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IRLL024NQ [INFINEON]

HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
IRLL024NQ
型号： IRLL024NQ
厂家： Infineon    Infineon
描述：

HEXFET㈢ Power MOSFET
HEXFET㈢功率MOSFET

晶体 晶体管 开关 脉冲 光电二极管
文件： 总10页 (文件大小：166K)
中文：  中文翻译
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PD-94152  
AUTOMOTIVE MOSFET  
IRLL024NQ  
Typical Applications  
HEXFET® Power MOSFET  
●
●
●
●
●
Electronic Fuel Injection  
Active Suspension  
Power Doors, Windows & Seats  
Cruise Control  
Air Bags  
D
VDSS = 55V  
Benefits  
R
DS(on) = 0.065Ω  
●
●
●
●
●
●
Advanced Process Technology  
G
Ultra Low On-Resistance  
175°C Operating Temperature  
Repetitive Avalanche Allowed up to Tjmax  
Dynamic dv/dt Rating  
ID = 3.1A  
S
Automotive [Q101] Qualified  
Description  
Specifically designed for Automotive applications, this HEXFET® Power MOSFET  
in a SOT-223 package utilizes the lastest processing techniques to achieve  
extremely low on-resistance per silicon area. Additional features of this Automotive  
qualified HEXFET Power MOSFET are a 175°C junction operating temperature,  
fast switching speed and improved repetitive avalanche rating. These benefits  
combine to make this design an extremely efficient and reliable device for use in  
Automotive applications and a wide variety of other applications.  
SOT-223  
The efficient SOT-223 package is designed for surface mount and the enlarged tab  
provides improved thermal characteristics making it ideal in a variety of power  
applications. Power dissipation of 1.0W is possible in a typical surface mount  
application. Available in Tape & Reel.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 70°C  
IDM  
Continuous Drain Current, VGS @ 4.5V  
Continuous Drain Current, VGS @ 4.5V  
Pulsed Drain Current   
3.1  
2.6  
12  
A
PD @TC = 25°C  
Power Dissipationƒ  
1.3  
8.3  
±16  
87  
W
mW/°C  
V
Linear Derating Factor  
VGS  
Gate-to-Source Voltage  
EAS  
Single Pulse Avalanche Energy„  
Avalanche Current  
mJ  
IAR  
See Fig.16c, 16d, 19, 20  
A
mJ  
V/ns  
°C  
EAR  
Repetitive Avalanche Energy†  
Peak Diode Recovery dv/dt ꢀ  
Junction and Storage Temperature Range  
dv/dt  
TJ, TSTG  
9.9  
-55 to + 175  
Thermal Resistance  
Parameter  
Typ.  
90  
50  
Max.  
120  
60  
Units  
RθJA  
RθJA  
Junction-to-Amb. (PCB Mount, steady state)*  
Junction-to-Amb. (PCB Mount, steady state)**  
°C/W  
* When mounted on FR-4 board using minimum recommended footprint.  
** When mounted on 1 inch square copper board, for comparison with other SMD devices.  
www.irf.com  
1
03/16/01  
IRLL024NQ  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
55 ––– –––  
Conditions  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
V
VGS = 0V, ID = 250µA  
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient  
––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA  
––– ––– 0.065  
––– ––– 0.080  
1.0 ––– 2.0  
4.5 ––– –––  
––– ––– 25  
––– ––– 250  
––– ––– 100  
––– ––– -100  
VGS = 10V, ID = 3.1A ‚  
VGS = 5.0V, ID = 2.5A ‚  
VDS = VGS, ID = 250µA  
VDS = 25V, ID = 1.9A  
RDS(on)  
Static Drain-to-Source On-Resistance  
mΩ  
VGS(th)  
gfs  
Gate Threshold Voltage  
V
S
Forward Transconductance  
VDS = 55V, VGS = 0V  
IDSS  
IGSS  
Drain-to-Source Leakage Current  
µA  
nA  
VDS = 44V, VGS = 0V, TJ = 125°C  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
VGS = 16V  
VGS = -16V  
ID = 1.9A  
Qg  
––– 11  
17  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
––– 1.9 –––  
––– 4.3 –––  
––– 12 –––  
––– 41 –––  
––– 48 –––  
––– 39 –––  
––– 508 –––  
––– 141 –––  
––– 62 –––  
nC VDS = 44V  
VGS = 10V  
VDD = 28V ‚  
ID = 1.9A  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RG = 24Ω  
RD = 15Ω  
Ciss  
Coss  
Crss  
Input Capacitance  
VGS = 0V  
Output Capacitance  
pF  
VDS = 25V  
Reverse Transfer Capacitance  
ƒ = 1.0MHz  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
D
IS  
MOSFET symbol  
showing the  
–––  
–––  
3.1  
12  
–––  
–––  
A
G
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
p-n junction diode.  
S
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
––– ––– 1.0  
V
TJ = 25°C, IS = 1.9A, VGS = 0V ‚  
TJ = 25°C, IF = 1.9A  
––– 40  
––– 65  
60  
97  
ns  
Qrr  
nC di/dt = 100A/µs ‚  
Notes:  
Repetitive rating; pulse width limited by  
„Starting TJ = 25°C, L = 18mH  
RG = 25Ω, IAS = 3.1A. (See Figure 12).  
ꢀISD ≤ 1.9A, di/dt ≤ 197A/µs, VDD ≤ V(BR)DSS  
TJ ≤ 175°C  
max. junction temperature.  
,
‚Pulse width ≤ 400µs; duty cycle ≤ 2%.  
ƒSurface mounted on 1 in square Cu board  
†
Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive  
avalanche performance.  
2
www.irf.com  
IRFLL024NQ  
100  
10  
1
100  
10  
1
VGS  
15V  
10V  
7.0V  
5.5V  
4.5V  
4.0V  
3.5V  
VGS  
15V  
10V  
7.0V  
5.5V  
4.5V  
4.0V  
3.5V  
TOP  
TOP  
BOTTOM 2.7V  
BOTTOM 2.7V  
2.7V  
2.7V  
20µs PULSE WIDTH  
20µs PULSE WIDTH  
°
T = 25 C  
J
°
T = 175 C  
J
0.1  
0.1  
0.1  
0.1  
1
10  
100  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 2. Typical Output Characteristics  
Fig 1. Typical Output Characteristics  
2.5  
100.00  
10.00  
1.00  
3.1A  
=
I
D
T
= 175°C  
J
2.0  
1.5  
1.0  
0.5  
0.0  
T
= 25°C  
J
V
= 15V  
DS  
20µs PULSE WIDTH  
V
= 10V  
GS  
1.0  
3.0  
5.0  
7.0  
9.0 11.0 13.0 15.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160 180  
°
T , Junction Temperature ( C)  
J
V
, Gate-to-Source Voltage (V)  
GS  
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
www.irf.com  
3
IRLL024NQ  
6
5
4
2
1
0
10000  
I
D
= 3.1A  
V
= 0V,  
f = 1 MHZ  
V
V
V
= 44V  
= 27V  
= 11V  
GS  
DS  
DS  
DS  
C
= C + C  
,
C
ds  
SHORTED  
iss  
gs gd  
C
= C  
rss  
gd  
C
= C + C  
oss  
ds gd  
1000  
100  
10  
Ciss  
Coss  
Crss  
0
3
6
9
12  
15  
1
10  
100  
Q
, Total Gate Charge (nC)  
G
V
, Drain-to-Source Voltage (V)  
DS  
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-Source Voltage  
Drain-to-Source Voltage  
100  
10  
1
100  
10  
1
OPERATION IN THIS AREA  
LIMITED BY R  
(on)  
DS  
100µsec  
1msec  
°
T = 175 C  
J
°
T = 25 C  
J
10msec  
Tc = 25°C  
Tj = 175°C  
Single Pulse  
V
= 0 V  
0.1  
GS  
0.1  
0.3  
1
10  
100  
1000  
0.5  
0.7  
1.0  
1.2  
V
,Source-to-Drain Voltage (V)  
V
, Drain-toSource Voltage (V)  
SD  
DS  
Fig 7. Typical Source-Drain Diode  
Fig 8. Maximum Safe Operating Area  
Forward Voltage  
4
www.irf.com  
IRFLL024NQ  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
RD  
VDS  
VGS  
D.U.T.  
RG  
+VDD  
-
VGS  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig 10a. Switching Time Test Circuit  
V
DS  
90%  
25  
50  
75  
100  
125  
150  
175  
°
, Case Temperature ( C)  
T
C
10%  
Fig 9. Maximum Drain Current Vs.  
V
GS  
Case Temperature  
t
t
r
t
t
f
d(on)  
d(off)  
Fig 10b. Switching Time Waveforms  
1000  
100  
10  
D = 0.50  
0.20  
0.10  
0.05  
P
DM  
0.02  
0.01  
t
1
1
t
2
Notes:  
SINGLE PULSE  
(THERMAL RESPONSE)  
1. Duty factor D =  
t / t  
1 2  
2. Peak T =P  
J
x Z  
+ T  
thJC C  
DM  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient  
www.irf.com  
5
IRLL024NQ  
0.10  
0.09  
0.08  
0.400  
0.350  
0.300  
0.250  
0.200  
0.150  
0.100  
0.050  
I
= 3.1A  
D
0.07  
0.06  
0.05  
V
= 10V  
GS  
3.0  
5.0  
-V  
7.0  
9.0  
11.0  
13.0  
15.0  
0
10 20 30 40 50 60 70 80  
, Drain Current (A)  
Gate -to -Source Voltage (V)  
I
GS,  
D
Fig 13. Typical On-Resistance Vs. Drain  
Fig 12. Typical On-Resistance Vs. Gate  
Current  
Voltage  
60  
50  
40  
30  
20  
10  
0
2.0  
1.8  
1.6  
I
= 250µA  
D
1.4  
1.2  
1.0  
0.8  
-75 -50 -25  
0
25 50 75 100 125 150 175  
1.00  
10.00  
100.00  
1000.00  
T
, Temperature ( °C )  
Time (sec)  
J
Fig 15. Typical Power Vs. Time  
Fig 14. Typical Threshold Voltage Vs.  
Junction Temperature  
6
www.irf.com  
IRFLL024NQ  
250  
200  
150  
100  
50  
I
D
TOP  
1.3A  
2.6A  
BOTTOM 3.1A  
1 5V  
DRIVER  
L
V
G
DS  
D.U.T  
AS  
R
+
V
D D  
-
I
A
20V  
0.01  
t
Ω
p
Fig 16c. Unclamped Inductive Test Circuit  
0
25  
50  
75  
100  
125  
150  
175  
°
Starting T , Junction Temperature ( C)  
J
V
(BR)DSS  
Fig 16a. Maximum Avalanche Energy  
t
p
Vs. Drain Current  
I
AS  
Fig 16d. Unclamped Inductive Waveforms  
Current Regulator  
Same Type as D.U.T.  
Q
G
50KΩ  
.2µF  
12V  
VGS  
.3µF  
Q
Q
GD  
GS  
+
V
DS  
D.U.T.  
-
V
V
GS  
G
3mA  
I
I
D
G
Charge  
Current Sampling Resistors  
Fig 18. Basic Gate Charge Waveform  
Fig 17. Gate Charge Test Circuit  
www.irf.com  
7
IRLL024NQ  
1000  
Duty Cycle = Single Pulse  
100  
10  
Allowed avalanche Current vs  
avalanche pulsewidth, tav  
assuming  
Tj = 25°C due to  
∆
avalanche losses  
1
0.01  
0.05  
0.10  
0.1  
0.01  
0.001  
1.0E-08  
1.0E-07  
1.0E-06  
1.0E-05  
1.0E-04  
1.0E-03  
1.0E-02  
1.0E-01  
1.0E+00 1.0E+01 1.0E+02 1.0E+03  
tav (sec)  
Fig 19. Typical Avalanche Current Vs.Pulsewidth  
Notes on Repetitive Avalanche Curves , Figures 15, 16:  
(For further info, see AN-1005 at www.irf.com)  
1. Avalanche failures assumption:  
Purely a thermal phenomenon and failure occurs at a  
temperature far in excess of Tjmax. This is validated for  
every part type.  
2. Safe operation in Avalanche is allowed as long asTjmax is  
not exceeded.  
3. Equation below based on circuit and waveforms shown in  
Figures 12a, 12b.  
4. PD (ave) = Average power dissipation per single  
avalanche pulse.  
5. BV = Rated breakdown voltage (1.3 factor accounts for  
voltage increase during avalanche).  
6. Iav = Allowable avalanche current.  
7. ∆T = Allowable rise in junction temperature, not to exceed  
Tjmax (assumed as 25°C in Figure 15, 16).  
tav = Average time in avalanche.  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TOP  
BOTTOM 10% Duty Cycle  
= 3.1A  
Single Pulse  
I
D
D = Duty cycle in avalanche = tav ·f  
ZthJC(D, tav) = Transient thermal resistance, see figure 11)  
25  
50  
75  
100  
125  
150  
175  
Starting T , Junction Temperature (°C)  
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = ∆T/ ZthJC  
Fig 20. Maximum Avalanche Energy  
Iav = 2∆T/ [1.3·BV·Zth]  
EAS (AR) = PD (ave)·tav  
Vs. Temperature  
8
www.irf.com  
IRFLL024NQ  
Package Outline  
SOT-223  
Part Marking Information  
EXAMPLE : THIS IS AN IRFL014  
SOT-223  
W AFER  
PART NUMBER  
LO T CO DE  
FL014  
314  
XXXXXX  
INTERNATIO NAL  
RECTIFIER  
LOG O  
DATE CO DE (YW W )  
Y
=
LAST DIG IT OF THE YEAR  
W EEK  
BO TTOM  
TOP  
W W  
=
www.irf.com  
9
IRLL024NQ  
Tape & Reel Information  
SOT-223  
4.10 (.161)  
3.90 (.154)  
0.35 (.013)  
0.25 (.010)  
1.85 (.072)  
1.65 (.065)  
2.05 (.080)  
1.95 (.077)  
T R  
7.55 (.297)  
7.45 (.294)  
16.30 (.641)  
15.70 (.619)  
7.60 (.299)  
7.40 (.292)  
1.60 (.062)  
1.50 (.059)  
TYP .  
FE E D D IR E C T IO N  
2.30 (.09 0)  
2.10 (.08 3)  
7.10 (.279)  
6.90 (.272)  
12.10 (.475)  
11.90 (.469)  
N O T E S  
1. C O N TR O LLIN G D IM E N S IO N : M ILLIM E T E R .  
2. O U T LIN E C O N F O R M S T O E IA -48 1 E IA -541.  
:
&
3. E A C H O 330.00 (13.00) R E EL C O N T A IN S 2,500 D E V IC E S .  
13.20 (.519)  
12.80 (.504)  
15.40 (.607)  
11.90 (.469)  
4
330.00  
(13.000)  
MAX.  
50.00 (1.969)  
M IN .  
18.40 (.724)  
M AX .  
N O T ES  
:
1. O U T LIN E C O M FO R M S T O E IA-418-1.  
2. C O N T R O LLIN G DIM EN SIO N : M ILLIM ET E R ..  
3. D IM E N S IO N M E A S UR E D  
14.40 (.566)  
12.40 (.488)  
4
@ H U B.  
4. IN CL U D E S F LA N G E D IS TO R TIO N  
@
O U T E R ED G E .  
3
Data and specifications subject to change without notice.  
This product has been designed and qualified for the Automotive [Q101] market.  
Qualification Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information. 3/01  
10  
www.irf.com  

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