IRSM515-025DA2 [INFINEON]
Integrated Power Module for Small Appliance Motor Drive Applications;
| 型号： | IRSM515-025DA2 |
| 厂家： | 
Infineon |
| 描述： | Integrated Power Module for Small Appliance Motor Drive Applications |
| 文件： | 总17页 (文件大小：638K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRSM505-025
IRSM515-025 Series
4.0Ω, 500V
Integrated Power Module for
Small Appliance Motor Drive Applications
Description
IRSM505-025 and IRSM515-025 are 3-phase Integrated Power Modules (IPM) designed for advanced appliance
motor drive applications such as energy efficient fans and pumps. These advanced IPMs offers a combination of
low RDS(on) Trench FREDFET technology and the industry benchmark half-bridge high voltage, rugged driver in a
familiar package. The modules are optimized for low EMI characteristics.
IRSM505-025 includes temperature feedback while IRSM515-025 does not.
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
500V 3-phase inverter including high voltage gate drivers
Integrated bootstrap functionality
Low 4.0Ω (max, 25°C) RDS(on) Trench FREDFET
Under-voltage lockout for all channels
Matched propagation delay for all channels
Temperature feedback via NTC (IRSM505-025 only)
Optimized dV/dt for loss and EMI trade offs
Open-source for single and leg-shunt current sensing
3.3V logic compatible and advanced input filter
Driver tolerant to negative transient voltage (-Vs)
Isolation 1900VRMS, 1min
RoHS Compliant
Certified by UL - File Number E252584
Standard Pack
Form
Series
NTC
Package Type
Product Name
Quantity
240
SOP23
DIP23
Tube
IRSM505-025PA
IRSM505-025DA
IRSM505-025DA2
IRSM515-025PA
IRSM515-025DA
IRSM515-025DA2
IRSM515-025DA4
IRSM505-025
Yes
Tube
240
DIP23A
SOP23
DIP23
Tube
240
Tube
240
Tube
240
IRSM515-025
No
DIP23A
DIP23C
Tube
240
Tube
240
1
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-025
IRSM515-025 Series
Internal Electrical Schematic
1 COM
2 VB1
1 COM
2 VB1
17 V+
17 V+
3 VCC1
3 VCC1
4 HIN1
5 LIN1
4 HIN1
Half-Bridge
HVIC
18 U/VS1
Half-Bridge
HVIC
18 U/VS1
5 LIN1
19 VR1
20 VR2
21 V/VS2
19 VR1
20 VR2
21 V/VS2
6 NC
6 NC
Integrated in HVIC
Integrated in HVIC
7 VB2
7 VB2
8 VCC2
9 HIN2
10 LIN2
8 VCC2
9 HIN2
10 LIN2
Half-Bridge
HVIC
Half-Bridge
HVIC
11 VTH
12 VB3
11 NC
12 VB3
22 VR3
22 VR3
13 VCC3
14 HIN3
15 LIN3
13 VCC3
14 HIN3
15 LIN3
Half-Bridge
HVIC
Half-Bridge
HVIC
23 W/VS3
23 W/VS3
16 NC
16 NC
IRSM505-025
IRSM515-025
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are not tested at
manufacturing. All voltage parameters are absolute voltages referenced to COM unless otherwise stated in the table.
Symbol
Description
Min
---
Max
500
Unit
BVDSS
MOSFET Blocking Voltage
V
IO @ TC=25°C
DC Output Current per MOSFET
Pulsed Output Current per MOSFET (Note 1)
Maximum Power Dissipation per MOSFET
Isolation Voltage (1min)
---
1.5
A
IOP @ TC =25°C
---
11
Pd @ TC=25°C
---
18
W
VRMS
°C
°C
°C
V
VISO
TJ
---
1900
150
Operating Junction Temperature
Operating Case Temperature
Storage Temperature
-40
TC
-40
150
TS
-40
150
VS1,2,3
VB1,2,3
VCC
VIN
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
Low Side and Logic Supply voltage
Input Voltage of LIN, HIN
VB1,2,3 - 20
-0.3
VB1,2,3 +0.3
525
V
-0.3
25
V
COM -0.3
VCC+0.3
V
Note 1: Pulse Width = 100µs, Single Pulse
2
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-025
IRSM515-025 Series
Recommended Operating Conditions
Symbol
Description
Min
---
Max
400
400
VS+20
16.5
5
Unit
V
V+
Positive DC Bus Input Voltage
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
Low Side and Logic Supply Voltage
Input Voltage of LIN, HIN, ITRIP, EN, FLT
PWM Carrier Frequency
VS1,2,3
VB1,2,3
VCC
(Note 2)
VS+12
13.5
0
V
V
V
VIN
V
Fp
---
20
kHz
Note 2: Logic operational for Vs from COM-8V to COM+500V. Logic state held for Vs from COM-8V to COM-VBS
.
Static Electrical Characteristics
(VCC-COM) = (VB-VS) = 15 V. TC = 25oC unless otherwise specified. The VIN and IIN parameters are referenced to COM and
are applicable to all six channels. The VCC parameters are referenced to COM. The VBS parameters are referenced to VS.
UV
UV
Symbol
Description
Min
Typ
Max
Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
500
---
---
V
TJ=25°C, ILK=250µA
ILKH
Leakage Current of High Side FET
12
µA
TJ=25°C, VDS=500V
Leakage Current of Low Side FET Plus
Gate Drive IC
ILKL
14
3.0
7.6
µA
Ω
TJ=25°C, VDS=500V
---
---
4.0
---
TJ=25°C, VCC=15V, Id=0.5A
RDS(on)
Drain to Source ON Resistance
TJ=150°C, VCC=15V, Id=0.5A
(Note 3)
Ω
VSD
Mosfet Body Diode Forward Voltage
Positive Going Input Threshold
Negative Going Input Threshold
---
2.2
---
0.8
---
---
---
V
V
V
TJ=25°C, VCC=15V, ID=0.5A
VIN,th+
VIN,th-
---
0.8
VCCUV+,
VBSUV+
VCC and VBS Supply Under-Voltage,
Positive Going Threshold
8
8.9
7.7
1.2
9.8
8.5
---
V
V
V
VCCUV-,
VBSUV-
V
CC and VBS supply Under-Voltage,
6.9
---
Negative Going Threshold
VCCUVH,
VBSUVH
VCC and VBS Supply Under-Voltage
Lock-Out Hysteresis
IQBS
Quiescent VBS Supply Current VIN=0V
Quiescent VBS Supply Current VIN=4V
Quiescent VCC Supply Current VIN=0V
Quiescent VCC Supply Current VIN=4V
Input Bias Current VIN=4V
---
---
---
---
---
---
42
42
60
60
4
µA
µA
mA
mA
µA
µA
IQBS, ON
IQCC
IQCC, ON
IIN+
1.7
1.8
5.9
---
4
18
2
VIN=3.3V
VIN=0V
IIN-
Input Bias Current VIN=0V
Internal Bootstrap Equivalent Resistor
Value
RBR
---
250
---
Ω
TJ=25°C
Note 3: Characterized, not tested at manufacturing
3
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-025
IRSM515-025 Series
Dynamic Electrical Characteristics
(VCC-COM) = (VB-VS) = 15 V. TC = 25oC unless otherwise specified.
Symbol
Description
Min
Typ
Max
Units
Conditions
Input to Output Propagation Turn-On
Delay Time
TON
---
0.8
1.5
µs
ID=120mA, V+=30V
See Fig.1
Input to Output Propagation Turn-Off
Delay Time
TOFF
---
0.9
1.5
µs
TFIL,IN
DT
Input Filter Time (HIN, LIN)
Deadtime Inserted
200
---
300
400
---
---
ns
ns
VIN=0 & VIN=3.3V
VIN=0 & VIN=3.3V without
external deadtime
EON
Turn-on switching energy loss
Turn-off switching energy loss
Recovery energy loss
---
---
---
---
---
---
25
5
---
---
---
---
---
---
µJ
µJ
µJ
µJ
µJ
µJ
V+=320V, ID=0.5A, L=40mH,
TC=25°C (Note 4)
EOFF
EREC
5
EON,150
EOFF,150
EREC,150
Turn-on switching energy loss
Turn-off switching energy loss
Recovery energy loss
42
6
V+=320V, ID=0.5A, L=40mH,
TC=150°C (Note 4)
10
Note 4: Characterized, not tested at manufacturing
Thermal and Mechanical Characteristics
Symbol
Description
Min
Typ
Max
Units
Conditions
High Side V-Phase Mosfet
(Note 5)
Rth(J-C)
Junction to Case Thermal Resistance
---
7.0
---
°C/W
Note 5: Characterized, not tested at manufacturing. Case temperature (TC) point shown in Figure 2.
Internal NTC – Thermistor Characteristics (IRSM505-025 Only)
Symbol
Description
Min
Typ
Max
Units
kΩ
kΩ
K
Conditions
R25
Resistance
---
47
---
TC=25°C, ±5% tolerance
TC=125°C
R125
B
Resistance
---
1.41
4050
---
---
B-constant (25-50°C)
---
---
±2% tolerance (Note 6)
Temperature Range
-40
125
°C
Note 6: See application notes for usage
4
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-025
IRSM515-025 Series
Qualification Information†
Industrial††
MSL3†††
Qualification Level
Moisture Sensitivity Level
RoHS Compliant
UL Certified
Yes
Yes – File Number
Class B
E252584
Machine Model
ESD
Human Body Model
Class 2
†
Qualification standards can be found at International Rectifier’s web site http://www.infineon.com/
††
Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information.
†††
SOP23 package only. Higher MSL ratings may be available for the specific package types listed here. Please contact
your International Rectifier sales representative for further information.
5
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-025
IRSM515-025 Series
Module Pin-Out Description
Pin
Name
Description
1
COM
Logic Ground
2
VB1
High Side Floating Supply Voltage 1
15V Supply 1
3
VCC1
HIN1
LIN1
NC
4
Logic Input for High Side Gate Driver - Phase 1
Logic Input for Low Side Gate Driver - Phase 1
Not Connected
5
6
7
VB2
High Side Floating Supply Voltage 2
15V Supply 2
8
VCC2
HIN2
LIN2
VTH
9
Logic Input for High Side Gate Driver - Phase 2
Logic Input for Low Side Gate Driver - Phase 2
Thermistor Output (IRSM505-025DA)
Not Connected (IRSM515-025DA)
High Side Floating Supply Voltage 3
15V Supply 3
10
11
NC
12
13
14
15
16
17
18
19
20
21
22
23
VB3
VCC3
HIN3
LIN3
NC
Logic Input for High Side Gate Driver - Phase 3
Logic Input for Low Side Gate Driver - Phase 3
Not Connected
V+
DC Bus Voltage Positive
U/VS1
VR1
Output - Phase 1, High Side Floating Supply Offset 1
Phase 1 Low Side Source
VR2
Phase 2 Low Side Source
V/VS2
VR3
Output - Phase 2, High Side Floating Supply Offset 2
Phase 3 Low Side Source
W/VS3
Output - Phase 3, High Side Floating Supply Offset 2
A 0123-412W
IRSM505-025PA
6
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-025
IRSM515-025 Series
Referenced Figures
V
IC
CE
IC
V
CE
H /L
90%I
IN IN
C
50%
90%IC
H /L
50%
IN IN
50%
IN /L
V
H
CE
IN
H /L
IN IN
50%
V
CE
10%IC
10%IC
tr
t
f
TON
TOFF
Figure 1a: Input to Output propagation turn-on
Figure 1b: Input to Output propagation turn-off
delay time.
delay time.
IF
VCE
HIN/LIN
Irr
trr
Figure 1c: Diode Reverse Recovery.
Figure 1: Switching Parameter Definitions
14.5mm
TC
3.8mm
Top View
Figure 2: TC measurement point for Rth(j-C)
7
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-025
IRSM515-025 Series
Application Notes
A basic application schematic is shown below.
VB2
VB1
VB3
IRSM505-025
VBUS
2M
VCC
HVICs
XTAL0
PWMUH
PWMVH
HIN1
HIN2
HIN3
LIN1
LIN2
LIN3
U, VS1
V, VS2
W, VS3
PWMWH
XTAL1
AIN2
PWMUL
PWMVL
PWMWL
SPD-REF
IRMCF171
+
-
GATEKILL
7.50k
AIN1
IFB+
IFB-
Power
Supply
3V
VDD
VTH
COM
VDDCAP
VSS
6.04k
IFBO
1nF
7.68k
4.87k
0.25
Figure 3: Basic sensor-less motor drive circuit connection. Motor is connected to U, V, W
A complete reference design board for running any permanent magnet motor via sensorless sinusoidal control is
available. The board – photo below – features the µIPM™-DIP module and the iMotion™ digital control IC.
“Reference design kits are available on www.infineon.com/ipm website”
Figure 4: Reference design board featuring the µIPM™-DIP module and the iMotion™ IRMCF171 digital control IC
8
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-025
IRSM515-025 Series
Figures 5-7 show the typical current capability for this module at specified conditions. In all tests, the application
board – the IRMCS1071-1-D reference board – was placed in a box to prevent cooling from ambient airflow.
Figure 5 is derived from using a heat sink that maintains TC at 125°C. Figures 6-7 represent current capability for
the module as used without any heat sink. ∆TJA represents the difference in temperature between the junction of
the high-side V-phase Mosfet and the ambient, measured 10cm above and 6cm away from the board. Ambient
temperature kept within 28-29°C.
1200
1000
800
600
3-Phase Modulation
2-Phase Modulation
400
200
0
6
8
10
12
14
16
18
20
Carrier Frequency (kHz)
Figure 5: Maximum sinusoidal phase current vs PWM switching frequency with a heat sink.
Space Vector Modulation, V+=320V, TA=28°C, TJ=150°C, TC=125°C
500
450
400
350
300
3-Phase Modulation
250
2-Phase modulation
200
150
100
50
0
6
8
10
12
14
16
18
20
Carrier Frequency (kHz)
Figure 6: Maximum sinusoidal phase current vs PWM switching frequency, no heat sink.
Space Vector Modulation, V+=320V, TA=28°C, TJ=128°C
9
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-025
IRSM515-025 Series
450
400
350
300
250
200
150
100
50
3-Phase Modulation
2-Phase Modulation
0
6
8
10
12
14
16
18
20
Carrier Frequency (kHz)
Figure 7: Maximum sinusoidal phase current vs PWM switching frequency, no heat sink.
Space Vector Modulation, V+=320V, TA=28°C, TJ=98°C
The module contains an NTC – connected between COM and the VTH pin – which can be used to monitor the
temperature of the module. The NTC is effectively a resistor whose value decreases as the temperature rises.
The NTC resistance can be calculated at any temperature as follows:
1
1
−
ꢀꢁꢂ = ꢀ25ꢃ�ꢄꢅ
ꢊꢋ , where ꢀ25is 47kΩ and ꢌ is 4050K
ꢆ
ꢆ
ꢈꢉ
ꢆꢇ
An external resistor network is connected to the NTC, the simplest of which is one resistor pulled up to VCC as
shown in Figure 3. The VTH vs NTC temperature, TTH curve for this configuration is shown in Figure 8 below. The
min, typical and max curves result from the NTC having a ±5% tolerance on its resistance and ±2% tolerance on
the B-parameter.
Figure 9 shows the thermistor temperature, TTH plotted against the high-side V-phase junction temperature, TJ for
a module without a heat sink. It is thus advisable to shut down the module when TTH reaches 125°C.
10
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-025
IRSM515-025 Series
14.0
12.0
10.0
8.0
min
typical
max
6.0
4.0
2.0
0.0
0
10
20
30
40
50
60
70
80
90 100 110 120 130 140
TTH (°C)
Figure 8: VTH vs TTH with VTH pin pulled up to VCC with a 7.50kΩ (1%, 100ppm) resistor.
A 15V, 1% variation in VCC is assumed.
140
120
100
80
60
40
20
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
TJ (°C)
Figure 9: TTH vs TJ for a module without a heat sink. VCC=15.3V, R=7.50kΩ
11
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January 21, 2020
IRSM505-025
IRSM515-025 Series
SOP23 Package Outline
Dimensions in mm
12
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-025
IRSM515-025 Series
DIP23A Package Outline
Dimensions in mm
13
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-025
IRSM515-025 Series
DIP23 Package Outline
Dimensions in mm
14
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-025
IRSM515-025 Series
DIP23C Package Outline
Dimensions in mm
15
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-025
IRSM515-025 Series
Top Marking
A 0123-412P
IRSM505-025PA
Marking Code
P = Pb Free; Y = Engineering Samples
Date Code
YWW format, where Y = least significant digit of the production year , WW = two digits representing
the week of the production year
Revision History:
. July 23, 2014 Corrected Figure 1 to show positive logic. Added
DIP23C package option.
. Nov 2014 Added UL certification note.
. Jan 2020 Updated the part table on page 1. OPNs are no longer
listed in the datasheet. Updated headers, footers and disclaimers on
datasheet.
16
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-025
IRSM515-025 Series
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
Edition 2019-08-09
Published by
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
Infineon Technologies AG
81726 Munich, Germany
With respect to any examples, hints or any typical
values stated herein and/or any information Please note that this product is not qualified
regarding the application of the product, Infineon according to the AEC Q100 or AEC Q101 documents
Technologies hereby disclaims any and all of the Automotive Electronics Council.
warranties and liabilities of any kind, including
© 2019 Infineon Technologies AG.
All Rights Reserved.
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Do you have a question about this
document?
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Email: erratum@infineon.com
Except as otherwise explicitly approved by Infineon
Technologies in
a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the injury.
intended application and the completeness of the
product information given in this document with
respect to such application.
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