IRSM005-301MH [INFINEON]
Half-Bridge IPM for Low Voltage;
| 型号： | IRSM005-301MH |
| 厂家： | 
Infineon |
| 描述： | Half-Bridge IPM for Low Voltage |
| 文件： | 总11页 (文件大小：503K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRSM005-301MH
Half-Bridge IPM for Low Voltage
Applications
30A, 100V
Description
The IRSM005-301MH is a general purpose half-bridge with integrated gate driver in an attractive 7x8mm
PQFN package. It is a general purpose building block suitable for a variety of low voltage applications where
power density is of critical importance. Typical examples would be advanced motor drives, dc-to-ac and dc-
to-dc converters.
Features
Package with low thermal resistance and minimal parasitics
Low on-resistance HEXFETs: 16 m typ.
Undervoltage lockout on Vcc and Vbs
Independent gate drive in phase with logic input
Gate drive supply range from 10V to 20V
Propagation delay matched to defined spec
3.3V, 5V and 15V logic input compatible
RoHS compliant
Internal Electrical Schematic
HO G1
26, 27
1
18 to 23
VS
VB
V+
25
24
Ho
2
VCC
4
10, 16, 17
Gate
Driver
IC
HIN
LIN
Vs
5
3, 6, 8
COM
Lo
IRSM005-301MH
7
9
11 to 15
V-
LO G2
Ordering Information
Orderable Part Number
IRSM005-301MH
Package Type
Form
Tray
Quantity
1300
PQFN 7x8mm
PQFN 7x8mm
IRSM005-301MHTR
Tape and Reel
2000
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www.irf.com © 2014 International Rectifier
March 4, 2014
IRSM005-301MH
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are
not tested at manufacturing. All voltage parameters are absolute voltages referenced to VSS unless otherwise
stated in the table. The thermal resistance rating is measured under board mounted and still air conditions.
Symbol
Description
Min
---
Max
100
Unit
V
VDS
MOSFET Drain-to-Source Voltage
Maximum DC current per MOSFET @ TC=25°C (Note1)
Maximum Power dissipation per MOSFET @ TC =100°C
Maximum Operating Junction Temperature
Storage Temperature Range
IO
---
30
A
Pd
W
°C
°C
V
---
13.5
TJ (MOSFET & IC)
---
150
TS
-40
150
VB
High side floating supply voltage
High side floating supply offset voltage
Low Side fixed supply voltage
-0.3
VB - 20
-0.3
-0.3
VS + 20
VB +0.3
20
VS
V
VCC
VIN
V
Logic input voltage LIN, HIN
VCC+0.3V
V
Note1: Calculated based on maximum junction temperature. Bond wires current limit is 20A
Inverter Static Electrical Characteristics
VBIAS (VCC, VBS)=15V, TJ=25ºC, unless otherwise specified.
Symbol
V(BR)DSS
VGS(TH)
Description
Min
100
2.0
---
Typ
---
Max
---
Units Conditions
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
V
V
HIN=LIN=0V, ID=250µA
3.0
16
4.0
21
ID=100µA
ID=10A, TJ=25°C
ID=10A, TJ=150°C
RDS(ON)
Drain-to-Source Voltage
mΩ
μA
---
35
---
---
20
---
HIN=LIN=0V, V+=100V
HIN=LIN=0V, V+=100V,
TJ=125°C
IDSS
Zero Gate Voltage Drain Current
---
250
---
--
0.7
0.6
---
0.82
---
IF=10A
MOSFET Diode Forward Voltage
Drop
VSD
IGSS
V
---
---
IF=10A, TJ=125°C
Gate to Source leakage
+/-100
nA
VGS=+/-20V
V+= 100V,
VCC=+15V to 0V
RBSOA
QG
Reverse Bias Safe Operating Area
FULL SQUARE, limited by TJmax
Total gate charge
---
---
36
7
54
---
---
ID =26A
QGS
QGD
Gate to source charge
nC
mJ
V
DS = 20V
VGS=10V
Gate to drain charge
---
11
-
EAS
Single Pulse Avalanche Energy
6.1
2
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March 4, 2014
IRSM005-301MH
Recommended Operating Conditions Driver Function
For proper operation the device should be used within the recommended conditions. All voltages are absolute
referenced to COM. The VS offset is tested with all supplies biased at 15V differential. For more details, see
IRS2005 data sheet.
Symbol
VB
Definition
Min
VS+10
Note 1
10
Typ
VS+15
---
Max
VS+20
40
Units
V
High side floating supply voltage
High side floating supply offset voltage
Low side and logic fixed supply voltage
Logic input voltage LIN, HIN
VS
V
VCC
15
20
V
VIN
COM
1
---
VCC
---
V
HIN
High side PWM pulse width
---
µs
µs
Deadtime
Suggested dead time between HIN and LIN
0.3
0.5
---
Static Electrical Characteristics Driver Function
VBIAS (VCC, VBS)=15V, TJ=25ºC, unless otherwise specified. The VIN, and IIN parameters are
referenced to COM
Symbol
VIN,th+
VIN,th-
VBSUV+
VBSUV-
VBSUVH
VCCUV+
VCCUV-
VCCUVH
IQBS
Definition
Min
2.5
---
Typ
---
Max
---
Units
V
Positive going input threshold for LIN, HIN
Negative going input threshold for LIN, HIN
VBS supply undervoltage, Positive going threshold
VBS supply undervoltage, Negative going threshold
VBS supply undervoltage lock-out hysteresis
VCC/ supply undervoltage, Positive going threshold
VCC supply undervoltage, Negative going threshold
VCC supply undervoltage lock-out hysteresis
Quiescent VBS supply current
---
0.8
9.8
9.0
---
V
8.0
7.4
---
8.9
8.2
0.8
8.9
8.2
0.8
30
V
V
V
8.0
7.4
---
9.8
9.0
---
V
V
V
---
75
µA
µA
µA
IQCC
Quiescent VCC supply current
---
150
---
520
50
ILK
Offset Supply Leakage Current
---
VO=0V
VIN=Logic
“1”
IO+
IC high output short circuit current
IC low output short circuit current
200
420
290
600
---
---
PW<10us
VO=15V
VIN=Logic
“0”
IO-
PW<10us
IIN+
IIN-
Input bias current VIN=5V for LIN, HIN
Input bias current VIN=0V for LIN, HIN
---
---
4
10
1
µA
µA
0.5
3
www.irf.com © 2014 International Rectifier
March 4, 2014
IRSM005-301MH
Dynamic Electrical Characteristics Driver Function
VBIAS (VCC, VBS)=15V, TJ=25ºC, CL=1000pF unless otherwise specified. Driver only timing unless otherwise
specified.
Symbol
Description
Min
Typ
Max
Units Conditions
Input to Output propagation turn-on
delay time (see fig.3)
TON
---
160
220
ns
Input to Output propagation turn-off
delay time (see fig. 3)
TOFF
TR
---
---
150
70
220
170
ns
ns
Input to Output turn-on rise time
(see fig.3)
Input to Output turn-off fall time
(see fig. 3)
TF
---
---
35
---
95
50
ns
ns
Delay matching, HS and LS turn-
on/off
MT
Thermal and Mechanical Characteristics
Symbol
Description
Min
Typ
Max
Units Conditions
Thermal resistance, junction to
mounting pad, each MOSFET
Standard reflow-solder
process
Mounted on 50mm2 of
four-layer FR4 with 28 vias
Rth(J-B)
---
3.8
---
°C/W
°C/W
Thermal resistance, junction to
ambient, each MOSFET
Rth(J-A)
---
40
---
Input-Output Logic Level Table
HIN
HI
LIN
U,V,W
HI
LO
LO
HI
Shoot-through
LO
HI
**
V+
0
LO
* V+ if motor current is flowing into VS, 0 if current is flowing out of VS into the motor winding
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March 4, 2014
IRSM005-301MH
Module Pin-Out Description
Pin
Name
COM
VCC
HIN
LIN
LO
Description
3, 6, 8
Negative of Gate Drive Supply Voltage
15V Gate Drive Supply
2
4
Logic Input for High Side (Active High)
Logic Input for Low Side (Active High)
Low Side FET Gate
5
7
9
G2
Low Side Gate Drive Output
Phase Output
10, 16, 17
11 – 15
18 – 23
24
VS
V-
Low Side Source Connection
DC Bus
V+
G1
High Side Gate Drive Output
High Side FET Gate
25
HO
VS
26 – 27
1
Negative of Bootstrap Supply
Positive of Bootstrap Supply
VB
16 VS
17 VS
18-V+
19 V+
V- 15
V- 14
V- 13
20 V+
21 V+
V- 12
V- 11
22 V+
23 V+
24 G1
25 HO
VS 10
G2 9
28
COM 8
26 VS
27 VS
LO 7
COM
6
LIN HIN COM VCC
VB
1
5
4
3
2
BOTTOM OF PACKAGE VIEW
Exposed pad (Pin 28) has to be connected to COM for better electrical performance
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March 4, 2014
IRSM005-301MH
Figure 1: Typical Application Connection
1. Bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing
and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will
further improve performance.
2. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be
made based on IR Design tip DT04-4 or application note AN-1044.
50%
50%
HIN
LIN
ton
toff
t
tf
r
90%
90%
HO
LO
10%
10%
Figure 3. IC switching waveform
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March 4, 2014
IRSM005-301MH
Qualification
Industrial††
(per JEDEC JESD 47E)
Qualification Level
MSL3†††
(per IPC/JEDEC J-STD-020C)
Moisture Sensitivity Level
Class A (±200V)
(per JEDEC standard JESD22-A115A)
Machine Model
ESD
Class 2 (±2000V)
(per EIA/JEDEC standard EIA/JES-001A-2011)
Human Body Model
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/
†† Higher qualification ratings may be available should the user have such requirements. Please contact
your International Rectifier sales representative for further information.
††† Higher MSL ratings may be available for the specific package types listed here. Please contact your
International Rectifier sales representative for further information.
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March 4, 2014
IRSM005-301MH
Package Outline (Top & Side view)
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www.irf.com © 2014 International Rectifier
March 4, 2014
IRSM005-301MH
Package Outline (Bottom View, 1 of 2)
1. For mounting instruction see AN-1168.
2. For recommended PCB via design see AN-1091.
3. For recommended design, solder profile, integration and rework guidelines see AN-1028.
4. For board inspection guidelines see AN-1133.
Tape and Reel Details
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www.irf.com © 2014 International Rectifier
March 4, 2014
IRSM005-301MH
P2
Y
E1
P0
T
D0
F
B0 D1
W
K0
P1
A0
Section Y-Y
Y
Dimensions (mm)
Min Max
8.25 8.45
Code
A0
B0
D0
D1
E1
F
8.25
1.50
1.50
1.65
7.40
1.60
3.90
11.90
1.90
0.25
15.70
8.45
1.60
.—
1.85
7.60
K0
P0
P1
P2
T
1.80
4.10
12.10
2.10
0.35
W
16.30
10
www.irf.com © 2014 International Rectifier
March 4, 2014
IRSM005-301MH
Data and Specifications are subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
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March 4, 2014
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