IRLR3802PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRLR3802PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总10页 (文件大小：278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95089A
IRLR3802PbF
IRLU3802PbF
HEXFET® Power MOSFET
Applications
l High Frequency 3.3V and 5V input Point-
of-Load Synchronous Buck Converters
l Power Management for Netcom,
Computing and Portable Applications.
l Lead-Free
VDSS
12V
RDS(on) max
Qg
27nC
8.5mΩ
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRLR3802
I-Pak
IRLU3802
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
12
V
VGS
Gate-to-Source Voltage
± 12
V
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
84
60
A
320
PD @TC = 25°C
PD @TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
88
44
W
W
0.59
mW/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 175
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
1.7
Units
RθJC
RθJA
RθJA
–––
–––
–––
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
40
°C/W
110
Notes through are on page 9
www.irf.com
1
12/7/04
IRLR/U3802PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
12 ––– –––
––– 0.009 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
V
VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ
–––
––– ––– 30
0.6 ––– 1.9
6.5 8.5
VGS = 4.5V, ID = 15A
VGS = 2.8V, ID = 12A
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
VGS(th)
Gate Threshold Voltage
V
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
––– -3.2 ––– mV/°C
––– ––– 100
VDS = 9.6V, VGS = 0V
VDS = 9.6V, VGS = 0V, TJ = 125°C
VGS = 12V
µA
IDSS
IGSS
Drain-to-Source Leakage Current
––– ––– 250
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
––– ––– 200
nA
––– ––– -200
VGS = -12V
gfs
Qg
31
––– –––
S
VDS = 6.0V, ID = 12A
––– 27 41
Qgs1
Pre-Vth Gate-Source Charge
Post-Vth Gate-Source Charge
Gate-to-Drain Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.6 –––
2.0 –––
10 –––
11 –––
12 –––
28 –––
11 –––
14 –––
21 –––
17 –––
VDS = 6.0V
VGS = 5.0V
Qgs2
Qgd
nC ID = 6.0A
See Fig.16
Qgodr
Gate Charge Overdrive
Qsw
Switch Charge (Qgs2 + Qgd
Output Charge
)
Qoss
td(on)
tr
nC VDS = 10V, VGS = 0V
Turn-On Delay Time
Rise Time
VDD = 6.0V, VGS = 4.5V
ns
ID = 12A
td(off)
tf
Turn-Off Delay Time
Fall Time
Clamped Inductive Load
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
––– 2490 –––
––– 2150 –––
––– 530 –––
VGS = 0V
pF
VDS = 6.0V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
300
20
Units
mJ
A
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
Continuous Source Current
(Body Diode)
84
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
320
p-n junction diode.
––– 0.81 1.2
––– 0.65 –––
V
TJ = 25°C, IS = 12A, VGS = 0V
TJ = 125°C, IS = 12A, VGS = 0V
TJ = 25°C, IF = 12A, VR=20V
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 52
––– 54
––– 50
––– 50
78
81
75
75
ns
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 12A, VR=20V
nC di/dt = 100A/µs
Qrr
2
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IRLR/U3802PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
4.5V
3.5V
2.5V
2.3V
2.0V
1.8V
4.5V
3.5V
2.5V
2.3V
2.0V
1.8V
BOTTOM 1.5V
BOTTOM 1.5V
1
1.5V
1
1.5V
0.1
0.01
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
1.5
I
= 84A
D
V
= 4.5V
T
= 25°C
GS
J
100
10
1
T
= 175°C
J
1.0
V
= 5.0V
DS
20µs PULSE WIDTH
0
0.5
1.0
2.0
3.0
4.0
5.0
6.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
V
, Gate-to-Source Voltage (V)
, Junction Temperature (°C)
GS
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRLR/U3802PbF
12
10
8
100000
V
C
= 0V,
f = 1 MHZ
GS
I = 6.0A
D
V
= 12V
= C + C
,
C
SHORTED
DS
iss
gs
gd
ds
C
= C
rss
gd
C
= C + C
oss
ds
gd
10000
1000
100
6
Ciss
Coss
Crss
4
2
0
0
10
Q
20
30
40
50
1
10
100
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100.0
10.0
1.0
100µsec
T
= 175°C
J
1msec
10msec
T
= 25°C
J
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
1
0.1
0
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRLR/U3802PbF
LD
VDS
100
80
60
40
20
0
LIMITED BY PACKAGE
VDD
D.U.T
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
Fig 10a. Switching Time Test Circuit
VDS
90%
25
50
75
100
125
150
175
T
, Case Temperature (°C)
C
10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on)
td(off)
tf
tr
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLR/U3802PbF
5000
4000
3000
2000
1000
0
ID
8.0A
14A
15V
TOP
BOTTOM 20A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
1.4
50KΩ
1.2
.2µF
12V
.3µF
I
= 250µA
D
1.0
0.8
0.6
0.4
0.2
+
V
DS
D.U.T.
-
V
GS
3mA
I
I
D
G
Current Sampling Resistors
Fig 14. Gate Charge Test Circuit
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
T
J
Fig 13. Threshold Voltage Vs. Temperature
6
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IRLR/U3802PbF
Driver Gate Drive
P.W.
Period
Period
D =
D.U.T
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 16. Gate Charge Waveform
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7
IRLR/U3802PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WIT H AS S E MBL Y
LOT CODE 1234
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 9 = 1999
WEE K 16
IRFU120
916A
12
34
LINE A
Note: "P" in assembly lineposition
ASSEMBLY
LOT CODE
indicates "L ead-Free"
OR
PART NUMBER
DAT E CODE
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
12 34
YEAR 9 = 1999
ASSEMBLY
LOT CODE
WEE K 16
A= ASSEMBLY SITE CODE
8
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IRLR/U3802PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
INTERNATIONAL
RECTIFIER
LOGO
WITH ASSEMBLY
LOT CODE 5678
ASSEMBLED ON WW19, 1999
IN THE ASSEMBLY LINE "A"
DATE CODE
YEAR 9 = 1999
WEEK 19
IRFU120
919A
78
56
LINE A
ASSEMBLY
LOT CODE
Note: "P" inassemblyline
position indicates "Lead-Free"
OR
PART NUMBER
DATE CODE
P = DE S IGNAT E S LE AD-F R EE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
56 78
YEAR 9 = 1999
ASSEMBLY
LOT CODE
WEEK 19
A= ASSEMBLY SITE CODE
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9
IRLR/U3802PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 1.4mH
RG = 25Ω, IAS = 20A.
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrialmarket.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
10
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