IRLHS2242TRPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRLHS2242TRPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总9页 (文件大小：266K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96360
IRLHS2242PbF
HEXFET® Power MOSFET
VDS
-20
12
V
V
TOP VIEW
VGS max
±
RDS(on) max
(@VGS = 4.5V)
31
m
Ω
Ω
D
D
D
1
2
6
5
4
D
D
S
D
G
D
RDS(on) max
(@VGS = 2.5V)
Qg typ
D
53
m
D
D
S
S
9.6
S
nC
A
G 3
2mm x 2mm PQFN
ID
-8.5
(@Tc(Bottom) = 25°C)
Applications
l Charge and Discharge Switch for Battery Application
l System/load switch
Features and Benefits
Features
Benefits
Low Thermal Resistance to PCB (≤ 13°C/W)
Low Profile (≤ 1.0mm)
Enable better thermal dissipation
results in Increased Power Density
⇒
Industry-Standard Pinout
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Orderable part number
Package Type
Standard Pack
Note
Form
Tape and Reel
Tape and Reel
Quantity
4000
IRLHS2242TRPBF
IRLHS2242TR2PBF
PQFN 2mm x 2mm
PQFN 2mm x 2mm
400
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
-20
±12
-7.2
-5.8
V
V
GS
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
I
I
I
I
I
I
@ TA = 25°C
D
D
D
D
D
@ TA = 70°C
-15
-9.8
-8.5
@ TC(Bottom) = 25°C
@ TC(Bottom) = 100°C
@ TC = 25°C
A
Continuous Drain Current, VGS @ 4.5V (Wirebond Limited)
Pulsed Drain Current
-34
2.1
9.6
DM
Power Dissipation
P
P
@TA = 25°C
D
D
W
Power Dissipation
@TC(Bottom) = 25°C
Linear Derating Factor
Operating Junction and
0.02
-55 to + 150
W/°C
°C
T
J
T
Storage Temperature Range
STG
Notes through are on page 9
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1
03/18/11
IRLHS2242TR/TR2PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = -250μA
––– V/°C Reference to 25°C, ID = -1mA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
-20
–––
–––
–––
-0.4
–––
–––
–––
–––
–––
10
–––
0.01
25
–––
V
ΔΒVDSS/ΔTJ
RDS(on)
31
53
VGS = -4.5V, ID = -8.5A
mΩ
43
VGS = -2.5V, ID = -6.8A
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
-0.8
-3.8
–––
–––
–––
–––
–––
12
-1.1
V
VDS = VGS, ID = -10μA
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
-1.0
μA
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = -12V
-150
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
-100
nA
100
VGS = 12V
gfs
Qg
–––
–––
–––
–––
–––
–––
–––
–––
S
VDS = -10V, ID = -8.5A
–––
–––
–––
–––
–––
–––
–––
nC VGS =-10V, VDS = -10V, ID = -8.5A
VDS = -10V
Qg
9.6
1.6
3.7
4.3
4.8
6.8
Total Gate Charge
Qgs
Qgd
Qgodr
Qsw
Qoss
VGS = -4.5V
ID = -8.5A
nC
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
nC
VDS = 16V, VGS = 0V
RG
td(on)
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
–––
17
7.9
54
Ω
–––
–––
VDD = -10V, VGS = -4.5V
ID = -8.5A
tr
–––
–––
–––
–––
–––
–––
ns
td(off)
tf
Ω
RG = 2.0
Turn-Off Delay Time
Fall Time
54
66
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
877
273
182
V
GS = 0V
DS = -10V
V
pF
ƒ = 1.0KHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
18
Avalanche Current
-8.5
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
D
–––
––– -8.5
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
ISM
–––
–––
-34
S
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
27
-1.2
41
V
T = 25°C, I = -8.5A, V = 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = -8.5A, VDD = -10V
J F
Qrr
ton
di/dt = 200A/μs
20
30
nC
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
13
90
60
42
Units
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
RθJC (Bottom)
RθJC (Top)
°C/W
Rθ
JA
RθJA (<10s)
2
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IRLHS2242TR/TR2PbF
100
10
1
100
10
1
VGS
-10V
VGS
-10V
TOP
TOP
-7.0V
-4.5V
-3.5V
-2.5V
-2.0V
-1.8V
-1.5V
-7.0V
-4.5V
-3.5V
-2.5V
-2.0V
-1.8V
-1.5V
BOTTOM
BOTTOM
-1.5V
-1.5V
60μs
PULSE WIDTH
≤
60μs
Tj = 150°C
PULSE WIDTH
≤
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1
1.4
1.2
1.0
0.8
0.6
I
= -8.5A
D
V
= -4.5V
GS
T
= 150°C
J
T = 25°C
J
V
= -10V
DS
≤
60μs PULSE WIDTH
0.1
0
1
2
3
4
5
-60 -40 -20
0
20 40 60 80 100 120 140160
T
J
, Junction Temperature (°C)
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
10000
1000
100
14
V
= 0V,
= C
f = 1 KHZ
GS
I = -8.5A
C
C
C
+ C , C
SHORTED
D
iss
gs
gd
ds
12
10
8
= C
rss
oss
gd
V
V
= -16V
DS
DS
= C + C
ds
gd
= -10V
VDS= -4V
C
iss
6
4
C
oss
C
rss
2
0
1
10
-V , Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRLHS2242TR/TR2PbF
1000
100
10
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
T
= 150°C
J
10
1
100μsec
1msec
10msec
Limited by
Wirebond
1
T = 25°C
J
DC
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.10
1
10
100
0.2
0.6
1.0
-V , Drain-to-Source Voltage (V)
-V , Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
16
1.5
14
12
10
8
Limited By Wirebond
1.2
0.9
0.6
0.3
0.0
6
I
= -10uA
D
ID = -250uA
ID = -1.0mA
ID = -10mA
4
2
0
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
, Case Temperature (°C)
T , Temperature ( °C )
C
J
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
Case Temperature
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRLHS2242TR/TR2PbF
70
60
50
40
30
20
10
80
I
D
I
= -8.5A
70
D
TOP
-2.2A
-4.3A
60
50
40
30
20
10
0
BOTTOM -8.5A
T
= 125°C
J
T
= 25°C
6
J
25
50
75
100
125
150
0
2
4
8
10
12
Starting T , Junction Temperature (°C)
J
-V
Gate -to -Source Voltage (V)
GS,
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
L
V
DS
I
AS
D.U.T
R
G
V
DD
I
A
AS
-VGS
DRIVER
-20V
0.01
Ω
t
p
t
p
V
(BR)DSS
15V
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
t
t
r
t
t
f
d(on)
d(off)
VGS
V
GS
D.U.T.
10%
RG
-
VDD
+
-VGS
90%
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
V
DS
Fig 15b. Switching Time Waveforms
Fig 15a. Switching Time Test Circuit
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5
IRLHS2242TR/TR2PbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T *
+
*
=10V
V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
InductorCurrent
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
* Reverse Polarity of D.U.T for P-Channel
Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
Id
Vds
L
VCC
Vgs
DUT
0
20K
Vgs(th)
Qgs1
Qgs2
Qgodr
Qgd
Fig 17a. Gate Charge Test Circuit
Fig 17b. Gate Charge Waveform
6
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IRLHS2242TR/TR2PbF
PQFN Package Details
PQFN Part Marking
9301
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRLHS2242TR/TR2PbF
PQFN 2x2 Outline Tape and Reel
CORE
TAPE
Remark:
Width
- Dimension above are typical dimensions.
- Cover tape thickness is 0.048mm +/- 0.005mm.
- Surface resistivity 10E5 < Rs <10E9.
Table 2:
COVER
TOLERANCE
TAPE
(WIDTH)
+/- 0.1 mm
+/- 0.1 mm
5.4 mm
9.5 mm
8
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IRLHS2242TR/TR2PbF
Qualification information†
Consumer††
(per JEDEC JESD47F ††† guidelines )
Qualification level
MSL1
Moisture Sensitivity Level
RoHS compliant
PQFN 2mm x 2mm
(per IPC/JEDEC J-STD-020D†† †
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.49mH, RG = 50Ω, IAS = -8.5A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature.
Package is limited to -8.5A by die-source to lead-frame bonding technology
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310)
252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/2011
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