IRLML9301TRPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRLML9301TRPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总10页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96310
IRLML9301TRPbF
HEXFET® Power MOSFET
VDS
-30
V
V
VGS Max
± 20
RDS(on) max
(@VGS = -10V)
64
m
Ω
RDS(on) max
(@VGS = -4.5V)
TM
103
m
Micro3 (SOT-23)
Ω
IRLML9301TRPbF
Application(s)
• System/Load Switch
Features and Benefits
Features
Benefits
Low RDS(on) ( ≤ 64mΩ)
Industry-standard pinout
Lower switching losses
Multi-vendor compatibility
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
results in Easier manufacturing
Environmentally friendly
Increased reliability
⇒
Symbol
Parameter
Drain-Source Voltage
Max.
Units
V
VDS
-30
-3.6
-2.9
-15
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
A
Pulsed Drain Current
PD @TA = 25°C
PD @TA = 70°C
1.3
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
W
0.8
0.01
± 20
W/°C
V
VGS
Gate-to-Source Voltage
TJ, TSTG
-55 to + 150
Junction and Storage Temperature Range
°C
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
100
Units
RθJA
Junction-to-Ambient
°C/W
RθJA
–––
99
Junction-to-Ambient (t<10s)
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 10
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1
05/27/10
IRLML9301TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆
(BR)DSS/ TJ
Breakdown Voltage Temp. Coefficient
-30
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
5.0
–––
0.02
51
–––
–––
64
V
VGS = 0V, ID = -250µA
∆
V
V/°C Reference to 25°C, ID = -1mA
GS = -10V, ID = -3.6A
V
RDS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Ω
m
82
103
-2.4
1
VGS = -4.5V, ID = -2.9A
VDS = VGS, ID = -10µA
VGS(th)
IDSS
–––
–––
–––
–––
–––
12
V
V
DS =-24V, VGS = 0V
Drain-to-Source Leakage Current
µA
nA
150
-100
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
V
GS = 20V
RG
Ω
gfs
Qg
–––
4.8
1.2
2.5
9.6
19
S
VDS = -10V, ID =-3.6A
ID = -3.6A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
VDS =-15V
nC
ns
VGS = -4.5V
V
DD =-15V
Rise Time
ID = -1A
td(off)
tf
Turn-Off Delay Time
16
RG = 6.8Ω
VGS = -4.5V
Fall Time
15
Ciss
Coss
Crss
Input Capacitance
388
93
V
V
GS = 0V
Output Capacitance
pF
DS = -25V
Reverse Transfer Capacitance
65
ƒ = 1.0KHz
Source - Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
D
S
–––
–––
–––
-1.3
(Body Diode)
showing the
G
A
ISM
Pulsed Source Current
integral reverse
–––
-15
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
14
-1.2
21
V
TJ = 25°C, IS = -1.3A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
ns TJ = 25°C, VR = -24V, IF=-1.3A
di/dt = 100A/µs
nC
Qrr
7.2
11
2
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IRLML9301TRPbF
100
10
100
10
1
VGS
-10V
VGS
-10V
TOP
TOP
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
BOTTOM
BOTTOM
1
0.1
0.01
-2.5V
-2.5V
≤60µs PULSE WIDTH Tj = 25°C
≤
60µs PULSE WIDTH Tj = 150°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1.6
1.4
1.1
0.8
0.6
100
10
1
I
= -3.6A
D
V
= -15V
DS
V
= -10V
GS
≤
60µs PULSE WIDTH
T
= 150°C
J
T
= 25°C
J
0.1
-60 -40 -20
0
20 40 60 80 100 120140 160
2.0
2.5
V
3.0
3.5
4.0
4.5
5.0
T
J
, Junction Temperature (°C)
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRLML9301TRPbF
10000
14
12
10
8
V
= 0V,
= C
f = 1 KHZ
GS
I = -3.6A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
= C
rss
oss
gd
V
= -24V
= -15V
DS
= C + C
ds
gd
V
DS
VDS= -6V
1000
100
10
C
iss
6
C
C
oss
rss
4
2
0
1
10
, Drain-to-Source Voltage (V)
100
0
2
4
6
8
10
12
V
Q , Total Gate Charge (nC)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
1msec
T
= 150°C
1
J
T
= 25°C
J
10msec
0.1
0.01
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.3
0.5
0.7
0.9
1.1
0
1
10
100
V
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRLML9301TRPbF
4.2
3.6
3
RD
VDS
VGS
D.U.T.
RG
+VDD
-
2.4
1.8
1.2
0.6
0
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
T
, Ambient Temperature (°C)
A
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
1000
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
Notes:
0.01
0.001
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
SINGLE PULSE
( THERMAL RESPONSE )
A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLML9301TRPbF
180
500
400
300
200
100
0
I
= -3.6A
D
140
100
T
= 125°C
J
Vgs = -4.5V
60
20
Vgs = -10V
T
= 25°C
J
2
4
6
8
10 12 14 16 18 20
0
5
10
15
20
25
30
35
I
, Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Typical On-Resistance Vs. Drain
Fig 12. Typical On-Resistance Vs. Gate
Current
Voltage
Current Regulator
Same Type as D.U.T.
50KΩ
Q
Q
G
.2µF
12V
.3µF
VGS
+
Q
V
GS
GD
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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IRLML9301TRPbF
100
80
60
40
20
0
2.5
2.0
1.5
1.0
0.5
I
= 10uA
D
ID = 25uA
= 250uA
I
D
1E-005 0.0001 0.001 0.01
0.1
1
10
-75 -50 -25
0
25 50 75 100 125 150
Time (sec)
T
, Temperature ( °C )
J
Fig 16. Typical Power Vs. Time
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
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7
IRLML9301TRPbF
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
A
5
6
MILLIMETERS
INCHES
SYMBOL
D
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
MAX
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
MIN
MAX
A
A1
A2
b
c
D
E
E1
e
A
0.0004
A2
C
3
E
6
E1
0.15 [0.006]
M
C
B A
1
2
0.10 [0.004]
C
A1
3X
b
e
0.20 [0.008] M
C
B A
B
5
NOTES:
e1
e1
L
L1
L2
4
H
L1
REF
BSC
8
Recommended Footprint
c
0
0.972
0.950
2.742
L2
0.802
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
3X L
7
1.900
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
Micro3 (SOT-23/TO-236AB) Part Marking Information
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRLML9301TRPbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
TR
3.55 ( .139 )
8.3 ( .326 )
3.45 ( .136 )
7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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9
IRLML9301TRPbF
Orderable part number
Package Type
Micro3
Standard Pack
Note
Form
Tape and Reel
Quantity
IRLML9301TRPbF
3000
Qualification information†
Cons umer††
(per JEDEC JESD47F ††† guidelines )
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
Micro3
(per IPC/JEDEC J-ST D-020D†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board
Refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/2010
10
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