IRLBD59N04E [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRLBD59N04E |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -93910
IRLBD59N04E
HEXFET® Power MOSFET
l Integrated Temperature Sensing Diode
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
VDSS = 40V
l 175°C Operating Temperature
l Fully Avalanche Rated
RDS(on) = 0.018Ω
l Zener Gate Protected
ID = 59A
Description
The IRLBD59N04E is a 40V, N-channel HEXFET®
power MOSFET with gate protection provided by
integrated back to back zener diodes. Temperature
sensing is given by the change in forward voltage drop
oftwoantiparallelelectricallyisolatedpoly-silicondiodes.
The IRLBD59N04E provides cost effective temperature
sensing for system protection along with the quality and
ruggednessyouexpectfromaHEXFETpowerMOSFET.
5 Lead-D2Pak
Absolute Maximum Ratings
Parameter
Max.
59
41
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
230
PD @TC = 25°C
Power Dissipation
130
W
W/°C
V
Linear Derating Factor
0.89
± 10
320
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
35
EAR
dv/dt
IG
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
VGS Clamp Current
13
mJ
V/ns
mA
kV
2.2
± 50
± 2.0
-55 to + 175
VESD
TJ
Electrostatic Votage Rating
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
1.12
Units
°C/W
RθJC
RθJA
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
40
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1
4/11/00
IRFLBD59N04E
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
40 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.036 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.018
––– ––– 0.021
VGS = 10V, ID = 35A
VGS = 5.0V, ID = 30A
VDS = VGS, ID = 250µA
IGSS = 20µA
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
VGS
Gate Threshold Voltage
Clamp Voltage
1.0
10
29
––– 2.0
––– 20
––– –––
V
V
S
gfs
Forward Transconductance
VDS = 25V, ID = 35A
VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 150°C
VGS = 5.0V
––– ––– 25
––– ––– 250
––– ––– 1.0
––– ––– -1.0
––– ––– 53
––– ––– 16
––– ––– 18
µA
µA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -5.0V
Qg
ID = 35A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 32V
VGS = 5.0V, See Fig. 6 and 13
–––
7.9 –––
VDD = 20V
––– 110 –––
ID = 35A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
30 –––
74 –––
RG = 5.1Ω,
VGS = 5.0V, See Fig.10
Between lead,
6mm (0.25in.)
from package
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 2.0 –––
––– 5.0 –––
nH
G
and center of die contact
VGS = 0V
S
Ciss
Input Capacitance
––– 2310 –––
––– 640 –––
––– 130 –––
––– 2250 –––
––– 580 –––
––– 530 –––
Coss
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
Output Capacitance
pF
ƒ = 1.0MHz, See Fig. 5
Coss
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
59
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
230
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 54 81
––– 90 130
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
TJ = 25°C, IS = 35A, VGS = 0V
ns
TJ = 25°C, IF = 35A
Qrr
ton
nC di/dt = 100A/µs
Sense Diode Rating
Parameter
Min. Typ. Max. Units
675 ––– 725 mV IF = 250µA
-1.30 -1.40 -1.58 mV/°C IF = 250µA, See Fig.14
Conditions
VFM
Sense Diode Maximum Voltage Drop
Sense Diode Temperature Coefficient
∆VF/∆TJ
2
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IRLBD59N04E
1000
100
10
1000
100
10
VGS
15V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
TOP
TOP
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
BOTTOM 2.7V
2.7V
2.7V
20µs PULSE WIDTH
T = 175 C
J
20µs PULSE WIDTH
°
°
T = 25 C
J
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
59A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
100
°
T = 175 C
J
V
= 15V
DS
20µs PULSE WIDTH
V
= 10V
GS
10
2.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
3.0
V
4.0
5.0
6.0 7.0
8.0
T , Junction Temperature ( C)
J
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFLBD59N04E
10
8
10000
I
D
= 35A
V
= 0V,
f = 1 MHZ
GS
C
= C + C
,
C
ds
SHORTED
V
V
= 32V
= 20V
iss
gs
gd
DS
DS
C
= C
rss
gd
C
= C + C
oss
ds gd
Ciss
6
1000
Coss
4
2
Crss
FOR TEST CIRCUIT
SEE FIGURE 13
100
0
0
10
20
30
40
50
1
10
, Drain-to-Source Voltage (V)
100
Q
, Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 175 C
J
100us
1ms
°
T = 25 C
J
10ms
1
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
2.5
0.1
0.0
1
0.5
1.0
1.5
2.0
3.0
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRLBD59N04E
60
50
40
30
20
10
0
RD
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
DS
90%
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
10
1
D = 0.50
0.20
P
DM
0.10
0.05
0.1
0.01
t
1
0.02
0.01
t
SINGLE PULSE
2
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
thJC C
J
DM
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFLBD59N04E
800
600
400
200
0
1 5V
I
D
TOP
14A
29A
35A
BOTTOM
DRIVER
L
V
G
DS
D.U.T
R
+
V
D D
-
I
A
AS
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
0.80
0.70
0.60
0.50
0.40
Q
Q
GD
GS
V
G
I
= 250uA
Charge
F
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
0
20
40
60
80 100 120 140 160 180
V
GS
T
, Junction Temperature (°C)
3mA
J
I
I
D
G
Current Sampling Resistors
Fig 14. Sense Diode Voltage Drop
Vs.Temperature
Fig 13b. Gate Charge Test Circuit
6
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IRLBD59N04E
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
-
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
[
[
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 15. For N-channel HEXFET® power MOSFETs
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7
IRFLBD59N04E
Case Outline 5 Lead-D2Pak (SMD-220)
PIN ASSIGNMENTS
1 - G - GATE
2 - T1 - ANODE
3 - D - DRAIN
4 - T2 - CATHODE
5 - S - SOURCE
Notes:
Repetitive rating; pulse width limited by
ꢀCoss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. ( See fig. 11 )
as Coss while VDS is rising from 0 to 80% VDSS
Current limited by the package ( Die current is 59A)
Starting TJ = 25°C, L = 0.52mH
RG = 25Ω, IAS = 35A. (See Figure 12)
C = 100pF, R = 1.5kΩ
ISD ≤ 35A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
Pulse width ≤ 300µs; duty cycle ≤ 2%.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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Data and specifications subject to change without notice. 4/00
8
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相关型号：
IRLBD59N04EPBF
Power Field-Effect Transistor, 39A I(D), 40V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-220, D2PAK-5
INFINEON
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