Wa ve Pulse Dura tion (s)  
1
10  
Fig. 23 - Thermal Impedance ZthJC Characteristics  
100  
10  
1
Rec ta ng ula r ga te p ulse  
(1) PG M = 100 W, tp = 500 µs  
a )Re c omm e nde d loa d line for  
ra te d di/ d t: 20 V, 30 o hm s  
tr = 0.5 µs, t p >= 6 µs  
b)Re c om me nde d loa d line for  
<= 30% ra te d d i/ dt: 20 V, 65 ohms  
tr = 1 µs, tp >= 6 µs  
(2) PG M = 50 W, tp = 1 ms  
(3) PG M = 20 W, tp = 25 ms  
(4) PG M = 10 W, tp = 5 ms  
(a )  
(b )  
(4) (3) (2) (1)  
VGD  
IGD  
0.01  
IRK.41../.56.. Se rie s Fre q ue nc y Lim ite d b y PG(AV)  
0.1 10 100  
0.1  
0.001  
1
1000  
In sta nta ne ous G a te C urre nt (A)  
Fig. 24 - Gate Characteristics  
www.irf.com  
10  

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