IRL3302-017 [INFINEON]
Power Field-Effect Transistor, 39A I(D), 20V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB;
| 型号： | IRL3302-017 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 39A I(D), 20V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 局域网 开关 晶体管 |
| 文件： | 总8页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD 9.1696A
IRL3302
PRELIMINARY
HEXFET® Power MOSFET
l Advanced Process Technology
l Optimized for 4.5V Gate Drive
l Ideal for CPU Core DC-DC Converters
l 150°C Operating Temperature
l Fast Switching
D
VDSS = 20V
RDS(on) = 0.020W
G
Description
ID = 39A
S
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum cost.
The TO-220 package is universally preferred for all
commercial-industrialapplicationsatpowerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
39
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
25
A
160
57
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
0.45
± 10
14
VGS
Gate-to-Source Voltage
VGSM
Gate-to-Source Voltage
V
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
130
mJ
A
23
5.7
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
V/ns
5.0
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RqJC
RqCS
RqJA
2.2
–––
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
11/18/97
IRL3302
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
20 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.023
––– ––– 0.020
0.70 ––– –––
VGS = 4.5V, ID = 23A
VGS = 7.0V, ID = 23A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 23A
RDS(on)
Static Drain-to-Source On-Resistance
W
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
21
––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 31
––– ––– 5.7
––– ––– 13
VDS = 20V, VGS = 0V
µA
nA
IDSS
Drain-to-Source Leakage Current
VDS = 10V, VGS = 0V, TJ = 150°C
VGS = 10V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -10V
Qg
ID = 23A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 16V
VGS = 4.5V, See Fig. 6
–––
7.2 –––
VDD = 10V
––– 110 –––
ID = 23A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
41 –––
89 –––
RG = 9.5W, VGS = 4.5V
RD = 2.4W,
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 4.5 –––
––– 7.5 –––
nH
pF
G
S
Ciss
Coss
Crss
Input Capacitance
––– 1300 –––
––– 520 –––
––– 190 –––
Output Capacitance
VDS = 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
39
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 160
––– ––– 1.3
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
V
TJ = 25°C, IS = 23A, VGS = 0V
––– 62
––– 110 160
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
94
ns
TJ = 25°C, IF = 23A
Qrr
ton
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
I £23A, di/dt £97A/µs, VDD £V(BR)DSS
,
SD
max. junction temperature.
TJ £150°C
Starting TJ = 25°C, L = 0.49mH
RG = 25W, IAS = 23A.
Pulse width £300µs; duty cycle £2%.
IRL3302
1000
100
10
1000
100
10
VGS
VGS
TOP
10V
TOP
10V
8.0V
8.0V
6.0V
6.0V
4.0V
4.0V
3.0V
3.0V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1000
39A
=
I
D
°
T = 25 C
1.5
1.0
0.5
0.0
J
100
10
1
°
T = 150 C
J
V
= 15V
DS
V
=4.5V
20µs PULSE WIDTH
GS
2
3
4
5
6
7
8
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL3302
2400
15
12
9
V
= 0V,
f = 1MHz
C
I
D
=
23A
GS
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
C
= C
gd
rss
2000
1600
1200
800
400
0
C
= C + C
V
= 16V
oss
ds
DS
C
iss
6
C
oss
rss
3
C
0
1
10
100
0
10
20
30
40
50
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100
10
1
°
T = 150 C
J
100us
1ms
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1
0.5
1.0
1.5
2.0
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
IRL3302
40
30
20
10
0
300
250
200
150
100
50
I
D
TOP
10A
15A
BOTTOM 23A
0
25
50
T
75
100
125
150
25
50
75
100
125
150
°
, Case Temperature ( C)
°
C
Starting T , Junction Temperature( C)
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Maximum Avalanche Energy
Case Temperature
Vs. Drain Current
10
D = 0.50
0.20
1
0.10
0.05
P
DM
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL3302
0.020
0.019
0.018
0.017
0.016
0.015
0.014
0.022
0.021
0.020
0.019
0.018
0.017
0.016
VGS = 4.5V
I
= 39A
D
VGS = 7.0V
A
0
10
20
30
40
4
5
6
7
8
9
10
I
, Drain Current (A)
D
V G S , Gate-to-Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
IRL3302
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
-
B
-
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A
-
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
M IN
LEAD ASSIG NM ENTS
1
2
3
4
-
-
-
-
GATE
1
2
3
DR AIN
SOURCE
DR AIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B
A
M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMEN SIO NING
&
TOLERANCING PER ANSI Y14.5M , 1982.
3
4
O UTLINE CONFOR MS TO JEDEC OUTLIN E TO-220AB.
HEATSINK LE AD M EASUREM ENTS DO NO T INCLUDE BURRS.
CON TR OLLING DIM ENSION : INC H
&
Part Marking Information
TO-220AB
EXAM PLE : THIS IS AN IRF1010
W ITH ASSEM BLY
A
INTERNATIONAL
RECTIFIER
LO GO
PART NUM BER
LOT CO DE 9B1M
IRF1010
9246
9B
1M
DATE CODE
(YYW W )
ASSEMBLY
LOT
CO DE
YY
=
YEAR
= W EEK
W W
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
11/97
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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