IRL3202L [INFINEON]
Power Field-Effect Transistor, 48A I(D), 20V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB;型号: | IRL3202L |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 48A I(D), 20V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 局域网 开关 晶体管 |
文件: | 总8页 (文件大小:97K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD 9.1695A
IRL3202
PRELIMINARY
HEXFET® Power MOSFET
l Advanced Process Technology
D
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
VDSS = 20V
RDS(on) = 0.016W
G
Description
ID = 48A
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
S
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
48
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
30
A
190
69
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
0.56
± 10
14
VGS
Gate-to-Source Voltage
VGSM
Gate-to-Source Voltage
V
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
270
mJ
A
29
6.9
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
5.0
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RqJC
RqCS
RqJA
1.8
–––
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
11/18/97
IRL3202
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
20 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.019
––– ––– 0.016
0.70 ––– –––
VGS = 4.5V, ID = 29A
VGS = 7.0V, ID = 29A
VDS = VGS, ID = 250µA
VDS = 16V, ID = 29A
VDS = 20V, VGS = 0V
VDS = 10V, VGS = 0V, TJ = 150°C
VGS = 10V
RDS(on)
Static Drain-to-Source On-Resistance
W
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
28
––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 43
––– ––– 12
––– ––– 13
µA
nA
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -10V
Qg
ID = 29A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC
ns
VDS = 16V
VGS = 4.5V, See Fig. 6
VDD = 10V
–––
9.8 –––
RiseTime
––– 100 –––
ID = 29A
td(off)
tf
Turn-Off Delay Time
FallTime
–––
–––
63 –––
82 –––
RG = 9.5W,VGS = 4.5V
RD = 0.3W,
D
Between lead,
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 4.5 –––
––– 7.5 –––
6mm (0.25in.)
nH
pF
G
from package
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 2000 –––
––– 800 –––
––– 290 –––
Output Capacitance
VDS = 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFETsymbol
D
IS
48
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 190
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 68 100
––– 130 190
V
TJ = 25°C, IS = 29A, VGS = 0V
TJ = 25°C, IF = 29A
ns
nC
Qrr
ton
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
I £29A, di/dt £63A/µs, VDD £V(BR)DSS
,
SD
max. junction temperature.
TJ £150°C
Starting TJ = 25°C, L = 0.64mH
RG = 25W, IAS = 29A.
Pulse width £300µs; duty cycle £2%.
IRL3202
1000
100
10
1000
100
10
VGS
VGS
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
BOTTOM 2.00V
BOTTOM 2.00V
2.0V
2.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
48A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
100
10
1
°
T = 150 C
J
V
= 15V
20µs PULSE WIDTH
DS
V
=4.5V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
2
3
4 5
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
IRL3202
3500
15
12
9
V
GS
= 0V,
f = 1MHz
gd , ds
I
D
=
29A
C
= C + C
C
SHORTED
iss
gs
V
= 16V
DS
C
= C
gd
3000
2500
2000
1500
1000
500
rss
C
= C + C
ds
oss
gd
C
iss
6
C
oss
3
C
rss
0
0
1
10
100
0
10
20
30
40
50
60
70
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
°
T = 150 C
J
1ms
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1
0.2
1
0.8
1.4
2.0
2.6
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
IRL3202
600
500
400
300
200
100
0
50
40
30
20
10
0
I
D
TOP
13A
18A
BOTTOM 29A
25
50
T
75
100
125
°
150
25
50
75
100
125
150
°
, Case Temperature ( C)
Starting T , Junction Temperature( C)
C
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Maximum Avalanche Energy
CaseTemperature
Vs. DrainCurrent
10
D = 0.50
0.20
1
0.10
0.05
0.02
P
DM
0.1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
IRL3202
0.025
0.020
0.015
0.010
0.018
0.016
0.014
0.012
0.010
VGS = 4.5V
I
= 48A
D
VGS = 7.0V
A
0.0
2.0
4.0
6.0
8.0
0
10
20
30
40
50
60
I
, Drain Current (A)
D
V G S , Gate-to-Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
IRL3202
Package Outline
TO-220ABOutline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
-
B
-
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A
-
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
M IN
LEAD ASSIG NM ENTS
1
2
3
4
-
-
-
-
GATE
1
2
3
DR AIN
SOURCE
DR AIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B
A
M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMEN SIO NING
&
TOLERANCING PER ANSI Y14.5M , 1982.
3
4
O UTLINE CONFOR MS TO JEDEC OUTLIN E TO-220AB.
HEATSINK LE AD M EASUREM ENTS DO NO T INCLUDE BURRS.
CON TR OLLING DIM ENSION : INC H
&
Part Marking Information
TO-220AB
EXAM PLE : THIS IS AN IRF1010
W ITH ASSEM BLY
A
INTERNATIONAL
RECTIFIER
LO GO
PART NUM BER
LOT CO DE 9B1M
IRF1010
9246
9B
1M
DATE CODE
(YYW W )
ASSEMBLY
LOT
CO DE
YY
=
YEAR
= W EEK
W W
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
11/97
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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