IRLML6346TRPBF [TYSEMI]
Industry-standard SOT-23 Package MSL1, Consumer Qualification Multi-vendor compatibility; 工业标准SOT- 23封装MSL1 ，消费者资质多厂商兼容性
| 型号： | IRLML6346TRPBF |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Industry-standard SOT-23 Package MSL1, Consumer Qualification Multi-vendor compatibility |
| 文件： | 总2页 (文件大小：327K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
IRLML6346TRPbF
HEXFET® Power MOSFET
VDS
30
V
V
VGS Max
± 12
RDS(on) max
(@VGS = 4.5V)
63
80
m
TM
RDS(on) max
(@VGS = 2.5V)
Micro3 (SOT-23)
m
IRLML6346TRPbF
Application(s)
Load/ System Switch
Features and Benefits
Features
Benefits
Industry-standard SOT-23 Package
results in Multi-vendor compatibility
Environmentally friendly
Increased Reliability
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer Qualification
Absolute Maximum Ratings
Symbol
Parameter
Max.
30
Units
V
VDS
Drain-Source Voltage
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
3.4
2.7
A
17
PD @TA = 25°C
PD @TA = 70°C
1.3
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
W
0.8
0.01
W/°C
V
VGS
± 12
-55 to + 150
Gate-to-Source Voltage
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
100
Units
RJA
Junction-to-Ambient
°C/W
RJA
–––
99
Junction-to-Ambient (t<10s)
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Product specification
IRLML6346TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
0.02
46
–––
–––
63
V
VGS = 0V, ID = 250μA
V(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
–––
–––
0.5
V/°C Reference to 25°C, ID = 1mA
GS = 4.5V, ID = 3.4A
V
RDS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
m
59
80
VGS = 2.5V, ID = 2.7A
VDS = VGS, ID = 10μA
VDS =24V, VGS = 0V
VGS(th)
IDSS
0.8
–––
–––
–––
–––
3.9
–––
2.9
0.13
1.1
3.3
4.0
12
1.1
V
–––
–––
–––
–––
–––
9.5
1.0
Drain-to-Source Leakage Current
μA
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
VGS = 12V
VGS = -12V
nA
RG
gfs
Qg
S
VDS = 10V, ID = 3.4A
ID = 3.4A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
VDS =15V
nC
ns
pF
VGS = 4.5V
VDD =15V
Rise Time
ID = 1.0A
td(off)
tf
Turn-Off Delay Time
RG = 6.8
VGS = 4.5V
Fall Time
4.9
270
32
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
Output Capacitance
VDS = 24V
Reverse Transfer Capacitance
21
ƒ = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
D
–––
–––
–––
1.3
(Body Diode)
showing the
A
G
ISM
Pulsed Source Current
integral reverse
–––
17
S
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
8.8
2.7
1.2
13
V
TJ = 25°C, IS = 3.4A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
ns TJ = 25°C, VR = 24V, IF=1.3A
di/dt = 100A/μs
nC
Qrr
4.1
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