IRLMS5703 [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRLMS5703 |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总9页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91413E
IRLMS5703
HEXFET® Power MOSFET
l Generation V Technology
l Micro6 Package Style
l Ultra Low Rds(on)
A
1
6
D
D
D
VDSS = -30V
2
5
D
l P-Channel MOSFET
3
4
G
S
RDS(on) = 0.20Ω
Description
T op V iew
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The Micro6 package with its customized leadframe
produces a HEXFET power MOSFET with Rds(on)
60% less than a similar size SOT-23. This package is
idealforapplicationswhereprintedcircuitboardspace
is at a premium. It's unique thermal design and RDS(on)
reductionenablesacurrent-handlingincreaseofnearly
300% compared to the SOT-23.
M icro6
Absolute Maximum Ratings
Parameter
Max.
-2.3
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @- 10V
Pulsed Drain Current
-1.9
A
-13
PD @TA = 25°C
Power Dissipation
1.7
W
mW/°C
V
Linear Derating Factor
13
VGS
Gate-to-Source Voltage
± 20
dv/dt
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
5.0
V/ns
°C
TJ,TSTG
-55 to + 150
Thermal Resistance Ratings
Parameter
Min.
Typ.
Max
Units
RθJA
Maximum Junction-to-Ambient
–––
–––
75
°C/W
4/7/04
IRLMS5703
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.01 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.20
––– ––– 0.40
-1.0 ––– –––
1.1 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– 100
––– ––– -100
VGS = -10V, ID = -1.6A
VGS = -4.5V, ID = -0.80A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -0.80A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
––– 7.2
11
ID = -1.6A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 1.4 2.1
––– 2.3 3.4
––– 10 –––
––– 12 –––
––– 20 –––
––– 8.4 –––
––– 170 –––
––– 89 –––
––– 44 –––
nC
ns
pF
VDS = -24V
VGS = -10V, See Fig. 6 and 9
VDD = -15V
ID = -1.6A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2Ω
RD = 9.2Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = -25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
–––
–––
––– -1.7
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
-13
–––
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– -1.2
V
TJ = 25°C, IS = -1.6A, VGS = 0V
TJ = 25°C, IF = -1.6A
––– 29
––– 27
44
41
ns
nC
Qrr
di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ISD ≤ -1.6A, di/dt ≤ -140A/µs, VDD ≤ V(BR)DSS, Surface mounted on FR-4 board, t ≤ 5sec.
TJ ≤ 150°C
IRLMS5703
1 0 0
1 0
1
1 0 0
1 0
1
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
TOP
TOP
BOTT OM - 3.0V
BOTT OM - 3.0V
-3.0V
-3.0V
20µs P ULSE WIDTH
20µs P ULSE WIDTH
T
J
= 25°C
T
J
= 150°C
A
0. 1
A
0. 1
0. 1
1
1 0
0. 1
1
1 0
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
D S
D S
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1 0 0
1 0
1
2. 0
1. 5
1. 0
0. 5
0. 0
I
= -1.6A
D
T
= 25°C
J
T
= 150°C
J
V
= -1 0V
DS
20µs P ULS E W IDTH
V
= -10V
GS
0. 1
A
8. 0 A
3. 0
4. 0
5. 0
6. 0
7. 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0
TJ , Junction Temperature (°C)
-VG S , Ga te-to-So urce Voltage (V)
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
IRLMS5703
3 5 0
2 0
1 6
1 2
8
V
C
C
C
= 0V ,
f = 1MH z
I
= -1.6A
D
GS
iss
= C
= C
= C
+ C
+ C
,
C
ds
SHORTED
gs
g d
ds
g d
V
V
= -24V
= -15V
DS
DS
3 0 0
2 5 0
2 0 0
1 5 0
1 0 0
5 0
rss
oss
gd
C
is s
C
o ss
C
rss
4
FOR TE ST CIRCUIT
SE E FIGURE 9
0
0
A
A
1
1 0
1 0 0
0
2
4
6
8
1 0
1 2
-VD S , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1 0 0
1 0 0
1 0
1
OPE RATION IN THIS A RE A LIMITE D
BY R
D S(o n)
1 0
T
= 150°C
J
100µs
1m s
T
= 25°C
J
1
10m s
T
T
= 25°C
= 150°C
A
J
S ingle Pulse
V
= 0V
GS
0. 1
A
0.1
A
0. 4
0. 6
0. 8
1. 0
1. 2
1. 4
1
1 0
1 0 0
-V
, Drain-to-Source Voltage (V)
-VSD , Source-to-Drain Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRLMS5703
RD
VDS
Q
G
VGS
-10V
D.U.T.
RG
Q
Q
-
+
GS
GD
VDD
V
-10V
G
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
t
t
r
t
t
f
d(on)
d(off)
V
50KΩ
GS
.2µF
12V
10%
.3µF
-
V
+
DS
D.U.T.
V
GS
90%
-3mA
V
DS
I
I
D
G
Current Sampling Resistors
Fig 10b. Switching Time Waveforms
Fig 9b. Gate Charge Test Circuit
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
P
DM
1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T = P
J
x Z
+ T
10
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRLMS5703
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
+
-
**
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
*
VDD
VGS
*
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
[
DD
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
IRLMS5703
Micro6 Package Outline
Dimensions are shown in millimeters (inches)
LEAD ASSIGNMENTS
RECOMMENDED FOOTPRINT
3.00 (.118 )
2.80 (.111 )
-B-
2X 0.95 (.0375 )
D
D
S
1.75 (.068 )
1.50 (.060 )
6
1
5
2
4
6X (1.06 (.042 )
3.00 (.118 )
2.60 (.103 )
6
1
5
4
-A-
2.20 (.087 )
3
2
3
D
D
G
0.95 ( .0375 )
2X
0.50 (.019 )
6X
6X 0.65 (.025 )
0.35 (.014 )
0.15 (.006 ) M C A S B S
0O -10O
0.20 (.007 )
6X
1.30 (.051 )
0.90 (.036 )
0.09 (.004 )
1.45 (.057 )
0.90 (.036 )
-C-
0.10 (.004 )
SURFACES
0.15 (.006 )
MAX.
0.60 (.023 )
0.10 (.004 )
6
NOTES :
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : MILLIMETER.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
IRLMS5703
Micro6 Part Marking Information
IRLMS5703
Micro6 Tape & Reel Information
Dimensions are shown in millimeters (inches)
8mm
FEED DIRECTION
4mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/04
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