IRLR120NPBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | IRLR120NPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET |
| 文件： | 总11页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95082A
IRLR/U120NPbF
HEXFET® Power MOSFET
l Surface Mount (IRLR120N)
l Straight Lead (IRLU120N)
l Advanced Process Technology
l Fast Switching
D
VDSS = 100V
l Fully Avalanche Rated
RDS(on) = 0.185Ω
l Lead-Free
G
ID = 10A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
D-PAK
TO-252AA
I-PAK
TO-251AA
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
10
7.0
35
A
PD @TC = 25°C
Power Dissipation
48
W
W/°C
V
Linear Derating Factor
0.32
± 16
85
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
6.0
4.8
5.0
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
3.1
Units
°C/W
1
RθJC
RθJA
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
50
RθJA
110
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12/6/04
IRLR/U120NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
100 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.185
––– ––– 0.225
––– ––– 0.265
VGS = 10V, ID = 6.0A
RDS(on)
Static Drain-to-Source On-Resistance
W
VGS = 5.0V, ID = 6.0A
VGS = 4.0V, ID = 5.0A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 6.0A
VGS(th)
gfs
Gate Threshold Voltage
1.0
3.1
––– 2.0
––– –––
V
S
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 20
––– ––– 4.6
––– ––– 10
V
DS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
GS = 16V
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
V
VGS = -16V
ID = 6.0A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 80V
VGS = 5.0V, See Fig. 6 and 13
–––
–––
–––
–––
4.0 –––
35 –––
23 –––
22 –––
VDD = 50V
ID = 6.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 11Ω, VGS = 5.0V
RD = 8.2Ω, See Fig. 10
Between lead,
D
S
LD
LS
Internal Drain Inductance
Internal Source Inductance
4.5
nH
6mm (0.25in.)
G
from package
––– 7.5 –––
––– 440 –––
and center of die contactꢀ
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
–––
–––
97 –––
50 –––
pF
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
10
35
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 110 160
––– 410 620
V
TJ = 25°C, IS = 6.0A, VGS = 0V
ns
TJ = 25°C, IF =6.0A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 4.7mH
RG = 25Ω, IAS = 6.0A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ This is applied for I-PAK, LS of D-PAK is measured between lead and
center of die contact
ISD ≤ 6.0A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
Uses IRL520N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
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IRLR/U120NPbF
100
10
1
100
10
1
VGS
15V
VGS
TOP
TOP
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
= 25°C
J
T
= 175°C
J
0.1
A
0.1
0.1
A
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
I
= 10A
D
TJ = 25°C
TJ= 175°C
10
1
VDS = 50V
20µs PULSE WIDTH
V
= 10V
GS
0.1
A
A
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
2
4
6
8
10
and
T , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRLR/U120NPbF
800
15
12
9
V
C
C
C
= 0V,
f = 1MHz
I
= 6.0A
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
gs
gd
gd
ds
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
= C
= C + C
ds
gd
600
400
200
0
C
iss
C
oss
6
C
rss
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
5
10
15
20
25
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
T = 175°C
J
100µs
T = 25°C
J
1ms
10ms
T
T
= 25°C
= 175°C
C
J
V
= 0V
Single Pulse
GS
A
0.1
0.1
A
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRLR/U120NPbF
10
8
RD
VDS
VGS
D.U.T.
RG
+VDD
-
6
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
V
DS
90%
A
175
0
25
50
75
100
125
150
T , Case Temperature (°C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
P
2
DM
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLR/U120NPbF
200
160
120
80
I
D
TOP
2.4A
4.2A
BOTTOM 6.0A
15V
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
10V
Ω
0.01
t
p
40
Fig 12a. Unclamped Inductive Test Circuit
0
A
175
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
V
(BR)DSS
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
.3µF
Q
G
+
5.0 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRLR/U120NPbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRLR/U120NPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WITH ASSEMBLY
LOT CODE 1234
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 9 = 1999
WE EK 16
IRFU120
916A
12
34
LINE A
Note: "P" in assembly lineposition
ASSEMBLY
LOT CODE
indicates "L ead-F ree"
OR
PART NUMBER
DATE CODE
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
12 34
YEAR 9 = 1999
ASSEMBLY
LOT CODE
WEEK 16
A= ASSEMBLY SITE CODE
8
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IRLR/U120NPbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
INTERNATIONAL
RECTIFIER
LOGO
WITH ASSEMBLY
LOT CODE 5678
ASSEMBLED ON WW19, 1999
IN THE ASSEMBLY LINE "A"
DATE CODE
YEAR 9 = 1999
WEEK 19
IRFU120
919A
78
56
LINE A
ASSEMBLY
LOT CODE
Note: "P" inassemblyline
position indicates "Lead-Free"
OR
PART NUMBER
DATE CODE
P = DE S IGNAT E S LE AD-F R EE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
56 78
YEAR 9 = 1999
ASSEMBLY
LOT CODE
WEEK 19
A= ASSEMBLY SITE CODE
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9
IRLR/U120NPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
10
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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