IRLBA1304PBF [INFINEON]
Power Field-Effect Transistor, 95A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA, LEAD FREE, SUPER-220, 3 PIN;
| 型号： | IRLBA1304PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 95A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA, LEAD FREE, SUPER-220, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 91842A
IRLBA1304
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Ultra Low On-Resistance
l Same outline as TO-220
l 50% greater current in typ.
application conditions vs. TO-220
l Fully Avalanche Rated
D
VDSS = 40V
RDS(on) = 0.004Ω
G
ID = 185Aꢀ
●
Purchase IRLBA1304/P for solder plated option.
S
Description
The HEXFET® is the most popular power MOSFET in the world.
This particular HEXFET® is in the Super220TM and has the same outline and
pinout as the industry standard TO-220. It has increased current handling
capability over both the TO-220 and the much larger TO-247 package. This
makesitideal toreduce componentcount inmultiparalledTO-220applications,
reduce system power dissipation, upgrade existing designs or have TO-247
performance in a TO-220 outline. This package has also been designed to meet
automotive qualification standard Q101.
Super - 220
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
185, pkg limited to 95A*
130, pkg limited to 95A*
A
740
300
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
2.0
VGS
EAS
IAR
Gate-to-Source Voltage
± 16
Single Pulse Avalanche Energy
Avalanche Current
1160
100
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
30
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
°C
N
300 (1.6mm from case )
20
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
0.5
Max.
Units
RθJC
RθCS
RθJA
0.5
–––
58
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
–––
* Current capability in normal application, see Fig.9.
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1
9/14/99
IRLBA1304
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
40 ––– –––
––– 0.043 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– ––– 0.0040
––– ––– 0.0065
VGS = 10V, ID = 110A
VGS = 4.5V, ID = 93
VDS = VGS, ID = 250µA
VDS = 25V, ID = 110A
VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 150°C
VGS = 16V
Ω
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
1.0
––– –––
V
S
Forward Transconductance
120 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 140
––– ––– 39
––– ––– 79
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -16V
Qg
ID = 110A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 32V
VGS = 4.5V, See Fig. 6 and 13
–––
––– 350 –––
––– 45 –––
––– 103 –––
21 –––
VDD = 20V
ID = 110A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 0.9Ω
RD = 0.18Ω,See Fig. 10
Between lead,
6mm (0.25in.)
from package
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
2.0 –––
nH
pF
G
––– 5.0 –––
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 7660 –––
––– 2150 –––
––– 460 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
185*
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 740
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 100 150
––– 250 380
V
TJ = 25°C, IS = 110A, VGS = 0V
ns
TJ = 25°C, IF = 110A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ISD ≤ 110A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Starting TJ = 25°C, L = 230µH
RG = 25Ω, IAS = 100A. (See Figure 12)
2
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IRLBA1304
1000
100
10
1000
100
10
VGS
15V
10V
5.0V
4.5V
3.5V
3.0V
2.7V
VGS
15V
10V
5.0V
4.5V
3.5V
3.0V
2.7V
TOP
TOP
BOTTOM 2.5V
BOTTOM 2.5V
1
2.5V
2.5V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
°
°
T = 175 C
J
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
170A
=
I
D
°
T = 25 C
J
°
T = 175 C
J
2.0
1.5
1.0
0.5
0.0
100
10
1
V
= 25V
DS
V
= 10V
20µs PULSE WIDTH
GS
0.1
2.0
4.0
6.0
8.0
10.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRLBA1304
15
12
9
12000
I
D
= 110A
V
= 0V,
f = 1MHz
C
GS
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
C
= C
gd
V
V
V
= 32V
= 20V
= 8V
rss
DS
DS
DS
10000
8000
6000
4000
2000
0
C
= C + C
oss
ds
C
iss
6
C
oss
3
C
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
1
10
100
0
40
Q
80
120
160
200
V
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
10000
1000
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 175 C
J
10us
100
100us
1ms
°
T = 25 C
J
°
= 25 C
T
C
10ms
°
T
= 175 C
J
V
= 0 V
GS
1.6
Single Pulse
10
0.4
10
0.6
V
0.8
1.0
1.2
1.4
1.8
1
10
100
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRLBA1304
RD
200
160
120
80
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
40
V
DS
90%
0
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.01
0.10
0.05
0.02
0.01
P
SINGLE PULSE
(THERMAL RESPONSE)
DM
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T = P
x Z
+ T
thJC C
J
DM
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLBA1304
3000
2500
2000
1500
1000
500
I
D
TOP
41A
71A
1 5V
BOTTOM 100A
DRIVER
L
V
G
DS
D.U.T
R
+
V
D D
-
I
A
AS
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
V
J
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
4.5 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRLBA1304
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRLBA1304
Super-220 Package Outline
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice. 9/99
8
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