IRLR024Z [INFINEON]
AUTOMOTIVE MOSFET; 汽车MOSFET
| 型号： | IRLR024Z |
| 厂家： | 
Infineon |
| 描述： | AUTOMOTIVE MOSFET |
| 文件： | 总11页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95825A
IRLR024Z
AUTOMOTIVE MOSFET
IRLU024Z
HEXFET® Power MOSFET
Features
D
n Logic Level
VDSS = 55V
n Advanced Process Technology
n UltraLowOn-Resistance
n 175°COperatingTemperature
n Fast Switching
RDS(on) = 58mΩ
G
n Repetitive Avalanche Allowed up to Tjmax
ID = 16A
S
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficientandreliabledeviceforuseinAutomotiveapplicationsand
a wide variety of other applications.
D-Pak
IRLR024Z
I-Pak
IRLU024Z
Absolute Maximum Ratings
Parameter
Max.
16
Units
(Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ T = 25°C
C
D
D
@ T = 100°C
C
11
A
64
DM
P
@T = 25°C Power Dissipation
C
35
W
W/°C
V
D
Linear Derating Factor
0.23
± 16
25
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy
GS
EAS (Thermally limited)
AS (Tested )
mJ
E
Single Pulse Avalanche Energy Tested Value
Avalanche Current
25
IAR
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
Operating Junction and
mJ
T
J
-55 to + 175
T
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
STG
300 (1.6mm from case )
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
4.28
40
Units
Rθ
Rθ
Rθ
Junction-to-Case
JC
JA
JA
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
110
HEXFET® isaregisteredtrademarkofInternationalRectifier.
www.irf.com
1
06/21/04
IRLR/U024Z
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient ––– 0.053 ––– V/°C Reference to 25°C, ID = 1mA
–––
Static Drain-to-Source On-Resistance –––
–––
46
58
80
VGS = 10V, ID = 9.6A
mΩ
RDS(on)
–––
–––
–––
–––
–––
–––
–––
VGS = 5.0V, ID = 5.0A
VGS = 4.5V, ID = 3.0A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 9.6A
100
3.0
–––
20
VGS(th)
Gate Threshold Voltage
1.0
7.4
V
S
gfs
Forward Transconductance
Drain-to-Source Leakage Current
IDSS
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA
VDS = 55V, VGS = 0V
250
200
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA VGS = 16V
GS = -16V
ID = 5.0A
DS = 44V
––– -200
V
Qg
Qgs
Qgd
td(on)
tr
6.6
1.6
3.9
8.2
43
9.9
–––
–––
–––
–––
–––
–––
–––
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC
V
VGS = 5.0V
VDD = 28V
ID = 5.0A
Rise Time
td(off)
tf
Turn-Off Delay Time
19
ns
RG = 28 Ω
VGS = 5.0V
Fall Time
16
LD
Internal Drain Inductance
4.5
Between lead,
D
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
S
and center of die contact
VGS = 0V
DS = 25V
pF ƒ = 1.0MHz
Ciss
Input Capacitance
–––
–––
–––
–––
–––
–––
380
62
–––
–––
–––
–––
–––
–––
Coss
Output Capacitance
V
Crss
Reverse Transfer Capacitance
Output Capacitance
39
Coss
180
50
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
81
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
I
Continuous Source Current
–––
–––
16
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
I
–––
–––
64
SM
S
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
16
1.3
24
17
V
T = 25°C, I = 9.6A, V
= 0V
GS
SD
J
S
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 9.6A, VDD = 28V
J F
rr
di/dt = 100A/µs
Q
t
11
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
www.irf.com
IRLR/U024Z
100
10
1
100
10
1
VGS
10V
VGS
10V
TOP
TOP
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
BOTTOM
BOTTOM
3.0V
3.0V
60µs PULSE WIDTH
Tj = 175°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
0.1
0.1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
15
T
= 25°C
J
T
= 175°C
J
10
5
T
= 175°C
J
T
= 25°C
V
J
V
= 8.0V
DS
= 10V
DS
300µs PULSE WIDTH
≤
60µs PULSE WIDTH
0.1
0
0
2
4
6
8
10
12
0
2
4
6
8
10 12 14 16
I ,Drain-to-Source Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
www.irf.com
3
IRLR/U024Z
10000
6.0
5.0
4.0
3.0
2.0
1.0
0.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 5.0A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
V
V
V
= 44V
= 28V
= 11V
DS
DS
DS
= C
rss
oss
gd
= C + C
ds
gd
1000
100
10
C
iss
C
oss
C
rss
1
10
100
0
1
2
3
4
5
6
7
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100µsec
1
1msec
Tc = 25°C
Tj = 175°C
T
= 25°C
1.5
J
V
= 0V
10msec
GS
Single Pulse
0.1
0.0
0.5
1.0
2.0
2.5
3.0
1
10
100
1000
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRLR/U024Z
2.5
2.0
1.5
1.0
0.5
16
14
12
10
8
I
= 5.0A
D
V
= 5.0V
GS
6
4
2
0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
25
50
75
100
125
150
175
T , Junction Temperature (°C)
T
, Case Temperature (°C)
J
C
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs.Temperature
CaseTemperature
10
D = 0.50
1
0.20
0.10
0.05
R1
R1
R2
R2
0.1
0.01
0.02
0.01
Ri (°C/W) τi (sec)
τ
J τJ
τ
2.354
0.000354
τ
Cτ
1 τ1
Ci= τi/Ri
τ
2τ2
1.926
0.001779
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRLR/U024Z
100
80
60
40
20
0
15V
I
D
TOP
1.2A
1.8A
BOTTOM 9.6A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
2
V0GVS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
2.5
2.0
1.5
1.0
V
G
Charge
I
= 250µA
D
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
0
1K
-75 -50 -25
0
25 50 75 100 125 150 175
T , Temperature ( °C )
J
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRLR/U024Z
100
10
1
Allowed avalanche Current vs
avalanche pulsewidth, tav
Duty Cycle = Single Pulse
0.01
∆
assuming
Tj = 25°C due to
avalanche losses
0.05
0.10
0.1
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
30
25
20
15
10
5
TOP
BOTTOM 1% Duty Cycle
= 9.6A
Single Pulse
I
D
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
0
D = Duty cycle in avalanche = tav ·f
25
50
75
100
125
150
175
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 16. Maximum Avalanche Energy
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
vs.Temperature
www.irf.com
7
IRLR/U024Z
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
-
+
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
8
www.irf.com
IRLR/U024Z
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
- A -
1.27 (.050)
0.88 (.035)
5.46 (.215)
5.21 (.205)
0.58 (.023)
0.46 (.018)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
10.42 (.410)
9.40 (.370)
1.02 (.040)
1.64 (.025)
LEAD ASSIGNMENTS
1 - GATE
1
2
3
0.51 (.020)
MIN.
2 - DRAIN
- B -
3 - SOURCE
4 - DRAIN
1.52 (.060)
1.15 (.045)
0.89 (.035)
0.64 (.025)
3X
0.58 (.023)
0.46 (.018)
1.14 (.045)
0.76 (.030)
2X
0.25 (.010)
M A M B
NOTES:
2.28 (.090)
1
2
3
4
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
4.57 (.180)
CONFORMS TO JEDEC OUTLINE TO-252AA.
DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WIT H AS S E MB LY
LOT CODE 1234
RECTIFIER
ASSEMBLED ON WW 16, 1999
INTERNATIONAL
DAT E CODE
YEAR 9 = 1999
WE E K 16
IRFR120
916A
34
LOGO
IN THE ASSEMBLYLINE "A"
12
LINE A
No te : "P" in assembly line
pos ition indicates "Lead-Free"
AS S E MB L Y
LOT CODE
OR
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
IRFR120
P916A
34
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
YEAR 9 = 1999
12
AS S E MB L Y
LOT CODE
WEEK 16
A = AS S E MB L Y S IT E CODE
www.irf.com
9
IRLR/U024Z
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
6.73 (.265)
6.35 (.250)
2.38 (.094)
2.19 (.086)
- A -
0.58 (.023)
0.46 (.018)
1.27 (.050)
5.46 (.215)
0.88 (.035)
5.21 (.205)
LEAD ASSIGNMENTS
1 - GATE
4
2 - DRAIN
6.45 (.245)
5.68 (.224)
3 - SOURCE
4 - DRAIN
6.22 (.245)
5.97 (.235)
1.52 (.060)
1.15 (.045)
1
2
3
- B -
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
2.28 (.090)
1.91 (.075)
9.65 (.380)
8.89 (.350)
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
1.14 (.045)
0.76 (.030)
1.14 (.045)
0.89 (.035)
3X
0.89 (.035)
0.64 (.025)
3X
0.25 (.010)
M A M B
0.58 (.023)
0.46 (.018)
2.28 (.090)
2X
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
INTERNATIONAL
RECTIFIER
LOGO
WITH ASSEMBLY
LOT CODE 5678
DATE CODE
YEAR 9 = 1999
WE E K 19
IRFU120
919A
78
AS SEMBLED ON WW 19, 1999
IN THE ASSEMBLY LINE "A"
56
LINE A
AS S E MB L Y
LOT CODE
Note: "P" in as sembly line
pos ition indicates "L ead-F r ee"
OR
PART NUMBER
DATE CODE
P = DE S I GNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
56 78
YEAR 9 = 1999
AS S E MB L Y
LOT CODE
WEE K 19
A = AS S E MB L Y S IT E CODE
10
www.irf.com
IRLR/U024Z
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.54mH
ꢀ
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
RG = 25Ω, IAS = 9.6A, VGS =10V. Part not
recommended for use above this value.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
R ismeasuredatTJofapproximately90°C.
θ
80% VDSS
.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/04
www.irf.com
11
相关型号：
IRLR024ZTRPBF
Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
INFINEON
IRLR024ZTRR
Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
INFINEON
IRLR110
Power Field-Effect Transistor, 4A I(D), 100V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
SAMSUNG
IRLR110ATM
Power Field-Effect Transistor, 4.7A I(D), 100V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明