IRKU/V71 [INFINEON]
THYRISTOR/ THYRISTOR; 晶闸管/晶闸管
| 型号： | IRKU/V71 |
| 厂家： | 
Infineon |
| 描述： | THYRISTOR/ THYRISTOR |
| 文件： | 总9页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27135 rev. F 10/02
IRKU/V71, 91 SERIES
THYRISTOR/ THYRISTOR
ADD-A-pakTM GEN V Power Modules
Features
Benefits
High Voltage
Up to 1600V
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
Full compatible TO-240AA
75 A
95 A
High Surge capability
Easy Mounting on heatsink
UL E78996 approved
Al203 DBC insulator
Heatsink grounded
3500VRMS isolating voltage
Mechanical Description
Theelectricalterminalsaresecuredagainstaxialpull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a solid
Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
Electrical Description
These modules are intended for general purpose high
voltageapplicationssuchashighvoltageregulatedpower
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Major Ratings and Characteristics
Parameters IRKU/V71 IRKU/V91 Units
IT(AV)@85°C
IT(RMS)
75
95
A
A
115
150
ITSM @50Hz
@60Hz
1665
1740
13.86
12.56
1785
1870
15.91
14.52
A
A
2
2
I t @50Hz
KA s
2
@60Hz
KA s
2
2
I √t
138.6
159.1
KA √s
VRRM range
TSTG
400to1600
V
- 40 to 125
- 40 to125
oC
oC
TJ
1
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IRKU/V71, 91 Series
Bulletin I27135 rev. F 10/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , maximum
repetitive
peak reverse voltage peak reverse voltage
VRSM , maximum
non-repetitive
VDRM , max. repetitive
peak off-state voltage,
gate open circuit
IRRM
IDRM
125°C
Voltage
Type number
Code
-
V
V
V
mA
04
400
500
400
IRKU/V71, 91
08
12
16
800
900
800
15
1200
1600
1300
1700
1200
1600
On-state Conduction
Parameters
IRKU/V71
75
IRKU/V91
Units
Conditions
IT(AV) Max.average on-state
current
95
180o conduction, half sine wave,
TC=85oC
A
IT(RMS Max.RMS on-state
115
150
DC
)
current
@TC
80
75
°C
ITSM
Max.peak,onecycle
non-repetitive on-state
current
1665
1740
1400
1470
1850
1940
13.86
12.56
9.80
1785
1870
1500
1570
2000
2100
15.91
14.52
11.25
10.27
20.00
18.30
159.1
0.80
t=10ms No voltage
Sinusoidal
half wave,
InitialTJ=TJ max.
t=8.3ms reapplied
t=10ms 100%VRRM
t=8.3ms reapplied
t=10ms TJ =25oC,
A
t=8.3ms no voltage reapplied
t=10ms No voltage
I2t
Max.I2tforfusing
t=8.3ms reapplied
InitialTJ =TJ max.
t=10ms 100%VRRM
KA2s
8.96
t=8.3ms reapplied
t=10ms TJ =25oC,
17.11
15.60
138.6
0.82
t=8.3ms no voltage reapplied
t=0.1 to 10ms, no voltage reapplied
I2√t
Max.I2√tforfusing (1)
KA2√s
VT(TO) Max.valueofthreshold
voltage (2)
Low level (3)
TJ = TJ max
V
0.85
0.85
High level (4)
r
Max.valueofon-state
slope resistance (2)
Max.peakon-state
3.00
2.40
Low level (3)
t
TJ = TJ max
mΩ
2.90
2.25
High level (4)
VTM
ITM=π xIT(AV)
TJ = 25°C
1.59
1.58
V
voltage
IFM=π xIF(AV)
di/dt Max.non-repetitive rate
of rise of turned on
TJ = 25oC, from 0.67 VDRM
TM =π x IT(AV), I = 500mA,
,
I
g
150
A/µs
mA
current
t < 0.5 µs, t > 6 µs
r p
TJ =25oC,anodesupply=6V,
IH
IL
Max. holding current
Max. latchingcurrent
200
400
resistive load, gate open circuit
TJ =25oC, anodesupply=6V,resistiveload
2
(1) I2t for time t = I2√t x √t .
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))
(4) I > π x IAV
x
x
(3) 16.7% x π x IAV < I < π x IAV
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2
IRKU/V71, 91 Series
Bulletin I27135 rev. F 10/02
Triggering
Parameters
IRKU/V71
IRKU/V91
Units
Conditions
PGM Max.peakgatepower
12
3.0
3.0
12
3.0
3.0
W
A
PG(AV) Max.averagegatepower
IGM
Max.peakgatecurrent
-VGM Max.peaknegative
gate voltage
10
4.0
2.5
1.7
TJ =-40°C
TJ =25°C
TJ =125°C
V
VGT Max.gatevoltage
required to trigger
Anodesupply=6V
resistive load
270
150
80
TJ =-40°C
TJ =25°C
IGT
Max.gatecurrent
required to trigger
Anodesupply=6V
resistive load
mA
TJ =125°C
TJ =125oC,
ratedVDRMapplied
VGD Max.gatevoltage
thatwillnottrigger
0.25
6
V
TJ =125oC,
ratedVDRMapplied
IGD
Max.gatecurrent
thatwillnottrigger
mA
Blocking
Parameters
IRKU/V71,91
15
Units
mA
Conditions
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
TJ = 125 oC, gate open circuit
2500 (1 min)
3500 (1 sec)
50 Hz, circuit to base, all terminals
shorted
VINS RMS isolation voltage
V
dv/dt Max. critical rate of rise
of off-state voltage (5)
TJ = 125oC, linear to 0.67 VDRM
gate open circuit
,
500
V/µs
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKU91/16AS90.
Thermal and Mechanical Specifications
Parameters
IRK.71
IRK.91
Units
°C
Conditions
TJ
T
Junction operating
temperature range
- 40 to 125
-40to125
Storage temper. range
stg
RthJC Max. internalthermal
resistance, junction
tocase
0.165
0.135
Permodule, DCoperation
K/W
RthCS Typicalthermalresistance
case to heatsink
Mounting surface flat, smooth and greased
0.1
5
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
T
Mounting torque ± 10%
to heatsink
Nm
busbar
3
wt
Approximateweight
110(4)
gr(oz)
Casestyle
TO-240AA
JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
Rect. wave conduction
Devices
Units
°C/W
180o
0.06
0.04
120o
0.07
0.05
90o
0.09
0.06
60o
0.12
0.08
30o
0.18
0.12
180o
0.04
0.03
120o
0.08
0.05
90o
0.10
0.06
60o
0.13
0.08
30o
0.18
0.12
IRKU/V71
IRKU/V91
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3
IRKU/V71, 91 Series
Bulletin I27135 rev. F 10/02
Ordering Information Table
Device Code
IRK.92 types
With no auxiliary cathode
IRK
U
91
/
16
A
S90
1
2
3
5
6
4
1
2
3
4
5
6
-
-
-
-
-
-
Module type
Circuit configuration (See Circuit Configuration table)
Current code * *
* * Available with no auxiliary cathode.
Voltage code (See Voltage Ratings table)
A : Gen V
To specify change:
91 to 92
71 to 72
e.g. : IRKU92/16A etc.
dv/dt code:
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Outline Table
Dimensions are in millimeters and [inches]
IRKU
IRKV
(1)
-
(1)
+
+
(2)
-
(2)
+
(3)
-
(3)
G1
(4) (5)
K1
K2 G2
(7) (6)
K1
(4) (5)
K2
(7) (6)
G1
G2
NOTE: To order the Optional Hardware see Bulletin I27900
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4
IRKU/V71, 91 Series
Bulletin I27135 rev. F 10/02
130
120
110
100
90
130
120
110
100
90
IRK.71.. Se rie s
IRK.71.. Se rie s
R thJC (DC) = 0.33 K/W
R
(DC) = 0.33 K/W
thJC
Cond uc tion Pe riod
Co nd uc tion Ang le
30°
30°
60°
60°
90°
120°
90°
80
80
180°
120°
DC
100
180°
80
70
70
0
20
40
60
120
0
10 20 30 40 50 60 70 80
Ave ra g e On-sta te Curre nt (A)
Ave ra g e On-sta te Curre nt (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
120
100
80
60
40
20
0
140
120
100
80
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RMS Lim it
RMS Lim it
60
Cond uc tio n Pe riod
Co nd uc tion Ang le
40
IRK.71.. Se rie s
Pe r Junc tio n
IRK.71.. Se rie s
Pe r Junc tion
20
T = 125°C
J
T = 125°C
J
0
0
10 20 30 40 50 60 70 80
Ave ra g e O n-sta te Curre nt (A)
0
20
40
60
80
100
120
Ave ra g e On-sta te Curre nt (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
1600
1500
1400
1300
1200
1100
1000
900
1800
1600
1400
1200
1000
800
Ma ximum Non Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tion. Control
Of Cond uc tio n Ma y Not Be Ma inta ine d .
At Any Ra te d Loa d Cond ition And With
Ra te d V
RRM
Ap p lie d Following Surg e .
Initia l T = 125°C
J
Initia l T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Volta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
IRK.71.. Se rie s
Pe r Junc tion
IRK.71.. Se rie s
Pe r Junc tion
800
700
600
0.01
1
10
100
0.1
Pulse Tra in Dura tio n (s)
1
Nu m b e r O f Eq ua l Am p litu d e Ha lf C yc le C u rre n t Pu lse s (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
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5
IRKU/V71, 91 Series
Bulletin I27135 rev. F 10/02
600
500
400
300
200
100
0
180°
(Sin e )
180°
(Re c t)
0
.
2
K
/
W
0
.
5
K
/
W
2 x IRK.71.. Se rie s
Sing le Pha se Brid g e
Co nne c te d
2
K
/
W
T
= 125°C
J
0
20 40 60 80 100 120 140 160 180 20
40
60
80 100 120 140
Tota l Outp ut C urre nt (A) Ma xim um Allo wa b le Am bie nt Te m p e ra ture (°C )
Fig. 7 - On-state Power Loss Characteristics (Single Phase Bridge IRKU+IRKV)
600
500
400
300
200
100
0
R
t
h
S
A
=
0
.
1
K
0
/
.
2
W
60°
(Re c t)
K
/
-
W
W
D
I
o
e
l
t
a
0
R
.
3
K
/
3 x IRK.71.. Se rie s
6-Pulse Mid p o int
C o nne c tio n Brid g e
T
= 125°C
J
0
50
100
150
200
250
300
20
40
60
80 100 120 140
Tota l O utp ut Curre nt (A)
Ma xim um Allowa b le Am b ie nt Te m p e ra ture (°C)
Fig. 8 - On-state Power Loss Characteristics
130
120
110
100
90
130
IRK.91.. Se rie s
IRK.91.. Se rie s
R
(DC) = 0.27 K/W
R
(DC) = 0.27 K/ W
thJC
thJC
120
110
Cond uc tion Ang le
C o nd uc tio n Pe rio d
100
90
30°
30°
60°
60°
90°
120°
90°
120°
80
80
80
180°
DC
180°
70
70
0
20
40
60
100
0
20 40 60 80 100 120 140 160
Ave ra g e On-sta te Curre nt (A)
Ave ra g e On-sta te Curre nt (A)
Fig. 9 - Current Ratings Characteristics
Fig. 10 - Current Ratings Characteristics
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6
IRKU/V71, 91 Series
Bulletin I27135 rev. F 10/02
140
120
100
80
180
160
140
120
100
80
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RMS Lim it
RMS Lim it
60
C o nd uc tio n Pe rio d
60
Cond uc tio n Ang le
40
IRK.91.. Se rie s
Pe r Junc tio n
IRK.91.. Se rie s
Pe r Junc tio n
40
20
20
T = 125°C
T = 125°C
J
J
0
0
0
20
40
60
80
100
0
20 40 60 80 100 120 140 160
Ave ra g e On-sta te Curre nt (A)
Ave ra g e On-sta te C urre nt (A)
Fig. 11 - On-state Power Loss Characteristics
Fig. 12 - On-state Power Loss Characteristics
1600
1500
1400
1300
1200
1100
1000
900
1800
1600
1400
1200
1000
800
At Any Ra te d Loa d Cond itio n And With
Ma xim um No n Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tion. Control
Of Cond uc tion Ma y Not Be Ma inta ine d .
Ra te d V
Ap p lie d Following Surg e .
RRM
Initia l T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initia l T = 125°C
J
No Volta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
IRK.91.. Se rie s
Pe r Junc tion
IRK.91.. Se rie s
Pe r Junc tion
800
700
600
0.01
1
10
100
0.1
Pulse Tra in Dura tio n (s)
1
Nu m b e r Of Eq u a l Am p litu d e Ha lf C yc le C u rre nt Pu lse s (N)
Fig. 13 - Maximum Non-Repetitive Surge Current
Fig. 14 - Maximum Non-Repetitive Surge Current
600
R
180°
(Sine )
180°
(Re c t)
500
400
300
200
100
0
=
0
.
1
K
/
W
-
D
e
l
t
a
R
0
.
3
K
/
W
W
0
1
.
5
K
/
2 x IRK.91.. Se rie s
Sing le Pha se Brid g e
Co nne c te d
K
/
W
T
= 125°C
J
0
40
80
120
160
200
20
40
60
80 100 120 140
Tota l Outp ut Curre nt (A)
Ma xim um Allowa b le Am b ie nt Te m p e ra ture (°C)
Fig. 15 - On-state Power Loss Characteristics (Single Phase Bridge IRKU+IRKV)
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7
IRKU/V71, 91 Series
Bulletin I27135 rev. F 10/02
700
600
500
400
300
200
100
0
R
=
0
.
1
K
60°
(Re c t)
/
W
-
0
I
D
.
o
2
e
K
l
/
t
W
a
R
0
.
3
K
/
W
3 x IRK.91.. Se rie s
6-Pulse Mid p o int
Co nne c tio n Brid g e
T
= 125°C
J
0
40 80 120 160 200 240 280 320 360
20
40
60
80 100 120 140
Tota l O utp ut C urre nt (A)
Ma xim um Allo wa b le Amb ie nt Te m p e ra ture (°C)
Fig. 16 - On-state Power Loss Characteristics
1000
100
10
1000
100
10
T = 25°C
J
T = 25°C
J
T = 125°C
J
T = 125°C
J
IRK.71.. Se rie s
Pe r Junc tio n
IRK.91.. Se rie s
Pe r Junc tion
1
1
0.5
1
1.5
2
2.5
3
3.5
4
0.5
1
1.5
2
2.5
3
3.5
Insta nta ne o us On-sta te Volta g e (V)
Insta nta ne ous O n-sta te Vo lta g e (V)
Fig. 17 - On-state Voltage Drop Characteristics
Fig. 18 - On-state Voltage Drop Characteristics
140
700
600
500
400
300
200
100
IRK.71.. Se rie s
IRK.91.. Se rie s
I
= 200 A
TM
I
= 200 A
100 A
IRK.71.. Se rie s
IRK.91.. Se rie s
TM
120
100
80
T
= 125 °C
100 A
J
T
= 125 °C
J
50 A
50 A
20 A
10 A
20 A
10 A
60
40
20
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll Of On-sta te Curre nt - d i/ dt (A/ µs)
Ra te Of Fa ll Of Fo rwa rd Curre nt - d i/ d t (A/ µs)
Fig. 19 - Recovery Charge Characteristics
Fig. 20 - Recovery Current Characteristics
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8
IRKU/V71, 91 Series
Bulletin I27135 rev. F 10/02
1
Ste a d y Sta te Va lue :
R
R
= 0.33 K/W
= 0.27 K/W
thJC
thJC
(DC Op e ra tio n)
IRK.71.. Se rie s
IRK.91.. Se rie s
0.1
Pe r Junc tio n
0.01
0.001
0.01
0.1
Sq ua re Wa ve Pulse Dura tio n (s)
1
10
Fig. 21 - Thermal Impedance ZthJC Characteristics
100
10
1
Re c ta ng ula r g a te p ulse
(1) PGM = 200 W, tp = 300 µs
a )Re c o m m e nd e d lo a d line for
ra te d d i/d t: 20 V, 20 o hm s
tr = 0.5 µs, tp >= 6 µs
b )Re c o mm e nd e d lo a d line fo r
<= 30% ra te d d i/d t: 15 V, 40 o hm s
tr = 1 µs, tp >= 6 µs
(2) PGM = 60 W, tp = 1 m s
(3) PGM = 30 W, tp = 2 m s
(4) PGM = 12 W, tp = 5 m s
(a )
(b )
(4) (3) (2)
(1)
VG D
IG D
IRK.71../ .91.. Se rie s Fre q ue nc y Limite d b y PG(AV)
0.1 10 100
0.1
0.001
0.01
1
1000
Insta nta ne o us Ga te Curre nt (A)
Fig. 22 - Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/02
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9
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