IRL3103D1SPBF [INFINEON]

Power Field-Effect Transistor, 64A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3;
IRL3103D1SPBF
型号: IRL3103D1SPBF
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 64A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

文件: 总8页 (文件大小:302K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PD-95893  
IRL3103D1SPbF  
• Lead-Free  
www.irf.com  
1
04/25/06  
IRL3103D1SPbF  
2
www.irf.com  
IRl3103D1SPbF  
www.irf.com  
3
IRL3103D1SPbF  
4
www.irf.com  
IRl3103D1SPbF  
www.irf.com  
5
IRL3103D1SPbF  
D2Pak Package Outline  
Dimensions are shown in millimeters (inches)  
D2Pak Part Marking Information  
6
www.irf.com  
IRl3103D1SPbF  
D2Pak Tape & Reel Information  
Dimensions are shown in millimeters (inches)  
TRR  
1.60 (.063)  
1.50 (.059)  
1.60 (.063)  
1.50 (.059)  
4.10 (.161)  
3.90 (.153)  
0.368 (.0145)  
0.342 (.0135)  
FEED DIRECTION  
TRL  
11.60 (.457)  
11.40 (.449)  
1.85 (.073)  
1.65 (.065)  
24.30 (.957)  
23.90 (.941)  
15.42 (.609)  
15.22 (.601)  
1.75 (.069)  
1.25 (.049)  
10.90 (.429)  
10.70 (.421)  
4.72 (.136)  
4.52 (.178)  
16.10 (.634)  
15.90 (.626)  
FEED DIRECTION  
13.50 (.532)  
12.80 (.504)  
27.40 (1.079)  
23.90 (.941)  
4
330.00  
(14.173)  
MAX.  
60.00 (2.362)  
MIN.  
30.40 (1.197)  
MAX.  
NOTES :  
1. COMFORMS TO EIA-418.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION MEASURED @ HUB.  
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.  
26.40 (1.039)  
24.40 (.961)  
4
3
Data and specifications subject to change without notice.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information. 04/2006  
www.irf.com  
7
Note: For the most current drawings please refer to the IR website at:  
http://www.irf.com/package/  

相关型号:

IRL3103D1STRLP

MOSFET N-CH 30V 64A D2PAK
INFINEON

IRL3103D1STRLPBF

Power Field-Effect Transistor, 54A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
INFINEON

IRL3103D1STRR

Power Field-Effect Transistor, 54A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
INFINEON

IRL3103D1STRRPBF

Transistor,
INFINEON

IRL3103D2

FETKY⑩ MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=54A)
INFINEON

IRL3103D2PBF

FETKY MOSFET & SCHOTTKY RECTIFIER
INFINEON

IRL3103L

Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A)
INFINEON

IRL3103LPBF

HEXFET㈢ Power MOSFET
INFINEON

IRL3103PBF

Advanced Process Technology
INFINEON

IRL3103S

Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A)
INFINEON

IRL3103SPBF

HEXFET㈢ Power MOSFET
INFINEON

IRL3103STRL

Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
INFINEON