IRKT105/10S90P [INFINEON]
Silicon Controlled Rectifier, 105000mA I(T), 1000V V(RRM),;
| 型号： | IRKT105/10S90P |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 105000mA I(T), 1000V V(RRM), 栅 栅极 |
| 文件： | 总8页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27215 01/07
IRK.105..PbF SERIES
ADD-A-pakTM GEN V Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
Benefits
High Voltage
Up to 1600V
Industrial Standard Package
Thickcopperbaseplate
UL E78996 approved
3500VRMS isolatingvoltage
TOTALLYLEAD-FREE
Full compatible TO-240AA
High Surge capability
105 A
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
Mechanical Description
Theelectricalterminalsaresecuredagainstaxialpull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
The Generation V of Add-A-pak module combine the
excellentthermalperformanceobtainedbytheusageof
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solidCopperbaseplateatthebottomsideofthedevice.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Major Ratings and Characteristics
Parameters
IT(AV)or IF(AV)
Values
Units
105
235
A
@85°C
IO(RMS) (*)
ITSM @50Hz
IFSM @60Hz
1785
1870
15.91
14.52
159.1
A
2
2
I t @50Hz
KA s
@60Hz
2
2
I √t
KA √s
VRRM range
400to1600
-40to150
-40to130
V
TSTG
TJ
oC
(*) As AC switch.
1
www.irf.com
IRK.105..P Series
Bulletin I27215 01/07
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , maximum
repetitive
peak reverse voltage peak reverse voltage
VRSM , maximum
non-repetitive
VDRM , max. repetitive
peak off-state voltage,
gate open circuit
IRRM
IDRM
130°C
mA
Voltage
Code
Type number
-
V
V
V
04
06
08
400
600
800
1000
1200
500
700
900
1100
1300
400
600
800
IRK.105
10
12
14
16
1000
1200
20
1400
1600
1500
1700
1400
1600
On-state Conduction
Parameters
IRK.105
105
Units
Conditions
IT(AV) Max. average on-state
current (Thyristors)
180o conduction, half sine wave,
TC =85oC
IF(AV) Max. average forward
current (Diodes)
IO(RMS) Max. continuous RMS
on-state current.
235
or
I(RMS)
I(RMS)
As AC switch
A
ITSM Max. peak, one cycle
1785
1870
1500
1570
2000
2100
15.91
14.52
11.25
10.27
20.00
18.30
159.1
0.80
t =10ms No voltage
Sinusoidal
half wave,
Initial TJ =TJ max.
or
non-repetitive on-state
t =8.3ms reapplied
t =10ms 100%VRRM
t =8.3ms reapplied
t =10ms TJ =25oC,
IFSM or forward current
t =8.3ms no voltage reapplied
t =10ms No voltage
I2t
Max. I2t for fusing
t =8.3ms reapplied
Initial TJ =TJ max.
t =10ms 100%VRRM
KA2s
t =8.3ms reapplied
t =10ms TJ =25oC,
t =8.3ms no voltage reapplied
t =0.1to10ms,no voltage reappl. TJ=TJ max
Low level (3)
I2√t
Max. I2√t for fusing (1)
KA2√s
VT(TO) Max. value of threshold
voltage (2)
V
TJ = TJ max
0.85
High level (4)
r
Max. value of on-state
2.37
Low level (3)
TJ = TJ max
High level (4)
t
mΩ
slope resistance (2)
2.25
VTM
Max. peak on-state or
ITM=πxIT(AV)
TJ = 25°C
1.64
V
VFM forward voltage
IFM =π x IF(AV)
di/dt Max. non-repetitive rate
TJ = 25oC, from 0.67 VDRM
,
of rise of turned on
current
150
250
A/μs
ITM =π x IT(AV), I = 500mA,
g
t < 0.5 μs, t > 6 μs
p
r
IH
Max. holding current
TJ = 25oC, anode supply = 6V,
mA
resistive load, gate open circuit
IL
Max. latching current
400
TJ=25oC,anode supply=6V,resistive load
2
(1) I2t for time tx = I2√t x √tx
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
)
(3) 16.7% x p x IAV < I < p x IAV
(4) I > p x IAV
www.irf.com
2
IRK.105..P Series
Bulletin I27215 01/07
Triggering
Parameters
IRK.105
Units
Conditions
PGM Max. peak gate power
12
3
W
A
PG(AV) Max. average gate power
IGM
Max. peak gate current
3
-VGM Max.peak negative
gate voltage
10
VGT Max. gate voltage
required to trigger
4.0
2.5
1.7
270
150
80
TJ =-40°C
TJ =25°C
V
Anode supply=6V
resistive load
TJ =125°C
TJ =-40°C
TJ =25°C
IGT
Max. gate current
required to trigger
Anode supply=6V
resistive load
mA
TJ =125°C
TJ=125oC,
rated VDRM applied
VGD Max. gate voltage
that will not trigger
0.25
6
V
TJ=125oC,
rated VDRM applied
IGD
Max. gate current
that will not trigger
mA
Blocking
Parameters
IRK.105
20
Units
mA
Conditions
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
TJ = 130oC, gate open circuit
VINS RMS isolation voltage
2500 (1 min)
3500 (1 sec)
50 Hz, circuit to base, all terminals
shorted
V
dv/dt Max. critical rate of rise
of off-state voltage (5)
TJ = 130oC, linear to 0.67 VDRM
gate open circuit
,
500
V/μs
(5) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. IRKT105/16AS90.
Thermal and Mechanical Specifications
Parameters
IRK.105
Units
°C
Conditions
TJ
T
Junction operating
temperature range
Storage temp. range
- 40 to 130
-40to150
stg
RthJC Max. internal thermal
resistance, junction
to case
0.135
Per module,DC operation
K/W
RthCS Typical thermal resistance
case to heatsink
Mounting surface flat, smooth and greased
0.1
5
T
Mounting torque ± 10%
to heatsink
busbar
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
Nm
3
wt
Approximate weight
Case style
110(4)
gr(oz)
TO-240AA
JEDEC
ΔR Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
Rect. wave conduction
Devices
IRK.105
Units
°C/ W
180o
0.04
120o
90o
60o
30o
180o
0.03
120o
90o
60o
30o
0.05
0.06
0.08
0.12
0.05
0.06
0.08
0.12
www.irf.com
3
IRK.105..P Series
Bulletin I27215 01/07
OrderingInformationTable
Device Code
IRK.106 types
With no auxiliary cathode
IRK
T
105
/
16 S90
P
1
2
3
5
6
4
1
2
3
4
5
-
-
-
-
-
Module type
Circuit configuration (See Circuit Configuration table below)
Current code * *
* * Available with no auxiliary cathode.
To specify change:
105 to 106
Voltage code (See Voltage Ratings table)
dv/dtcode:
S90 = dv/dt 1000 V/μs
e.g. : IRKT106/16P etc.
No letter = dv/dt 500 Vμs
6
-
P = Lead-Free
OutlineTable
Dimensions are in millimeters and [inches]
IRKN
IRKT
IRKH
IRKL
(1)
~
(1)
~
(1)
~
(1)
-
+
(2)
+
+
(2)
+
(2)
(2)
(3)
-
(3)
-
(3)
+
-
(3)
G1
(4) (5)
K2 G2
(7) (6)
G1 K1
(4) (5)
K1
G1 K1
(4) (5)
K2 G2
(7)
(6)
NOTE: To order the Optional Hardware see Bulletin I27900
www.irf.com
4
IRK.105..P Series
Bulletin I27215 01/07
130
120
110
100
90
130
120
110
100
90
IRK.105.. Series
(DC) = 0.27 K/W
IRK.105.. Series
R
R
(DC) = 0.27 K/W
thJC
thJC
Conduction Angle
Conduction Period
30°
40
30°
60°
60
60°
90°
90°
80
80
120°
180°
120°
DC
180°
70
70
0
20
80
100 120
0
20 40 60 80 100 120 140 160 180
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
160
140
120
100
80
200
180
160
140
120
100
80
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RM S Li m it
RM S Lim it
Conduction Period
60
Conduction Angle
60
40
IRK.105.. Series
Per Junction
IRK.105.. Series
Per Junction
40
20
T = 130°C
20
J
T = 130°C
J
0
0
0
20
40
60
80
100 120
0
20 40 60 80 100 120 140 160 180
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
1600
1500
1400
1300
1200
1100
1000
900
1800
1600
1400
1200
1000
800
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
Initial T = 130°C
J
Initial T = 130°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
IRK.105.. Series
Per Junction
IRK.105.. Series
Per Junction
800
600
700
0.01
0.1
Pulse Train Duration (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
www.irf.com
5
IRK.105..P Series
Bulletin I27215 01/07
350
300
250
200
150
R
0
=
180°
120°
90°
60°
30°
.
2
0
.
K
1
/
W
K
/
W
0
-
.
3
D
K
e
l
/
W
t
a
R
0
.
5
K
/
W
Conduction Angle
100
50
0
IRK.105.. Series
Per Mod ule
T = 130°C
J
0
40
80
120 160 200 240 20 40 60 80 100 120 140
Total RMSOutput Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-state Power Loss Characteristics
600
500
400
300
200
100
0
t
h
S
180°
(Sine)
180°
A
(Rect)
0
.
3
K
/
W
2 x IRK.105.. Series
Single Phase Bridge
Connected
2
K
/
W
T
= 13 0° C
J
0
40
80
120
160
200 20
40 60 80 100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-state Power Loss Characteristics
900
800
700
600
500
400
300
200
100
0
120°
(Rect)
0
.
2
K
/
W
3 x IRK.105.. Series
Three Phase Bridge
Connected
1
K
/
W
T = 130°C
J
0
40 80 120 160 200 240 280 20 40 60
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-state Power Loss Characteristics
80 100 120 140
Total Output Current (A)
www.irf.com
6
IRK.105..P Series
Bulletin I27215 01/07
1000
100
10
T = 25° C
J
T = 130°C
J
IRK.105.. Series
Per Junction
1
0
0.5
1
1.5
2
2.5
3
3.5
InstantaneousOn-state Voltage (V)
Fig. 10 - On-state Voltage Drop Characteristics
140
700
600
500
400
300
200
100
I
= 200 A
100 A
TM
IRK.105.. Series
T = 125 °C
I
= 200 A
IRK.105.. Series
TM
J
T = 125 °C
120
100
80
J
100 A
50 A
20 A
10 A
50 A
20 A
10 A
60
40
20
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 12 - Recovery Current Characteristics
Fig. 11 - Recovery Charge Characteristics
1
Steady State Value:
R
= 0.27 K/W
thJC
(DC Operation)
0.1
IRK.105.. Series
Pe r Junc t io n
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 13 - Thermal Impedance ZthJC Characteristics
www.irf.com
7
IRK.105..P Series
Bulletin I27215 01/07
100
Rectangular gate pulse
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
a)Recommended load line for
rated di/ dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30%rated di/dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
10
1
(a)
(b)
(3)
(4)
(2)
(1)
VGD
IGD
0.01
IRK.105.. Series
Frequency Limited by PG(AV)
10 100 1000
0.1
0.001
0.1
1
InstantaneousGate Current (A)
Fig. 14- Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 01/07
www.irf.com
8
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明