IRLML0100PBF-1_15 [INFINEON]
Compatible with Existing Surface Mount Techniques;
| 型号： | IRLML0100PBF-1_15 |
| 厂家： | 
Infineon |
| 描述： | Compatible with Existing Surface Mount Techniques |
| 文件： | 总9页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRLML0100PbF-1
HEXFET® Power MOSFET
VDS
100
220
2.5
1.6
V
RDS(on) max
(@VGS = 10V)
Qg (typical)
G
S
1
2
m
Ω
nC
A
3
D
ID
(@TA = 25°C)
TM
Micro3 (SOT-23)
Features
Benefits
Industry-standard pinout SOT-23 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
MSL1, Industrial qualification
Standard Pack
Base Part Number
Package Type
Micro3 (SOT-23)
Orderable Part Number
Form
Quantity
IRLML0100TRPbF-1
Tape and Reel
3000
IRLML0100TRPbF-1
™
Absolute Maximum Ratings
Symbol
Parameter
Max.
100
Units
V
Drain-Source Voltage
VDS
1.6
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
1.3
7.0
A
1.3
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
PD @TA = 25°C
PD @TA = 70°C
W
0.8
0.01
± 16
W/°C
V
Gate-to-Source Voltage
VGS
-55 to + 150
Junction and Storage Temperature Range
°C
TJ, TSTG
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
Junction-to-Ambient
RθJA
RθJA
–––
–––
100
99
°C/W
Junction-to-Ambient (t<10s)
1
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 27, 2014
IRLML0100PbF-1
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
–––
1.0
–––
0.10
190
178
–––
–––
–––
–––
–––
1.3
–––
2.5
0.5
1.2
2.2
2.1
9.0
3.6
290
27
–––
–––
235
220
2.5
V
VGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
V/°C Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 1.3A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
m
VGS = 10V, ID = 1.6A
VDS = VGS, ID = 25μA
VGS(th)
IDSS
Gate Threshold Voltage
V
–––
–––
–––
–––
–––
5.7
20
VDS =100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
VGS = 16V
Drain-to-Source Leakage Current
μA
250
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
nA
VGS = -16V
RG
Ω
gfs
Qg
S
VDS = 50V, ID = 1.6A
ID = 1.6A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ns
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
VDS =50V
VGS = 4.5V
VDD =50V
Rise Time
ID = 1.0A
td(off)
tf
Turn-Off Delay Time
RG = 6.8Ω
VGS = 4.5V
VGS = 0V
Fall Time
Ciss
Coss
Crss
Input Capacitance
pF
Output Capacitance
VDS = 25V
ƒ = 1.0MHz
Reverse Transfer Capacitance
13
Source - Drain Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
–––
–––
–––
1.1
(Body Diode)
showing the
A
ISM
Pulsed Source Current
(Body Diode)
integral reverse
–––
7.0
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
20
1.3
30
20
V
TJ = 25°C, IS = 1.1A, VGS = 0V
ns TJ = 25°C, VR = 50V, IF=1.1A
Qrr
13
nC di/dt = 100A/μs
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board
Refer to application note #AN-994.
2
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 27, 2014
IRLML0100PbF-1
100
10
100
10
1
VGS
VGS
≤60μs PULSE WIDTH
Tj = 25°C
≤60μs PULSE WIDTH
Tj = 150°C
TOP
10.0V
4.50V
3.50V
3.30V
3.25V
2.50V
2.35V
2.25V
TOP
10.0V
4.50V
3.50V
3.30V
3.25V
2.50V
2.35V
2.25V
BOTTOM
BOTTOM
1
0.1
0.01
2.25V
2.25V
1
0.1
0.1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
10
2.5
2.0
1.5
1.0
0.5
I
= 1.6A
D
V
= 10V
GS
T
= 150°C
J
1
0.1
T
= 25°C
J
V
= 50V
DS
60μs PULSE WIDTH
≤
0.01
1.5
2.0
2.5
3.0
3.5
-60 -40 -20
T
0
20 40 60 80 100120 140 160
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 27, 2014
IRLML0100PbF-1
10000
1000
100
10
16
12
8
V
C
= 0V,
f = 1 MHZ
GS
I = 1.6A
= C + C , C SHORTED
D
iss
gs
gd ds
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
C
= C
rss
gd
C
= C + C
oss
ds
gd
C
iss
C
oss
C
rss
4
0
1
0
1
2
3
4
5
6
7
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100μsec
T
= 150°C
J
1
1
1msec
0.1
0.01
0.1
0.01
T
= 25°C
T
= 25°C
A
J
10msec
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
1
10
100
0.4
0.6
0.8
1.0
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 27, 2014
IRLML0100PbF-1
2.0
1.5
1.0
0.5
0.0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
, Ambient Temperature (°C)
A
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
1000
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
5
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 27, 2014
IRLML0100PbF-1
600
550
500
450
400
350
300
250
200
150
270
250
230
210
190
170
I
= 1.6A
D
Vgs = 4.5V
T
= 125°C
= 25°C
J
Vgs = 10V
T
8
J
2
4
6
10
0
2
4
6
8
I
, Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Typical On-Resistance Vs. Drain
Fig 12. Typical On-Resistance Vs. Gate
Current
Voltage
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 27, 2014
IRLML0100PbF-1
100
80
60
40
20
0
2.5
2.0
1.5
1.0
0.5
I
I
= 25uA
D
D
= 250uA
1E-005 0.0001 0.001
0.01
0.1
1
10
-75 -50 -25
0
25 50 75 100 125 150
Time (sec)
T
, Temperature ( °C )
J
Fig 16. Typical Power Vs. Time
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
7
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 27, 2014
IRLML0100PbF-1
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
S
DIMENSIONS
Y
S
DIME NS IONS
Y
M
M
B
O
L
B
O
L
MILLIMETERS
INCHES
6
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
MAX
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
MI N
MAX
.044
.0039
.040
.0196
.0078
.119
MILL IMET E RS
INCHES
D
5
E
A
A1
.036
.0004
.035
.0119
.0032
.111
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
MAX
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
MIN
MAX
.044
A2
b
c
6
5
3
.036
.0004
.035
A
A1
A2
b
E1
B
ccc
C
B
A
D
E
E1
e
.083
.048
.103
.055
1
2
.0039
.040
0.95 BSC
1.90 BSC
0.40 0.60
.0375 BSC
.075 BSC
.0158 .0236
e1
L
e
L1
L2
0
0.25 BSC
0.54 REF
.0118 BSC
.021 REF
e1
.0119
.0032
.111
.0196
.0078
.119
0°
8°
0°
8°
aaa
0.10
0.20
0.15
.004
.008
.006
bbb
ccc
c
L2
4
H
D
E
A2
A
L1
.083
.103
3X
b
bbb
A1
aaa
C
3 SURF
C
B A
E1
e
.048
.055
0
7
3X
L
0.95 BSC
1.90 BSC
0.40 0.60
.0375 BSC
.075 BSC
.0158 .0236
e1
L
RE COMME NDED F OOT P RINT
0.972
L EAD ASS IGNMENT
1. GATE
2. SOURCE
3. DRAIN
3X
L1
L2
0
0.25 BSC
0.54 REF
.0118 BSC
.021 REF
[.038]
2.742
[.1079]
0°
8°
0°
8°
NOTES
1. DIMENSIONING AND TOLERANCING PER AS ME Y14.5M-1994.
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ]
3. CONT ROLLING DIMENSION: MILLIMETER.
aaa
0.802
[.031]
0.10
0.20
0.15
.004
.008
.006
3X
0.95
[.0375]
bbb
ccc
1.90
[.075]
4
5
6
DAT UM PLANE H IS LOCAT ED AT THE MOLD PARTING LINE.
DAT UM A AND B TO BE DET ERMINED AT DAT UM PLANE H.
DIMENSIONS D AND E1 ARE MEASURED AT DAT UM PLANE H.
DIMENS IONS DOES NOT INCLUDE MOLD PROTRUS IONS OR
INT E RLE AD F L AS H. MOLD PROT RUS ION OR INT ER LEAD F LAS H
S HALL NOT EXCEED 0.25 MM [.010 INCH] PER SIDE.
7
DIMENSION L IS THE LEAD LENGT H FOR SOLDERING TO A SUBSTRATE.
8. OUT LINE CONFORMS TO JEDEC OUTLINE TO-236AB.
Micro3 (SOT-23 / TO-236AB) Part Marking Information
W= (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WORK
DATE CODE
PART NUMBER
LEAD FREE
YEAR
Y
WEE K
W
2011
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
2012
2013
2014
2015
2016
2017
2018
2019
2020
INDUSTRIAL VERSION
Cu WIR E
HALOGEN FREE
LOT CODE
X = PART NUMBER CODE REFERENCE:
A= IRLML2402
B = IRLML2803
C= IRLML6302
D = IRLML5103
E = IRLML6402
F = IRLML6401
G= IRLML2502
H = IRLML5203
S = IRLML6244
T = IRLML6246
U = IRLML6344
V= IRLML6346
W = IRFML8244
X = IRLML2244
Y = IRLML2246
Z = IRFML9244
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY A LETTER
WORK
YEAR
Y
WEE K
W
I
= IRLML0030
2011
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
27
28
29
30
A
B
C
D
2012
2013
2014
2015
2016
2017
2018
2019
2020
J = IRLML2030
K = IRLML0100
L = IRLML0060
M= IRLML0040
N = IRLML2060
P = IRLML9301
R = IRLML9303
F
G
H
J
K
50
51
52
X
Y
Z
Note: A line above the work week
(as shown here) indicates Lead- Free.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 27, 2014
IRLML0100PbF-1
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
TR
3.55 ( .139 )
3.45 ( .136 )
8.3 ( .326 )
7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
™
Micro3 (SOT-23)
Moisture Sensitivity Level
RoHS compliant
(per JEDEC J-S TD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Revision History
Date
Comment
•
10/27/2014
Updated partmarking to reflect Industrial partmarking on page 8.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 27, 2014
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