IRLB4132 [INFINEON]
Uninterruptible power supply;
| 型号： | IRLB4132 |
| 厂家： | 
Infineon |
| 描述： | Uninterruptible power supply |
| 文件： | 总9页 (文件大小：2646K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRLB4132PbF
HEXFET® Power MOSFET
Application
Optimized for UPS/Inverter Applications
Low Voltage Power Tools
VDSS
30
V
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
3.5
m
4.5
36
nC
A
Benefits
ID (Silicon Limited)
ID (Package Limited)
150
78A
Best in Class Performance for UPS/Inverter Applications
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage and Current
Lead-Free, RoHS Compliant
S
D
G
TO-220AB
G
D
S
Gate
Drain
Source
Standard Pack
Base part number Package Type
IRLB4132PbF TO-220AB
Orderable Part Number
Form
Quantity
Tube
50
IRLB4132PbF
Absolute Maximum Rating
Symbol
Parameter
Max.
30
Units
V
V
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
VGS
± 20
150
100
78
ID @ TC = 25°C
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
620
140
68
PD @TC = 25°C
Maximum Power Dissipation
W
W
PD @TC = 100°C Maximum Power Dissipation
Linear Derating Factor
0.90
W/°C
TJ
Operating Junction and
-55 to + 175
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Symbol
Parameter
Typ.
–––
0.50
–––
Max.
1.11
–––
62
Units
Junction-to-Case
RJC
RCS
RJA
Case-to-Sink, Flat Greased Surface
°C/W
Junction-to-Ambient
Notes through are on page 8
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IRLB4132PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
30
––– –––
V
VGS = 0V, ID = 250µA
–––
–––
–––
17
2.5
3.5
––– mV/°C Reference to 25°C, ID = 1mA
BVDSS/TJ
3.5
4.5
VGS = 10V, ID = 40A
GS = 4.5V, ID = 32A
RDS(on)
Static Drain-to-Source On-Resistance
m
V
VGS(th)
VGS(th)/TJ
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
1.35 1.8 2.35
––– -7.7 ––– mV/°C
V
VDS = VGS, ID = 100µA
––– –––
1.0
V
DS =24 V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
––– ––– 100
––– ––– 100
––– ––– -100
190 ––– –––
VDS =24V,VGS = 0V,TJ =125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
V
V
GS = 20V
GS = -20V
DS = 15V, ID =32A
IGSS
nA
S
gfs
Qg
–––
–––
–––
–––
–––
36
9.1
4.2
13
54
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
–––
–––
–––
VDS = 15V
nC VGS = 4.5V
ID = 32A
13
––– 17.2 –––
––– 21 –––
––– 0.85 1.5
nC VDS = 16V, VGS = 0V
Gate Resistance
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
23
92
25
36
–––
–––
–––
–––
VDD = 15V
ID = 32A
Rise Time
ns
Turn-Off Delay Time
RG= 1.8
VGS = 4.5V
Fall Time
Ciss
Coss
Crss
Input Capacitance
––– 5110 –––
––– 960 –––
––– 440 –––
VGS = 0V
VDS = 15V
ƒ = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Avalanche Characteristics
EAS (Thermally limited)
EAS (tested)
IAR
310
900
32
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
A
EAR
Repetitive Avalanche Energy
14
mJ
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS
––– ––– 150
A
––– ––– 620
ISM
VSD
Diode Forward Voltage
––– –––
1.0
V
TJ = 25°C,IS = 32A,VGS = 0V
ns TJ = 25°C IF = 32A ,VDD=15V
nC
di/dt = 200A/µs
trr
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
29
49
44
74
Qrr
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IRLB4132PbF
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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IRLB4132PbF
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLB4132PbF
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. Typical On-Resistance vs. Gate Voltage
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IRLB4132PbF
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 15a. Unclamped Inductive Test Circuit
Fig 15b. Unclamped Inductive Waveforms
Fig 16a. Switching Time Test Circuit
Fig 16b. Switching Time Waveforms
Fig 17b. Gate Charge Waveform
Fig 17a. Gate Charge Test Circuit
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IRLB4132PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
E X A M P L E :
T H IS IS A N IR F 1 0 1 0
L O C O D E 1 7 8 9
A S S E M B L E D
IN T H A S S E M B L Y L IN
P A R T N U M B E R
D A T E C O D E
T
IN T E R N A T IO
R E C T IF IE R
L O
N A L
O
N
W
W
1 9 , 2 0 0 0
"C "
G
O
E
E
Y E A R
E E K 1 9
L IN
0
=
2 0 0 0
N
o t e : "P " in a s s e m b ly lin e p o s it io n
in d ic a t e s "L e a d F r e e "
A S S E M B L Y
L O C O D E
W
-
T
E
C
TO-220AB packages are not recommended for Surface Mount Application.
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IRLB4132PbF
Qualification Information
Qualification Level
Industrial
(per JEDEC JESD47F) †
TO-220AB
N/A
Yes
Moisture Sensitivity Level
RoHS Compliant
†
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.61mH, RG = 25, IAS = 32A.
Pulse width 400µs; duty cycle 2%.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 78A.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
Refer to application note #AN-994.
R is measured at TJ approximately 90°C.
Starting TJ =25°C, L=0.50mH, RG = 25, IAS =60A, VDD =25V. (Statistical Limit)
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IRLB4132PbF
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™,
CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™,
GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,
OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID
FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
Edition 2016-04-19
Published by
Infineon Technologies AG
81726 Munich, Germany
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
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Due to technical requirements products may
In addition, any information given in this contain dangerous substances. For information on
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Document reference
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representatives
of
Infineon
Technologies, Infineon Technologies’ products
may not be used in any applications where a
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use thereof can reasonably be expected to result in
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The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility
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customer’s
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completeness of the product information given in
this document with respect to such application.
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