IRLR3103TRPBF [INFINEON]
Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3;型号: | IRLR3103TRPBF |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 局域网 开关 脉冲 晶体管 |
文件: | 总10页 (文件大小:213K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 91333E
IRLR/U3103
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Ultra Low On-Resistance
l Surface Mount (IRLR3103)
l Straight Lead (IRLU3103)
l Advanced Process Technology
l Fast Switching
D
VDSS = 30V
RDS(on) = 0.019Ω
G
ID = 55Aꢀ
l Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
D -PAK
I-PAK
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
TO -252AA
TO -251AA
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
55ꢀ
39ꢀ
220
107
0.71
± 16
240
34
A
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
11
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
1.4
50
Units
°C/W
1
RθJC
RθJA
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
RθJA
110
www.irf.com
11/11/98
IRLR/U3103
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.037 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.019
––– ––– 0.024
VGS = 10V, ID = 33A
VGS = 4.5V, ID = 25A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 34A
VDS = 30V, VGS = 0V
Ω
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
1.0
23
––– –––
––– –––
V
S
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 50
––– ––– 14
––– ––– 28
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
VDS = 18V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 16V
VGS = -16V
ID = 34A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 24V
VGS = 4.5V, See Fig. 6 and 13
–––
9.0 –––
VDD = 15V
––– 210 –––
ID = 34A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
20 –––
54 –––
RG = 3.4Ω, VGS = 4.5V
RD = 0.43Ω, See Fig. 10
Between lead,
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
4.5
–––
nH
6mm (0.25in.)
G
from package
––– 7.5 –––
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 1600 –––
––– 640 –––
––– 320 –––
Output Capacitance
pF
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
55ꢀ
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 220
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 81 120
––– 210 310
V
TJ = 25°C, IS = 28A, VGS = 0V
ns
TJ = 25°C, IF = 34A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25°C, L = 300µH
RG = 25Ω, IAS = 34A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%
ꢀ Calculated continuous current based on maximum allowable junction
temperature; Package limitation current = 20A
This is applied for I-PAK, LS of D-PAK is measured between lead and
center of die contact
ISD ≤ 34A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
Uses IRL3103 data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
www.irf.com
IRLR/U3103
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
12V
12V
10V
10V
8.0V
6.0V
4.0V
3.0V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
20µs PULSE W IDTH
20µs PULSE W IDTH
T
= 25°C
T
= 175°C
J
J
1
1
A
A
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
D S
D S
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
1000
I
= 56A
D
TJ = 25°C
100
10
1
TJ = 175°C
V DS = 15V
20µs PU LSE W ID TH
V
= 10V
GS
A
A
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
VG S , Gate-to-Source Voltage (V)
T
J
, Junction Tem perature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRLR/U3103
3200
15
12
9
V
C
C
C
= 0V,
f = 1M Hz
GS
iss
I
= 34A
D
= C
= C
= C
+ C
+ C
,
C
SHORTED
gs
gd
ds
gd
ds
V
V
= 24V
= 15V
DS
DS
2800
2400
2000
1600
1200
800
rss
oss
gd
C
C
iss
oss
6
C
rss
3
400
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
A
1
10
100
0
10
20
30
40
50
60
70
V
, Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
OPERATION IN THIS AREA LIM ITED
BY R
DS(on)
10µs
100
10
1
100µs
T
= 175°C
J
1m s
T
= 25°C
J
10m s
T
T
= 25°C
= 175°C
Single Pulse
C
J
V
= 0V
G S
A
A
0.4
0.8
1.2
1.6
2.0
2.4
2.8
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
www.irf.com
IRLR/U3103
60
50
40
30
20
10
0
RD
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRLR/U3103
600
500
400
300
200
100
0
I
D
TOP
14A
24A
34A
15V
BOTTOM
DRIVER
L
V
D S
D.U .T
R
G
+
V
D D
-
I
A
AS
10V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
= 15V
50
DD
A
175
25
75
100
125
150
Starting T , Junction Tem perature (°C)
V
(BR )D SS
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
5.0 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRLR/U3103
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
www.irf.com
7
IRLR/U3103
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
- A -
1.27 (.050)
5.46 (.215)
0.58 (.023)
0.46 (.018)
0.88 (.035)
5.21 (.205)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
10.42 (.410)
9.40 (.370)
1.02 (.040)
1.64 (.025)
LEAD ASSIG NM ENTS
1 - GATE
1
2
3
0.51 (.020)
MIN.
2 - DRA IN
- B -
3 - SOURCE
4 - DRA IN
1.52 (.060)
1.15 (.045)
0.89 (.035)
0.64 (.025)
3X
0.58 (.023)
0.46 (.018)
1.14 (.045)
0.76 (.030)
2X
0.25 (.010)
M
A M B
NOTES:
2.28 (.090)
1
2
3
4
DIMENSIONING & TOLERANCING PER ANSI Y 14.5M, 1982.
CONTROLLING DIMENSION : INCH.
4.57 (.180)
CONFORMS TO JEDE C OUTLINE TO-252AA.
DIMENSIONS SHOW N ARE BEFORE SOLDER DIP,
SOLDER DIP M AX. +0.16 (.006).
Part Marking Information
TO-252AA (D-PARK)
EXAMPLE : THIS IS AN IRFR120
W ITH ASSEM BLY
A
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 9U1P
FIRST PORTION
OF PART NUMBER
IRFR
120
1P
9U
ASSEMBLY
SECOND PORTION
OF PART NUM BER
LOT CODE
8
www.irf.com
IRLR/U3103
Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
6.73 (.265)
6.35 (.250)
2.38 (.094)
2.19 (.086)
- A -
0.58 (.023)
0.46 (.018)
1.27 (.050)
5.46 (.215)
0.88 (.035)
5.21 (.205)
LEAD ASSIGNM ENTS
4
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
1.52 (.060)
1.15 (.045)
1
2
3
- B -
NOTES:
1
2
3
4
DIM ENS IONING & TOLERANCING PER ANSI Y14.5M , 1982.
CONTROLLING DIMENSION : INCH.
2.28 (.090)
1.91 (.075)
9.65 (.380)
8.89 (.350)
CONFORMS TO JEDEC OUTLINE TO-252AA.
DIM ENS IONS SHOW N ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
1.14 (.045)
0.76 (.030)
1.14 (.045)
0.89 (.035)
3X
0.89 (.035)
0.64 (.025)
3X
0.25 (.010)
M
A M B
0.58 (.023)
0.46 (.018)
2.28 (.090)
2X
Part Marking Information
TO-251AA (I-PARK)
EXAM PLE : TH IS IS AN IR FU 120
W ITH ASSEM BLY
INTE RN ATION AL
R EC TIFIER
LO GO
LO T C OD E 9U 1P
FIR ST PO RTION
OF PAR T N U M BER
IR FU
120
1P
9U
SEC O N D PO R TIO N
O F PAR T N U M B ER
AS SEM BLY
LOT
C O D E
www.irf.com
9
IRLR/U3103
Tape & Reel Information
TO-252AA
TR
TR L
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIR ECTIO N
FEED DIR ECTIO N
N O TES :
1. C O NTRO LLING D IM EN SIO N : M ILLIM ETER.
2. ALL D IM EN SIO N S ARE SH O W N IN M ILLIM ETERS ( INC HES ).
3. O U TLINE C O N FO RM S TO EIA-481 & EIA-541.
13 INC H
16 m m
NO TES :
1. O U TLINE CO N FO RM S TO EIA-481.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
11/98
10
www.irf.com
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