IRLU8715CPBF [INFINEON]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;
| 型号： | IRLU8715CPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| 文件： | 总9页 (文件大小：270K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97107A
IRLR8715CPbF
HEXFET® Power MOSFET
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom
VDSS RDS(on) max
Qg
6.9nC
9.4m
25V
:
D
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
S
D
G
D-Pak
l Lead-Free
IRLR8715CPbF
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Max.
25
Parameter
Units
V
VDS
Drain-to-Source Voltage
V
Gate-to-Source Voltage
± 20
51
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ TC = 25°C
D
@ TC = 100°C
36
200
44
A
D
DM
Maximum Power Dissipation
Maximum Power Dissipation
P
P
@TC = 25°C
W
D
D
@TC = 100°C
22
Linear Derating Factor
Operating Junction and
0.29
-55 to + 175
W/°C
°C
T
T
J
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter
Typ.
–––
Max.
3.4
Units
Junction-to-Case
Rθ
Rθ
Rθ
JC
JA
JA
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
–––
50
°C/W
–––
110
Notes through are on page 10
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1
9/18/06
IRLR8715CPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
46
–––
–––
V
∆ΒVDSS/∆TJ
RDS(on)
17
mΩ
7.5
9.4
VGS = 10V, ID = 21A
11.8 14.8
2.35
VGS = 4.5V, ID = 17A
VDS = VGS, ID = 25µA
VGS(th)
Gate Threshold Voltage
1.9
-7.0
–––
–––
–––
–––
–––
6.9
1.6
1.2
2.5
1.6
3.7
3.2
2.2
7.2
32
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
1.0
150
100
-100
–––
10
µA VDS = 20V, VGS = 0V
V
DS = 20V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA VGS = 20V
VGS = -20V
gfs
S
VDS = 13V, ID = 17A
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
–––
–––
–––
–––
–––
–––
3.8
VDS = 13V
nC VGS = 4.5V
ID = 17A
Gate Charge Overdrive
See Fig.16
Switch Charge (Qgs2 + Qgd
Output Charge
)
nC
VDS = 10V, VGS = 0V
Ω
Gate Resistance
Turn-On Delay Time
Rise Time
td(on)
tr
td(off)
tf
–––
–––
–––
–––
–––
–––
–––
VDD = 13V, VGS = 4.5V
ID = 17A
Turn-Off Delay Time
Fall Time
7.5
3.9
830
220
120
ns Clamped Inductive Load
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VGS = 0V
pF VDS = 13V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
Typ.
–––
–––
–––
Max.
Units
mJ
A
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
27
17
Repetitive Avalanche Energy
EAR
4.4
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
51
IS
Continuous Source Current
–––
–––
MOSFET symbol
(Body Diode)
A
showing the
ISM
Pulsed Source Current
–––
–––
200
integral reverse
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
7.8
4.9
1.0
12
V
T = 25°C, I = 17A, V
= 0V
GS
J
S
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 17A, VDD = 13V
J F
Qrr
ton
2
7.4
nC di/dt = 300A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRLR8715CPbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.7V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.7V
BOTTOM
BOTTOM
1
2.7V
2.7V
≤ 60µs PULSE WIDTH
Tj = 25°C
≤ 60µs PULSE WIDTH
Tj = 175°C
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
2.0
1.5
1.0
0.5
I
= 21A
D
V
= 10V
GS
100
10
1
T
= 175°C
J
T
= 25°C
J
V
= 15V
DS
≤ 60µs PULSE WIDTH
0.1
0.0
2.0
4.0
6.0
8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
V
, Gate-to-Source Voltage (V)
GS
T
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRLR8715CPbF
10000
12
10
8
V
C
= 0V,
f = 1 MHZ
GS
I = 17A
D
= C + C , C SHORTED
iss
gs
gd ds
V
V
V
= 20V
= 13V
= 5.0V
C
= C
DS
DS
DS
rss
gd
C
= C + C
oss
ds
gd
6
1000
Ciss
4
Coss
Crss
2
0
100
0
2
4
6
8
10
12
14
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
1msec
100
10
1
T
= 175°C
J
T
= 25°C
J
10msec
1
T = 25°C
C
T = 175°C
J
V
= 0V
GS
1.8
Single Pulse
0.1
0.2
0.6
1.0
1.4
2.2
0.1
1
10
100
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRLR8715CPbF
2.4
2.0
1.6
1.2
0.8
0.4
60
50
40
30
20
10
0
LIMITED BY PACKAGE
I
= 25µA
D
25
50
75
100
125
150
175
-75 -50 -25
0
25 50 75 100 125 150 175
T
, Case Temperature (°C)
C
T , Temperature ( °C )
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Threshold Voltage Vs. Temperature
Case Temperature
10
D = 0.50
0.20
1
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τι (sec)
0.137444 0.00001
0.519232 0.00002
1.553532 0.00034
1.189792 0.001289
0.10
0.05
τJ
τC
τJ
τ1
τ
τ
τ
3 τ3
τ4
2τ2
τ1
τ4
0.02
0.01
0.1
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
, Rectangular Pulse Duration (sec)
0.001
0.01
t
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLR8715CPbF
26
24
22
20
18
16
14
12
10
8
120
100
80
60
40
20
0
I
= 21A
I
D
D
TOP
4.1A
6.7A
17A
BOTTOM
T
T
= 125°C
= 25°C
J
J
6
2.0
4.0
6.0
8.0
10.0
25
50
75
100
125
150
175
V
, Gate-to-Source Voltage (V)
GS
Starting T , Junction Temperature (°C)
J
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy
vs. Drain Current
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
0.01Ω
t
p
I
AS
Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
LD
VDS
VDS
90%
+
-
VDD
D.U.T
10%
VGS
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
6
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IRLR8715CPbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 16b. Gate Charge Waveform
Fig 16a. Gate Charge Test Circuit
Driver Gate Drive
P.W.
Period
D =
D.U.T
Period
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
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7
IRLR8715CPbF
D-Pak (TO-252AA) Package Outline
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WITH ASSEMBLY
LOT CODE 1234
ASSEMBLED ON WW 16, 2001
IN THE ASSEMBLY LINE "A"
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
YEAR 1 = 2001
WEEK 16
IRFR120
116A
12
34
LINE A
Note: "P" in assembly line position
AS S E MBL Y
LOT CODE
indicates "L ead-F ree"
"P" in assembly lineposition indicates
"Lead-F ree" qualification to the cons umer-level
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
OR
IRFR120
12 34
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
P = DESIGNATES LEAD-FREE
PRODUCT QUALIFIED TOTHE
CONSUMER LEVEL (OPTIONAL)
ASSEMBLY
LOT CODE
YEAR 1 = 2001
WEEK 16
A = AS S E MB L Y S IT E CODE
8
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IRLR8715CPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Calculated continuous current based on maximum allowable
Repetitive rating; pulse width limited by
max. junction temperature.
junction temperature. Package limitation current is 42A.
Starting TJ = 25°C, L = 0.19mH, RG = 25Ω,
ꢀ When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to
application note #AN-994.
I
AS = 17A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Rθ is measured at TJ approximately at 90°C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/06
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9
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