IRL3705ZSTRL [INFINEON]
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3;
| 型号： | IRL3705ZSTRL |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网 |
| 文件： | 总8页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1370C
IRL3705N
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 55V
RDS(on) = 0.01Ω
G
l Fully Avalanche Rated
ID=89Aꢀ
S
Description
FifthGenerationHEXFETsfromInternationalRectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrialapplicationsatpowerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter
Max.
89ꢀ
63
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
310
PD @TC = 25°C
Power Dissipation
170
W
W/°C
V
Linear Derating Factor
1.1
VGS
EAS
IAR
Gate-to-Source Voltage
± 16
340
Single Pulse Avalanche Energy
Avalanche Current
mJ
46
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
17
mJ
5.0
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
RθCS
RθJA
0.90
–––
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
8/25/97
IRL3705N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.010
––– ––– 0.012
––– ––– 0.018
VGS = 10V, ID = 46A
VGS = 5.0V, ID = 46A
VGS = 4.0V, ID = 39A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 46A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 16V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
1.0
50
––– 2.0
––– –––
V
S
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 98
––– ––– 19
––– ––– 49
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -16V
Qg
ID = 46A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 5.0V, See Fig. 6 and 13
–––
12 –––
VDD = 28V
––– 140 –––
ID = 46A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
37 –––
78 –––
RG = 1.8Ω, VGS = 5.0V
RD = 0.59Ω, See Fig. 10
Between lead,
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
4.5
–––
nH
6mm (0.25in.)
G
from package
––– 7.5 –––
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 3600 –––
––– 870 –––
––– 320 –––
Output Capacitance
pF
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– –––
––– –––
89ꢀ
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
310
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 94 140
––– 290 440
V
TJ = 25°C, IS = 46A, VGS = 0V
ns
TJ = 25°C, IF = 46A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 46A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Calculated continuous current based on maximum allowable
VDD = 25V, starting TJ = 25°C, L = 320µH
RG = 25Ω, IAS = 46A. (See Figure 12)
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
IRL3705N
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
12V
12V
10V
10V
8.0V
6.0V
4.0V
3.0V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.5V
BOTT OM 2.5V
2.5V
2.5V
20µs PULSE W IDTH
20µs PULSE W IDTH
T
= 25°C
T
= 175°C
J
J
1
1
A
A
0.1
1
10
100
0.1
1
10
100
VD S , Drain-to-Source Voltage (V)
VD S , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1 0 0 0
1 0 0
1 0
3. 0
2. 5
2. 0
1. 5
1. 0
0. 5
0. 0
I
= 77A
D
T
= 25°C
J
T
= 175°C
J
V
= 25V
DS
20µs P ULS E W IDTH
V
= 10V
GS
1
8. 0 A
A
2. 0
3. 0
4. 0
5. 0
6. 0
7. 0
- 6 0 - 4 0 - 2 0
0
2 0
4 0
6 0
8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
TJ , Junction Temperature (°C)
VG S , Ga te-to-So urce Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL3705N
15
12
9
6000
I
= 46A
V
C
C
C
= 0V ,
f = 1MHz
D
GS
iss
= C
= C
= C
+ C
+ C
,
C
SHORTED
gs
g d
ds
gd
ds
V
V
= 44V
= 28V
DS
DS
rss
oss
5000
4000
3000
2000
1000
0
C
is s
gd
C
C
o s s
rs s
6
3
FOR TES T CIRCUIT
SEE FIGURE 13
0
A
A
0
20
40
60
80
100
120
140
1
10
100
VD S , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1 0 0 0
1000
100
10
OPE RATION IN THIS A RE A LIMITE D
BY R
D S(o n)
10µs
100µs
1 0 0
T
= 175°C
J
1 ms
T
= 25°C
J
10m s
T
T
= 25°C
= 175°C
C
J
V
= 0V
S ingle Pulse
GS
1 0
A
1
A
0. 4
0. 8
1. 2
1. 6
2. 0
2. 4
2. 8
1
10
100
V
, Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRL3705N
100
80
60
40
20
0
RD
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.05
0.1
P
DM
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL3705N
800
600
400
200
0
I
D
TOP
19A
33A
15 V
BOTTOM 46A
D R IV ER
L
V
D S
D .U .T
A S
R
+
G
V
D D
-
I
A
10V
0 .0 1
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
= 25V
50
D D
A
175
25
75
100
125
150
Starting TJ , Junction Temperature (°C)
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
5.0 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRL3705N
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRL3705N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
1 0.5 4 (.41 5)
1 0.2 9 (.40 5)
-
B
-
3.78 (.14 9)
3.54 (.13 9)
2 .87 ( .1 13 )
2 .62 ( .1 03 )
4 .69 ( .1 85 )
4 .20 ( .1 65 )
1 .3 2 (.0 52 )
1 .2 2 (.0 48 )
-
A
-
6.4 7 (.25 5)
6.1 0 (.24 0)
4
1 5.24 ( .6 0 0)
1 4.84 ( .5 8 4)
1.15 ( .0 4 5)
L E A D
A
S
S
IG N M E N T S
M IN
1
2
3
4
-
-
-
-
G A T E
1
2
3
D R A IN
U R C E
D R A IN
S
O
1 4.09 (.5 5 5)
1 3.47 (.5 3 0)
4.0 6 (.16 0)
3.5 5 (.14 0)
0 .93 ( .0 37 )
0 .69 ( .0 27 )
0.5 5 (.02 2)
0.4 6 (.01 8)
3X
3X
1 .4 0 (.05 5 )
1 .1 5 (.04 5 )
3 X
0 .3 6 (.01 4)
M
B
A
M
2 .9 2 (.11 5 )
2 .6 4 (.10 4 )
2 .54 ( .1 00 )
2X
N O T E
S :
1
2
D IM E N S IO N IN G
C O N T R O L LIN G
&
T O L E R A N C IN G
P
E R
A
N S
I
Y
14 .5 M , 1 98 2.
3
O
U T L IN E C O N F O R M S T O J E D E
C
O U T LIN E T O -2 20 A B .
N O IN C L U D E B U R R S .
D
IM E N S IO IN C H
N
:
4
H E A T S IN L E A D E A U R E M E N T S
K
&
M
S
D
O
T
Part Marking Information
TO-220AB
EXAM PLE : THIS IS AN IRF1010
A
W ITH ASSEMBLY
INTERNATIONAL
PART NUM BER
LOT CODE 9B1M
RECTIFIER
IRF1010
LOGO
9246
1M
9B
DATE CODE
ASSEM BLY
(YYW W )
LOT CODE
YY = YEAR
=
W W W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
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