IRLML6302 [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRLML6302 |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 93755
IRLML6402
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
D
VDSS = -20V
G
RDS(on) = 0.065Ω
S
Description
These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in battery and
load management.
Micro3
Athermallyenhancedlargepadleadframehasbeenincorporated
into the standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This package,
dubbed the Micro3 , is ideal for applications where printed
circuit board space is at a premium. The low profile (<1.1mm)
of the Micro3 allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
The thermal resistance and power dissipation are the best
available.
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-20
Units
V
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-3.7
-2.2
A
-22
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
1.3
W
Power Dissipation
0.8
Linear Derating Factor
0.01
W/°C
mJ
V
EAS
Single Pulse Avalanche Energy
Gate-to-Source Voltage
11
VGS
± 12
-55 to + 150
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
75
100
°C/W
www.irf.com
1
8/13/99
IRLML6402
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-20 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.009 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.050 0.065
––– 0.080 0.135
-0.40 -0.55 -0.95
6.0 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
VGS = -4.5V, ID = -3.7A
VGS = -2.5V, ID = -3.1A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -3.7A
VDS = -20V, VGS = 0V
VDS = -20V, VGS = 0V, TJ = 70°C
VGS = -12V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 12V
Qg
––– 8.0
12
ID = -3.7A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 1.2 1.8
––– 2.8 4.2
––– 350 –––
––– 48 –––
––– 588 –––
––– 381 –––
––– 633 –––
––– 145 –––
––– 110 –––
nC VDS = -10V
VGS = -5.0V
VDD = -10V
ID = -3.7A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 89Ω
RD = 2.7Ω
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
Output Capacitance
pF
VDS = -10V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
-1.3
-22
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– -1.2
V
TJ = 25°C, IS = -1.0A, VGS = 0V
––– 29
––– 11
43
17
ns
TJ = 25°C, IF = -1.0A
Qrr
nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Starting TJ = 25°C, L = 1.65mH
RG = 25Ω, IAS = -3.7A.
** For recommended footprint and soldering techniques refer to application note #AN-994.
2
www.irf.com
IRLML6402
100
10
1
100
10
1
VGS
VGS
TOP
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
TOP
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
BOTTOM -2.25V
-2.25V
-2.25V
20µs PULSE WIDTH
°
T = 25 C
J
20µs PULSE WIDTH
°
T = 150 C
J
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
1.5
1.0
0.5
0.0
-3.7A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= -15V
DS
20µs PULSE WIDTH
V
= -4.5V
GS
10
2.0
3.0
4.0
5.0
6.0 7.0
8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRLML6402
1000
10
8
I
D
= -3.7A
V
= 0V,
f = 1 MHZ
GS
C
= C + C
,
C
ds
SHORTED
iss
gs
gd
V
=-10V
DS
C
= C
rss
gd
800
C
= C + C
ds gd
oss
Ciss
600
6
400
4
Coss
200
2
Crss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
0
0
3
6
9
12
10
100
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
10
100us
1ms
°
T = 150 C
J
1
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.1
0.1
0.2
1
10
100
0.4
0.6
0.8
1.0
1.2
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRLML6402
4.0
3.0
2.0
1.0
0.0
25
20
15
10
5
I
D
TOP
-1.7A
-3.0A
BOTTOM -3.7A
0
25
50
T
75
100
125
°
150
25
50
75
100
125
150
°
, Case Temperature ( C)
Starting T , Junction Temperature ( C)
C
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Maximum Avalanche Energy
Case Temperature
Vs. Drain Current
1000
100
10
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
t
1
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLML6402
0.20
0.16
0.12
0.08
0.04
0.00
0.14
0.12
0.10
0.08
0.06
0.04
0.02
VGS = -2.5V
Id = -3.7A
VGS = -4.5V
2.0
3.0
4.0
5.0
6.0
7.0
0
5
10
15
20
25
30
-V
Gate -to -Source Voltage ( V )
-I , Drain Current ( A )
GS,
D
Fig 12. Typical On-Resistance Vs.
Fig 13. Typical On-Resistance Vs.
Gate Voltage
Drain Current
6
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IRLML6402
Package Outline
Micro3
Dimensions are shown in millimeters (inches)
D
INCH ES
M IN MAX
M ILLIM ETERS
LEAD ASSIG NM ENTS
D IM
3
- B -
M IN
0.82
M AX
1.11
1 - G ATE
2 - SO URCE
3 - DR AIN
A
.032
.001
.015
.004
.105
.044
.004
.021
.006
.120
A1
B
0.02
0.38
0.10
2.67
0.10
0.54
0.15
3.05
3
3
H
E
C
D
e
- A
-
0.20 ( .008 )
M
A
M
1
2
.0750 BASIC
.0375 BASIC
1.90 BASIC
0.95 BASIC
e1
E
.047
.083
.005
0°
.055
.098
.010
8°
1.20
2.10
0.13
0°
1.40
e
H
L
2.50
0.25
8°
e1
θ
θ
A
M INIM UM RECO M MEN DED FO O TPR INT
- C -
B
0.80 ( .031 )
3X
0.008 (.003)
A1
S
C
L
3X
0.10 (.004)
0.90
( .035 )
3X
3X
3X
M
C
A
S
B
2.00
( .079 )
N OTES:
1. DIM EN SIO NING & TOLERANCIN G PER AN SI Y14.5M -1982.
2. CO NTR O LLIN G DIM ENSIO N : IN CH.
0.95 ( .037 )
2X
DIM EN SIO NS DO NO T IN CLU DE M O LD FLASH .
3
Part Marking Information
Micro3
EXAM PLE : TH IS IS AN IR LM L6302
W O R K
W EEK
W O RK
W EEK
YEAR
Y
W
YEAR
Y
W
DATE
CO DE
PAR T NU M BER
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
27
28
29
30
A
B
C
D
2 001
2 002
2 003
1 994
1 995
1 996
1 997
1 998
1 999
2 000
1
01
02
03
04
A
1C
YW
B
C
D
E
F
G
H
J
2
3
4
5
6
7
8
9
0
B
C
D
Y
= YEAR C O D E
= W EEK CO D E
W
T O P
K
50
51
52
X
Y
Z
24
25
26
X
Y
Z
PAR T N U M BER EXAM PLES:
1A = IR LM L2402
DATE C O D E EXAM PLES:
YW W = 9503 = 5C
1B = IR LM L2803
YW W = 9532 = EF
1C = IR LM L6302
1D = IR LM L5103
W O R K W EEK
= (1 -26 ) IF PR ECED ED BY L AST D IG IT O F C ALEN DER YEAR
W O R K W EEK = ( 27-52) IF PR ECED ED BY LETTER
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7
IRLML6402
Tape & Reel Information
Micro3
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
TR
3.55 ( .139 )
3.45 ( .136 )
8.3 ( .326 )
7.9 ( .312 )
FEED D IR ECTIO N
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
M AX.
9.90 ( .390 )
8.40 ( .331 )
N O TES:
1. CO N TRO LLIN G DIM ENSIO N : M ILLIM ETER .
2. O UT LIN E C O NFO R M S TO EIA-481 & EIA-541.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice. 8/99
8
www.irf.com
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