IRLML6402TRPBF-1 [INFINEON]
Small Signal Field-Effect Transistor;
| 型号： | IRLML6402TRPBF-1 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Field-Effect Transistor |
| 文件： | 总8页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRLML6402PbF-1
HEXFET® Power MOSFET
VDS
-20
0.065
8.0
V
Ω
RDS(on) max
(@VGS = -4.5V)
Qg (typical)
G
S
1
2
nC
A
3
D
ID
-3.7
(@TA = 25°C)
Micro3™(SOT-23)
Features
Benefits
Industry-standard pinout SOT-23 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
MSL1, Industrial qualification
Standard Pack
Base Part Number
Package Type
Micro3 (SOT-23)
Orderable Part Number
IRLML6402TRPbF-1
Form
Quantity
3000
IRLML6402TRPbF-1
Tape and Reel
™
AbsoluteMaximumRatings
Parameter
Drain- Source Voltage
Max.
-20
Units
V
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-3.7
-2.2
-22
A
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
1.3
W
Power Dissipation
0.8
Linear Derating Factor
0.01
11
W/°C
mJ
V
EAS
Single Pulse Avalanche Energy
Gate-to-Source Voltage
VGS
± 12
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
75
100
°C/W
1
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 25, 2013
IRLML6402PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-20 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– -0.009 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.050 0.065
––– 0.080 0.135
-0.40 -0.55 -1.2
6.0 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
VGS = -4.5V, ID = -3.7A
VGS = -2.5V, ID = -3.1A
VDS = VGS, ID = -250μA
VDS = -10V, ID = -3.7A
VDS = -20V, VGS = 0V
VDS = -20V, VGS = 0V, TJ = 70°C
VGS = -12V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = 12V
Qg
––– 8.0
12
ID = -3.7A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 1.2 1.8
––– 2.8 4.2
––– 350 –––
––– 48 –––
––– 588 –––
––– 381 –––
––– 633 –––
––– 145 –––
––– 110 –––
nC VDS = -10V
VGS = -5.0V
VDD = -10V
ID = -3.7A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 89Ω
RD = 2.7Ω
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = -10V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
S
IS
MOSFET symbol
showing the
-1.3
-22
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– -1.2
V
TJ = 25°C, IS = -1.0A, VGS = 0V
––– 29
––– 11
43
17
ns
TJ = 25°C, IF = -1.0A
Qrr
nC di/dt = -100A/μs
Notes:
Surface mounted on 1" square single layer 1oz. copper FR4 board,
Repetitive rating; pulse width limited by
max. junction temperature.
steady state.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Starting TJ = 25°C, L = 1.65mH
RG = 25Ω, IAS = -3.7A.
** For recommended footprint and soldering techniques refer to application note #AN-994.
2
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 25, 2013
IRLML6402PbF-1
100
10
1
100
10
1
VGS
VGS
TOP
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
TOP
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM-2.25V
BOTTOM -2.25V
-2.25V
-2.25V
20μs PULSE WIDTH
°
T = 25 C
J
20μs PULSE WIDTH
°
T = 150 C
J
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
1.5
1.0
0.5
0.0
-3.7A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= -15V
DS
20μs PULSE WIDTH
V
=-4.5V
GS
10
2.0
3.0
4.0
5.0
6.0 7.0
8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 25, 2013
IRLML6402PbF-1
1000
800
600
400
200
0
10
8
I
D
= -3.7A
V
C
= 0V,
f = 1 MHZ
GS
= C + C
,
C
ds
SHORTED
iss
gs
gd
V
=-10V
DS
C
= C
rss
gd
C
= C + C
oss
ds gd
Ciss
6
4
Coss
Crss
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
3
6
9
12
1
10
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
10
100us
1ms
°
T = 150 C
J
1
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1.0
0.1
0.1
0.1
0.2
1
10
100
0.4
0.6
0.8
1.2
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 25, 2013
IRLML6402PbF-1
4.0
3.0
2.0
1.0
0.0
25
20
15
10
5
I
D
TOP
-1.7A
-3.0A
BOTTOM -3.7A
0
25
50
75
100
125
150
25
50
75
100
125
150
°
°
T , Case Temperature ( C)
Starting T , Junction Temperature ( C)
C
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Maximum Avalanche Energy
Case Temperature
Vs. Drain Current
1000
100
10
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 25, 2013
IRLML6402PbF-1
0.20
0.16
0.12
0.08
0.04
0.00
0.14
0.12
0.10
0.08
0.06
0.04
0.02
VGS = -2.5V
Id = -3.7A
VGS = -4.5V
2.0
3.0
4.0
5.0
6.0
7.0
0
5
10
15
20
25
30
-V
Gate -to -Source Voltage ( V )
-I , Drain Current ( A )
GS,
D
Fig 12. Typical On-Resistance Vs.
Fig 13. Typical On-Resistance Vs.
Gate Voltage
Drain Current
6
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 25, 2013
IRLML6402PbF-1
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
S
DIMENSIONS
MILLIMETERS INCHES
Y
M
B
O
L
6
D
5
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
MAX
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
MIN
MAX
.044
A
A1
A2
b
.036
.0004
.035
.0039
.040
3
6
.0119
.0032
.111
.0196
.0078
.119
E
c
E1
B
ccc
C B A
D
E
1
2
.083
.048
.103
.055
E1
e
0.95 BSC
1.90 BSC
0.40 0.60
0.25 BSC
0° 8°
.0375 BSC
.075 BSC
.0158 .0236
.0118 BSC
0° 8°
5
e1
L
e
e1
L1
0
aaa
0.10
0.20
0.15
.004
.008
.006
bbb
ccc
4
H
A2
A
L1
3X b
bbb
A1
aaa
C
C
A B
3 SURF
0
7
3X L
RE COMME NDE D FOOT PRINT
NOTES
1. DIMENS IONING AND T OLERANCING PER ASME Y14.5M-1994.
2. DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES.
3. CONTROLLING DIMENSION: MILLIMETER.
0.972
[.038]
3X
2.742
[.1079]
4
5
6
7
DATUMPLANE H IS LOCATED AT THE MOLD PARTINGLINE.
DAT U M A AND B T O B E DE T E RMINE D AT DAT UM PLANE H.
DIME NS IONS D AND E 1 AR E ME AS UR ED AT DAT UM PLANE H.
DIMENSION L IS THE LEAD LENGTH FOR SOLDERINGTO ASUBSTRATE.
8. OUT LINE CONFORMS TO JEDEC OUT LINE T O-236AB.
0.802
3X
[.031]
0.95
[.0375]
1.90
[.075]
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
7
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 25, 2013
IRLML6402PbF-1
Micro3™(SOT-23/TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
TR
3.55 ( .139 )
3.45 ( .136 )
8.3 ( .326 )
7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
™
Micro3 (SOT-23)
Moisture Sensitivity Level
RoHS compliant
(per JEDEC J-STD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visithttp://www.irf.com/whoto-call/
8
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 25, 2013
相关型号：
IRLML9301
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
IRLML9301TRPBF
RoHS compliant containing no lead, no bromide and no halogen Environmentally friendly
TYSEMI
IRLML9303
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
IRLML9303TRPBF
RoHS compliant containing no lead, no bromide and no halogen Environmentally friendly
TYSEMI
©2020 ICPDF网 联系我们和版权申明