IRL3103D2 [INFINEON]
FETKY⑩ MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=54A); FETKY⑩ MOSFET和肖特基二极管（ VDSS = 30V ， RDS（ON） = 0.014ohm ，ID = 54A ）
| 型号： | IRL3103D2 |
| 厂家： | 
Infineon |
| 描述： | FETKY⑩ MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=54A) |
| 文件： | 总6页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD 9.1660
IRL3103D2
PRELIMINARY
FETKYTM MOSFET & SCHOTTKY RECTIFIER
®
D
l Copackaged HEXFET Power MOSFET
and Schottky Diode
VDSS = 30V
RDS(on) = 0.014Ω
ID = 54A
l Generation 5 Technology
l Logic Level Gate Drive
l Minimize Circuit Inductance
l Ideal For Synchronous Regulator Application
G
S
Description
The FETKY family of copackaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulator applications. A low on resistance Gen 5
MOSFET with a low forward voltage drop Schottky
diode and minimized component interconnect
inductance and resistance result in maximized
converter efficiencies.
The TO-220 package is universally preferred for all
commercial-industrialapplicationsatpowerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
54
34
A
220
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
2.0
W
W
Power Dissipation
70
Linear Derating Factor
0.56
W/°C
V
VGS
TJ
Gate-to-Source Voltage
± 16
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
300 (1.6mm from case )
10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
1.8
Units
RθJC
RθJA
Junction-to-Ambient
–––
62
°C/W
7/16/97
IRL3103D2
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.037 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.014
––– ––– 0.019
VGS = 10V, ID = 32A
VGS = 4.5V, ID = 27A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 34A
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 16V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
1.0
23
––– –––
––– –––
V
S
Forward Transconductance
––– ––– 0.25
––– ––– 35
––– ––– 100
––– ––– -100
––– ––– 44
––– ––– 14
––– ––– 24
mA
nA
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -16V
Qg
ID = 32A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 24V
VGS = 4.5V, See Fig. 6
–––
9.0 –––
VDD = 15V
––– 210 –––
ID = 34A
ns
nH
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
20 –––
54 –––
RG = 3.4Ω, VGS =4.5V
RD = 0.43 Ω,
Between lead,
6mm (0.25in.)
D
LD
Internal Drain Inductance
–––
–––
–––
–––
4.5
7.5
G
from package
LS
Internal Source Inductance
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Ciss
Input Capacitance
––– 2300 –––
––– 1100 –––
––– 310 –––
––– 3500 –––
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 0V
Body Diode & Schottky Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IF (AV)
ISM
( Schottky)
5.0
––– –––
––– –––
showing the
A
G
Pulsed Source Current
(Body Diode)
integral reverse
S
220
p-n junction and Schottky diode.
VSD1
VSD2
trr
Diode Forward Voltage
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– ––– 0.6
V
V
TJ = 25°C, IS = 32A, VGS = 0V
TJ = 25°C, IS = 3.0A, VGS = 0V
––– 51
––– 47
77
71
ns
TJ = 25°C, IF = 32A
Qrr
nC di/dt = 100A/µs
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRL3103 data and test conditions
IRL3103D2
1000
100
10
1000
100
10
VGS
15V
VGS
15V
12V
TOP
TOP
12V
10V
10V
8.0V
6.0V
4.0V
3.0V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
20µs PULSE W IDTH
20µs PULSE WIDTH
T
= 25°C
T
= 150°C
J
J
1
1
A
100
A
0.1
1
10
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
D S
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
30
20
10
0
30
VGS
TOP
10V
8.0V
6.0V
4.0V
2.0V
BOTTOM 0.0V
20
10
0
VGS
10V
8.0V
6.0V
4.0V
2.0V
TOP
0.0V
0.0V
BOTTOM 0.0V
20µs PULSE W IDTH
= 25°C
20µs PULSE W IDTH
T
T
= 150°C
C
C
A
A
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.2
0.4
0.6
0.8
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
D S
D S
Fig 4. Typical Reverse Output Characteristics
Fig 3. Typical Reverse Output Characteristics
IRL3103D2
15
12
9
5000
V
C
C
C
= 0V,
f = 1MHz
I = 32A
D
G S
iss
= C
= C
+ C
,
C
SHORTED
ds
gs
gd
V
V
= 24V
= 15V
DS
DS
rss
os s
gd
= C ds + C
gd
4000
3000
2000
1000
0
C
C
iss
oss
6
3
C
rss
0
A
0
20
40
60
80
1
10
100
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
60
50
40
30
20
10
0
TJ = 25°C
100
10
1
TJ = 150°C
VD S = 15V
20µs PULSE WIDTH
9.0A
25
50
T
75
100
125
°
150
2.0
3.0
4.0
5.0
6.0
7.0
8.0
, Case Temperature ( C)
VG S , Gate-to-Source Voltage (V)
C
Fig 8. Typical Transfer Characteristics
Fig 7. Maximum Drain Current Vs.
Case Temperature
IRL3103D2
2.0
1.5
1.0
0.5
0.0
54A
=
I
D
V
= 10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Junction Temperature ( C)
J
Fig 9. Normalized On-Resistance
Vs.Temperature
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
0.02
0.01
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
N otes:
1 . D uty factor D
=
t
/ t
2
1
2. Pea k T = P
x Z
+ T
C
D M
J
th JC
0.1
A
0.01
0.00001
0.0001
0.001
0.01
1
t1 , Rectangular Pulse Duration (sec)
Fig10. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
IRL3103D2
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B
-
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A
-
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
M IN
LEAD ASSIG NM ENTS
1
2
3
4
- GATE
1
2
3
- DRAIN
- SOU RC E
- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B
A
M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
N OTES:
1
2
D IM ENSIONING
&
TOLERANCING PER ANSI Y14.5M , 1982.
3
4
OUTLINE CONFORM S TO JEDEC OUTLINE TO-220AB.
HEATSINK LEAD M EASUREM ENTS DO NOT INCLU DE BURRS.
C ONTROLLING DIM ENSION : INCH
&
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IR F1010
A
W ITH ASSEM BLY
LOT C ODE 9B1M
INTERNATIONAL
PART NU M BER
RECTIFIER
IR F1010
LOGO
9246
9B
1M
D ATE COD E
ASSEMBLY
(YYW W )
LOT
CO DE
YY
=
YEAR
W W
= W EEK
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http://www.irf.com/
Data and specifications subject to change without notice.
6/97
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