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IRL2310PBF [INFINEON]

Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB;
IRL2310PBF
型号： IRL2310PBF
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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PD - 9.1275  
PRELIMINARY  
IRL2310  
HEXFET® Power MOSFET  
Advanced Process Technology  
Ultra Low On-Resistance  
Dynamic dv/dt Rating  
Repetitive Avalanche Rated  
Logic-Level Gate Drive  
RDS(on) Specified at VGS= 4.5V & 10V  
175°C Operating Temperature  
VDSS = 100V  
RDS(on) = 0.040Ω  
ID = 40A  
Description  
Fourth Generation HEXFETs from International Rectifier utilize advanced  
processing techniques to achieve the lowest possible on resistance per  
silicon area. This benefit, combined with the fast switching speed and  
ruggedized device design for which HEXFET Power MOSFETs are well  
known, provides the designer with an extremely efficient device for use in a  
wide variety of application.  
The TO-220 package is universally preferred for all commercial-industrial  
applications at power dissipation levels to approximately 50 watts. The low  
thermal resistance and low package cost of the TO-220 contribute to its wide  
acceptance throughout the industry.  
Absolute Maximum Ratings  
Parameter  
Max.  
40  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, V GS @ 5.0V  
Continuous Drain Current, V GS @ 5.0V  
Pulsed Drain Current  
29  
A
160  
170  
1.1  
±20  
500  
24  
PD @TC = 25°C  
Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
17  
mJ  
V/ns  
5.5  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw.  
°C  
300 (1.6mm from case)  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Min.  
––––  
––––  
––––  
Typ.  
––––  
0.50  
Max.  
0.90  
––––  
62  
Units  
RθJC  
RθCS  
RθJA  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
°C/W  
––––  
Revision 1  
IRL2310  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
100 ––– –––  
––– 0.11 ––– V/°C Reference to 25°C, I D = 1mA  
Conditions  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
V
VGS = 0V, ID = 250µA  
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient  
––– ––– 0.040  
––– ––– 0.050  
1.0 ––– 2.0  
18 ––– –––  
––– ––– 25  
––– ––– 250  
––– ––– 100  
––– ––– -100  
––– ––– 160  
––– ––– 13  
––– ––– 45  
––– 6.6 –––  
––– 38 –––  
––– 140 –––  
––– 84 –––  
VGS = 10V, ID = 24A  
VGS = 4.5V, ID = 20A  
VDS = VGS, ID = 250µA  
VDS = 50V, ID = 24A  
VDS = 100V, VGS = 0V  
VDS = 80V, VGS = 0V, TJ = 150°C  
VGS = 20V  
Ω
RDS(ON)  
Static Drain-to-Source On-Resistance  
VGS(th)  
gfs  
Gate Threshold Voltage  
V
S
Forward Transconductance  
IDSS  
IGSS  
Drain-to-Source Leakage Current  
µA  
nA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
VGS = -20V  
Qg  
ID = 24A  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
nC  
ns  
VDS = 80V  
VGS = 10V, See Fig. 6 and 13  
VDD = 50V  
ID = 24A  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RG = 5.0Ω  
RD = 2.0Ω, See Fig. 10  
Between lead,  
LD  
LS  
Internal Drain Inductance  
Internal Source Inductance  
––– 4.5 –––  
––– 7.5 –––  
6mm (0.25in.)  
nH  
pF  
from package  
and center of die contact  
VGS = 0V  
Ciss  
Coss  
Crss  
Input Capacitance  
––– 3200 –––  
––– 610 –––  
––– 140 –––  
Output Capacitance  
VDS = 25V  
Reverse Transfer Capacitance  
ƒ = 1.0MHz, See Fig. 5  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
MOSFET symbol  
IS  
––– ––– 40  
showing the  
A
ISM  
Pulsed Source Current  
(Body Diode)  
integral reverse  
––– ––– 160  
p-n junction diode.  
TJ = 25°C, IS = 24A, VGS = 0V  
TJ = 25°C, IF = 24A  
di/dt = 100A/µs  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
Forward Turn-On Time  
––– ––– 1.6  
––– 180 270  
––– 0.98 1.5  
V
ns  
µC  
Qrr  
ton  
Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)  
Notes:  
Repetitive rating; pulse width limited by  
max. junction temperature. ( See fig. 11 )  
I
T
SD ≤ 24A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS  
J ≤ 175°C  
,
VDD = 25V, starting T J = 25°C, L = 540 µH  
RG = 25Ω, IAS = 24A. (See Figure 12)  
Pulse width ≤ 300µs; duty cycle ≤ 2%.  
IRL2310  
Peak Diode Recovery dv/dt Test Circuit  
Circuit Layout Considerations  
Low Stray Inductance  
• Ground Plane  
D.U.T  
•
•
Low Leakage Inductance  
Current Transformer  
RG  
•
dv/dt controlled by R G  
• Driver same type as D.U.T.  
• ISD controlled by Duty Factor "D"  
• D.U.T. - Device Under Test  
VDD  
*
* VGS = 5V for Logic Level Devices  
Fig 14. For N-Channel HEXFETS  
IRFL2310  
Package Outline  
TO-220AB Outline  
Dimensions are shown in millimeters (inches)  
10.54 (.415)  
10.29 (.405)  
- B -  
3.78 (.149)  
3.54 (.139)  
2.87 (.113)  
2.62 (.103)  
4.69 (.185)  
4.20 (.165)  
1.32 (.052)  
1.22 (.048)  
- A -  
6.47 (.255)  
6.10 (.240)  
4
15.24 (.600)  
14.84 (.584)  
1.15 (.045)  
MIN  
LEAD ASSIGNMENTS  
1 - GATE  
1
2
3
2 - DRAIN  
3 - SOURCE  
4 - DRAIN  
14.09 (.555)  
13.47 (.530)  
4.06 (.160)  
3.55 (.140)  
0.93 (.037)  
0.69 (.027)  
0.55 (.022)  
0.46 (.018)  
3X  
3X  
1.40 (.055)  
3X  
1.15 (.045)  
0.36 (.014)  
M
B A M  
2.92 (.115)  
2.64 (.104)  
2.54 (.100)  
2X  
NOTES:  
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.  
CONTROLLING DIMENSION : INCH  
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220-AB.  
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.  
Part Marking Information  
TO-220AB  
EXAMPLE : THIS IS AN IRF1010  
WITH ASSEMBLY  
A
INTERNATIONAL  
RECTIFIER  
LOGO  
PART NUMBER  
LOT CODE 9B1M  
IRF1010  
9246  
9B 1M  
DATE CODE  
(YYWW)  
ASSEMBLY  
LOT CODE  
YY = YEAR  
WW = WEEK  
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331  
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215  
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:  
Saalburgstrasse157, 61350BadHomburgTel:617237066 IRITALY:ViaLiguria49,10071Borgaro,TorinoTel:(39)1145  
10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR  
SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371  
Data and specifications subject to change without notice.  

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