IRLML6344PBF [INFINEON]
Industry-standard SOT-23 Package;型号: | IRLML6344PBF |
厂家: | Infineon |
描述: | Industry-standard SOT-23 Package |
文件: | 总10页 (文件大小:210K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IRLML6344TRPbF
HEXFET® Power MOSFET
VDS
30
V
V
G
S
1
2
VGS Max
± 12
RDS(on) max
(@VGS = 4.5V)
3
D
29
37
mΩ
mΩ
TM
Micro3 (SOT-23)
RDS(on) max
(@VGS = 2.5V)
IRLML6344TRPbF
Application(s)
• Load/ System Switch
Features and Benefits
Benefits
Low RDSon (<29m )
Ω
Lower Conduction Losses
Multi-vendor compatibility
Environmentally friendly
Increased Reliability
Industry-standard SOT-23 Package
results in
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer Qualification
Standard Pack
Base Part Number
Orderable Part Number
Package Type
Form
Quantity
™
IRLML6344TRPbF
Micro3 (SOT-23)
Tape and Reel
3000
IRLML6344TRPbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
V
VDS
30
5.0
4.0
25
Drain-Source Voltage
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
PD @TA = 25°C
PD @TA = 70°C
1.3
0.8
0.01
± 12
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
W
W/°C
V
VGS
Gate-to-Source Voltage
TJ, TSTG
-55 to + 150
Junction and Storage Temperature Range
°C
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
100
Units
Rθ
Junction-to-Ambient
JA
°C/W
Rθ
–––
99
JA
Junction-to-Ambient (t<10s)
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
1
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IRLML6344TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
0.02
22
–––
–––
29
V
VGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
–––
–––
0.5
V/°C Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 5.0A
RDS(on)
mΩ
Static Drain-to-Source On-Resistance
27
37
VGS = 2.5V, ID = 4.0A
VGS(th)
IDSS
Gate Threshold Voltage
0.8
–––
–––
–––
–––
1.7
–––
6.8
0.3
2.4
4.2
5.6
22
1.1
V
VDS = VGS, ID = 10μA
–––
–––
–––
–––
–––
19
1.0
VDS =24V, VGS = 0V
Drain-to-Source Leakage Current
μA
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
VGS = 12V
GS = -12V
nA
V
RG
Ω
gfs
Qg
S
VDS = 10V, ID = 5.0A
ID = 5.0A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ns
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
VDS =15V
VGS = 4.5V
VDD =15V
Rise Time
ID = 1.0A
Ω
RG = 6.8
td(off)
tf
Turn-Off Delay Time
Fall Time
9.1
650
65
VGS = 4.5V
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
pF
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
46
ƒ = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
D
–––
–––
–––
1.3
(Body Diode)
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
–––
25
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
10
1.2
15
V
TJ = 25°C, IS = 5.0A, VGS = 0V
ns TJ = 25°C, VR = 15V, IF=1.3A
Qrr
3.8
5.7
nC di/dt = 100A/μs
Notes through are on page 10
2
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IRLML6344TRPbF
100
10
1
100
10
1
VGS
10V
VGS
10V
TOP
TOP
4.5V
2.5V
2.0V
1.9V
1.7V
1.5V
1.4V
4.5V
2.5V
2.0V
1.9V
1.7V
1.5V
1.4V
BOTTOM
BOTTOM
1.4V
1.4V
1
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 150°C
Tj = 25°C
0.1
0.1
0.1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
2.0
1.5
1.0
0.5
I
= 5.0A
D
V
= 4.5V
GS
T
= 150°C
J
1
T
= 25°C
V
J
= 15V
DS
≤60μs PULSE WIDTH
0.1
1.0
1.5
2.0
2.5
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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IRLML6344TRPbF
14.0
12.0
10.0
8.0
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
GS
I = 5.0A
D
V
= 24V
= 15V
= 6.0V
C
C
C
+ C , C
SHORTED
ds
DS
iss
gs
gd
= C
V
rss
oss
gd
= C + C
DS
V
ds
gd
DS
C
iss
6.0
C
C
oss
rss
4.0
2.0
0.0
10
0.0
4.0
Q
8.0
12.0
16.0
20.0
1
10
, Drain-to-Source Voltage (V)
100
, Total Gate Charge (nC)
V
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
100
10
1
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1msec
T
= 150°C
J
100μsec
1
T
= 25°C
0.1
0.01
J
T
= 25°C
A
Tj = 150°C
Single Pulse
10msec
10
V
= 0V
1.0
GS
0.1
0.1
1
100
0.4
0.5
V
0.6
0.7
0.8
0.9
1.1
V
, Drain-to-Source Voltage (V)
DS
, Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRLML6344TRPbF
5.0
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
T
, Ambient Temperature (°C)
A
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
1000
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
0.01
SINGLE PULSE
( THERMAL RESPONSE )
A
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
5
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IRLML6344TRPbF
70
60
50
40
30
20
10
80
60
40
20
0
I
= 5.0A
D
Vgs = 2.5V
T
= 125°C
J
Vgs = 4.5V
T
= 25°C
J
0
1
2
3
4
5
6
7
8
9
10 11 12
0
10
20
30
40
I , Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Typical On-Resistance Vs. Drain
Fig 12. Typical On-Resistance Vs. Gate
Current
Voltage
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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IRLML6344TRPbF
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
80
60
40
20
0
I
I
= 10μA
D
D
= 250μA
1E-005 0.0001 0.001
0.01
0.1
1
10
-75 -50 -25
0
25 50 75 100 125 150
Time (sec)
T , Temperature ( °C )
J
Fig 16. Typical Power Vs. Time
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
7
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IRLML6344TRPbF
Micro3™(SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
A
5
6
MILLIMETERS
INCHES
SYMBOL
D
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
MAX
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
MIN
MAX
A
A1
A2
b
c
D
E
E1
e
A
0.0004
A2
C
3
E
6
E1
0.15 [0.006]
M
C
B A
1
2
0.10 [0.004]
C
A1
3X
b
e
0.20 [0.008] M
C
B A
B
5
NOTES:
e1
e1
L
L1
L2
H
4
L1
REF
BSC
8
Recommended Footprint
c
0
0.972
0.950
2.742
L2
0.802
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
3X L
7
1.900
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
Micro3™(SOT-23) Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
DATE CODE MARKING INSTRUCTIONS
DAT E CODE
PART NUMBER
LEAD FREE
WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
WORK
WE E K
YEAR
Y
W
2011 2001
2012 2002
2013 2003
2014 2004
2015 2005
2016 2006
2017 2007
2018 2008
2019 2009
2020 2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
Cu WIRE
HALOGEN FREE
LOT CODE
X = PART NUMBER CODE REFERENCE:
A= IRLML2402
B = IRLML2803
C = IRLML6302
D = IRLML5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRLML5203
S = IRLML6244
T = IRLML6246
U = IRLML6344
V= IRLML6346
W = IRFML8244
X = IRLML2244
Y = IRLML2246
Z = IRFML9244
24
25
26
X
Y
Z
WW = (27-52) IF PRECEDED BY ALETTER
WORK
I
= IRLML0030
YEAR
Y
WE E K
W
J = IRLML2030
K = IRLML0100
L = IRLML0060
M= IRLML0040
N = IRLML2060
P = IRLML9301
R = IRLML9303
2011 2001
2012 2002
2013 2003
2014 2004
2015 2005
2016 2006
2017 2007
2018 2008
2019 2009
2020 2010
A
B
C
D
E
27
28
29
30
A
B
C
D
F
G
H
J
Note: A line above the work week
(as s hown here) indicates Lead - F ree.
K
50
51
52
X
Y
Z
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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December 19, 2014
IRLML6344TRPbF
Micro3™(SOT-23) Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
TR
3.55 ( .139 )
3.45 ( .136 )
8.3 ( .326 )
7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
9
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IRLML6344TRPbF
Qualification information†
Consumer††
(per JEDEC JESD47F ††† guidelines )
Qualification level
MSL1
Moisture Sensitivity Level
RoHS compliant
Micro3™(SOT-23)
(per IPC/JEDEC J-STD-020D†††
Yes
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board
Refer to application note #AN-994.
Revision History
Date
Comment
•
•
•
Formatted the data sheet using the IR Corporate template.
Updated part marking on page 8.
12/19/2014
Corrected Typical Output curve Fig.2 on page 3 (used to be exact same as Fig.1)
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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December 19, 2014
相关型号:
IRLML6346
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
IRLML6346TRPBF
Industry-standard SOT-23 Package MSL1, Consumer Qualification Multi-vendor compatibility
TYSEMI
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