IRLML9301TRPBF [INFINEON]

HEXFET Power MOSFET; HEXFET功率MOSFET
IRLML9301TRPBF
型号: IRLML9301TRPBF
厂家: Infineon    Infineon
描述:

HEXFET Power MOSFET
HEXFET功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管 PC
文件: 总10页 (文件大小:229K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PD - 96310  
IRLML9301TRPbF  
HEXFET® Power MOSFET  
VDS  
-30  
V
V
VGS Max  
± 20  
RDS(on) max  
(@VGS = -10V)  
64  
m
RDS(on) max  
(@VGS = -4.5V)  
TM  
103  
m
Micro3 (SOT-23)  
IRLML9301TRPbF  
Application(s)  
System/Load Switch  
Features and Benefits  
Features  
Benefits  
Low RDS(on) ( 64m)  
Industry-standard pinout  
Lower switching losses  
Multi-vendor compatibility  
Compatible with existing Surface Mount Techniques  
RoHS compliant containing no lead, no bromide and no halogen  
MSL1, Consumer qualification  
results in Easier manufacturing  
Environmentally friendly  
Increased reliability  
Symbol  
Parameter  
Drain-Source Voltage  
Max.  
Units  
V
VDS  
-30  
-3.6  
-2.9  
-15  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
A
Pulsed Drain Current  
PD @TA = 25°C  
PD @TA = 70°C  
1.3  
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
W
0.8  
0.01  
± 20  
W/°C  
V
VGS  
Gate-to-Source Voltage  
TJ, TSTG  
-55 to + 150  
Junction and Storage Temperature Range  
°C  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
100  
Units  
RθJA  
Junction-to-Ambient  
°C/W  
RθJA  
–––  
99  
Junction-to-Ambient (t<10s)  
ORDERING INFORMATION:  
See detailed ordering and shipping information on the last page of this data sheet.  
Notes  through „ are on page 10  
www.irf.com  
1
05/27/10  
IRLML9301TRPbF  
Electric Characteristics @ TJ = 25°C (unless otherwise specified)  
Symbol  
Parameter  
Min. Typ. Max. Units  
Conditions  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
(BR)DSS/ TJ  
Breakdown Voltage Temp. Coefficient  
-30  
–––  
–––  
–––  
-1.3  
–––  
–––  
–––  
–––  
–––  
5.0  
–––  
0.02  
51  
–––  
–––  
64  
V
VGS = 0V, ID = -250µA  
V
V/°C Reference to 25°C, ID = -1mA  
GS = -10V, ID = -3.6A  
V
RDS(on)  
Static Drain-to-Source On-Resistance  
Gate Threshold Voltage  
m
82  
103  
-2.4  
1
VGS = -4.5V, ID = -2.9A  
VDS = VGS, ID = -10µA  
VGS(th)  
IDSS  
–––  
–––  
–––  
–––  
–––  
12  
V
V
DS =-24V, VGS = 0V  
Drain-to-Source Leakage Current  
µA  
nA  
150  
-100  
100  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
VDS = -24V, VGS = 0V, TJ = 125°C  
VGS = -20V  
IGSS  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Internal Gate Resistance  
Forward Transconductance  
Total Gate Charge  
V
GS = 20V  
RG  
gfs  
Qg  
–––  
4.8  
1.2  
2.5  
9.6  
19  
S
VDS = -10V, ID =-3.6A  
ID = -3.6A  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
VDS =-15V  
nC  
ns  
VGS = -4.5V  
V
DD =-15V  
Rise Time  
ID = -1A  
td(off)  
tf  
Turn-Off Delay Time  
16  
RG = 6.8Ω  
VGS = -4.5V  
Fall Time  
15  
Ciss  
Coss  
Crss  
Input Capacitance  
388  
93  
V
V
GS = 0V  
Output Capacitance  
pF  
DS = -25V  
Reverse Transfer Capacitance  
65  
ƒ = 1.0KHz  
Source - Drain Ratings and Characteristics  
Symbol  
Parameter  
Continuous Source Current  
Min. Typ. Max. Units  
Conditions  
MOSFET symbol  
IS  
D
S
–––  
–––  
–––  
-1.3  
(Body Diode)  
showing the  
G
A
ISM  
Pulsed Source Current  
integral reverse  
–––  
-15  
(Body Diode)  
p-n junction diode.  
VSD  
trr  
Diode Forward Voltage  
–––  
–––  
–––  
–––  
14  
-1.2  
21  
V
TJ = 25°C, IS = -1.3A, VGS = 0V  
Reverse Recovery Time  
Reverse Recovery Charge  
ns TJ = 25°C, VR = -24V, IF=-1.3A  
di/dt = 100A/µs  
nC  
Qrr  
7.2  
11  
2
www.irf.com  
IRLML9301TRPbF  
100  
10  
100  
10  
1
VGS  
-10V  
VGS  
-10V  
TOP  
TOP  
-4.5V  
-3.7V  
-3.5V  
-3.3V  
-3.0V  
-2.7V  
-2.5V  
-4.5V  
-3.7V  
-3.5V  
-3.3V  
-3.0V  
-2.7V  
-2.5V  
BOTTOM  
BOTTOM  
1
0.1  
0.01  
-2.5V  
-2.5V  
60µs PULSE WIDTH Tj = 25°C  
60µs PULSE WIDTH Tj = 150°C  
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 2. Typical Output Characteristics  
Fig 1. Typical Output Characteristics  
1.6  
1.4  
1.1  
0.8  
0.6  
100  
10  
1
I
= -3.6A  
D
V
= -15V  
DS  
V
= -10V  
GS  
60µs PULSE WIDTH  
T
= 150°C  
J
T
= 25°C  
J
0.1  
-60 -40 -20  
0
20 40 60 80 100 120140 160  
2.0  
2.5  
V
3.0  
3.5  
4.0  
4.5  
5.0  
T
J
, Junction Temperature (°C)  
, Gate-to-Source Voltage (V)  
GS  
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
www.irf.com  
3
IRLML9301TRPbF  
10000  
14  
12  
10  
8
V
= 0V,  
= C  
f = 1 KHZ  
GS  
I = -3.6A  
D
C
C
C
+ C , C  
SHORTED  
ds  
iss  
gs  
gd  
= C  
rss  
oss  
gd  
V
= -24V  
= -15V  
DS  
= C + C  
ds  
gd  
V
DS  
VDS= -6V  
1000  
100  
10  
C
iss  
6
C
C
oss  
rss  
4
2
0
1
10  
, Drain-to-Source Voltage (V)  
100  
0
2
4
6
8
10  
12  
V
Q , Total Gate Charge (nC)  
G
DS  
Fig 5. Typical Capacitance Vs.  
Fig 6. Typical Gate Charge Vs.  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
100  
10  
1
100  
10  
OPERATION IN THIS AREA  
LIMITED BY R  
(on)  
DS  
100µsec  
1msec  
T
= 150°C  
1
J
T
= 25°C  
J
10msec  
0.1  
0.01  
T
= 25°C  
A
Tj = 150°C  
Single Pulse  
V
= 0V  
GS  
0.1  
0.3  
0.5  
0.7  
0.9  
1.1  
0
1
10  
100  
V
, Source-to-Drain Voltage (V)  
V
DS  
, Drain-to-Source Voltage (V)  
SD  
Fig 7. Typical Source-Drain Diode  
Fig 8. Maximum Safe Operating Area  
Forward Voltage  
4
www.irf.com  
IRLML9301TRPbF  
4.2  
3.6  
3
RD  
VDS  
VGS  
D.U.T.  
RG  
+VDD  
-
2.4  
1.8  
1.2  
0.6  
0
VGS  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig 10a. Switching Time Test Circuit  
V
DS  
90%  
25  
50  
75  
100  
125  
150  
T
, Ambient Temperature (°C)  
A
10%  
Fig 9. Maximum Drain Current Vs.  
V
GS  
Ambient Temperature  
t
t
r
t
t
f
d(on)  
d(off)  
Fig 10b. Switching Time Waveforms  
1000  
100  
10  
D = 0.50  
0.20  
0.10  
0.05  
0.02  
0.01  
1
0.1  
Notes:  
0.01  
0.001  
1. Duty Factor D = t1/t2  
2. Peak Tj = P dm x Zthja + T  
SINGLE PULSE  
( THERMAL RESPONSE )  
A
1E-006  
1E-005  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
t
, Rectangular Pulse Duration (sec)  
1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient  
www.irf.com  
5
IRLML9301TRPbF  
180  
500  
400  
300  
200  
100  
0
I
= -3.6A  
D
140  
100  
T
= 125°C  
J
Vgs = -4.5V  
60  
20  
Vgs = -10V  
T
= 25°C  
J
2
4
6
8
10 12 14 16 18 20  
0
5
10  
15  
20  
25  
30  
35  
I
, Drain Current (A)  
D
V
Gate -to -Source Voltage (V)  
GS,  
Fig 13. Typical On-Resistance Vs. Drain  
Fig 12. Typical On-Resistance Vs. Gate  
Current  
Voltage  
Current Regulator  
Same Type as D.U.T.  
50KΩ  
Q
Q
G
.2µF  
12V  
.3µF  
VGS  
+
Q
V
GS  
GD  
DS  
D.U.T.  
-
V
GS  
V
G
3mA  
I
I
D
G
Charge  
Current Sampling Resistors  
Fig 14a. Basic Gate Charge Waveform  
Fig 14b. Gate Charge Test Circuit  
6
www.irf.com  
IRLML9301TRPbF  
100  
80  
60  
40  
20  
0
2.5  
2.0  
1.5  
1.0  
0.5  
I
= 10uA  
D
ID = 25uA  
= 250uA  
I
D
1E-005 0.0001 0.001 0.01  
0.1  
1
10  
-75 -50 -25  
0
25 50 75 100 125 150  
Time (sec)  
T
, Temperature ( °C )  
J
Fig 16. Typical Power Vs. Time  
Fig 15. Typical Threshold Voltage Vs.  
Junction Temperature  
www.irf.com  
7
IRLML9301TRPbF  
Micro3 (SOT-23) Package Outline  
Dimensions are shown in millimeters (inches)  
DIMENSIONS  
A
5
6
MILLIMETERS  
INCHES  
SYMBOL  
D
MIN  
0.89  
0.01  
0.88  
0.30  
0.08  
2.80  
2.10  
1.20  
0.95  
1.90  
0.40  
0.54  
0.25  
0
MAX  
1.12  
0.10  
1.02  
0.50  
0.20  
3.04  
2.64  
1.40  
BSC  
BSC  
0.60  
REF  
BSC  
8
MIN  
MAX  
A
A1  
A2  
b
c
D
E
E1  
e
A
0.0004  
A2  
C
3
E
6
E1  
0.15 [0.006]  
M
C
B A  
1
2
0.10 [0.004]  
C
A1  
3X  
b
e
0.20 [0.008] M  
C
B A  
B
5
NOTES:  
e1  
e1  
L
L1  
L2  
4
H
L1  
REF  
BSC  
8
Recommended Footprint  
c
0
0.972  
0.950  
2.742  
L2  
0.802  
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994  
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].  
3. CONTROLLING DIMENSION: MILLIMETER.  
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.  
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.  
3X L  
7
1.900  
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES  
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS  
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.  
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.  
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.  
Micro3 (SOT-23/TO-236AB) Part Marking Information  
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/  
8
www.irf.com  
IRLML9301TRPbF  
Micro3Tape & Reel Information  
Dimensions are shown in millimeters (inches)  
2.05 ( .080 )  
1.95 ( .077 )  
1.6 ( .062 )  
1.5 ( .060 )  
1.32 ( .051 )  
1.12 ( .045 )  
1.85 ( .072 )  
1.65 ( .065 )  
4.1 ( .161 )  
3.9 ( .154 )  
TR  
3.55 ( .139 )  
8.3 ( .326 )  
3.45 ( .136 )  
7.9 ( .312 )  
FEED DIRECTION  
4.1 ( .161 )  
3.9 ( .154 )  
0.35 ( .013 )  
0.25 ( .010 )  
1.1 ( .043 )  
0.9 ( .036 )  
178.00  
( 7.008 )  
MAX.  
9.90 ( .390 )  
8.40 ( .331 )  
NOTES:  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/  
www.irf.com  
9
IRLML9301TRPbF  
Orderable part number  
Package Type  
Micro3  
Standard Pack  
Note  
Form  
Tape and Reel  
Quantity  
IRLML9301TRPbF  
3000  
Qualification information†  
Cons umer††  
(per JEDEC JESD47F ††† guidelines )  
Qualification level  
MS L 1  
Moisture Sensitivity Level  
RoHS compliant  
Micro3  
(per IPC/JEDEC J-ST D-020D†††  
)
Yes  
†
Qualification standards can be found at International Rectifier’s web site  
http://www.irf.com/product-info/reliability  
††  
Higher qualification ratings may be available should the user have such requirements.  
Please contact your International Rectifier sales representative for further information:  
http://www.irf.com/whoto-call/salesrep/  
††† Applicable version of JEDEC standard at the time of product release.  
Notes:  
 Repetitive rating; pulse width limited by max. junction temperature.  
‚ Pulse width 400µs; duty cycle 2%.  
ƒ Surface mounted on 1 in square Cu board  
„ Refer to application note #AN-994.  
Data and specifications subject to change without notice.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.05/2010  
10  
www.irf.com  

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