IRLML2502PBF-1_15 [INFINEON]

Compatible with Existing Surface Mount Techniques;
IRLML2502PBF-1_15
型号: IRLML2502PBF-1_15
厂家: Infineon    Infineon
描述:

Compatible with Existing Surface Mount Techniques

文件: 总8页 (文件大小:193K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IRLML2502PbF-1  
HEXFET® Power MOSFET  
VDS  
20  
0.045  
8.0  
V
Ω
RDS(on) max  
(@VGS = 4.5V)  
Qg (typical)  
G
S
1
2
nC  
A
3
D
ID  
4.2  
(@TA = 25°C)  
Micro3(SOT-23)  
Features  
Benefits  
Industry-standard pinout SOT-23 Package  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
Multi-Vendor Compatibility  
Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
MSL1, Industrial qualification  
Standard Pack  
Base Part Number  
Package Type  
Micro3 (SOT-23)  
Orderable Part Number  
IRLML2502TRPbF-1  
Form  
Quantity  
3000  
IRLML2502TRPbF-1  
Tape and Reel  
Absolute Maximum Ratings  
Parameter  
Drain- Source Voltage  
Max.  
20  
Units  
V
VDS  
ID @ TA = 25°C  
ID @ TA= 70°C  
IDM  
Continuous Drain Current, VGS @ 4.5V  
Continuous Drain Current, VGS @ 4.5V  
Pulsed Drain Current   
4.2  
3.4  
A
33  
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation  
1.25  
0.8  
W
Power Dissipation  
Linear Derating Factor  
0.01  
± 12  
W/°C  
V
VGS  
Gate-to-Source Voltage  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJA  
Maximum Junction-to-Ambientƒ  
75  
100  
°C/W  
1
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October 28, 2014  
IRLML2502PbF-1  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min.  
20  
Typ.  
–––  
Max. Units  
Conditions  
VGS = 0V, ID = 250uA  
V/°C Reference to 25°C, ID = 1.0mA  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
Breakdown Voltage Temp. Coefficient  
Static Drain-to-Source On-Resistance  
–––  
–––  
V
ΔV(BR)DSS/ΔTJ  
RDS(on)  
–––  
–––  
–––  
0.60  
–––  
5.8  
0.01  
Ω
0.035 0.045  
0.050 0.080  
V
GS = 4.5V, ID = 4.2A  
GS = 2.5V, ID = 3.6A  
V
VGS(th)  
ΔVGS(th)  
gfs  
Gate Threshold Voltage  
–––  
-3.2  
–––  
–––  
–––  
–––  
–––  
8.0  
1.8  
1.7  
7.5  
10  
1.2  
V
VDS = VGS, ID = 250μA  
Gate Threshold Voltage Coefficient  
Forward Transconductance  
Drain-to-Source Leakage Current  
––– mV/°C  
–––  
1.0  
S
VDS = 10V, ID = 4.0A  
VDS = 16V, VGS = 0V  
IDSS  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
μA  
25  
V
DS = 16V, VGS = 0V, TJ = 70°C  
VGS = 12V  
GS = -12V  
IGSS  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
100  
-100  
12  
nA  
nC  
V
Qg  
ID = 4.0A  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
2.7  
VDS = 10V  
2.6  
V
GS = 5.0V  
DD = 10V  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
V
ID = 1.0A  
RG = 6Ω  
RD = 10Ω  
VGS = 0V  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
54  
26  
Ciss  
Coss  
Crss  
Input Capacitance  
740  
90  
pF  
Output Capacitance  
VDS = 15V  
Reverse Transfer Capacitance  
66  
ƒ = 1.0MHz  
Source-Drain Rating and Characteristics  
Parameter  
Min.  
Typ.  
Max. Units  
Conditions  
D
S
IS  
Continuous Source Current  
MOSFET symbol  
–––  
–––  
1.3  
(Body Diode)  
showing the  
A
G
ISM  
Pulsed Source Current  
integral reverse  
–––  
–––  
33  
(Body Diode)  
p-n junction diode.  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
–––  
–––  
–––  
–––  
16  
1.2  
24  
13  
V
TJ = 25°C, IS = 1.3A, VGS = 0V  
ns TJ = 25°C, IF = 1.3A  
di/dt = 100A/μs  
nC  
Qrr  
Reverse Recovery Charge  
8.6  
Notes:  
 Repetitive rating; pulse width limited by  
ƒ Surface mounted on FR-4 board, t 5sec.  
max. junction temperature. ( See fig. 11 )  
‚ Pulse width 300μs; duty cycle 2%.  
2
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October 28, 2014  
IRLML2502PbF-1  
100  
10  
1
100  
10  
1
VGS  
VGS  
TOP  
7.00V  
5.00V  
4.50V  
3.50V  
3.00V  
2.70V  
2.50V  
TOP  
7.00V  
5.00V  
4.50V  
3.50V  
3.00V  
2.70V  
2.50V  
BOTTOM 2.25V  
BOTTOM 2.25V  
2.25V  
2.25V  
20μs PULSE WIDTH  
T = 25 C  
J
20μs PULSE WIDTH  
T = 150 C  
J
°
°
0.1  
1
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2.0  
100  
4.0A  
=
I
D
1.5  
°
T = 25 C  
J
1.0  
0.5  
0.0  
°
T = 150 C  
J
V
= 15V  
DS  
20μs PULSE WIDTH  
V
=4.5V  
GS  
10  
2.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
2.4  
2.8  
3.2 3.6  
4.0  
T , Junction Temperature ( C)  
J
V
, Gate-to-Source Voltage (V)  
GS  
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
3
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October 28, 2014  
IRLML2502PbF-1  
10  
8
1200  
1000  
800  
600  
400  
200  
0
I
D
=
4.0A  
V
= 0V,  
f = 1MHz  
C SHORTED  
ds  
GS  
C
= C + C  
iss  
gs  
gd ,  
V
= 10V  
DS  
C
= C  
rss  
gd  
C
= C + C  
oss  
ds  
gd  
C
iss  
6
4
2
C
oss  
C
rss  
0
0
4
8
12  
16  
1
10  
100  
Q , Total Gate Charge (nC)  
V
, Drain-to-Source Voltage (V)  
G
DS  
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-Source Voltage  
Drain-to-Source Voltage  
1000  
100  
10  
1
OPERATION IN THIS AREA LIMITED  
BY R  
DS(on)  
100  
10  
1
°
T = 150 C  
J
10us  
100us  
1ms  
°
T = 25 C  
J
10ms  
°
T = 25 C  
A
°
T = 150 C  
Single Pulse  
J
V
= 0 V  
GS  
1.2  
0.1  
0.1  
0.4  
0.1  
1
10  
100  
0.6  
0.8  
1.0  
1.4  
V , Drain-to-Source Voltage (V)  
DS  
V
,Source-to-Drain Voltage (V)  
SD  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode  
Forward Voltage  
4
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October 28, 2014  
IRLML2502PbF-1  
4.0  
3.0  
2.0  
1.0  
0.0  
25  
50  
75  
100  
125  
150  
°
T , Case Temperature ( C)  
C
Fig 9. Maximum Drain Current Vs.  
Case Temperature  
1000  
100  
10  
D = 0.50  
0.20  
0.10  
0.05  
P
2
DM  
0.02  
0.01  
t
1
1
SINGLE PULSE  
(THERMAL RESPONSE)  
t
2
Notes:  
1. Duty factor D =  
t / t  
1
2. Peak T = P  
J
x Z  
+ T  
A
DM  
thJA  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t , Rectangular Pulse Duration (sec)  
1
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  
5
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October 28, 2014  
IRLML2502PbF-1  
0.30  
0.20  
0.10  
0.00  
0.05  
0.04  
0.03  
0.02  
VGS = 2.5V  
Id = 4.0A  
VGS = 4.5V  
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0  
0
10  
i
20  
30  
40  
V
Gate -to -Source Voltage ( V )  
, Drain Current ( A )  
GS,  
D
Fig 11. On-Resistance Vs. Gate Voltage  
Fig 12. On-Resistance Vs. Drain Current  
1.3  
1.1  
0.9  
0.7  
ID = 50μA  
ID = 250μA  
0.5  
-75 -50 -25  
0
25 50 75 100 125 150  
T
, Temperature ( °C )  
J
Fig 13. Threshold Voltage Vs. Temperature  
6
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October 28, 2014  
IRLML2502PbF-1  
Micro3 (SOT-23) (Lead-Free) Package Outline  
Dimensions are shown in millimeters (inches)  
S
Y
DIMENSIONS  
M
B
6
MIL L IME T E RS  
INCHES  
O
L
D
5
MIN  
0.89  
0.01  
0.88  
0.30  
0.08  
2.80  
2.10  
1.20  
MAX  
1.12  
0.10  
1.02  
0.50  
0.20  
3.04  
2.64  
1.40  
MIN  
MAX  
.044  
A
A1  
A2  
b
.036  
.0004  
.035  
.0039  
.040  
3
6
.0119  
.0032  
.111  
.0196  
.0078  
.119  
E
c
E1  
B
ccc  
C B A  
D
E
1
2
.083  
.103  
E1  
e
.048  
.055  
0.95 BSC  
1.90 BSC  
0.40 0.60  
0.25 BS C  
0° 8°  
.0375 BSC  
.075 BSC  
.0158 .0236  
.0118 BSC  
0° 8°  
5
e1  
L
e
e1  
L1  
0
aaa  
0.10  
0.20  
0.15  
.004  
.008  
.006  
bbb  
ccc  
4
H
A2  
A
L1  
3X b  
bbb  
A1  
aaa  
C
C
A B  
3 S URF  
0
7
3X L  
RE COMME NDE D FOOT PRINT  
NOTES  
1. DIMENS IONING AND T OLERANCING PER ASME Y14.5M-1994.  
2. DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES.  
3. CONTROLLING DIMENSION: MILLIMETER.  
0.972  
[.038]  
3X  
2.742  
[.1079]  
4
5
6
7
DATUMPLANE H IS LOCATED AT THE MOLD PARTINGLINE.  
DAT U M A AND B T O B E DE T E RMINE D AT DAT UM PLANE H.  
DIME NS IONS D AND E 1 AR E ME AS UR ED AT DAT UM PLANE H.  
DIMENSION L IS THE LEAD LENGTH FOR SOLDERINGTO ASUBSTRATE.  
8. OUT LINE CONFORMS TO JEDEC OUT LINE T O-236AB.  
0.802  
3X  
[.031]  
0.95  
[.0375]  
1.90  
[.075]  
Micro3 (SOT-23 / TO-236AB) Part Marking Information  
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR  
DATE CODE  
PART NUMBER  
WORK  
WE EK  
LEAD FREE  
YEAR  
2011  
Y
W
2001  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
2010  
1
2
3
4
5
6
7
8
9
0
01  
02  
03  
04  
A
B
C
D
2012  
2013  
2014  
2015  
2016  
2017  
2018  
2019  
2020  
INDUSTRIAL VERSION  
Cu WIR E  
HALOGEN FREE  
LOT CODE  
X = PART NUMBER CODE REFERENCE:  
A= IRLML2402  
B = IRLML2803  
C = IRLML6302  
D = IRLML5103  
E = IRLML6402  
F = IRLML6401  
G= IRLML2502  
H = IRLML5203  
S = IRLML6244  
T = IRLML6246  
U = IRLML6344  
V= IRLML6346  
W = IRFML8244  
X = IRLML2244  
Y = IRLML2246  
Z = IRFML9244  
24  
25  
26  
X
Y
Z
W = (27-52) IF PRECEDED BY A LETTER  
WORK  
YEAR  
Y
WE EK  
W
I
= IRLML0030  
2011  
2001  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
2010  
A
B
C
D
E
27  
28  
29  
30  
A
B
C
D
2012  
2013  
2014  
2015  
2016  
2017  
2018  
2019  
2020  
J = IRLML2030  
K = IRLML0100  
L = IRLML0060  
M= IRLML0040  
N = IRLML2060  
P = IRLML9301  
R = IRLML9303  
F
G
H
J
K
50  
51  
52  
X
Y
Z
Note: A line above the work week  
(as shown here) indicates Lead- Free.  
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  
7
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October 28, 2014  
IRLML2502PbF-1  
Micro3Tape & Reel Information (Dimensions are shown in millimeters (inches))  
2.05 ( .080 )  
1.95 ( .077 )  
1.6 ( .062 )  
1.5 ( .060 )  
1.32 ( .051 )  
1.12 ( .045 )  
1.85 ( .072 )  
1.65 ( .065 )  
4.1 ( .161 )  
3.9 ( .154 )  
TR  
3.55 ( .139 )  
3.45 ( .136 )  
8.3 ( .326 )  
7.9 ( .312 )  
FEED DIRECTION  
4.1 ( .161 )  
3.9 ( .154 )  
0.35 ( .013 )  
0.25 ( .010 )  
1.1 ( .043 )  
0.9 ( .036 )  
178.00  
( 7.008 )  
MAX.  
9.90 ( .390 )  
8.40 ( .331 )  
NOTES:  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
Note: For the most current drawing please refer to IR website at : http://www.irf.com/package/  
Qualification information†  
Industrial  
(per JEDEC JESD47F†† guidelines)  
Qualification level  
MS L 1  
Micro3 (SOT-23)  
Moisture Sensitivity Level  
RoHS compliant  
(per JEDEC J-STD-020D††  
Yes  
)
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability  
†† Applicable version of JEDEC standard at the time of product release  
Revision History  
Date  
Comment  
10/28/2014  
Updated partmarking to reflect Industrial partmarking on page 7.  
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA  
To contact International Rectifier, please visit http://www.irf.com/whoto-call/  
8
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October 28, 2014  

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