IRLL014 [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | IRLL014 |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET |
| 文件： | 总8页 (文件大小：210K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 90866A
IRLL014
HEXFET® Power MOSFET
l Surface Mount
D
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Logic-Level Gate Drive
l RDS(on) Specified at VGS=4V & 5V
l Fast Switching
VDSS = 60V
RDS(on) = 0.20Ω
ID = 2.7A
G
l Ease of Paralleling
S
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
andcost-effectiveness.
TheSOT-223packageisdesignedforsurface-mountusing
vapor phase, infra red, or wave soldering techniques. Its
uniquepackagedesignallowsforeasyautomaticpick-and-
place as with other SOT or SOIC packages but has the
addedadvantageofimprovedthermalperformancedueto
an enlarged tab for heatsinking. Power dissipation of
grreater than 1.25W is possible in a typical surface mount
application.
SO T -223
Absolute Maximum Ratings
Parameter
Max.
2.7
Units
ID @ Tc = 25°C
ID @ Tc = 100°C
IDM
Continuous Drain Current, VGS @ 10 V
Continuous Drain Current, VGS @ 10 V
Pulsed Drain Current
1.7
A
22
PD @Tc = 25°C
PD @TA = 25°C
PowerDissipation
3.1
Power Dissipation (PCB Mount)**
LinearDeratingFactor
2.0
W
0.025
0.017
-/+10
100
2.7
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
W/°C
V
VGS
EAS
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
IAR
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldewring Temperature, for 10 seconds
0.31
4.5
mJ
V/ns
dv/dt
TJ, TSTG
-55 to + 150
300 (1.6mm from case)
°C
Thermal Resistance
Parameter
Junction-to-PCB
Typ.
–––
–––
Max.
40
Units
RθJC
RθJA
°C/W
Junction-to-Ambient.(PCBMount)**
60
** When mounted on 1'' SQUARE pcb (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
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1
2/1/99
IRLL014
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
60 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.073 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.20
––– ––– 0.28
VGS = 5.0V, ID = 1.6A
VGS = 4.0V, ID = 1.4A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 1.6 A
VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 125°C
VGS = 10V
RDS(on)
StaticDrain-to-SourceOn-Resistance
Ω
V
S
VGS(th)
gfs
GateThresholdVoltage
1.0
3.2
––– 2.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 8.4
––– ––– 3.5
––– ––– 6.0
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-SourceForwardLeakage
Gate-to-SourceReverseLeakage
Total Gate Charge
VGS = -10V
Qg
ID = 10A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 48V
VGS = 5.0V, See Fig. 6 and 13
–––
9.3 –––
VDD = 30V
––– 110 –––
ID = 10A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
––
17 –––
26 –––
RG = 12 Ω
RD = 2.8 Ω, See Fig. 10
D
Betweenlead,6mm(0.25in)
from package and center
of die contact.
LD
InternalDrainInductance
–––
4.0 –––
nH
G
LS
InternalSourceInductance
–––
6.0 –––
S
Ciss
Coss
Crss
Input Capacitance
––– 400 –––
––– 170 –––
VGS = 0V
Output Capacitance
pF
VDS = 25V
Reverse Transfer Capacitance
–––
42 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
ContinuousSourceCurrent
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
IS
––– ––– 2.7
A
ISM
Pulsed Source Current
(Body Diode)
integralreverse
––– ––– 22
p-njunctiondiode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
ForwardTurn-OnTime
––– ––– 1.6
––– 65 130
––– 0.33 0.65
V
TJ = 25°C, IS = 2.7A, VGS = 0V
ns
TJ = 25°C, IF = 10A
Qrr
ton
µC di/dt = 100A/µs
Intrinsicturn-ontimeisnegligible(turn-onisdominatedbyLS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 10A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
VDD=25V, starting TJ = 25°C, L =16 mH
RG = 25Ω, IAS = 2.7A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRLL014
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IRLL014
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IRLL014
Package Outline
SOT-223 (TO-261AA) Outline
Part Marking Information
EXAMPLE : THIS IS AN IRFL014
SOT-223
W AFER
PART NUMBER
LOT CODE
FL014
314
XXXXXX
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE (YW W )
Y
=
LAST DIGIT OF THE YEAR
W EEK
BOTTOM
TOP
W W
=
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7
IRLL014
Tape & Reel Information
SOT-223 Outline
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
2.05 (.080)
1.95 (.077)
TR
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED D IREC T IO N
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
12.10 (.475)
11.90 (.469)
N O T ES
1. CO N TRO LLING DIM EN SIO N : MILLIM E TER.
2. O U T LIN E CO N FO R M S TO EIA-481 EIA-541.
:
&
3. EAC H O 330.00 (13.00) R EEL CO NT AINS 2,500 D EVICES.
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
M AX.
50.00 (1.969)
M IN .
18.40 (.724)
M AX.
NO TES
:
1. O UT LIN E C O M FO R M S TO EIA-418-1.
2. CO N TR O LLIN G DIM ENSIO N : M ILLIM ETER..
3. DIM ENSIO N M EASURED
14.40 (.566)
12.40 (.488)
4
@ HU B.
4. IN CLU DES FLANG E D ISTO R TIO N
@
O UTER ED G E.
3
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice. 2/99
8
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