IRKT250-14D20N [INFINEON]
Silicon Controlled Rectifier, 250000mA I(T), 1400V V(RRM),;
| 型号： | IRKT250-14D20N |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 250000mA I(T), 1400V V(RRM), 栅 栅极 |
| 文件： | 总13页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27102 rev. A 10/97
IRK. SERIES
SCR / SCR and SCR / DIODE
MAGN-A-pakä Power Modules
Features
170A
230A
250A
High voltage
Electrically isolated base plate
3000 V
isolating voltage
RMS
Industrial standard package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
Description
This new IRK serie of MAGN-A-paks modules uses high
voltage power thyristor/thyristor and thyristor/diode in
seven basic configurations. The semiconductors are elec-
trically isolated from the metal base, allowing common
heatsinks and compact assemblies to be built. They can
be interconnected to form single phase or three phase
bridges or as AC-switches when modules are connected in
anti-parallel mode.
These modules are intended for general purpose applica-
tions such as battery chargers, welders and plating equip-
ment and where high voltage and high current are required
(motor drives, U.P.S., etc.).
Major Ratings and Characteristics
Parameters
IRK.170.. IRK.230.. IRK.250.. Units
I
I
I
@ 85°C
170
377
230
510
250
555
A
A
A
A
T(AV)
T(RMS)
TSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
5100
5350
131
7500
7850
280
8500
8900
361
2
2
I t
KA s
2
119
256
330
KA s
2
2
I √t
1310
2800
3610
KA √s
V
/ V
Upto1600 Up to 2000 Upto1600
-40 to 130
V
DRM
RRM
T
range
oC
J
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1
IRK.170, .230, .250 Series
Bulletin I27102 rev. A 10/97
ELECTRICALSPECIFICATIONS
Voltage Ratings
Typenumber
Voltage
Code
VRRMVDRM , maximum
repetitive peak reverse and
off-state blocking voltage
VRSM , maximum non-repetitive
peak reverse voltage
IRRM IDRM max
@ 130°C
V
400
V
500
m A
50
04
08
12
14
16
IRK.170-
IRK.250-
800
900
1200
1400
1600
1300
1500
1700
IRK.230-
08
12
16
18
20
800
1200
1600
1800
2000
900
1300
1700
1900
2100
50
On-state Conduction
Parameters
IRK.170 IRK.230 IRK.250 Units Conditions
IT(AV) Maximum average on-state current
@ Case temperature
170
85
230
85
250
85
A
oC
A
180o conduction, half sine wave
IT(RMS) Maximum RMS on -state current
377
510
555
as AC switch
ITSM Maximum peak, one-cycle on-state, 5100
7500
7850
6300
8500
8900
7150
A
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
non-repetitive surge current
5350
4300
4500
6600
7500
t = 8.3ms reapplied Sinusoidal half wave,
I2t
Maximum I2t for fusing
131
119
92.5
280
256
198
361
330
255
KA2s t = 10ms No voltage initial TJ = TJ max
t = 8.3ms reapplied
t = 10ms 100% VRRM
84.4
181
2800
1.03
1.07
233
t = 8.3ms reapplied
I2√t
Maximum I2√t for fusing
1310
3610 KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1Low level value of threshold voltage 0.89
T(TO)2High level value of threshold voltage 1.12
0.97
1.00
0.60
0.57
V
(16.7% xπ x IT(AV) < I <π x IT(AV)), TJ =TJ max.
(I >π x IT(AV)),TJ =TJ max.
V
rt1
rt2
Low level on-state slope resistance 1.34
High level on-state slope resistance 0.96
0.77
0.73
mΩ (16.7% xπ x IT(AV) < I <π x IT(AV)), TJ =TJ max.
(I >π x IT(AV)),TJ =TJ max.
ITM =π x IT(AV), TJ = TJ max., 180o conduction
VTM Maximumon-statevoltagedrop
1.60
1.59
1.44
V
2
Av. power = VT(TO) x IT(AV) + rf x (IT(RMS)
)
IH
IL
Maximum holding current
Maximum latching current
500
500
500
mA Anode supply=12V, initial IT=30A, TJ=25oC
1000
1000
1000
Anode supply=12V, resistive load=1Ω
gate pulse: 10V, 100µs, TJ = 25°C
Switching
Parameters
IRK.170 IRK.230 IRK.250 Units Conditions
td
tr
Typical delay time
Typical rise time
1.0
2.0
µs TJ = 25oC, Gate Current=1A dIg/dt=1A/µs
Vd = 0,67% VDRM
ITM = 300 A ; -dI/dt=15 A/µs; TJ = TJ max ;
Vr = 50 V; dV/dt = 20 V/µs ; Gate 0 V, 100 ohm
tq
Typicalturn-offtime
50 - 150
µs
2
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IRK.170, .230, .250 Series
Bulletin I27102 rev. A 10/97
Blocking
Parameters
IRK.170 IRK.230 IRK.250 Units Conditions
IRRM Max. peak reverse and off-state
IDRM leakage current
50
mA TJ=TJ max.
VINS RMS isolation voltage
3500
1000
V
50Hz, circuit to base, all termin. shorted, 25°C,1s
dv/dt Critical rate of rise of off-state voltage
V/µs TJ = TJ max, exponential to 67% rated VDRM
Triggering
Parameters
IRK.170 IRK.230 IRK.250 Units Conditions
I PGM Maximumpeakgatepower
10.0
W
tp ≤ 5ms,
TJ = TJ max.
PG(AV) Maximumaveragegatepower
+IGM Maximumpeakgatecurrent
-VGT Max.peaknegativegatevoltage
2.0
3.0
5.0
W
A
f=50Hz,
tp≤ 5ms,
tp ≤ 5ms,
TJ = TJ max.
TJ = TJ max.
TJ = TJ max.
V
VGT MaximumrequiredDCgate
voltagetotrigger
4.0
3.0
V
V
V
TJ = - 40oC
TJ = 25oC
Anodesupply=12V,resistive
load ; Ra = 1Ω
2.0
TJ = TJ max.
IGT
MaximumrequiredDCgate
currenttotrigger
350
200
100
mA TJ = - 40oC
mA TJ = 25oC
mA TJ = TJ max.
Anodesupply=12V,resistive
load ; Ra = 1Ω
VGD Maximumgatevoltage
thatwillnottrigger
0.25
10.0
500
V
@ TJ= TJ max., rated VDRM applied
IGD
Maximumgatecurrent
thatwillnottrigger
Max rate of rise of
turned-oncurrent
mA @ TJ= TJ max., rated VDRM applied
di/
dt
A/µs @ TJ= TJ max., ITM = 400 A rated VDRMapplied
Thermal and Mechanical Specifications
Parameters
IRK.170 IRK.230 IRK.250 Units Conditions
TJ
T
Junctionoperatingtemperature
Storagetemperaturerange
-40to130
-40to150
oC
oC
stg
RthJC Maximumthermalresistance
junctiontocase
0.17
0.02
0.125
0.02
0.125 K/W Perjunction,DCoperation
Mountingsurfaceflat,smoothandgreased
(permodule)
RthC-S Thermalresistance,casetoheatsink
0.02
K/W
T
Mounting tourque ±10%
MAP to heatsink
Busbar to MAP
A mounting compound is recommended and the
4 to 6
4 to 6
Nm tourque should be rechecked after a period of
Nm about 3 hours to allow for the spread of the
compound
wt
Approximateweight
Casestyle
500
17.8
g
oz
MAGN-A-pak
3
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IRK.170, .230, .250 Series
Bulletin I27102 rev. A 10/97
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sinusoidal conduction @ TJ max.
Rectangular conduction @ TJmax.
Devices
Units
180o
120o
90o
60o
30o
180o
0.007
0.007
0.007
120o
0.011
0.011
0.011
90o
60o
30o
IRK.170-
IRK.230-
IRK.250-
0.009
0.009
0.009
0.010
0.010
0.010
0.010
0.010
0.014
0.020
0.020
0.020
0.032
0.032
0.032
0.015
0.015
0.015
0.020
0.020
0.020
0.033 K/W
0.033
0.033
MAGN-A-paks Suitable for Current Source Inverters
Thyristor
Diode
VRRM
IT(AV) / IF(AV) @ TC
230A
VDRM
VRSM
170A
250A
VRRM
1400
1400
1600
1600
1800
1800
2000
2000
VRSM
2000
2000
2500
2500
2800
2800
3200
3200
@85°C
@85°C
@85°C
1500
1500
1700
1700
1900
1900
2100
2100
IRKH170-14D20
IRKL170-14D20
IRKH170-16D25
IRKL170-16D25
Not Available
IRKH230-14D20
IRKL230-14D20
IRKH230-16D25
IRKL230-16D25
IRKH230-18D28
IRKL230-18D28
IRKH230-20D32
IRKL230-20D32
IRKH250-14D20
IRKL250-14D20
IRKH250-16D25
IRKL250-16D25
Not Available
Not Available
Not Available
Not Available
Not Available
Not Available
Not Available
For all other parameters and characteristics refer to standard IRKH... and IRKL... modules.
ApplicationNotes
CurrentSourceInverters
Current-Source Inverters (also known as Sequentially
CommutatedInverters)usePhaseControl(asopposed
toFast)ThyristorsandDiodes.
3xIRKL...
The advantages of Current Source Inverters lie in their
easecontrol,absenceoflargecommutationinductances
andlimitedfaultcurrents.
Theirsimpleconstruction,illustrated bythecircuitonthe
left, is further enhanced by the use of MAGN-A-paks
whichallowthepowercircuitofanInvertertoberealised
with6capacitorsand9MAGN-A-paksallmountedonjust
oneheatsink.
M
3xIRKH...
TheoptimaldesignofCurrentSourceInvertersrequires
the use of Diodes with blocking voltages greater than
thoseofthethyristors.
Thisdeparturefromconventionalhalf-bridgemodulesis
catered for by MAGN-A-pak range with Thyristors up to
2000VandDiodesupto3200V.
3xIRKT...
Current Source Inverter using 9 MAGN-A-paks
4
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IRK.170, .230, .250 Series
Bulletin I27102 rev. A 10/97
OrderingInformationTable
Device Code
IRK
T
250
-
14 D20
N
1
2
3
6
4
5
1
2
3
4
5
6
7
-
-
-
-
-
-
Module type
Circuit configuration (See Outline Table)
Currentrating
Voltage code: Code x 100 = V
(See Voltage Ratings Table)
RRM
CurrentSourceInvertersTypes
None = Standard devices
N = aluminum nitrade substrate
Outline Table
-
-
-
All dimensions in millimeters (inches)
Dimensions are nominal
Full engineering drawings are available
on request
-
-
UL identification number for gate
and cathode wire: UL 1385
UL identification number for package:
UL 94V0
IRKH...
IRKL...
IRKV...
IRKT...
IRKU...
IRKK...
IRKN...
NOTE: To order the Optional Hardware see Bulletin I27900
5
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IRK.170, .230, .250 Series
Bulletin I27102 rev. A 10/97
130
130
120
110
100
90
IRK.170.. Se rie s
IRK.170.. Se rie s
(DC) = 0.17 K/W
R
(DC ) = 0.17 K/W
R
thJ C
thJC
120
110
100
90
Cond uc tion Ang le
C o nd uctio n Perio d
30°
30°
60°
80
80
60°
90°
120°
90°
120°
180°
70
70
180°
DC
250
60
60
0
40
80
120
160
200
0
50
100
150
200
300
Ave ra g e O n-sta te C urre nt (A)
Ave ra ge O n-sta te Curre n t (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
300
250
200
150
100
50
350
300
250
200
150
100
50
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RMS Lim it
RMS Limit
C o nd u ctio n Ang le
Cond uc tion Pe riod
IRK.170.. se rie s
Pe r Junc tion
IRK.170.. Se rie s
Pe r Junc tion
T
= 125°C
T = 125°C
J
J
0
0
0
40
80
120
160
200
0
50
100
150
200
250
300
Avera g e O n-sta te Curren t (A)
Ave ra g e O n-sta te C urre nt (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
5000
4500
4000
3500
3000
2500
2000
5000
4500
4000
3500
3000
2500
2000
At Any Ra te d Loa d Co nd ition And With
Ma xim um No n Re p e titive Surg e C urren t
Ve rsus Pulse Tra in Dura tio n. Co ntro l
Of Co nd uc tion Ma y Not Be Ma inta ine d .
Ra te d V
Ap p lie d Follo wing Surg e .
RRM
In itia l T = 130°C
J
Initia l T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Vo lta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
IRK.170.. Se rie s
Pe r Junc tio n
IRK.170.. Se rie s
Pe r Junc tio n
1
10
100
0.01
0.1
1
Nu m b e r Of Eq u a l Am p litu d e Ha lf C yc le C u rre n t Pu lse s (N)
Pulse Tra in Dura tion (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
6
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IRK.170, .230, .250 Series
Bulletin I27102 rev. A 10/97
400
350
300
250
200
150
100
50
0
0
R
.
180°
120°
90°
60°
30°
.
1
1
6
2
K
/
K
/
W
W
=
0
.
0
4
K
/
W
-
0
.
3
D
5
e
l
K
/
W
t
a
R
C o nd uc tio n An g le
IRK.170.. Se rie s
Pe r Mo d ule
T
= 130°C
J
0
0
0
0
50 100 150 200 250 300 350
Tota l RMS Outp ut Curre nt (A)
4
0
20
40
60
80
100
120
Ma ximum Allo wa b le Am b ie nt Tem p era ture (°C)
Fig. 7 - On-state Power Loss Characteristics
1000
900
800
700
600
500
400
300
200
100
0
R
=
0
.
0
2
K/
0
.
1
W
2
K
180°
(Sin e )
180°
/
-
W
0
0
D
.
.
1
2
6
e
K
l
/
t
W
a
R
K
/
W
(Re c t)
0
.
2
5
5
K
/
W
W
0
.
3
K
/
2 x IRK.170.. Se rie s
Sing le Ph a se Brid g e
Co n ne c te d
T
= 130°C
J
50 100 150 200 250 300 35
0
20
40
60
80
100
120
Tota l O utp ut Curre nt (A)
Ma xim um Allo wa b le Am b ie n t Te m p era ture (°C)
Fig. 8 - On-state Power Loss Characteristics
1600
1400
1200
1000
800
600
400
200
0
0
.
0
5
K
/
W
120°
(Re c t)
0
.
1
K/
W
W
0
.
1
6
K
/
3 x IRK.170.. Se rie s
Thre e Pha se Brid g e
C o nn e c te d
T = 130°C
J
100
Tota l O utp ut C urre nt (A)
Fig. 9 - On-state Power Loss Characteristics
200
300
400
5
0
20
40
60
80
100
120
Ma xim um Allo w a b le Amb ie nt Te mp e ra ture (°C )
7
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IRK.170, .230, .250 Series
Bulletin I27102 rev. A 10/97
130
120
110
100
90
130
IRK.230.. Se rie s
IRK.230.. Se rie s
R
(DC ) = 0.125 K/W
R
(DC ) = 0.125 K/W
thJC
thJC
120
110
100
90
C ond uctio n Pe rio d
Co nd uc tion Ang le
30°
30°
60°
60°
80
80
90°
90°
120°
180°
120°
70
70
180°
240
DC
60
60
0
50 100 150 200 250 300 350 400
Ave ra g e On -sta te C urre nt (A)
0
40
80
120
160
200
Ave ra g e On -sta te C urre nt (A)
Fig. 10 - Current Ratings Characteristics
Fig. 11 - Current Ratings Characteristics
350
300
250
200
150
100
50
500
450
400
350
300
250
200
150
100
50
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RMS Lim it
RMS Limit
C o nd uc tio n Ang le
Cond uc tion Pe rio d
IRK.230.. Se rie s
Pe r Junc tio n
IRK.230.. Se rie s
Pe r Junc tion
T = 130°C
T = 130°C
J
J
0
0
0
50
100
150
200
250
0
50 100 150 200 250 300 350 400
Ave ra g e O n-sta te C urre nt (A)
Ave ra g e O n-sta te Curre nt (A)
Fig. 12 - On-state Power Loss Characteristics
Fig. 13 - On-state Power Loss Characteristics
7000
6500
6000
5500
5000
4500
4000
3500
3000
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
Ma xim um No n Re p e titive Surg e C urren t
Ve rsus Pulse Tra in Dura tion. Control
Of Co nd uc tio n Ma y No t Be Ma inta ine d .
At Any Ra te d Loa d Cond itio n And With
Ra te d V
Ap p lie d Following Surg e .
RRM
Initia l T = 130°C
J
Initia l T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Vo lta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
IRK.230.. Se rie s
Pe r Junc tio n
IRK.230.. Se rie s
Pe r Junc tio n
1
10
100
0.01
0.1
1
Nu m b e r Of Eq u a l Am p litu d e Ha lf C yc le C u rre n t Pu lse s (N)
Pulse Tra in Dura tion (s)
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Maximum Non-Repetitive Surge Current
8
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IRK.170, .230, .250 Series
Bulletin I27102 rev. A 10/97
700
600
500
400
300
200
100
0
0
.
0
3
180°
120°
90°
60°
30°
K
/
0
W
.
1
2
K
/
0
W
.
1
6
K
/
W
C o nd uc tio n a ng le
0
0
.
2
5
K
/
W
.
3
K
/
W
IRK.230.. Se rie s
Pe r Mo d ule
T
= 130°C
J
0
0
0
100
200
300
400
50
0
20
40
60
80
100
120
To ta l RMS Outp ut C urre n t (A)
Ma xim um Allo wa b le Amb ie nt Te mp e ra ture (°C )
Fig. 16 - On-state Power Loss Characteristics
1500
1350
1200
1050
900
750
600
450
300
150
0
0
.
0
180°
(Sine )
180°
3
K
/
W
0
.
1
K
/
W
(Re c t)
0
.
1
6
K
/
W
0
.
2
K
/
W
1
.
5
K
/
W
2 x IRK.230.. Se ries
Sing le Pha se Brid g e
Con n ec te d
T
= 130°C
J
50 100 150 200 250 300 350 400 4
20
40
60
80
100
120
To ta l O utp ut Curre n t (A)
Ma xim um Allo wa b le Am b ie n t Te mp e ra ture (°C)
Fig. 17 - On-state Power Loss Characteristics
2000
1800
1600
1400
1200
1000
800
0
R
t
.
0
0
3
.
0
h
K
4
S
A
K
/
W
0
.
0
/
W
=
5
K
0
/
W
.
0
0
5
K
/
W
-
D
120°
(Rec t)
e
l
t
a
R
0
.
1
2
K
/
W
0
.1
6
K
/
W
600
3 x IRK.230.. Se rie s
Thre e Pha se Brid g e
Co n ne c te d
0
.
2
5
K
/
W
400
200
T = 130°C
J
0
100
To ta l O utp ut Curre n t (A)
Fig. 18 - On-state Power Loss Characteristics
200
300
400
500
6
00
20
40
60
80
100
120
Ma xim um Allo wa b le Am b ie n t Te mp e ra ture (°C)
9
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IRK.170, .230, .250 Series
Bulletin I27102 rev. A 10/97
130
130
120
110
100
90
IRK.250.. Se rie s
IRK.250.. Se rie s
R (DC) = 0.125 K/W
thJC
R
(DC ) = 0.125 K/W
thJC
120
110
100
90
C ond uc tion Ang le
Co nd uc tion Pe rio d
30°
30°
60°
90°
120°
180°
60°
80
80
90°
120°
180°
70
70
DC
60
60
0
50
100
150
200
250
300
0
100
200
300
400
500
Ave ra g e O n-sta te C urre nt (A)
Ave ra g e O n-sta te C urre nt (A)
Fig. 19 - Current Ratings Chartacteristics
Fig. 20 - Current Ratings Chartacteristics
500
450
400
350
300
250
200
150
100
50
350
300
250
200
150
100
50
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RMS Lim it
RMS Lim it
Co n d uc tio n An g le
Cond uc tion Pe rio d
IRK.250.. Se rie s
Pe r Junc tio n
IRK.250.. Se rie s
Pe r Junc tio n
T
= 130°C
T = 130°C
J
J
0
0
0
50 100 150 200 250 300 350 400
Ave ra g e O n-sta te C urre nt (A)
0
50
100
150
200
250
Ave ra g e On -sta te Curre nt (A)
Fig. 21 - On-state Power Loss Characteristics
Fig. 22 - On-state Power Loss Characteristics
7500
7000
6500
6000
5500
5000
4500
4000
3500
9000
8000
7000
6000
5000
4000
3000
At Any Ra te d Loa d Co nd ition And With
Ma ximu m No n Re p e titive Surg e C urren t
Ve rsus Pulse Tra in Dura tion. Control
Of Co nd uc tio n Ma y Not Be Ma inta ined .
Ra te d V
App lie d Follo wing Surg e .
RRM
In itia l T = 130°C
J
Initia l T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Vo lta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
IRK.250.. Se rie s
Pe r Junc tio n
IRK.250.. Se rie s
Pe r Junc tion
1
10
100
0.01
0.1
Pulse Tra in Dura tion (s)
1
Nu m b e r O f Eq u a l Amp litu d e Ha lf C yc le C u rre n t Pu lse s (N)
Fig. 23 - Maximum Non-Repetitive Surge Current
Fig. 24 - Maximum Non-Repetitive Surge Current
10
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IRK.170, .230, .250 Series
Bulletin I27102 rev. A 10/97
700
600
500
400
300
200
100
0
0
.
0
0
8
.
1
2
K
180°
120°
90°
60°
30°
/
K
W
/
W
0
.
.
1
6
K
/
W
W
0
0
Co n d u ctio n a ng le
2
0
K
/
.
2
5
K
/
W
IRK.250.. Se rie s
Pe r Mo d ule
T
= 130°C
J
0
0
0
100
200
300
400
500
60
0
20
40
60
80
100
120
To ta l RMS O utp ut C urre nt (A)
Ma xim um Allo wa b le Am b ie nt Te mp e ra ture (°C )
Fig. 25 - On-state Power Loss Characteristics
1400
1200
1000
800
600
400
200
0
R
=
0
.
01
K/
0
.
W
0
.
6
K
-
D
/
180°
(Sine )
180°
W
e
l
t
a
R
0
1
K
/
W
(Rec t)
0
.
1
6
K
/
W
2 x IRK.250.. Se ries
Sing le Ph a se Brid g e
Co nn ec te d
T
= 130°C
J
100
200
300
400
5
0
20
40
60
80
100
120
To ta l O utp ut Curren t (A)
Ma ximum Allo wa b le Am b ie nt Tem p era t ure (°C)
Fig. 26 - On-state Power Loss Characteristics
2000
1800
1600
1400
1200
1000
800
0
.
0
5
K
/
W
0
.
0
6
K
/
W
W
120°
(Re c t)
0
.
1
K
/
0.
0
12
K/
W
.
1
6
K
/
W
600
3 x IRK.250.. Se ries
Th re e Ph a se Brid g e
Co nn ec te d
400
200
T = 130°C
J
0
100 200 300 400 500 600 70
0
20
40
60
80
100
120
Ma xim um Allo wa b le Am b ie nt Tem p era t ure (°C)
To ta l Outp ut Curre n t (A)
Fig.27 - On-state Power Loss Characteristics
11
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IRK.170, .230, .250 Series
Bulletin I27102 rev. A 10/97
10000
10000
1000
100
1000
T = 25°C
T = 25°C
J
J
100
T = 125°C
T = 130°C
J
J
IRK.170.. Se rie s
Pe r Junc tio n
IRK.230.. Se rie s
Pe r Ju nc tio n
10
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.5
1
1.5
Insta nta n eo us O n-sta te Vo lta g e (V)
Fig. 29 - On-state Voltage Drop Characteristics
2
2.5
3
3.5
4
4.5
5
In sta nta ne o us On -sta te Vo lta g e (V)
Fig. 28 - On-state Voltage Drop Characteristics
10000
1000
T = 25°C
J
T = 130°C
J
IRK.250.. Se rie s
Pe r Junc tion
100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Insta n ta ne o us O n-sta te Vo lta g e (V)
Fig. 30 - On-state Voltage Drop Characteristics
1800
1600
1400
1200
1000
800
2400
IRK.230/ 250.. Se rie s
IRK.170.. Se rie s
= 130 °C
Pe r Jun c tio n
I
= 800 A
TM
I
= 800 A
500 A
2200
2000
1800
1600
1400
1200
1000
800
TM
T
= 130 °C
T
J
J
Pe r Jun c tio n
500 A
300 A
200 A
300 A
200 A
100 A
50 A
100 A
50 A
600
600
400
400
200
200
0
10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll Of On -sta te C urre nt - d i/ d t (A/ µs)
Ra te Of Fa ll Of O n-sta te C urre n t - d i/ d t (A/ µs)
Fig. 31 - Reverse Recovery Charge Characteristics
Fig. 32 - Reverse Recovery Charge Characteristics
12
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IRK.170, .230, .250 Series
Bulletin I27102 rev. A 10/97
100
10
1
Re c ta ngula r ga te p ulse
(1) PG M = 10W, tp = 4m s
(2) PG M = 20W, tp = 2m s
(3) PG M = 40W, tp = 1m s
(4) PG M = 60W, tp = 0.66ms
a ) Re c om m e nd e d loa d line fo r
ra te d di/ dt : 20V, 10ohm s; tr<=1 µs
b) Re c om m e nde d loa d line fo r
<=30% ra te d di/ d t : 10V, 20ohm s
tr<=1 µs
(a )
(b )
(1) (2) (3) (4)
VGD
IG D
IRK.170/ 230/ 250 Se rie s Fre q ue nc y Lim ite d by PG (AV)
0.1 10 100
0.1
0.001
0.01
1
Insta n ta ne ous Ga te C urre nt (A)
Fig. 33 - Gate Characteristics
1
Ste a d y Sta te Va lue :
R
R
= 0.17 K/ W
IRK.170.. Serie s
thJC
thJC
= 0.125 K/ W
(DC Op e ra tion)
0.1
IRK.230/ 250.. Se rie s
0.01
0.001
0.001
0.01
0.1
1
10
100
Sq ua re Wa ve Pulse Dura tion (s)
Fig. 34 - Thermal Impedance ZthJC Characteristics
13
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