IRLR8103TRPBF [INFINEON]
Power Field-Effect Transistor, 89A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3;
| 型号： | IRLR8103TRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 89A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 晶体 晶体管 功率场效应晶体管 开关 脉冲 |
| 文件： | 总8页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-94021C
IRLR8103V
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
D
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
applications
• 100% RG Tested
G
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
S
D-Pak
DEVICE CHARACTERISTICSꢀ
The IRLR8103V has been optimized for all parameters
that are critical in synchronous buck converters including
IRLR8103V
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
7.9 mΩ
27 nC
12 nC
RDS(on)
QG
The IRLR8103V offers an extremely low combination of
Qsw & RDS(on) for reduced losses in both control and
synchronous FET applications.
QSW
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
QOSS
29nC
Absolute Maximum Ratings
Parameter
Symbol
IRLR8103V
Units
VDS
30
Drain-Source Voltage
V
VGS
±20
Gate-Source Voltage
Continuous Drain or Source Current
(VGS > 10V)
TC = 25°C
TC= 90°C
91
I
D
A
63
I
363
Pulsed Drain Current
DM
TC = 25°C
TC = 90°C
115
Power Dissipation
P
W
°C
A
D
60
TJ , T
IS
-55 to 150
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
STG
91
ISM
363
Thermal Resistance
Parameter
Symbol
RθJA
Typ.
Max.
50
Units
–––
–––
Maximum Junction-to-Ambient
Maximum Junction-to-Case
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°C/W
RθJC
1.09
1
10/22/04
IRLR8103V
Electrical Characteristics
Parameter
Symbol Min Typ Max Units
Conditions
VGS = 0V, ID = 250µA
VGS = 10V, ID = 15A
BVDSS
RDS(on)
Drain-to-Source Breakdown Voltage
Static Drain-Source
30
––– –––
V
––– 6.9 9.0
Ω
m
V
V
GS = 4.5V, ID = 15A
DS = VGS, ID = 250µA
On-Resistance
––– 7.9 10.5
1.0 ––– 3.0
VGS(th)
IDSS
Gate Threshold Voltage
V
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0
Drain-to-Source Leakage Current
––– ––– 50
µA
––– ––– 20
––– ––– 100
µA
V
V
DS = 24V, VGS = 0, TJ = 100°C
GS = ± 20V
IGSS
QG
Gate-Source Leakage Current
Total Gate Charge, Control FET
Total Gate Charge, Synch FET
Pre-Vth Gate-Source Charge
Post-Vth Gate-Source Charge
Gate to Drain Charge
Switch Charge (Qgs2 + Qgd)
Output Charge
––– ––– ±100 nA
VGS = 5V, ID = 15A, VDS = 16V
GS = 5V, VDS < 100mV
–––
–––
27 –––
23 –––
V
QG
QGS1
QGS2
QGD
QSW
QOSS
RG
––– 4.7 –––
––– 2.0 –––
––– 9.7 –––
nC
V
DS = 16V, ID = 15A
–––
–––
12 –––
29 –––
VDS = 16V, VGS = 0
Gate Resistance
0.8 ––– 3.1
Ω
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
10 –––
–––
VDD = 16V
Rise Time
9
ID = 15A
ns
Turn-Off Delay Time
24 –––
18 –––
VGS = 5.0V
Fall Time
Clamped Inductive Load
Ciss
Coss
Crss
Input Capacitance
––– 2672 –––
––– 1064 –––
––– 109 –––
VGS = 16V, VGS=0
pF
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Rating & Characteristics
Parameter
Diode Forward Voltage
Symbol Min Typ Max Units
Conditions
IS = 15A , VGS = 0V
VSD
––– 0.9 1.3
––– 103 –––
V
Reverse Recovery Charge
Qrr
nC di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IF = 15A
Qrr(s)
Reverse Recovery Charge
(with Parallel Schottky)
–––
96 –––
nC di/dt = 700A/µs , (with 10BQ040)
VDS= 16V, VGS = 0V, IF = 15A
Notes:
ꢀ
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 15A.
Rθ is measured at TJ approximately 90°C
2
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IRLR8103V
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM2.7V
BOTTOM2.7V
2.7V
2.7V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1000
15A
I =
D
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 150 C
J
100
V
= 15V
DS
20µs PULSE WIDTH
V
=10V
GS
10
2.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
3.0
4.0
5.0 6.0
7.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRLR8103V
5000
6
5
4
3
2
1
0
V
= 0V,
f = 1MHz
C
GS
C
I =
D
15A
V
V
= 24V
= 15V
= C + C
gs
SHORTED
ds
DS
DS
iss
gd ,
C
= C
gd
= C + C
rss
C
4000
3000
2000
1000
0
oss ds
gd
C
iss
C
oss
C
rss
1
10
100
0
5
10
15
20
25
30
V
, Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
1000
100
10
°
T = 150 C
J
10us
100us
°
T = 25 C
J
1ms
10ms
°
T = 25 C
J
C
°
T = 150 C
Single Pulse
V
= 0 V
GS
2.0
1
0.1
0.0
1
10
100
0.4
0.8
1.2
1.6
2.4
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
FFiigg 77.. TTyyppiiccaall SSoouurrccee--DDrraaiinn DDiiooddee
FFoorrwwaarrdd VVoolltaaggee
Fig 8. Maximum Safe Operating Area
4
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IRLR8103V
RD
VDS
100
80
60
40
20
0
LIMITED BY PACKAGE
VGS
10V
D.U.T.
RG
+
-
VDD
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fiigg 1100aa.. SSwwiittcchhiinngg TTiimmee TTeesstt CCiirrccuuiitt
V
DS
90%
25
50
75
100
125
150
°
10%
T , Case Temperature( C)
C
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
1
D = 0.50
0.20
0.10
P
2
DM
0.1
0.05
t
1
SINGLE PULSE
0.02
0.01
t
2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLR8103V
0.016
0.014
0.012
0.014
0.012
0.010
0.008
0.006
I
= 15A
VGS = 4.5V
0.010
D
VGS = 10V
0.008
0.006
0.0
2.0
4.0
6.0
8.0
0
50
100 150 200 250 300 350
, Drain Current ( A )
V
Gate -to -Source Voltage (V)
GS,
I
D
Fig 13. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
Q
G
VGS
50KΩ
.2µF
12V
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
G
V
GS
3mA
Charge
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
6
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IRLR8103V
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
- A -
1.27 (.050)
0.88 (.035)
5.46 (.215)
5.21 (.205)
0.58 (.023)
0.46 (.018)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
10.42 (.410)
9.40 (.370)
1.02 (.040)
1.64 (.025)
LEAD ASSIGNMENTS
1
2
3
1 - GATE
0.51 (.020)
MIN.
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.52 (.060)
1.15 (.045)
0.89 (.035)
0.64 (.025)
3X
0.58 (.023)
0.46 (.018)
1.14 (.045)
0.76 (.030)
2X
0.25 (.010)
M A M B
NOTES:
2.28 (.090)
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
4.57 (.180)
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WIT H AS S E MB L Y
LOT CODE 1234
RECTIFIER
ASSEMBLED ON WW 16, 1999
INTERNATIONAL
DATE CODE
YEAR 9 = 1999
WE E K 16
IRFR120
916A
34
LOGO
IN THE ASSEMBLY LINE "A"
12
LINE A
No te : "P" in assembly line
pos ition indicates "Lead-Free"
AS S E MB L Y
LOT CODE
OR
PART NUMBER
DAT E CODE
INTERNATIONAL
RECTIFIER
LOGO
IRFR120
P916A
34
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
YEAR 9 = 1999
12
AS S E MB L Y
LOT CODE
WE E K 16
A = AS S E MB L Y S I T E CODE
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7
IRLR8103V
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/04
8
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