IRL3202PBF [INFINEON]
HEXFET POWER MOSFET; HEXFET功率MOSFET
| 型号： | IRL3202PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET POWER MOSFET |
| 文件： | 总8页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95659
IRL3202PbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
D
VDSS = 20V
l Lead-Free
RDS(on) = 0.016Ω
G
Description
ID = 48A
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
S
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
48
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
30
A
190
69W
0.56
± 10
14
PD @TC = 25°C
Power Dissipation
Linear Derating Factor
W/°C
V
VGS
Gate-to-Source Voltage
VGSM
Gate-to-Source Voltage
V
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
270
29A
mJ
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
6.9mJ
5.0
V/ns
°C
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
300 (1.6mm from case )
10 lbfin (1.1Nm)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
Units
RθJC
RθCS
RθJA
1.8
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
°C/W
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1
7/30/04
IRL3202PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
20
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.029 V/°C
R
eference to 25°C, ID = 1mA
GS = 4.5V, ID = 29A
VGS = 7.0V, ID = 29A
VDS = VGS, ID = 250µA
VDS = 16V, ID = 29A
VDS = 20V, VGS = 0V
VDS = 10V, VGS = 0V, TJ = 150°C
VGS = 10V
0.019V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
0.016
0.70
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
28
25
250
100
-100
43
12
13
9.8
100
µA
nA
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -10V
Qg
ID = 29A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC VDS = 16V
VGS = 4.5V, See Fig. 6
VDD = 10V
RiseTime
ID = 29A
ns
td(off)
tf
Turn-Off Delay Time
FallTime
63
82
RG = 9.5Ω, VGS = 4.5V
RD = 0.3Ω,
D
Between lead,
6mm (0.25in.)
LD
LS
Internal Drain Inductance
Internal Source Inductance
4.5
7.5
nH
pF
G
from package
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
2000
800
290
Output Capacitance
VDS = 15V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFETsymbol
showing the
D
IS
48
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
190
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
1.3
68 100
130 190
V
TJ = 25°C, IS = 29A, VGS = 0V
ns
TJ = 25°C, IF = 29A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 29A, di/dt ≤ 63A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
max. junction temperature.
Starting TJ = 25°C, L = 0.64mH
RG = 25Ω, IAS = 29A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRL3202PbF
1000
100
10
1000
100
10
VGS
VGS
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM 2.00V
BOTTOM
BOTT175V
2.0V
2.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
48A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
100
10
1
°
T = 150 C
J
V
= 15V
20µs PULSE WIDTH
DS
V
= 4.5V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
2
3
4 5
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
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3
IRL3202PbF
3500
15
12
9
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
=
29A
GS
C
= C + C
iss
gs
gd ,
V
= 16V
DS
C
= C
3000
2500
2000
1500
1000
500
rss
gd
C
= C + C
gd
oss
ds
C
iss
6
C
C
oss
3
rss
0
0
1
10
100
0
10
20
30
40
50
60
70
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
°
T = 150 C
J
1ms
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1
0.2
1
0.8
1.4
2.0
2.6
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
4
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IRL3202PbF
600
500
400
300
200
100
0
50
40
30
20
10
0
I
D
TOP
13A
18A
BOTTOM 29A
25
50
75
100
125
150
25
50
75
100
125
150
°
°
T , Case Temperature ( C)
Starting T , Junction Temperature ( C)
C
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Maximum Avalanche Energy
CaseTemperature
Vs. Drain Current
10
D = 0.50
0.20
1
0.10
0.05
0.02
P
2
DM
0.1
0.01
t
1
SINGLE PULSE
0.01
t
2
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T =P
t / t
1
x Z
+ T
C
J
DM
thJC
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
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5
IRL3202PbF
0.025
0.020
0.015
0.010
0.018
0.016
0.014
0.012
0.010
VGS = 4.5V
I
D
= 48A
VGS = 7.0V
A
0.0
2.0
4.0
6.0
8.0
0
10
20
30
40
50
60
I
, Drain Current (A)
D
VGS , Gate-to-Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
6
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IRL3202PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
4
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
ASSEMBLED O N WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DAT E CODE
YEAR 7 = 1997
WEE K 19
AS S E MBLY
LO T CODE
LINE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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