IRLML6401PBF_10 [INFINEON]
Ultra Low On-Resistance, P-Channel MOSFET, SOT-23 Footprint; 超低导通电阻， P沟道MOSFET ， SOT- 23的脚印
| 型号： | IRLML6401PBF_10 |
| 厂家： | 
Infineon |
| 描述： | Ultra Low On-Resistance, P-Channel MOSFET, SOT-23 Footprint |
| 文件： | 总8页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94891B
IRLML6401PbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
VDSS = -12V
RDS(on) = 0.05Ω
l 1.8V Gate Rated
l Lead-Free
l Halogen-Free
Description
These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET®
power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in battery and
load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce a
HEXFETPowerMOSFETwiththeindustry'ssmallestfootprint.
This package, dubbed the Micro3™, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
Micro3™
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-12
Units
V
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-4.3
-3.4
A
-34
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
1.3
W
Power Dissipation
0.8
Linear Derating Factor
0.01
W/°C
mJ
V
EAS
Single Pulse Avalanche Energy
Gate-to-Source Voltage
33
VGS
± 8.0
-55 to + 150
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
75
100
°C/W
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1
05/13/10
IRLML6401PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
-12 ––– –––
Conditions
VGS = 0V, ID = -250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.007 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.050
––– 0.085
––– 0.125
-0.40 -0.55 -0.95
8.6 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
VGS = -4.5V, ID = -4.3A
Ω
RDS(on)
Static Drain-to-Source On-Resistance
VGS = -2.5V, ID = -2.5A
VGS = -1.8V, ID = -2.0A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -4.3A
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
VDS = -12V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = -9.6V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -8.0V
IGSS
VGS = 8.0V
ID = -4.3A
Qg
––– 10
15
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 1.4 2.1
––– 2.6 3.9
––– 11 –––
––– 32 –––
––– 250 –––
––– 210 –––
––– 830 –––
––– 180 –––
––– 125 –––
nC VDS = -10V
VGS = -5.0V
VDD = -6.0V
ns
ID = -1.0A
td(off)
tf
Turn-Off Delay Time
Fall Time
RD = 6.0Ω
RG = 89Ω
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF VDS = -10V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
S
IS
MOSFET symbol
showing the
-1.3
-34
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– -1.2
V
TJ = 25°C, IS = -1.3A, VGS = 0V
––– 22
––– 8.0
33
12
ns
TJ = 25°C, IF = -1.3A
Qrr
nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Starting TJ = 25°C, L = 3.5mH
RG = 25Ω, IAS = -4.3A.
2
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IRLML6401PbF
100
10
100
10
VGS
VGS
TOP
-7.0V
-5.0V
-4.5V
-3.0V
-2.5V
- 1.8V
-1.5V
TOP
-7.0V
-5.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.0V
BOTTOM -1.0V
1
1
-1.0V
-1.0V
0.1
0.01
0.1
0.01
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
100.0
10.0
1.0
-4.3A
=
I
D
T
= 25°C
J
1.5
T
= 150°C
J
1.0
0.5
0.0
V
= -12V
DS
20µs PULSE WIDTH
V
=-4.5V
GS
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
1.0
1.5
2.0
2.5
3.0
3.5
4.0
T , Junction Temperature ( C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRLML6401PbF
10
8
1200
I
D
=
-4.3A
V
C
= 0V,
f = 1 MHZ
GS
= C + C
,
C
ds
SHORTED
V
=-10V
iss
gs
gd
DS
C
= C
1000
800
600
400
200
0
rss
gd
C
= C + C
oss
ds
gd
Ciss
6
4
Coss
Crss
2
0
0
4
8
12
16
1
10
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
1
10us
100us
1ms
°
T = 150 C
J
°
T = 25 C
J
1
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
0.1
0.6
1.0
1.4
1.8
0.1
1
10
100
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRLML6401PbF
5.0
4.0
3.0
2.0
1.0
0.0
80
60
40
20
0
I
D
TOP
-1.9A
-3.4A
BOTTOM -4.3A
25
50
75
100
125
150
25
50
75
100
125
150
°
°
Starting T , Junction Temperature ( C)
T , Case Temperature ( C)
J
C
Fig 9. Maximum Drain Current Vs.
Fig 10. Maximum Avalanche Energy
Case Temperature
Vs. Drain Current
1000
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLML6401PbF
0.10
0.09
0.08
0.07
0.06
0.20
0.15
0.10
0.05
0.00
VGS = -1.8V
VGS = -2.5V
0.05
Id = -4.3A
VGS = -4.5V
0.04
0.03
0.02
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0
10
20
30
40
-V
Gate -to -Source Voltage ( V )
GS,
-I , Drain Current ( A )
D
Fig 12. Typical On-Resistance Vs.
Fig 13. Typical On-Resistance Vs.
Gate Voltage
Drain Current
0.8
0.7
0.6
0.5
0.4
I
= -250µA
D
0.3
-75 -50 -25
0
25
50
75 100 125 150
T
, Temperature ( °C )
J
Fig 14. Typical Threshold Voltage Vs.
JunctionTemperature
6
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IRLML6401PbF
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
A
5
6
MILLIMETERS
INCHES
SYMBOL
D
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
MAX
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
MIN
MAX
A
A1
A2
b
c
D
E
E1
e
A
0.0004
A2
C
3
E
6
E1
0.15 [0.006]
M
C
B A
1
2
0.10 [0.004]
C
A1
3X
b
e
0.20 [0.008] M
C
B A
B
5
NOTES:
e1
e1
L
L1
L2
H
4
L1
REF
BSC
8
Recommended Footprint
c
0
0.972
0.950
2.742
L2
0.802
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
3X L
7
1.900
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
Micro3 (SOT-23/TO-236AB) Part Marking Information
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRLML6401PbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
TR
3.55 ( .139 )
3.45 ( .136 )
8.3 ( .326 )
7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/2010
8
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相关型号：
IRLML6402GTRPBF
Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3
INFINEON
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