IRLML6402TRPBF-1 [INFINEON]

Small Signal Field-Effect Transistor;
IRLML6402TRPBF-1
型号: IRLML6402TRPBF-1
厂家: Infineon    Infineon
描述:

Small Signal Field-Effect Transistor

文件: 总8页 (文件大小:220K)
中文:  中文翻译
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IRLML6402PbF-1  
HEXFET® Power MOSFET  
VDS  
-20  
0.065  
8.0  
V
Ω
RDS(on) max  
(@VGS = -4.5V)  
Qg (typical)  
G
S
1
2
nC  
A
3
D
ID  
-3.7  
(@TA = 25°C)  
Micro3(SOT-23)  
Features  
Benefits  
Industry-standard pinout SOT-23 Package  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
Multi-Vendor Compatibility  
Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
MSL1, Industrial qualification  
Standard Pack  
Base Part Number  
Package Type  
Micro3 (SOT-23)  
Orderable Part Number  
IRLML6402TRPbF-1  
Form  
Quantity  
3000  
IRLML6402TRPbF-1  
Tape and Reel  
AbsoluteMaximumRatings  
Parameter  
Drain- Source Voltage  
Max.  
-20  
Units  
V
VDS  
ID @ TA = 25°C  
ID @ TA= 70°C  
IDM  
Continuous Drain Current, VGS @ -4.5V  
Continuous Drain Current, VGS @ -4.5V  
Pulsed Drain Current   
-3.7  
-2.2  
-22  
A
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation  
1.3  
W
Power Dissipation  
0.8  
Linear Derating Factor  
0.01  
11  
W/°C  
mJ  
V
EAS  
Single Pulse Avalanche Energy„  
Gate-to-Source Voltage  
VGS  
± 12  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJA  
Maximum Junction-to-Ambientƒ  
75  
100  
°C/W  
1
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November 25, 2013  
IRLML6402PbF-1  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
-20 ––– –––  
Conditions  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
V
VGS = 0V, ID = -250μA  
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient  
––– -0.009 ––– V/°C Reference to 25°C, ID = -1mA ‚  
––– 0.050 0.065  
––– 0.080 0.135  
-0.40 -0.55 -1.2  
6.0 ––– –––  
––– ––– -1.0  
––– ––– -25  
––– ––– -100  
––– ––– 100  
VGS = -4.5V, ID = -3.7A ‚  
VGS = -2.5V, ID = -3.1A ‚  
VDS = VGS, ID = -250μA  
VDS = -10V, ID = -3.7A ‚  
VDS = -20V, VGS = 0V  
VDS = -20V, VGS = 0V, TJ = 70°C  
VGS = -12V  
RDS(on)  
Static Drain-to-Source On-Resistance  
Ω
VGS(th)  
gfs  
Gate Threshold Voltage  
V
S
Forward Transconductance  
IDSS  
Drain-to-Source Leakage Current  
µA  
nA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
IGSS  
VGS = 12V  
Qg  
––– 8.0  
12  
ID = -3.7A  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
––– 1.2 1.8  
––– 2.8 4.2  
––– 350 –––  
––– 48 –––  
––– 588 –––  
––– 381 –––  
––– 633 –––  
––– 145 –––  
––– 110 –––  
nC VDS = -10V  
VGS = -5.0V ‚  
VDD = -10V  
ID = -3.7A  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RG = 89Ω  
RD = 2.7Ω  
VGS = 0V  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
pF  
VDS = -10V  
ƒ = 1.0MHz  
Reverse Transfer Capacitance  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
D
S
IS  
MOSFET symbol  
showing the  
-1.3  
-22  
––– –––  
––– –––  
A
G
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
p-n junction diode.  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse RecoveryCharge  
––– ––– -1.2  
V
TJ = 25°C, IS = -1.0A, VGS = 0V ‚  
––– 29  
––– 11  
43  
17  
ns  
TJ = 25°C, IF = -1.0A  
Qrr  
nC di/dt = -100A/μs ‚  
Notes:  
ƒ Surface mounted on 1" square single layer 1oz. copper FR4 board,  
 Repetitive rating; pulse width limited by  
max. junction temperature.  
steady state.  
‚ Pulse width 400μs; duty cycle 2%.  
„ Starting TJ = 25°C, L = 1.65mH  
RG = 25Ω, IAS = -3.7A.  
** For recommended footprint and soldering techniques refer to application note #AN-994.  
2
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November 25, 2013  
IRLML6402PbF-1  
100  
10  
1
100  
10  
1
VGS  
VGS  
TOP  
-7.00V  
-5.00V  
-4.50V  
-3.50V  
-3.00V  
-2.70V  
-2.50V  
TOP  
-7.00V  
-5.00V  
-4.50V  
-3.50V  
-3.00V  
-2.70V  
-2.50V  
BOTTOM-2.25V  
BOTTOM -2.25V  
-2.25V  
-2.25V  
20μs PULSE WIDTH  
°
T = 25 C  
J
20μs PULSE WIDTH  
°
T = 150 C  
J
0.1  
1
10  
100  
0.1  
1
10  
100  
-V , Drain-to-Source Voltage (V)  
DS  
-V , Drain-to-Source Voltage (V)  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
100  
2.0  
1.5  
1.0  
0.5  
0.0  
-3.7A  
=
I
D
°
T = 25 C  
J
°
T = 150 C  
J
V
= -15V  
DS  
20μs PULSE WIDTH  
V
=-4.5V  
GS  
10  
2.0  
3.0  
4.0  
5.0  
6.0 7.0  
8.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
-V , Gate-to-Source Voltage (V)  
GS  
T , Junction Temperature ( C)  
J
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
3
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November 25, 2013  
IRLML6402PbF-1  
1000  
800  
600  
400  
200  
0
10  
8
I
D
= -3.7A  
V
C
= 0V,  
f = 1 MHZ  
GS  
= C + C  
,
C
ds  
SHORTED  
iss  
gs  
gd  
V
=-10V  
DS  
C
= C  
rss  
gd  
C
= C + C  
oss  
ds gd  
Ciss  
6
4
Coss  
Crss  
2
FOR TEST CIRCUIT  
SEE FIGURE 13  
0
0
3
6
9
12  
1
10  
100  
Q , Total Gate Charge (nC)  
G
V
, Drain-to-Source Voltage (V)  
DS  
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-Source Voltage  
Drain-to-Source Voltage  
100  
10  
1
100  
OPERATION IN THIS AREA LIMITED  
BY R  
DS(on)  
10us  
10  
100us  
1ms  
°
T = 150 C  
J
1
°
T = 25 C  
J
10ms  
°
T = 25 C  
C
°
T = 150 C  
Single Pulse  
J
V
= 0 V  
GS  
1.0  
0.1  
0.1  
0.1  
0.2  
1
10  
100  
0.4  
0.6  
0.8  
1.2  
-V , Drain-to-Source Voltage (V)  
DS  
-V ,Source-to-Drain Voltage (V)  
SD  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode  
Forward Voltage  
4
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November 25, 2013  
IRLML6402PbF-1  
4.0  
3.0  
2.0  
1.0  
0.0  
25  
20  
15  
10  
5
I
D
TOP  
-1.7A  
-3.0A  
BOTTOM -3.7A  
0
25  
50  
75  
100  
125  
150  
25  
50  
75  
100  
125  
150  
°
°
T , Case Temperature ( C)  
Starting T , Junction Temperature ( C)  
C
J
Fig 9. Maximum Drain Current Vs.  
Fig 10. Maximum Avalanche Energy  
Case Temperature  
Vs. Drain Current  
1000  
100  
10  
D = 0.50  
0.20  
0.10  
0.05  
P
2
DM  
0.02  
0.01  
t
1
SINGLE PULSE  
(THERMAL RESPONSE)  
1
t
2
Notes:  
1. Duty factor D =  
t / t  
1
2. Peak T =P  
J
x Z  
+ T  
thJA A  
DM  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  
5
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November 25, 2013  
IRLML6402PbF-1  
0.20  
0.16  
0.12  
0.08  
0.04  
0.00  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
VGS = -2.5V  
Id = -3.7A  
VGS = -4.5V  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
0
5
10  
15  
20  
25  
30  
-V  
Gate -to -Source Voltage ( V )  
-I , Drain Current ( A )  
GS,  
D
Fig 12. Typical On-Resistance Vs.  
Fig 13. Typical On-Resistance Vs.  
Gate Voltage  
Drain Current  
6
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November 25, 2013  
IRLML6402PbF-1  
Micro3 (SOT-23) (Lead-Free) Package Outline  
Dimensions are shown in millimeters (inches)  
S
DIMENSIONS  
MILLIMETERS INCHES  
Y
M
B
O
L
6
D
5
MIN  
0.89  
0.01  
0.88  
0.30  
0.08  
2.80  
2.10  
1.20  
MAX  
1.12  
0.10  
1.02  
0.50  
0.20  
3.04  
2.64  
1.40  
MIN  
MAX  
.044  
A
A1  
A2  
b
.036  
.0004  
.035  
.0039  
.040  
3
6
.0119  
.0032  
.111  
.0196  
.0078  
.119  
E
c
E1  
B
ccc  
C B A  
D
E
1
2
.083  
.048  
.103  
.055  
E1  
e
0.95 BSC  
1.90 BSC  
0.40 0.60  
0.25 BSC  
0° 8°  
.0375 BSC  
.075 BSC  
.0158 .0236  
.0118 BSC  
0° 8°  
5
e1  
L
e
e1  
L1  
0
aaa  
0.10  
0.20  
0.15  
.004  
.008  
.006  
bbb  
ccc  
4
H
A2  
A
L1  
3X b  
bbb  
A1  
aaa  
C
C
A B  
3 SURF  
0
7
3X L  
RE COMME NDE D FOOT PRINT  
NOTES  
1. DIMENS IONING AND T OLERANCING PER ASME Y14.5M-1994.  
2. DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES.  
3. CONTROLLING DIMENSION: MILLIMETER.  
0.972  
[.038]  
3X  
2.742  
[.1079]  
4
5
6
7
DATUMPLANE H IS LOCATED AT THE MOLD PARTINGLINE.  
DAT U M A AND B T O B E DE T E RMINE D AT DAT UM PLANE H.  
DIME NS IONS D AND E 1 AR E ME AS UR ED AT DAT UM PLANE H.  
DIMENSION L IS THE LEAD LENGTH FOR SOLDERINGTO ASUBSTRATE.  
8. OUT LINE CONFORMS TO JEDEC OUT LINE T O-236AB.  
0.802  
3X  
[.031]  
0.95  
[.0375]  
1.90  
[.075]  
Micro3 (SOT-23 / TO-236AB) Part Marking Information  
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  
7
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November 25, 2013  
IRLML6402PbF-1  
Micro3(SOT-23/TO-263AB) Tape & Reel Information  
Dimensions are shown in millimeters (inches)  
2.05 ( .080 )  
1.95 ( .077 )  
1.6 ( .062 )  
1.5 ( .060 )  
1.32 ( .051 )  
1.12 ( .045 )  
1.85 ( .072 )  
1.65 ( .065 )  
4.1 ( .161 )  
3.9 ( .154 )  
TR  
3.55 ( .139 )  
3.45 ( .136 )  
8.3 ( .326 )  
7.9 ( .312 )  
FEED DIRECTION  
4.1 ( .161 )  
3.9 ( .154 )  
0.35 ( .013 )  
0.25 ( .010 )  
1.1 ( .043 )  
0.9 ( .036 )  
178.00  
( 7.008 )  
MAX.  
9.90 ( .390 )  
8.40 ( .331 )  
NOTES:  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  
Qualification information†  
Industrial  
(per JEDEC JESD47F†† guidelines)  
Qualification level  
MS L 1  
Micro3 (SOT-23)  
Moisture Sensitivity Level  
RoHS compliant  
(per JEDEC J-STD-020D††  
Yes  
)
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability  
†† Applicable version of JEDEC standard at the time of product release  
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA  
To contact International Rectifier, please visithttp://www.irf.com/whoto-call/  
8
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November 25, 2013  

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