IRLML0100 [INFINEON]

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;


型号：	IRLML0100
厂家：	Infineon
描述：	The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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PD - 97157

IRLML0100TRPbF

HEXFET^®Power MOSFET

V_DS

100

V_{GS Max}

± 16

R_{DS(on) max}

(@V_GS= 10V)

220

235

R_{DS(on) max}

(@V_GS= 4.5V)

Micro3 (SOT-23)

IRLML0100TRPbF

Application(s)

• Load/ System Switch

Features and Benefits

Features

Benefits

Industry-standard pinout

Multi-vendor compatibility

Easier manufacturing

Environmentally friendly

Increased reliability

Compatible with existing Surface Mount Techniques

results in

RoHS compliant containing no lead, no bromide and no halogen

MSL1

⇒

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

100

Drain-Source Voltage

V_DS

1.6

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

1.3

7.0

1.3

Maximum Power Dissipation

Linear Derating Factor

P_D@T_A= 25°C

P_D@T_A= 70°C

0.8

0.01

± 16

W/°C

Gate-to-Source Voltage

V_GS

-55 to + 150

Junction and Storage Temperature Range

°C

T_J,T_STG

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Ambient

R_θJA

–––

100

°C/W

Junction-to-Ambient (t<10s)

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

Notes through are on page 10

www.irf.com

11/24/09

IRLML0100TRPbF

Electric Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

100

–––

1.0

–––

0.10

190

178

–––

1.3

–––

2.5

0.5

1.2

2.2

2.1

9.0

3.6

290

–––

235

220

2.5

V_GS= 0V, I_D= 250µA

ΔV_(BR)DSS/ΔT_JBreakdown Voltage Temp. Coefficient

V/°C Reference to 25°C, I_D= 1mA

V_GS= 4.5V, I_D= 1.3A

R_DS(on)

Static Drain-to-Source On-Resistance

V_GS= 10V, I_D= 1.6A

V_DS= V_GS, I_D= 25µA

V_GS(th)

I_DSS

Gate Threshold Voltage

–––

5.7

V_DS=100V, V_GS= 0V

V_DS= 100V, V_GS= 0V, T_J= 125°C

V_GS= 16V

Drain-to-Source Leakage Current

µA

250

100

-100

–––

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Internal Gate Resistance

Forward Transconductance

Total Gate Charge

V_GS= -16V

R_G

gfs

Q_g

V_DS= 50V, I_D= 1.6A

I_D= 1.6A

–––

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

V_DS=50V

V_GS= 4.5V

V_DD=50V

Rise Time

I_D= 1.0A

t_d(off)

t_f

Turn-Off Delay Time

R_G= 6.8Ω

V_GS= 4.5V

V_GS= 0V

Fall Time

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

V_DS= 25V

ƒ = 1.0MHz

Reverse Transfer Capacitance

Source - Drain Ratings and Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

I_S

Continuous Source Current

MOSFET symbol

–––

1.1

(Body Diode)

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

–––

7.0

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

–––

1.3

T_J= 25°C, I_S= 1.1A, V_GS= 0V

ns T_J= 25°C, V_R= 50V, I_F=1.1A

nC di/dt = 100A/µs

Q_rr

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IRLML0100TRPbF

100

VGS

≤60µs PULSE WIDTH

Tj = 25°C

≤60µs PULSE WIDTH

Tj = 150°C

TOP

10.0V

4.50V

3.50V

3.30V

3.25V

2.50V

2.35V

2.25V

TOP

10.0V

4.50V

3.50V

3.30V

3.25V

2.50V

2.35V

2.25V

BOTTOM

0.1

0.01

2.25V

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

2.5

2.0

1.5

1.0

0.5

= 1.6A

= 10V

= 150°C

0.1

T = 25°C

= 50V

60µs PULSE WIDTH

≤

0.01

1.5

2.0

2.5

3.0

3.5

-60 -40 -20

20 40 60 80 100120 140 160

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRLML0100TRPbF

10000

= 0V,

f = 1 MHZ

I = 1.6A

= C + C , C SHORTED

iss

gd ds

= 80V

= 50V

= 20V

= C

rss

= C + C

oss

1000

100

iss

oss

rss

100

Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

100

OPERATION IN THIS AREA

LIMITED BY R

(on)

100µsec

= 150°C

1msec

0.1

0.01

0.1

0.01

= 25°C

10msec

Tj = 150°C

Single Pulse

= 0V

0.1

100

0.4

0.6

0.8

1.0

, Drain-to-Source Voltage (V)

, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRLML0100TRPbF

2.0

1.5

1.0

0.5

0.0

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

, Ambient Temperature (°C)

10%

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

d(on)

d(off)

Fig 10b. Switching Time Waveforms

1000

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

0.1

Notes:

SINGLE PULSE

( THERMAL RESPONSE )

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.01

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

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IRLML0100TRPbF

600

270

250

230

210

190

170

= 1.6A

550

500

450

400

350

300

250

200

150

Vgs = 4.5V

= 125°C

= 25°C

Vgs = 10V

I , Drain Current (A)

Gate -to -Source Voltage (V)

GS,

Fig 13. Typical On-Resistance Vs. Drain

Fig 12. Typical On-Resistance Vs. Gate

Current

Voltage

Vds

Vgs

VCC

DUT

Vgs(th)

20K

Qgs1

Qgs2

Qgodr

Qgd

Fig 14a. Basic Gate Charge Waveform

Fig 14b. Gate Charge Test Circuit

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IRLML0100TRPbF

100

2.5

2.0

1.5

1.0

0.5

= 25uA

= 250uA

1E-005 0.0001 0.001

0.01

0.1

-75 -50 -25

25 50 75 100 125 150

Time (sec)

, Temperature ( °C )

Fig 16. Typical Power Vs. Time

Fig 15. Typical Threshold Voltage Vs.

Junction Temperature

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IRLML0100TRPbF

Micro3 (SOT-23) Package Outline

Dimensions are shown in millimeters (inches)

DIMENSIONS

MILLIMETERS

INCHES

SYMBOL

MIN

0.89

0.01

0.88

0.30

0.08

2.80

2.10

1.20

0.95

1.90

0.40

0.54

0.25

MAX

1.12

0.10

1.02

0.50

0.20

3.04

2.64

1.40

BSC

0.60

REF

BSC

MIN

MAX

0.0004

0.15 [0.006]

B A

0.10 [0.004]

0.20 [0.008] M

B A

NOTES:

REF

BSC

Recommended Footprint

0.972

0.950

2.742

0.802

1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994

2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

3. CONTROLLING DIMENSION: MILLIMETER.

3X L

4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.

5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.

1.900

6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES

NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS

OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.

7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.

8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.

Micro3 (SOT-23/TO-236AB) Part Marking Information

Notes: This part marking information applies to devices produced after 02/26/2001

W= (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR

WORK

WE EK

YEAR

Y = YEAR

W = WE E K

2001

2002

2003

2004

2005

2006

2007

2008

2009

2010

PART NUMBER

LOT

CODE

PART NUMBER CODE REFERENCE:

A= IRLML2402

B = IRLML2803

C = IRLML6302

D = IRLML5103

E = IRLML6402

F = IRLML6401

G = IRLML2502

H = IRLML5203

I = IRLML0030

J = IRLML2030

K = IRLML0100

L = IRLML0060

M = IRLML0040

N = IRLML2060

W = (27-52) IF PRECEDED BY ALETTER

WORK

YEAR

WE EK

2001

2002

2003

2004

2005

2006

2007

2008

2009

2010

Note: A l i ne above the work week

(as shown here) indicates Lead - Free.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

www.irf.com

IRLML0100TRPbF

Micro3™ Tape & Reel Information

Dimensions are shown in millimeters (inches)

2.05 ( .080 )

1.95 ( .077 )

1.6 ( .062 )

1.5 ( .060 )

1.32 ( .051 )

1.12 ( .045 )

1.85 ( .072 )

1.65 ( .065 )

4.1 ( .161 )

3.9 ( .154 )

3.55 ( .139 )

8.3 ( .326 )

3.45 ( .136 )

7.9 ( .312 )

FEED DIRECTION

4.1 ( .161 )

3.9 ( .154 )

0.35 ( .013 )

0.25 ( .010 )

1.1 ( .043 )

0.9 ( .036 )

178.00

( 7.008 )

MAX.

9.90 ( .390 )

8.40 ( .331 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

www.irf.com

IRLML0100TRPbF

Orderable part number

Package Type

Micro3

Standard Pack

Note

Form

Tape and Reel

Quantity

IRLML0100TRPbF

3000

Qualification information^†

Cons umer^††

(per JEDEC JESD47F ^†††guidelines )

Qualification level

MS L 1

Moisture Sensitivity Level

RoHS compliant

Micro3

(per IPC/JEDEC J-S T D-020D^†††

)

Yes

Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

Higher qualification ratings may be available should the user have such requirements.

Please contact your International Rectifier sales representative for further information:

http://www.irf.com/whoto-call/salesrep/

Applicable version of JEDEC standard at the time of product release.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Surface mounted on 1 in square Cu board

Refer to application note #AN-994.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.11/2009

www.irf.com

IMPORTANT NOTICE

The information given in this document shall in no For further information on the product, technology,

event be regarded as a guarantee of conditions or delivery terms and conditions and prices please

characteristics (“Beschaffenheitsgarantie”) .

contact your nearest Infineon Technologies office

(www.infineon.com).

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized

representatives

Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

IRLML0100 [INFINEON]

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