IRLR3114Z [INFINEON]

40V 单个 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封装;


型号：	IRLR3114Z
厂家：	Infineon
描述：	40V 单个 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封装
文件：	总12页 (文件大小：324K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 97284A

IRLR3114ZPbF

IRLU3114ZPbF

Features

HEXFET^®Power MOSFET

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Logic Level

V_DSS= 40V

_DS(on)= 4.9mΩ

Description

ThisHEXFET^®PowerMOSFETutilizesthelatest

processing techniques to achieve extremely low

on-resistancepersiliconarea. Additionalfeatures

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitiveavalancherating. Thesefeaturescombine

to make this design an extremely efficient and

reliable device for use in a wide variety of

applications.

D-Pak

IRLR3114ZPbF

I-Pak

IRLU3114ZPbF

Absolute Maximum Ratings

Parameter

Max.

Units

@ T = 25°C

130

(Silicon Limited)

(Package Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 100°C

@ T = 25°C

500

140

@T = 25°C

Power Dissipation

Linear Derating Factor

0.95

±16

W/°C

Gate-to-Source Voltage

E_{AS (Thermally limited)}

130

260

Single Pulse Avalanche Energy

_AS(Tested )

Single Pulse Avalanche Energy Tested Value

Avalanche Current

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

-55 to + 175

Operating Junction and

°C

Storage Temperature Range

STG

Reflow Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

300

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.05

Units

R_θJC

Junction-to-Case

R_θJA

°C/W

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

110

HEXFET^®isaregisteredtrademarkofInternationalRectifier.

www.irf.com

10/01/10

IRLR/U3114ZPbF

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Drain-to-Source Breakdown Voltage

Min. Typ. Max. Units

40 ––– –––

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

∆V_(BR)DSS/∆T_J

R_DS(on)

Breakdown Voltage Temp. Coefficient ––– 0.032 ––– V/°C Reference to 25°C, I_D= 1mA

mΩ

Static Drain-to-Source On-Resistance

–––

1.0

3.9

5.2

–––

4.9

6.5

V_GS= 10V, I_D= 42A

V_GS= 4.5V, I_D= 42A

V_DS= V_GS, I_D= 100µA

V_DS= 10V, I_D= 42A

V_GS(th)

Gate Threshold Voltage

2.5

gfs

I_DSS

Forward Transconductance

Drain-to-Source Leakage Current

–––

µA

V_DS= 40V, V_GS= 0V

250

100

-100

V_DS= 40V, V_GS= 0V, T_J= 125°C

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

nA V_GS= 16V

_GS= -16V

I_D= 42A

_DS= 20V

Q_g

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

–––

V_GS= 4.5V

V_DD= 20V

I_D= 42A

Rise Time

140

t_d(off)

t_f

Turn-Off Delay Time

R_G= 3.7Ω

V_GS= 4.5V

Fall Time

L_D

Internal Drain Inductance

4.5

Between lead,

nH 6mm (0.25in.)

from package

L_S

Internal Source Inductance

–––

7.5

–––

and center of die contact

V_GS= 0V

_DS= 25V

pF ƒ = 1.0MHz

C_iss

Input Capacitance

––– 3810 –––

C_oss

Output Capacitance

–––

650

350

–––

C_rss

Reverse Transfer Capacitance

Output Capacitance

C_oss

––– 2390 –––

V_GS= 0V, V_DS= 1.0V, ƒ = 1.0MHz

V_GS= 0V, V_DS= 32V, ƒ = 1.0MHz

V_GS= 0V, V_DS= 0V to 32V

C_oss

Output Capacitance

–––

580

820

–––

C_osseff.

Effective Output Capacitance

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

MOSFET symbol

Continuous Source Current

–––

130

(Body Diode)

Pulsed Source Current

showing the

integral reverse

–––

500

(Body Diode)

p-n junction diode.

Diode Forward Voltage

–––

1.3

T = 25°C, I = 42A, V = 0V

J S GS

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

ns T = 25°C, I = 42A, V_DD= 20V

J F

di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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IRLR/U3114ZPbF

1000

100

1000

100

VGS

15V

10V

8.0V

4.5V

3.5V

3.0V

2.7V

2.5V

VGS

15V

10V

8.0V

4.5V

3.5V

3.0V

2.7V

2.5V

TOP

BOTTOM

2.5V

60µs PULSE WIDTH

Tj = 175°C

≤

2.5V

60µs PULSE WIDTH

Tj = 25°C

≤

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

200

150

100

= 25°C

100

= 175°C

= 25°C

= 175°C

= 10V

380µs PULSE WIDTH

= 15V

≤

60µs PULSE WIDTH

0.1

100

I ,Drain-to-Source Current (A)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

vs. Drain Current

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IRLR/U3114ZPbF

100000

6.0

5.0

4.0

3.0

2.0

1.0

0.0

= 0V,

= C

f = 1 MHZ

I = 42A

+ C , C

SHORTED

iss

= C

rss

oss

= 32V

= 20V

= 8.0V

= C + C

10000

1000

100

iss

oss

rss

, Drain-to-Source Voltage (V)

100

Q , Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs.

Fig 5. Typical Capacitance vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

1000

100

10000

1000

100

OPERATION IN THIS AREA

LIMITED BY R

(on)

= 175°C

100µsec

1msec

10msec

Tc = 25°C

= 25°C

Tj = 175°C

Single Pulse

= 0V

1.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

, Drain-to-Source Voltage (V)

100

, Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

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IRLR/U3114ZPbF

2.0

1.5

1.0

0.5

140

120

100

= 42A

= 10V

Limited By Package

-60 -40 -20 0 20 40 60 80 100120140160180

, Junction Temperature (°C)

100

125

150

175

, Case Temperature (°C)

Fig 10. Normalized On-Resistance

Fig 9. Maximum Drain Current vs.

vs.Temperature

CaseTemperature

D = 0.50

0.20

0.10

0.05

R₁

R₂

R₃

R₄

Ri (°C/W) τi (sec)

0.1

0.01

0.0350

0.2433

0.4851

0.2867

0.000013

0.000077

0.001043

0.004658

^Jτ_J

^Cτ

¹τ₁

Ci= τi/Ri

²τ₂

³τ₃

⁴τ₄

0.02

0.01

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

SINGLE PULSE

( THERMAL RESPONSE )

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRLR/U3114ZPbF

600

500

400

300

200

100

15V

TOP

9.7A

17A

BOTTOM 42A

DRIVER

D.U.T

V0_GV_S

Ω

0.01

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

100

125

150

175

Starting T , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

Fig 12b. Unclamped Inductive Waveforms

vs. Drain Current

10 V

3.0

2.5

2.0

1.5

1.0

0.5

Charge

Fig 13a. Basic Gate Charge Waveform

= 150µA

= 250µA

= 1.0mA

= 1.0A

VCC

DUT

-75 -50 -25

25 50 75 100 125 150175 200

T , Temperature ( °C )

Fig 14. Threshold Voltage vs. Temperature

Fig 13b. Gate Charge Test Circuit

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IRLR/U3114ZPbF

1000

100

Duty Cycle = Single Pulse

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ∆ Tj = 150°C and

Tstart =25°C (Single Pulse)

0.01

0.05

0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ∆Τj = 25°C and

Tstart = 150°C.

0.1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T_jmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long as

neither Tjmax nor Iav (max) is exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 12a, 12b.

4. P_{D (ave)}= Average power dissipation per single

avalanche pulse.

150

100

TOP

BOTTOM 1.0% Duty Cycle

= 42A

Single Pulse

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I_av= Allowable avalanche current.

7. ∆T = Allowable rise in junction temperature, not to exceed

T_jmax(assumed as 25°C in Figure 15, 16).

t_{av =}Average time in avalanche.

D = Duty cycle in avalanche = t_av·f

Z_thJC(D, t_av) = Transient thermal resistance, see figure 11)

100

125

150

175

Starting T , Junction Temperature (°C)

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC

Fig 16. Maximum Avalanche Energy

I_av= 2DT/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)}·t_av

vs.Temperature

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IRLR/U3114ZPbF

Driver Gate Drive

P.W.

Period

D =

D.U.T

=10V

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

V_DD

Re-Applied

Voltage

• dv/dt controlled by R_G

R_G

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

Ripple

≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

90%

10%

d(on)

d(off)

Fig 18b. Switching Time Waveforms

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IRLR/U3114ZPbF

D-Pak (TO-252AA) Package Outline

Dimensions are shown in millimeters (inches)

D-Pak (TO-252AA) Part Marking Information

EXAMPLE: THIS IS AN IRFR120

PART NUMBER

WIT H AS S E MBLY

LOT CODE 1234

ASSEMBLED ON WW 16, 2001

IN THE ASSEMBLY LINE "A"

INTERNATIONAL

RECTIFIER

LOGO

DAT E CODE

YEAR 1 = 2001

WE E K 16

IRFR120

116A

LINE A

Note: "P" in assembly lineposition

AS S EMBL Y

LOT CODE

indicates "L ead-F ree"

"P" in assembly lineposition indicates

"L ead-F ree" qualification to the cons umer-level

PART NUMBER

INTERNATIONAL

RECTIFIER

LOGO

DAT E CODE

P = DESIGNATES LEAD-FREE

PRODUCT (OPTIONAL)

IRFR120

12 34

P = DESIGNATES LEAD-FREE

PRODUCT QUALIFIED TOTHE

CONSUMER LEVEL (OPTIONAL)

AS S EMBL Y

LOT CODE

YEAR 1 = 2001

WE E K 16

A = AS S E MB L Y S I T E CODE

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRLR/U3114ZPbF

I-Pak (TO-251AA) Package Outline

Dimensions are shown in millimeters (inches)

I-Pak (TO-251AA) Part Marking Information

PART NUMBER

EXAMPLE: THIS IS AN IRFU120

WIT H AS S E MB LY

INTERNATIONAL

RECTIFIER

LOGO

DAT E CODE

YEAR 1 = 2001

WE E K 19

IRFU120

119A

LOT CODE 5678

ASSEMBLED ON WW19, 2001

IN THE ASSEMBLY LINE "A"

LINE A

AS S EMBL Y

LOT CODE

Note: "P" in assemblylineposition

indicates L ead-Free"

PART NUMBER

DAT E CODE

P = DESIGNATES LEAD-FREE

PRODUCT (OPTIONAL)

INTERNATIONAL

RECTIFIER

LOGO

IRFU120

YEAR 1 = 2001

AS S EMBLY

LOT CODE

WE E K 19

A= ASSEMBLY SITE CODE

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com

IRLR/U3114ZPbF

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRL

TRR

16.3 ( .641 )

15.7 ( .619 )

16.3 ( .641 )

15.7 ( .619 )

12.1 ( .476 )

11.9 ( .469 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

16 mm

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

Notes:

ꢀ

C_osseff. is a fixed capacitance that gives the same charging time

as C_osswhile V_DSis rising from 0 to 80% V_DSS

Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

Limited by T_Jmax, starting T_J= 25°C, L = 0.15mH

R_G= 25Ω, I_AS= 42A, V_GS=10V. Part not

recommended for use above this value.

Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

Limited by T_Jmax, see Fig.12a, 12b, 15, 16 for typical repetitive

avalanche performance.

This value determined from sample failure population. 100%

tested to this value in production.

When mounted on 1" square PCB (FR-4 or G-10 Material).

R_θis measured at T_Japproximately 90°C.

Data and specifications subject to change without notice.

This product has been designed for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.10/2010

www.irf.com

IMPORTANT NOTICE

The information given in this document shall in no For further information on the product, technology,

event be regarded as a guarantee of conditions or delivery terms and conditions and prices please

characteristics (“Beschaffenheitsgarantie”) .

contact your nearest Infineon Technologies office

(www.infineon.com).

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized

representatives

Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

IRLR3114Z [INFINEON]

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