IRLR3714TRPBF [INFINEON]
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| 型号： | IRLR3714TRPBF |
| 厂家： | 
Infineon |
| 描述： | 暂无描述 开关 |
| 文件： | 总10页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94266
IRLR3714
SMPS MOSFET
IRLU3714
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
VDSS
RDS(on) max
ID
Converters with Synchronous Rectification
for Telecom and Industrial Use
20V
20mΩ
36A
l High Frequency Buck Converters for
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRLR3714
I-Pak
IRLU3714
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-to-Source Voltage
± 20
V
ID @ TC = 25°C
ID @ TC = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
36 ꢀ
31
A
140
PD @TC = 25°C
PD @TC = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
47
W
W
33
0.31
W/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 175
Thermal Resistance
Parameter
Typ.
Max.
3.2
Units
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
–––
–––
–––
°C/W
50
110
Notes through ꢀare on page 10
www.irf.com
1
06/15/01
IRLR3714/IRLU3714
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
0.022 ––– V/°C Reference to 25°C, ID = 1mA
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
–––
–––
1.0
15
20
28
VGS = 10V, ID = 18A
VGS = 4.5V, ID = 14A
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
21
VGS(th)
IDSS
Gate Threshold Voltage
–––
–––
–––
–––
3.0
20
V
–––
–––
–––
–––
VDS = 16V, VGS = 0V
Drain-to-Source Leakage Current
µA
100
200
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 16V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
––– -200
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 10V, ID = 14A
ID = 14A
17
––– –––
6.5 9.7
1.8 –––
2.9 –––
7.1 –––
8.7 –––
78 –––
10 –––
4.5 –––
S
Qg
–––
–––
–––
–––
–––
–––
–––
–––
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
nC VDS = 10V
VGS = 4.5V
VGS = 0V, VDS = 10V
VDD = 10V
ID = 14A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 1.8Ω
VGS = 4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 670 –––
––– 470 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = 10V
ƒ = 1.0MHz
–––
68 –––
pF
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
72
Units
mJ
IAR
Avalanche Current
–––
14
A
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
36ꢀ
–––
–––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
140
S
––– ––– 1.3
––– 0.88 –––
V
TJ = 25°C, IS = 18A, VGS = 0V
VSD
Diode Forward Voltage
TJ = 125°C, IS = 18A, VGS = 0V
TJ = 25°C, IF = 18A, VR=10V
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 35
––– 34
––– 35
––– 35
53
51
53
53
ns
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 18A, VR=10V
nC di/dt = 100A/µs
Qrr
2
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IRLR3714/IRLU3714
1000
10000
1000
100
10
VGS
15V
10V
VGS
15V
10V
TOP
TOP
4.5V
4.5V
3.0V
2.7V
2.5V
2.2V
3.0V
2.7V
2.5V
2.2V
100
10
1
BOTTOM 2.0V
BOTTOM 2.0V
1
2.0V
2.0V
0.1
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.01
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
1000.00
100.00
10.00
36A
=
I
D
2.0
1.5
1.0
0.5
0.0
T
= 25°C
J
T
= 175°C
J
V
= 15V
DS
20µs PULSE WIDTH
V
= 10V
GS
1.00
-60 -40 -20
0
20 40
60 80 100 120 140 160 180
2.0
4.0
6.0 8.0
10.0
°
T , Junction Temperature
( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
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3
IRLR3714/IRLU3714
15
12
9
10000
D
I
=
14A
V
= 0V,
f = 1 MHZ
GS
V
V
=
=
16V
10V
DS
DS
C
= C + C
,
C
SHORTED
iss
gs
gd
ds
C
= C
rss
gd
C
= C + C
oss
ds
gd
1000
100
10
Ciss
Coss
6
Crss
3
0
0
4
8
12
16
20
1
10
, Drain-to-Source Voltage (V)
100
Q
, Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000.00
100.00
10.00
1.00
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.10
1
10
, Drain-toSource Voltage (V)
100
0.0
1.0
2.0
3.0
V
V
, Source-toDrain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
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IRLR3714/IRLU3714
40
30
20
10
0
RD
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
10%
°
( C)
T
, Case Temperature
C
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
1
0.20
0.10
0.05
SINGLE PULSE
P
0.02
0.01
DM
(THERMAL RESPONSE)
0.1
t
1
t
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLR3714/IRLU3714
150
120
90
60
30
0
I
1 5V
D
TOP
5.9A
10A
14A
BOTTOM
DRIVER
L
V
G
DS
D.U.T
AS
R
+
V
D D
-
I
A
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
( C)
Starting T , Junction Temperature
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
4.5 V
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRLR3714/IRLU3714
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRLR3714/IRLU3714
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
2.38 (.09 4)
2.19 (.08 6)
6.73 (.265 )
6.35 (.250 )
1.14 (.045)
0.89 (.035)
- A
-
1.27 (.050 )
0.88 (.035 )
5 .46 (.215 )
5 .21 (.205 )
0.58 (.02 3)
0.46 (.01 8)
4
6.4 5 (.2 45)
5.6 8 (.2 24)
6.2 2 (.2 45)
5.9 7 (.2 35)
10 .42 (.4 10 )
9.40 (.37 0)
1.02 (.04 0)
1.64 (.02 5)
LE AD A SS IG N M E NTS
1 - G A TE
1
2
3
2 - D R A IN
0 .51 (.02 0)
M IN.
- B
-
3 - S O U R CE
4 - D R A IN
1 .5 2 (.06 0)
1 .1 5 (.04 5)
0.89 (.035 )
0.64 (.025 )
3X
0 .5 8 (.0 23)
0 .4 6 (.0 18)
1.1 4 (.0 45)
0.7 6 (.0 30)
2X
0.25 (.01 0)
M
A M B
N O TE S :
2.28 (.09 0)
1
2
3
4
D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5 M , 1 982 .
C O N TR O LL ING D IM EN SIO N : IN C H .
4 .57 (.18 0)
C O N FO R MS TO JE D E C O U TLIN E TO -252 AA .
D IM E N S IO N S SH O W N A R E B EF O R E S O LD ER D IP ,
S O LD ER D IP M A X. +0.16 (.0 06).
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WITH ASSEMBLY
LOT CODE 1234
RECTIFIER
ASSEMBLED ON WW 16,
INTERNATIONAL
DAT E CODE
YEAR 9 = 1999
WEEK 16
IRFU120
916A
34
1999
LOGO
IN THE ASSEMBLY LINE "
A"
12
LINE A
ASSEMBLY
LOT CODE
8
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IRLR3714/IRLU3714
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
6.73 (.265 )
6.35 (.250 )
2 .3 8 (.0 94)
2 .1 9 (.0 86)
- A
-
0 .58 (.02 3)
0 .46 (.01 8)
1 .27 (.050)
0 .88 (.035)
5.46 (.21 5)
5.21 (.20 5)
LEA D ASS IG N M E NTS
4
1 - G A TE
2 - D R AIN
6.45 (.245)
3 - S O UR C E
4 - D R AIN
5.68 (.224)
6.22 (.245 )
5.97 (.235 )
1.5 2 (.060)
1.1 5 (.045)
1
2
3
- B
-
N O TES :
1
2
3
4
DIM E NS IO N IN G & TO LE RAN C IN G P ER AN SI Y14 .5M , 19 82.
CO N TRO LLIN G DIME NSIO N : INC H .
2.28 (.0 90)
1.91 (.0 75)
9 .65 (.38 0)
8 .89 (.35 0)
CO N FO R MS TO JED EC O U TLIN E TO-2 52AA .
DIME NS IO N S SHO W N AR E B EFO R E S OL D ER DIP,
SO LD ER D IP M AX. +0.16 (.006).
1.14 (.0 45)
0.76 (.0 30)
1.14 (.045)
0.89 (.035)
3X
0.89 (.035)
0.64 (.025)
3X
0.25 (.010)
M
A M B
0.58 (.023 )
0.46 (.018 )
2.28 (.09 0)
2X
I-Pak (TO-251AA) Part Marking Information
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9
IRLR3714/IRLU3714
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED D IRECTIO N
FEED DIR ECTION
N O TES
:
1. CO NTRO LLING D IMENSIO N : MILLIMETER.
2. ALL D IM EN SION S ARE SHO W N IN M ILLIM ETERS ( INCHES ).
3. OU TLINE C ON FO RMS TO EIA-481 & EIA-541.
13 INCH
16 m m
NO TES :
1. OU TLINE CON FO RM S TO EIA-481.
Notes:
When mounted on 1" square PCB ( FR-4 or G-10
Material ). For recommended footprint and
Repetitive rating; pulse width limited by
max. junction temperature.
soldering techniques refer to application note #AN-994.
Starting TJ = 25°C, L = 0.69 mH
RG = 25Ω, IAS = 14A.
ꢀCalculated continuous current based on maximum
allowable junction temperature; Package limitation
current is 30A
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Data and specifications subject to change without notice.
These products have been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/01
10
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