IRL6372 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;
| 型号： | IRL6372 |
| 厂家： | 
Infineon |
| 描述： | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
| 文件： | 总9页 (文件大小：281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97622
IRL6372PbF
HEXFET® Power MOSFET
VDS
VGS
30
12
V
V
±
RDS(on) max
(@VGS = 4.5V)
17.9
11
m
Ω
Qg (typical)
nC
A
SO-8
ID
8.1
(@TA = 25°C)
Applications
• Battery operated DC motor inverter MOSFET
• System/Load Switch
• Charge and Discharge Switches for Battery Application
FeaturesandBenefits
Features
Resulting Benefits
Industry-Standard SO-8 Package
Multi-Vendor Compatibility
⇒
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
Standard Pack
Form
Tube/Bulk
Note
Quantity
95
4000
IRL6372PBF
IRL6372TRPBF
SO-8
SO-8
Tape and Reel
Absolute Maximum Ratings
Max.
30
Parameter
Drain-to-Source Voltage
Units
VDS
V
±12
Gate-to-Source Voltage
V
GS
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
8.1
6.5
65
I
I
I
@ TA = 25°C
D
D
A
@ TA = 70°C
DM
2.0
P
P
@TA = 25°C
@TA = 70°C
Power Dissipation
D
D
W
W/°C
°C
1.3
Power Dissipation
0.02
Linear Derating Factor
Operating Junction and
-55 to + 150
T
T
J
Storage Temperature Range
STG
Notes through are on page 2
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1
01/17/2011
IRL6372PbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min.
30
Typ.
–––
23
Max. Units
BVDSS
–––
–––
17.9
23.0
1.1
V
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 8.1A
VGS = 2.5V, ID = 6.5A
VDS = VGS, ID = 10µA
∆ΒVDSS/∆TJ
RDS(on)
–––
–––
–––
0.5
mV/°C
14.0
17.0
–––
-4.0
–––
–––
–––
–––
–––
11
Static Drain-to-Source On-Resistance
mΩ
VGS(th)
Gate Threshold Voltage
V
∆
VGS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
30
–––
1.0
mV/°C
V
DS = 24V, VGS = 0V
IDSS
µA
VDS = 24V, VGS = 0V, TJ = 125°C
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
V
V
GS = 12V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
S
GS = -12V
DS = 10V, ID = 6.5A
gfs
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VGS = 4.5V
DS = 15V
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Gate Resistance
0.01
0.50
4.8
V
Qgs2
Qgd
nC
ID = 6.5A
Qgodr
5.69
5.3
Qsw
RG
2.2
Ω
VDD = 15V, VGS = 4.5V
ID = 6.5A
td(on)
tr
td(off)
tf
Turn-On Delay Time
5.9
Rise Time
13
ns
Ω
RG = 6.8
See Figs. 18
GS = 0V
Turn-Off Delay Time
34
Fall Time
15
V
Ciss
Coss
Crss
Input Capacitance
1020
98
VDS = 25V
pF
Output Capacitance
ƒ = 1.0MHz
Reverse Transfer Capacitance
68
Diode Characteristics
Conditions
Parameter
Min.
Typ.
Max. Units
D
S
IS
MOSFET symbol
Continuous Source Current
–––
–––
2.0
showing the
(Body Diode)
A
G
ISM
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
65
VSD
trr
T = 25°C, I = 6.5A, V = 0V
J S GS
Diode Forward Voltage
–––
–––
–––
–––
13
1.2
20
V
T = 25°C, I = 6.5A, VDD = 24V
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
J
F
Qrr
di/dt = 100/µs
5.3
8.0
Thermal Resistance
Typ.
–––
–––
Max.
20
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Units
RθJL
RθJA
°C/W
62.5
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 ich square copper board.
R is measured at TJ of approximately 90°C.
θ
2
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IRL6372PbF
100
10
100
10
1
VGS
10V
VGS
10V
TOP
TOP
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
1.3V
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
1.3V
BOTTOM
BOTTOM
1
60µs PULSE WIDTH
≤
1.3V
Tj = 25°C
0.1
0.01
1.3V
V
60µs PULSE WIDTH
≤
Tj = 150°C
0.1
0.1
1
10
100
0.1
1
10
100
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
I
= 8.1A
D
V
= 4.5V
GS
1.6
1.4
1.2
1.0
0.8
0.6
T
= 150°C
J
10
1
T
= 25°C
J
V
= 15V
DS
≤
60µs PULSE WIDTH
0.1
1.0
1.5
2.0
2.5 3.0 3.5
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
10000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 6.5A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
= C
V
V
V
= 24V
= 15V
= 6.0V
rss
oss
gd
= C + C
DS
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
1000
100
10
C
C
oss
rss
1
10
, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
30
V
DS
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRL6372PbF
100
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
T
= 150°C
1msec
J
T
= 25°C
J
10msec
10
DC
1
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
1.0
0.1
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
0.1
1.0
10
100
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
9
8
7
6
5
4
3
2
1
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
I
I
= 10µA
D
D
D
= 250µA
= 1.0mA
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
, Case Temperature (°C)
T , Temperature ( °C )
C
J
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case(Bottom)Temperature
100
D = 0.50
0.20
0.10
0.05
10
1
0.02
0.01
0.1
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
SINGLE PULSE
( THERMAL RESPONSE )
A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRL6372PbF
40
35
30
25
20
15
10
5
70
60
50
40
30
20
10
I
= 8.1A
D
Vgs = 2.5V
T = 125°C
J
Vgs = 4.5V
T
= 25°C
J
1
2
3
4
5
6
7
8
9
10 11 12
0
10
20
30
40
50
60
I , Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
250
25000
I
D
TOP
1.2A
1.8A
200
150
100
50
20000
15000
10000
5000
0
BOTTOM 6.5A
0
25
50
75
100
125
150
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
Time (sec)
Starting T , Junction Temperature (°C)
J
Fig 15. Typical Power vs. Time
Fig 14. Maximum Avalanche Energy vs. Drain Current
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
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5
IRL6372PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 17b. Gate Charge Waveform
Fig 17a. Gate Charge Test Circuit
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
Ω
0.01
t
AS
p
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+
VDD
-
10%
VGS
VGS
PulseWidth ≤ 1 µs
DutyFactor≤ 0.1
td(on)
td(off)
tr
tf
Fig 19a. Switching Time Test Circuit
Fig 19b. Switching Time Waveforms
6
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IRL6372PbF
SO-8 Package Outline (Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
www.irf.com
7
IRL6372PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Qualification information†
Cons umer††
(per JEDEC JES D47F ††† guidelines )
Qualification level
MS L 1
SO-8
Moisture Sensitivity Level
RoHS compliant
(per JEDEC J-S T D-020D†††
Yes
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/2011
8
www.irf.com
IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
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