IRL40DM247 [INFINEON]
OptiMOS™ 5 MOSFET devices are optimized for low RDS(on) and high switching frequencies for applications requiring high power density. The DirectFETTM package offers maximum power density, reduced parasitics, minimum conduction losses in a low profile with excellent reliability.;
| 型号： | IRL40DM247 |
| 厂家： | 
Infineon |
| 描述： | OptiMOS™ 5 MOSFET devices are optimized for low RDS(on) and high switching frequencies for applications requiring high power density. The DirectFETTM package offers maximum power density, reduced parasitics, minimum conduction losses in a low profile with excellent reliability. |
| 文件： | 总14页 (文件大小：5073K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRL40DM247
MOSFET
DirectFETꢀME
OptiMOSª5,ꢀ40ꢀV
Features
Application
•ꢀBrushedꢀMotorꢀdriveꢀapplications
•ꢀBLDCꢀMotorꢀdriveꢀapplications
•ꢀBatteryꢀpoweredꢀcircuits
•ꢀHalf-bridgeꢀandꢀfull-bridgeꢀtopologies
•ꢀSynchronousꢀrectifierꢀapplications
•ꢀResonantꢀmodeꢀpowerꢀsupplies
•ꢀOR-ingꢀandꢀredundantꢀpowerꢀswitches
•ꢀDC/DCꢀandꢀAC/DCꢀconverters
•ꢀDC/ACꢀInverters
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
VDS
40
V
Rds(on),ꢀmax
Id
0.82
211
104
61
mΩ
A
Qoss
nC
nC
Qg(0V..4.5V)
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
MG-WDSON-8-904
(ME)
IRL40DM247
M247
-
Final Data Sheet
1
Rev.ꢀ2.5,ꢀꢀ2022-08-30
OptiMOSª5,ꢀ40ꢀV
IRL40DM247
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.ꢀ2.5,ꢀꢀ2022-08-30
OptiMOSª5,ꢀ40ꢀV
IRL40DM247
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
-
-
-
-
-
-
211
132
44
Continuous drain current
ID
A
VGS=10ꢀV,ꢀTA=25ꢀ°Cꢀ(siliconꢀlimited),
RTHJA=45ꢀ°C/W1)
Pulsed drain current2)
Avalanche energy, single pulse3)
ID,pulse
EAS
-
-
-
-
844
85
A
TC=25ꢀ°C
-
mJ
V
ID=50ꢀA,ꢀRGS=50ꢀΩ
Gate source voltage
VGS
-20
20
-
-
-
-
-
63
2.8
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRTHJA=45ꢀ°C/W1)
Operating and storage temperature
Tj,ꢀTstg
-40
-
150
°C
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
RthJC
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
-
2
°C/W -
°C/W -
Thermal resistance, junction - Ambient,
double sided cooling
4)
RthJA
-
12.5
-
Thermal resistance, junction - Ambient,
mounted on minimum foot print
5)
1)
RthJA
-
-
-
20
-
-
°C/W -
°C/W -
°C/W -
Thermal resistance, junction - Ambient RthJA
45
-
Device on PCB,
junction-to-pcb mounted
RthJ-PCB
Tsold
0.75
Soldering temperature, wave and
reflow soldering are allowed
-
-
260
°C
reflow MSL3
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See Diagram 3 for more detailed information
3) See Diagram 13 for more detailed information
4) Used double sided cooling, mounting pad with large heat sink
5) Mouted on minimum footprint full size board with metalized back with small clip heat sink
Final Data Sheet
3
Rev.ꢀ2.5,ꢀꢀ2022-08-30
OptiMOSª5,ꢀ40ꢀV
IRL40DM247
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
V(BR)DSS
Unit Noteꢀ/ꢀTestꢀCondition
VGS=0ꢀV,ꢀID=1ꢀmA
mV/°CID=1ꢀmA,ꢀreferencedꢀtoꢀ25ꢀ°C
Min.
Max.
Drain-source breakdown voltage
40
-
V
Breakdown voltage temperature
coefficient
dV(BR)DSSꢀ/dTj -
31
-
Gate threshold voltage
VGS(th)
IDSS
1.2
1.6
2
V
VDS=VGS,ꢀID=250ꢀµA
Zero gate voltage drain current
Gate-source leakage current
-
-
-
-
1
µA
nA
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VGS=20ꢀV,ꢀVDS=0ꢀV
IGSS
100
-
-
0.62
0.79
0.82
1.3
VGS=10ꢀV,ꢀID=50ꢀA
VGS=4.5ꢀV,ꢀID=50ꢀA
Drain-source on-state resistance
RDS(on)
mΩ
Gate resistance1)
Transconductance
RG
gfs
-
-
1.2
-
-
Ω
-
310
S
|VDS|≥2|ID|RDS(on)max,ꢀID=50ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
8400
2400
190
-
-
-
pF
pF
pF
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
VDD=20ꢀV,ꢀVGS=4.5ꢀV,ꢀID=50ꢀA,
RG,ext=1.8ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
25
71
49
50
-
-
-
-
ns
ns
ns
ns
VDD=20ꢀV,ꢀVGS=4.5ꢀV,ꢀID=50ꢀA,
RG,ext=1.8ꢀΩ
VDD=20ꢀV,ꢀVGS=4.5ꢀV,ꢀID=50ꢀA,
RG,ext=1.8ꢀΩ
Turn-off delay time
Fall time
VDD=20ꢀV,ꢀVGS=4.5ꢀV,ꢀID=50ꢀA,
RG,ext=1.8ꢀΩ
1) Defined by design. Not subject to production test.
Final Data Sheet
4
Rev.ꢀ2.5,ꢀꢀ2022-08-30
OptiMOSª5,ꢀ40ꢀV
IRL40DM247
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ
Values
Typ.
20
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge2)
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
13
-
19
-
Qsw
25
-
Gate charge total2)
Qg
61
85
Gate plateau voltage
Gate charge total
Vplateau
Qg
2.3
118
99
-
165
nC
nC
nC
Gate charge total, sync. FET
Output charge1)
Qg(sync)
Qoss
-
-
104
VDD=20ꢀV,ꢀVGS=0ꢀV
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
-
63
844
1
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
-
V
VGS=0ꢀV,ꢀIF=50ꢀA,ꢀTj=25ꢀ°C
VR=20ꢀV,ꢀIF=50ꢀA,ꢀdiF/dt=100ꢀA/µs
VR=20ꢀV,ꢀIF=50ꢀA,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time2)
Reverse recovery charge2)
53
56
-
ns
nC
Qrr
-
1) See ″Gate charge waveforms″ for parameter definition
2) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.5,ꢀꢀ2022-08-30
OptiMOSª5,ꢀ40ꢀV
IRL40DM247
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
70
240
60
50
40
30
20
10
0
200
160
120
80
40
0
0
25
50
75
100
125
150
25
50
75
100
125
150
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
104
101
single pulse
0.01
0.02
0.05
0.1
0.2
103
102
101
100
10-1
10-2
1 µs
10 µs
0.5
100
10-1
10-2
100 µs
1 ms
10 ms
DC
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.5,ꢀꢀ2022-08-30
OptiMOSª5,ꢀ40ꢀV
IRL40DM247
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
850
2.2
2.5 V
2.8 V
3 V
3.5 V
4 V
4.5 V
5 V
6 V
765
680
595
510
425
340
255
170
85
2.0
2.8 V
1.8
10 V
1.6
1.4
1.2
1.0
0.8
0.6
3 V
3.3 V
3.5 V
4 V
4.5 V
5 V
10 V
0
0.0
1.0
2.0
3.0
4.0
5.0
0
50
100
150
200
250
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
850
2.4
765
680
595
510
425
340
255
170
2.0
1.6
125 °C
1.2
25 °C
25 °C
0.8
85
150 °C
0
0.4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2
4
6
8
10
12
14
16
18
20
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=50ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.5,ꢀꢀ2022-08-30
OptiMOSª5,ꢀ40ꢀV
IRL40DM247
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.00
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
2500 µA
1.75
1.50
250 µA
1.25
1.00
0.75
0.50
-60 -40 -20
0
20 40 60 80 100 120 140 160
-60 -40 -20
0
20 40 60 80 100 120 140 160
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=50ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
105
25 °C
150 °C
103
102
101
100
104
103
102
101
Ciss
Coss
Crss
0
5
10
15
20
25
30
35
40
0.25
0.50
0.75
1.00
1.25
1.50
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.5,ꢀꢀ2022-08-30
OptiMOSª5,ꢀ40ꢀV
IRL40DM247
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
14
8 V
20 V
32 V
102
12
10
8
25 °C
101
100 °C
6
100
4
125 °C
2
10-1
0
10-1
100
101
102
103
104
0
25
50
75
100
125
150
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=50ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
49
48
47
46
45
44
43
42
41
-60 -40 -20
0
20 40 60 80 100 120 140 160
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.5,ꢀꢀ2022-08-30
OptiMOSª5,ꢀ40ꢀV
IRL40DM247
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀRth/Zthꢀmeasurementꢀdiagramsꢀ
6) Mounted on minimum footprint full size board with metalized
back and with small clip heatsink (still air)
2) Surface mounted on 1 in. square Cu
board (still air).
Final Data Sheet
10
Rev.ꢀ2.5,ꢀꢀ2022-08-30
OptiMOSª5,ꢀ40ꢀV
IRL40DM247
6ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀTapeꢀ(MG-WDSON-8-904ꢀ(ME),ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
11
Rev.ꢀ2.5,ꢀꢀ2022-08-30
OptiMOSª5,ꢀ40ꢀV
IRL40DM247
PCB Footprint
STENCIL Footprint
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀBoardpadꢀ(MG-WDSON-8-904ꢀ(ME),ꢀdimensionsꢀinꢀmm
Final Data Sheet
12
Rev.ꢀ2.5,ꢀꢀ2022-08-30
OptiMOSª5,ꢀ40ꢀV
IRL40DM247
DOCUMENT NO.
Z8B00188582
MILLIMETERS
MIN.
DIMENSION
MAX.
6.35
5.05
3.95
0.45
0.97
1.12
0.62
1.32
0.42
0.62
0.97
0.70
2.17
3.72
0.17
0.10
REVISION
A
B
C
D
E
F
6.25
4.80
3.85
0.35
0.93
1.08
0.58
1.28
0.38
0.58
0.83
-
01
SCALE 10:1
0
1
2mm
G
H
J
EUROPEAN PROJECTION
K
L
M
N
O
P
R
2.03
3.58
0.08
0.00
ISSUE DATE
17.04.2018
Figureꢀ3ꢀꢀꢀꢀꢀOutlineꢀMG-WDSON-8-904ꢀ(ME),ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
13
Rev.ꢀ2.5,ꢀꢀ2022-08-30
OptiMOSª5,ꢀ40ꢀV
IRL40DM247
RevisionꢀHistory
IRL40DM247
Revision:ꢀ2022-08-30,ꢀRev.ꢀ2.5
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
2.3
2.4
2.5
Release of final version
2019-10-30
2020-03-05
2020-03-05
2020-09-21
2020-09-29
2022-08-30
Update Max Qg- page 5
Update Application
Update Rth from 1.6C/W to 2.0C/W
Rth symbol corrected from RTHJA to RTHJ-PCB in table 3
Update the Storage and operating temperature and reflow MSL3
Trademarks
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Final Data Sheet
14
Rev.ꢀ2.5,ꢀꢀ2022-08-30
相关型号：
IRL40SC209
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
IRL40SC228
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
IRL40T209
The IRL40T209 is a 40 V Logic Level StrongIRFETTM power MOSFET featuring high current capability and typical RDS(on) of 0.59 mOhm in a 10 x 11 mm TO-Leadless package.
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IRL510
Power Field-Effect Transistor, 4A I(D), 100V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
SAMSUNG
IRL510-009
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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IRL510-018
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
INFINEON
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