IRLML2060 [INFINEON]

60V 单个 N 通道 HEXFET Power MOSFET, 采用 Micro 3封装;


型号：	IRLML2060
厂家：	Infineon
描述：	60V 单个 N 通道 HEXFET Power MOSFET, 采用 Micro 3封装
文件：	总11页 (文件大小：205K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 97448A

IRLML2060TRPbF

HEXFET^®Power MOSFET

V_DS

V_{GS Max}

± 16

R_{DS(on) max}

(@V_GS= 10V)

480

640



R_{DS(on) max}

(@V_GS= 4.5V)

Micro3 (SOT-23)



IRLML2060TRPbF

Application(s)

Load/ System Switch

Features and Benefits

Features

Benefits

Industry-standard pinout

Multi-vendor compatibility

results in Easier manufacturing

Compatible with existing Surface Mount Techniques

RoHS compliant containing no lead, no bromide and no halogen

MSL1



Environmentally friendly

Increased reliability

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

Drain-Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

1.2

0.93

4.8

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_A= 70°C

1.25

0.80

0.01

± 16

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

T_J,T_STG

-55 to + 150

Junction and Storage Temperature Range

°C

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

100

Units

R_JA

Junction-to-Ambient

°C/W

R_JA

–––

Junction-to-Ambient (t<10s)

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

Notes through are on page 10

www.irf.com

03/09/12

IRLML2060TRPbF

Electric Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

–––

0.06

356

475

–––

7.5

–––

480

640

2.5

V_GS= 0V, I_D= 250μA



V_(BR)DSS/ T_J

Breakdown Voltage Temp. Coefficient

–––

1.0

V/°C Reference to 25°C, I_D= 5.0mA

V_GS= 10V, I_D= 1.2A

R_DS(on)

Static Drain-to-Source On-Resistance

Gate Threshold Voltage



V_GS= 4.5V, I_D= 0.96A

_DS= V_GS, I_D= 25μA

V_DS= 60V, V_GS= 0V

_DS= 60V, V_GS= 0V, T_J= 125°C

V_GS= 16V

_GS= -16V

V_GS(th)

I_DSS

–––

1.6

Drain-to-Source Leakage Current

μA

150

100

-100

–––

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Internal Gate Resistance

Forward Transconductance

Total Gate Charge

R_G



gfs

Q_g

–––

0.67

0.18

0.40

4.9

V_DS= 25V, I_D= 1.2A

I_D= 1.2A

–––

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

V_DS= 30V

V_GS= 4.5V

V_DD= 30V

Rise Time

3.8

I_D= 1.2A

t_d(off)

t_f

Turn-Off Delay Time

3.7

R_G= 6.8

V_GS= 4.5V

Fall Time

2.8

C_iss

C_oss

C_rss

Input Capacitance

V_GS= 0V

Output Capacitance

V_DS= 25V

Reverse Transfer Capacitance

6.6

ƒ = 1.0MHz

Source - Drain Ratings and Characteristics

Symbol

Parameter

Continuous Source Current

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

–––

1.2

(Body Diode)

showing the

integral reverse

I_SM

Pulsed Source Current

–––

4.8

(Body Diode)

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

–––

1.2

T_J= 25°C, I_S= 1.2A, V_GS= 0V

Reverse Recovery Time

Reverse Recovery Charge

ns T_J= 25°C, V_R= 30V, I_F=1.3A

di/dt = 100A/μs

Q_rr

8.3

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IRLML2060TRPbF

VGS

10V

VGS

10V

TOP

8.0V

4.5V

4.0V

3.8V

3.5V

3.3V

3.0V

8.0V

4.5V

4.0V

3.8V

3.5V

3.3V

3.0V

BOTTOM

3.0V

0.1

0.01

0.1

0.01

3.0V

60μs PULSE WIDTH

Tj = 150°C



60μs PULSE WIDTH

Tj = 25°C



0.1

100

1000

0.1

100

1000

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

2.5

2.0

1.5

1.0

0.5

= 1.2A

= 10V

= 150°C

T = 25°C

= 25V



60μs PULSE WIDTH

0.1

-60 -40 -20

20 40 60 80 100 120140 160

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

vs. Temperature

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IRLML2060TRPbF

1000

14.0

12.0

10.0

8.0

= 0V,

= C

f = 1 MHZ

I = 1.2A

+ C , C

SHORTED

iss

= C

rss

oss

= C + C

= 48V

= 30V

= 12V

100

iss

oss

6.0

rss

4.0

2.0

0.0

, Drain-to-Source Voltage (V)

100

0.0

0.5

1.0

1.5

2.0

Q , Total Gate Charge (nC)

Fig 5. Typical Capacitance vs.

Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

100

OPERATION IN THIS AREA

LIMITED BY R

(on)

= 150°C

100μsec

1msec

= 25°C

10msec

0.1

0.01

= 25°C

Tj = 150°C

Single Pulse

= 0V

0.1

0.5

0.6

0.7

0.8

0.9

1.0

1.1

100

, Source-to-Drain Voltage (V)

, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRLML2060TRPbF

1.2

1.0

0.8

0.6

0.4

0.2

0.0

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width µs

Duty Factor 

Fig 10a. Switching Time Test Circuit

90%

100

125

150

, Ambient Temperature (°C)

10%

Fig 9. Maximum Drain Current vs.

Ambient Temperature

d(on)

d(off)

Fig 10b. Switching Time Waveforms

1000

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

0.1

Notes:

SINGLE PULSE

( THERMAL RESPONSE )

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + T

0.01

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

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IRLML2060TRPbF

1000

2000

1500

1000

500

= 1.2A

800

600

400

200

= 125°C

Vgs = 10V

Vgs = 4.5V

= 25°C

I , Drain Current (A)

Gate -to -Source Voltage (V)

GS,

Fig 13. Typical On-Resistance vs.

Fig 12. Typical On-Resistance vs.

Drain Current

Gate Voltage

Current Regulator

Same Type as D.U.T.

50K

.2F

12V

.3F

V_GS

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 14a. Basic Gate Charge Waveform

Fig 14b. Gate Charge Test Circuit

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IRLML2060TRPbF

2.8

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

100

= 250μA

= 25μA

-75 -50 -25

25 50 75 100 125 150

100

1000

10000 100000

T , Temperature ( °C )

Time (sec)

Fig 16. Typical Power vs. Time

Fig 15. Typical Threshold Voltage vs.

Junction Temperature

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IRLML2060TRPbF

Micro3 (SOT-23) Package Outline

Dimensions are shown in millimeters (inches)

DIMENSIONS

MILLIMETERS

INCHES

SYMBOL

MIN

0.89

0.01

0.88

0.30

0.08

2.80

2.10

1.20

0.95

1.90

0.40

0.54

0.25

MAX

1.12

0.10

1.02

0.50

0.20

3.04

2.64

1.40

BSC

0.60

REF

BSC

MIN

MAX

0.0004

0.15 [0.006]

B A

0.10 [0.004]

0.20 [0.008] M

B A

NOTES:

REF

BSC

Recommended Footprint

0.972

0.950

2.742

0.802

1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994

2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

3. CONTROLLING DIMENSION: MILLIMETER.

4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.

5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.

3X L

1.900

6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES

NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS

OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.

7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.

8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.

Micro3 (SOT-23/TO-236AB) Part Marking Information

DATE CODE MARKING INSTRUCTIONS

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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IRLML2060TRPbF

Micro3Tape & Reel Information

Dimensions are shown in millimeters (inches)

2.05 ( .080 )

1.95 ( .077 )

1.6 ( .062 )

1.5 ( .060 )

1.32 ( .051 )

1.12 ( .045 )

1.85 ( .072 )

1.65 ( .065 )

4.1 ( .161 )

3.9 ( .154 )

3.55 ( .139 )

8.3 ( .326 )

3.45 ( .136 )

7.9 ( .312 )

FEED DIRECTION

4.1 ( .161 )

3.9 ( .154 )

0.35 ( .013 )

0.25 ( .010 )

1.1 ( .043 )

0.9 ( .036 )

178.00

( 7.008 )

MAX.

9.90 ( .390 )

8.40 ( .331 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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IRLML2060TRPbF

Orderable part number

Package Type

Micro3 (SOT-23)

Standard Pack

Note

Form

Tape and Reel

Quantity

IRLML2060TRPbF

3000

Qualification information^†

Cons umer^††

(per JEDE C JE S D47F ^†††guidelines )

Qualification level

MS L 1

Moisture Sensitivity Level

RoHS compliant

Micro3 (SOT-23)

(per IPC/JE DEC J-S TD-020D^†††

)

Yes

Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

Higher qualification ratings may be available should the user have such requirements.

Please contact your International Rectifier sales representative for further information:

http://www.irf.com/whoto-call/salesrep/

Applicable version of JEDEC standard at the time of product release.

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Pulse width  400μs; duty cycle  2%.

Surface mounted on 1 in square Cu board.

Refer to application note #AN-994.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 03/12

www.irf.com

IMPORTANT NOTICE

The information given in this document shall in no For further information on the product, technology,

event be regarded as a guarantee of conditions or delivery terms and conditions and prices please

characteristics (“Beschaffenheitsgarantie”) .

contact your nearest Infineon Technologies office

(www.infineon.com).

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized

representatives

Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

IRLML2060 [INFINEON]

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