IRL3302PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRL3302PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95660
IRL3302PbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Optimized for 4.5V Gate Drive
l Ideal for CPU Core DC-DC Converters
l 150°C Operating Temperature
l Fast Switching
D
VDSS = 20V
RDS(on) = 0.020Ω
l Lead-Free
G
Description
ID = 39A
S
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum cost.
The TO-220 package is universally preferred for all
commercial-industrialapplicationsatpowerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
39
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
25
A
160
57
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
0.45
± 10
14
VGS
Gate-to-Source Voltage
VGSM
Gate-to-Source Voltage
V
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
130
mJ
A
23
5.7
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
V/ns
5.0
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbfin (1.1Nm)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
Units
RθJC
RθCS
RθJA
2.2
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
°C/W
7/30/04
IRL3302PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
20
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.022 V/°C Reference to 25°C, ID = 1mA
0.023
0.020
0.70
VGS = 4.5V, ID = 23A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS = 7.0V, ID = 23A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 23A
VDS = 20V, VGS = 0V
VDS = 10V, VGS = 0V, TJ = 150°C
VGS = 10V
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
21
25
250
100
-100
31
5.7
13
µA
nA
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -10V
Qg
ID = 23A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 16V
VGS = 4.5V, See Fig. 6
7.2
VDD = 10V
110
ID = 23A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
41
89
RG = 9.5Ω, VGS = 4.5V
RD = 2.4Ω,
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
4.5
7.5
nH
pF
G
S
Ciss
Coss
Crss
Input Capacitance
1300
520
190
Output Capacitance
VDS = 15V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
39
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
160
1.3
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
V
TJ = 25°C, IS = 23A, VGS = 0V
TJ = 25°C, IF = 23A
62
94
ns
nC
Qrr
ton
110 160
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 23A, di/dt ≤ 97A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
max. junction temperature.
Starting TJ = 25°C, L = 0.49mH
RG = 25Ω, IAS = 23A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
IRL3302PbF
1000
100
10
1000
100
10
VGS
VGS
TOP
10V
TOP
10V
8.0V
8.0V
6.0V
6.0V
4.0V
4.0V
3.0V
3.0V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1000
39A
=
I
D
°
T = 25 C
1.5
1.0
0.5
0.0
J
100
10
1
°
T = 150 C
J
V
= 15V
DS
V
=4.5V
20µs PULSE WIDTH
GS
2
3
4
5
6
7
8
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL3302PbF
2400
15
12
9
V
= 0V,
f = 1MHz
gd , ds
I
D
=
23A
GS
C
= C + C
C
SHORTED
iss
gs
C
= C
gd
rss
2000
1600
1200
800
400
0
C
= C + C
ds
V
= 16V
oss
gd
DS
C
iss
6
C
oss
3
C
rss
0
1
10
100
0
10
20
30
40
50
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100
10
1
°
T = 150 C
J
100us
1ms
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1
0.5
1.0
1.5
2.0
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
IRL3302PbF
40
30
20
10
0
300
250
200
150
100
50
I
D
TOP
10A
15A
BOTTOM 23A
0
25
50
75
100
125
°
150
25
50
75
100
125
150
T , Case Temperature ( C)
°
C
Starting T , Junction Temperature ( C)
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Maximum Avalanche Energy
Case Temperature
Vs. Drain Current
10
D = 0.50
0.20
1
0.10
0.05
P
2
DM
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL3302PbF
0.020
0.019
0.018
0.017
0.016
0.015
0.014
0.022
VGS = 4.5V
0.021
0.020
0.019
0.018
0.017
0.016
I
= 39A
D
VGS = 7.0V
A
0
10
20
30
40
4
5
6
7
8
9
10
I
, Drain Current (A)
D
VGS , Gate-to-Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
IRL3302PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
1
2
3
1- GATE
1- GATE
2- DRAIN
2- COLLECTOR
3- EMITTER
4- COLLECTOR
3- SOURCE
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
4
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
ASSEMBLED ON WW 19, 1997
IN THE AS SEMBLY LINE "C"
INTE RNAT IONAL
RECTIFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DATE CODE
YEAR 7 = 1997
WEEK 19
ASSEMBLY
LO T CODE
LINE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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