IRLTS2242PBF [INFINEON]
Industry-Standard TSOP-6 Package; 行业标准TSOP -6封装
| 型号： | IRLTS2242PBF |
| 厂家： | 
Infineon |
| 描述： | Industry-Standard TSOP-6 Package |
| 文件： | 总8页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97729A
IRLTS2242PbF
HEXFET® Power MOSFET
VDS
-20
V
V
A
D
1
2
6
5
4
VGS max
D
D
2
±1
RDS(on) max
(@VGS = -4.5V)
32
m
D
RDS(on) max
(@VGS = -2.5V)
Qg typ
3
55
12
m
G
S
TSOP-6
nC
A
Top View
ID
-6.9
(@TA= 25°C)
Applications
l Battery operated DC motor inverter MOSFET
l System/Load Switch
Features and Benefits
Features
Benefits
Industry-Standard TSOP-6 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Multi-Vendor Compatibility
Environmentally Friendlier
Increased Reliability
results in
MSL1, Consumer Qualification
Orderable part number
Package Type
Standard Pack
Note
Form
Quantity
IRLTS2242TRPbF
TSOP-6
Tape and Reel
3000
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
-20
±12
-6.9
-5.5
-55
V
V
GS
I
I
I
@ TA = 25°C
D
D
@ TA = 70°C
A
DM
P
P
@TA = 25°C
@TA = 70°C
Power Dissipation
Power Dissipation
2.0
D
D
W
1.3
Linear Derating Factor
Operating Junction and
0.02
-55 to + 150
W/°C
°C
T
J
T
Storage Temperature Range
STG
Notes through are on page 2
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1
02/23/12
IRLTS2242PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = -250μA
––– mV/°C Reference to 25°C, ID = -1mA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
-20
–––
–––
–––
-0.4
–––
–––
–––
–––
–––
8.5
–––
9.4
26
–––
V
VDSS/TJ
RDS(on)
32
55
VGS = -4.5V, ID = -6.9A
VGS = -2.5V, ID = -5.5A
m
45
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
–––
-3.8
–––
–––
–––
–––
–––
12
-1.1
V
VDS = VGS, ID = -10μA
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
-1.0
μA
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = -12V
-150
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
-100
nA
100
VGS = 12V
gfs
Qg
–––
–––
–––
–––
S
nC
VDS = -10V, ID = -5.5A
VDS = -10V
–––
–––
–––
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Qgs
Qgd
1.5
4.3
VGS = -4.5V
ID = -5.5A
RG
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
17
5.8
18
–––
–––
VDD = -10V, VGS = -4.5V
–––
–––
–––
–––
–––
–––
ID = -5.5A
ns
td(off)
Turn-Off Delay Time
Fall Time
81
RG = 6.8
tf
68
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
905
280
200
VGS = 0V
VDS = -10V
ƒ = 1.0KHz
pF
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
D
S
–––
–––
-2.0
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
ISM
–––
–––
-55
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
41
-1.2
62
V
T = 25°C, I = -5.5A, V = 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = -5.5A, VDD = -16V
J F
Qrr
ton
di/dt = 100A/μs
16
24
nC
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
Max.
Units
R
Junction-to-Ambient
–––
62.5
°C/W
JA
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400μs; duty cycle 2%.
When mounted on 1 inch square copper board.
2
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IRLTS2242PbF
100
10
1
100
10
1
VGS
-10V
VGS
-10V
TOP
TOP
-4.50V
-2.50V
-2.25V
-2.00V
-1.80V
-1.55V
-1.40V
-4.50V
-2.50V
-2.25V
-2.00V
-1.80V
-1.55V
-1.40V
BOTTOM
BOTTOM
-1.40V
-1.40V
60μs PULSE WIDTH
Tj = 150°C
60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
1.4
I
= -6.9A
D
V
= -4.5V
GS
1.2
1.0
0.8
0.6
10
T
= 150°C
J
T
= 25°C
J
V
= -10V
DS
60μs PULSE WIDTH
1.0
0
1
2
3
4
5
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
10000
1000
100
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = -5.5A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
= C
rss
oss
gd
= C + C
V
V
V
= -16V
= -10V
= -4.0V
DS
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
C
C
oss
rss
1
10
-V , Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
30
Q
Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRLTS2242PbF
100
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
10
100μsec
T
= 150°C
J
1msec
1
T
= 25°C
J
1
10msec
0.1
0.01
DC
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
1.2
GS
0.1
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.4
V
, Drain-to-Source Voltage (V)
DS
-V , Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
8
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
6
4
2
0
I
I
I
I
= -10μA
= -250μA
= -1.0mA
= -10mA
D
D
D
D
25
50
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
T
, Ambient Temperature (°C)
T , Temperature ( °C )
J
A
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
Case Temperature
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
A
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRLTS2242PbF
70
60
50
40
30
20
10
0
450
400
350
300
250
200
150
100
50
I
= -6.9A
D
Vgs = -2.5V
T
= 125°C
J
Vgs = -4.5V
T
= 25°C
J
0
0
5
10
15
20
0
10
20
30
40
50
60
-I , Drain Current (A)
D
-V
Gate -to -Source Voltage (V)
GS,
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Typical On-Resistance vs. Drain Current
16000
14000
12000
10000
8000
6000
4000
2000
0
120
I
D
TOP
-1.3A
-2.0A
BOTTOM -5.5A
100
80
60
40
20
0
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
25
50
75
100
125
150
Time (sec)
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 15. Typical Power vs. Time
Driver Gate Drive
P.W.
Period
Period
D =
D.U.T *
P.W.
+
*
=10V
V
GS
CircuitLayoutConsiderations
LowStrayInductance
Ground Plane
LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
Driver same type as D.U.T.
Body Diode
InductorCurrent
Forward Drop
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
I
SD
Ripple 5%
* VGS = 5V for Logic Level Devices
* Reverse Polarity of D.U.T for P-Channel
Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
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5
IRLTS2242PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 17a. Gate Charge Test Circuit
Fig 17b. Gate Charge Waveform
L
V
DS
I
AS
D.U.T
R
G
V
DD
I
A
AS
DRIVER
-VGS
0.01
t
p
t
p
V
(BR)DSS
15V
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
RD
VDS
t
t
r
t
t
f
d(on)
d(off)
VGS
V
GS
D.U.T.
10%
RG
-
VDD
+
-VGS
90%
PulseWidth µs
Duty Factor
V
DS
Fig 19a. Switching Time Test Circuit
Fig 19b. Switching Time Waveforms
6
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IRLTS2242PbF
TSOP-6 Package Outline
TSOP-6 Part Marking Information
DATE CODE MARKING INSTRUCTIONS
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRLTS2242PbF
TSOP-6 Tape and Reel Information
8mm
FEED DIRECTION
4mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Qualification information†
Cons umer††
(per JEDEC JESD47F ††† guidelines )
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
TSOP-6
(per IP C/JE DE C J-S T D-020D†††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
††
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/12
8
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