IRU3018CW [INFINEON]

5-BIT PROGRAMMABLE SYNCHRONOUS BUCK PLUS LDO CONTROLLER AND 200mA LDO ON-BOARD; 5位可编程同步降压PLUS LDO控制器至200mA LDO ON- BOARD
IRU3018CW
型号: IRU3018CW
厂家: Infineon    Infineon
描述:

5-BIT PROGRAMMABLE SYNCHRONOUS BUCK PLUS LDO CONTROLLER AND 200mA LDO ON-BOARD
5位可编程同步降压PLUS LDO控制器至200mA LDO ON- BOARD

开关 光电二极管 控制器
文件: 总16页 (文件大小:150K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Data Sheet No. PD94144  
IRU3018  
5-BIT PROGRAMMABLE SYNCHRONOUS BUCK PLUS  
LDO CONTROLLER AND 200mA LDO ON-BOARD  
FEATURES  
DESCRIPTION  
Provides single chip solution for Vcore, GTL+ & clock The IRU3018 controller IC is specifically designed to meet  
supply  
Intel specification for Pentium II microprocessor appli-  
cations as well as the next generation of P6 family pro-  
200mA On-Board LDO Regulator  
Designed to meet the latest Intel specification for cessors. The IRU3018 provides a single chip controller  
Pentium II  
On-Board DAC programs the output voltage from 200mA regulator for clock supply which are required for  
1.3V to 3.5V the Pentium II applications. These devices feature a pat-  
IC for the Vcore, LDO controller for GTL+ and an internal  
Linear regulator controller on board for 1.5V GTL+ ented topology that in combination with a few external  
supply  
components as shown in the typical application circuit,  
will provide in excess of 18A of output current for an on-  
Loss-less Short Circuit Protection with HICCUP  
Synchronous operation allows maximum efficiency board DC-DC converter while automatically providing the  
patented architecture allows fixed frequency opera- right output voltage via the 5-bit internal DAC. The  
tion as well as 100% duty cycle during dynamic IRU3018 also features loss-less current sensing for both  
load  
switchers by using the RDS(on) of the high-side power  
MOSFET as the sensing resistor, internal current limit-  
Soft-Start  
High current totem pole driver for direct driving of the ing for the clock supply, and a Power Good window com-  
external power MOSFET  
parator that switches its open collector output low when  
any one of the outputs is outside of a pre-programmed  
Power Good Function monitors all outputs  
Over-Voltage Protection circuitry protects the window. Other features of the device are: Under-voltage  
switcher output and generates a fault signal  
Thermal Shutdown  
lockout for both 5V and 12V supplies, an external pro-  
grammable soft-start function, programming the oscilla-  
tor frequency via an external resistor, Over-Voltage Pro-  
tection (OVP) circuitry for both switcher outputs and an  
internal thermal shutdown.  
Logic Level Enable Input  
APPLICATIONS  
Total Power Solution for Pentium II processor  
application  
TYPICAL APPLICATION  
Note: Pentium II is trademark of Intel Corp  
5V  
IRU3018  
SWITCHER1  
Vout1  
Vout2  
CONTROL  
3.3V  
LINEAR  
LINEAR  
CONTROL  
REGULATOR  
Vout3  
3018app3-1.1  
Figure 1 - Typical application of IRU3018.  
PACKAGE ORDER INFORMATION  
TA (C)  
DEVICE  
PACKAGE  
0 To 70  
IRU3018CW  
24-pin Plastic SOIC WB  
Rev. 1.5  
07/24/01  
1
IRU3018  
ABSOLUTE MAXIMUM RATINGS  
V5 Supply Voltage .................................................... 7V  
V12 Supply Voltage .................................................. 20V  
Storage Temperature Range ...................................... -65°C To 150°C  
Operating Junction Temperature Range ..................... 0°C To 125°C  
PACKAGE INFORMATION  
24-PIN WIDE BODY PLASTIC SOIC (W)  
TOP VIEW  
1
2
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
V12  
VID4  
VID3  
VID2  
VID1  
VID0  
PGood  
V5  
UGate1  
Phase1  
LGate1  
PGnd  
OCSet1  
Vsen1  
Fb1  
En  
Fb3  
Gate3  
Gnd  
Vout2  
3
4
5
6
7
8
9
SS  
Fault / Rt  
Fb2  
10  
11  
12  
Vin2  
θJA =80C/W  
ELECTRICAL SPECIFICATIONS  
Unless otherwise specified, these specifications apply over V12=12V, V5=5V and TA=0 to 70°C. Typical values refer  
to TA=25°C. Low duty cycle pulse testing is used which keeps junction and case temperatures equal to the ambient  
temperature.  
PARAMETER  
SYM  
TEST CONDITION  
Supply Ramping Up  
Supply Ramping Up  
MIN  
TYP  
MAX  
UNITS  
Supply UVLO Section  
UVLO Threshold-12V  
UVLO Hysteresis-12V  
UVLO Threshold-5V  
UVLO Hysteresis-5V  
Supply Current  
10  
V
V
V
V
0.4  
4.3  
0.3  
Operating Supply Current  
I12  
I5  
V12  
V5  
6
20  
mA  
Switching Controller, Vcore (Vout 1)  
VID Section  
DAC Output Voltage (Note 1) VDAC  
DAC Output Line Regulation  
DAC Output Temp Variation  
VID Input LO  
0.99Vs  
2
Vs  
0.1  
0.5  
1.01Vs  
0.8  
V
%
%
V
VID Input HI  
V
VID Input Internal Pull-Up  
Resistor to V5  
27  
KΩ  
Error Comparator Section  
Input Bias Current  
2
+2  
µA  
mV  
ns  
Input Offset Voltage  
-2  
Delay to Output  
Vdiff=10mV  
100  
Oscillator Section (Internal)  
Osc Frequency  
200  
KHz  
Rev. 1.5  
07/24/01  
2
IRU3018  
PARAMETER  
SYM  
TEST CONDITION  
MIN  
TYP  
200  
10  
MAX  
UNITS  
Current Limit Section  
CS Threshold Set Current  
CS Comp Offset Voltage  
Hiccup Duty Cycle  
µA  
mV  
%
-5  
+5  
Css=0.1µF  
Output Drivers Section  
Rise Time  
CL=3000pF  
CL=3000pF  
70  
70  
ns  
ns  
Fall Time  
Dead Band Time Between  
High Side and Synch Drive  
Vcore Switcher Only  
2.5V Regulator (Vout 2)  
Reference Voltage  
CL=3000pF  
200  
ns  
Vo2  
Vo3  
TA=25C, Vout2=Fb2  
1.260  
1.260  
0.6  
V
V
Reference Voltage  
Dropout Voltage  
Io=200mA  
V
Load Regulation  
1mA< Io <200mA  
3.1V<Vin2<4V, Vo=2.5V  
0.5  
%
Line Regulation  
0.2  
%
Input Bias Current  
2
µA  
mA  
mA  
C  
Output Current  
200  
300  
Current Limit  
Thermal Shutdown  
145  
1.5V Regulator (Vout 3)  
Reference Voltage  
TA=25C, Gate3=Fb3  
1.260  
1.260  
V
V
Reference Voltage  
Input Bias Current  
2
µA  
mA  
Output Drive Current  
Power Good Section  
Core UV Lower Trip Point  
Core UV Upper Trip Point  
Core UV Hysterises  
Core OV Upper Trip Point  
Core OV Lower Trip Point  
Core OV Hysterises  
Fb2 Lower Trip Point  
Fb2 Upper Trip Point  
Fb3 Lower Trip Point  
Fb3 Upper Trip Point  
Power Good Output LO  
Power Good Output HI  
Fault (Overvoltage) Section  
Core OV Upper Trip Point  
Core OV Lower Trip Point  
Vin2 Upper Trip Point  
Vin2 Lower Trip Point  
Fault Output HI  
50  
Vsen1 Ramping Down  
Vsen1 Ramping Up  
0.90Vs  
0.92Vs  
0.02Vs  
1.10Vs  
1.08Vs  
0.02Vs  
0.95  
V
V
V
V
V
V
V
V
V
V
V
V
Vsen1 Ramping Up  
Vsen1 Ramping Down  
Fb2 Ramping Down  
Fb2 Ramping Up  
Fb3 Ramping Down  
Fb3 Ramping Up  
RL=3mA  
1.05  
0.95  
1.05  
0.4  
RL=5K, Pull-Up to 5V  
4.8  
Vsen1 Ramping Up  
Vsen1 Ramping Down  
Vin2 Ramping Up  
Vin2 Ramping Down  
Io=3mA  
1.17Vs  
1.15Vs  
4.3  
V
V
V
V
V
4.2  
10  
Soft-Start Section  
Pull-Up Resistor to 5V  
Enable Section  
OCSet=0V, Phase=5V  
23  
KΩ  
En Pin Input LO Voltage  
En Pin Input HI Voltage  
En Pin Input LO Current  
En Pin Input HI Current  
Venl  
Regulator OFF  
Regulator ON  
Ven=0V to 0.8V  
Ven=2V to 5V  
0.8  
V
Venh  
2
V
0.01  
20  
µA  
µA  
Note 1: Vs refers to the set point voltage given in Table 1  
Rev. 1.5  
07/24/01  
3
IRU3018  
D4  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
D3  
D2  
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
D1  
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
D0  
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
Vs  
D4  
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
D3  
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
D2  
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
D1  
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
D0  
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
Vs  
2.0  
2.1  
2.2  
2.3  
2.4  
2.5  
2.6  
2.7  
2.8  
2.9  
3.0  
3.1  
3.2  
3.3  
3.4  
3.5  
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1.30  
1.35  
1.40  
1.45  
1.50  
1.55  
1.60  
1.65  
1.70  
1.75  
1.80  
1.85  
1.90  
1.95  
2.00  
2.05  
Table 1 - Set point voltage vs. VID codes  
PIN DESCRIPTIONS  
PIN# PIN SYMBOL PIN DESCRIPTION  
1
V12  
This pin is connected to the 12 V supply and serves as the power Vcc pin for the output  
drivers. A high frequency capacitor (typically 1µF) must be placed close to this pin and  
PGnd pin and be connected directly from this pin to the ground plane for the noise free  
operation.  
2
Vid4  
This pin selects a range of output voltages for the DAC. When in the LOW state the range  
is 1.3V to 2.05V and when it switches to HI state the range is 2.0V to 3.5V. This pin is TTL  
compatible that realizes a logic “1” as either HI or Open. When left open, this pin is pulled  
up internally by a 27Kresistor to 5V supply.  
3
4
5
6
7
Vid3  
Vid2  
MSB input to the DAC that programs the output voltage. This pin is TTL compatible that  
realizes a logic “1” as either HI or Open. When left open, this pin is pulled up internally by  
a 27Kresistor to 5V supply.  
Input to the DAC that programs the output voltage. This pin is TTL compatible that realizes  
a logic “1” as either HI or Open. When left open, this pin is pulled up internally by a 27KΩ  
resistor to 5V supply.  
Vid1  
Input to the DAC that programs the output voltage. This pin is TTL compatible that realizes  
a logic “1” as either HI or Open. When left open, this pin is pulled up internally by a 27KΩ  
resistor to 5V supply.  
Vid0  
LSB input to the DAC that programs the output voltage. This pin is TTL compatible that  
realizes a logic “1” as either HI or Open. When left open, this pin is pulled up internally by  
a 27Kresistor to 5V supply.  
PGood  
This pin is an open collector output that switches LO when any of the outputs are outside  
of the specified under voltage trip point. It also switches low when Vsen1 pin is more than  
10% above the DAC voltage setting.  
8
9
V5  
5V supply voltage. A high frequency capacitor (0.1 to 1µF) must be placed close to this  
pin and connected from this pin to the ground plane for noise free operation.  
This pin provides the soft start for the switching regulator. An internal resistor charges an  
external capacitor that is connected from 5V supply to this pin which ramps up the out-  
puts of the switching regulators, preventing the outputs from overshooting as well as  
limiting the input current. The second function of the Soft Start cap is to provide long off  
time (HICCUP) for the synchronous MOSFET during current limiting.  
SS  
Rev. 1.5  
07/24/01  
4
IRU3018  
PIN# PIN SYMBOL PIN DESCRIPTION  
10  
Fault / Rt  
This pin has dual function. It acts as an output of the OVP circuitry or it can be used to  
program the frequency using an external resistor. When used as a fault detector, if the  
switcher output exceed the OVP trip point, the Fault pin switches to 12V and the soft-  
start cap is discharged. If the Fault pin is to be connected to any external circuitry, it  
needs to be buffered as shown in the application circuit.  
11  
12  
Fb2  
This pin provides the feedback for the internal LDO regulator which its output is Vout4.  
This pin is the input that provides power for the internal LDO regulator. It is also monitored  
for the under-voltage and over-voltage conditions.  
Vin2  
13  
14  
15  
16  
17  
Vout2  
Gnd  
Gate3  
Fb3  
This pin is the output of the internal LDO regulator.  
This pin serves as the ground pin and must be connected directly to the ground plane.  
This pin controls the gate of an external transistor for the 1.5V GTL+ linear regulator.  
This pin provides the feedback for the linear regulator which its output drive is Gate3.  
This pin is a TTL compatible Enable pin. When this pin is left open or pulled high, the  
device is enabled and when it is pulled low, it will disable the switcher and the LDO  
controller (Vout3) leaving the internal 200mA regulator operational. When signal is given to  
enable the device, both switcher and Vout3 will go through soft-start, the same as during  
start-up.  
En  
18  
Fb1  
This pin provides the feedback for the synchronous switching regulator. Typically this pin  
can be connected directly to the output of the switching regulator. However, a resistor  
divider is recommended to be connected from this pin to Vout1 and Gnd to adjust the  
output voltage for any drop in the output voltage that is caused by the trace resistance.  
The value of the resistor connected from Vout1 to Fb1 must be less than 100.  
This pin is internally connected to the Under-voltage and over-voltage comparators sens-  
ing the Vcore status. It must be connected directly to the Vcore supply.  
This pin is connected to the Drain of the power MOSFET of the Core supply and it provides  
the positive sensing for the internal current sensing circuitry. An external resistor pro-  
grams the CS threshold depending on the RDS of the power MOSFET. An external capaci-  
tor is placed in parallel with the programming resistor to provide high frequency noise  
filtering.  
19  
20  
Vsen1  
OCSet1  
21  
PGnd  
This pin serves as the Power ground pin and must be connected directly to the ground  
plane close to the source of the synchronous MOSFET. A high frequency capacitor (typi-  
cally 1µF) must be connected from V12 pin to this pin for noise free operation.  
Output driver for the synchronous power MOSFET for the Core supply.  
22  
23  
LGate1  
Phase1  
This pin is connected to the Source of the power MOSFET for the Core supply and it  
provides the negative sensing for the internal current sensing circuitry.  
24  
UGate1  
Output driver for the high side power MOSFET for the Core supply.  
Rev. 1.5  
07/24/01  
5
IRU3018  
BLOCK DIAGRAM  
4.3V  
18  
24  
Fb1  
17  
1
Enable  
V12  
V12  
En  
V12  
V5  
Over  
Vset  
Enable  
UGate1  
Voltage  
UVLO  
1.17Vset  
2.5V  
PWM  
8
+
Control  
Vset  
22  
Slope  
Comp  
LGate1  
6
5
4
3
2
VID0  
VID1  
VID2  
VID3  
VID4  
Osc  
23  
20  
Phase1  
OCSet1  
5Bit  
Over  
Current  
Soft  
Start &  
Fault  
DAC  
1.1Vset  
Enable  
200uA  
Logic  
19  
16  
15  
12  
Vsen1  
Fb3  
10  
9
Fault / Rt  
SS  
0.9Vset  
0.9V  
V12  
V5  
Gate3  
Vin2  
21  
14  
1.26V  
PGnd  
Gnd  
13  
11  
7
Vout2  
Fb2  
PGood  
Figure 2 - Simplified block diagram of the IRU3018.  
Rev. 1.5  
07/24/01  
6
IRU3018  
TYPICAL APPLICATION  
R22  
12V  
L1  
C8  
R12  
C10  
R13  
C14  
5V  
C2  
C3  
1
20  
V12  
OCSet1  
Q3  
Q4  
UGate1 24  
L3  
8 V5  
Phase1 23  
LGate1 22  
Vout1  
1.8V - 3.5V  
C16  
R14  
C19  
C13  
R15  
R16  
R21  
10 Fault/Rt  
12 Vin2  
PGnd 21  
Vsen1 19  
Fb1 18  
R17  
C15  
R19  
3.3V  
En 17  
U1  
C1  
IRU3018  
PGood 7  
PGood  
Q2  
15 Gate3  
16 Fb3  
R5  
Vout3  
1.5V  
VID0 6  
VID1 5  
VID2 4  
VID3 3  
VID4 2  
C17  
C18  
R6  
Vout4  
2.5V  
13 Vout2  
Fb2  
11  
Gnd  
14  
SS  
9
R7  
R8  
3018app1-1.6  
5V  
C9  
Figure 3 - Typical application of IRU3018 for an on board DC-DC converter providing power for the Vcore, GTL+ &  
Clock supply for the Deschutes and the next generation processor applications.  
Rev. 1.5  
7
07/24/01  
IRU3018  
IRU3018 APPLICATION PARTS LIST  
Ref Desig Description  
Qty  
1
Part #  
Manuf  
Q2  
Q3  
Q4  
L1  
MOSFET  
MOSFET  
MOSFET with Schottky  
Inductor  
IRLR024, TO-252 package  
IRL3103S, TO-263 package  
IRL3103D1S, TO-263 package  
L=1µH, 5052 core with 4 turns of  
1.0mm wire  
IR  
1
1
1
IR  
IR  
Micro Metal  
L3  
Inductor  
1
L=2.7µH, 5052B core with 7 turns  
of 1.2mm wire  
Micro Metal  
C1,17  
C2  
C3  
Capacitor, Electrolytic  
Capacitor, Electrolytic  
Capacitor, Electrolytic  
Capacitor, Ceramic  
2
1
1
1
3
1
1
2
6
1
1
3
1
3
3
1
6MV1000GX, 1000µF, 6.3V  
10MV470GX, 470µF, 10V  
10MV1200GX, 1200µF, 10V  
1µF, 0805  
1µF, 0603  
220pF, 0603  
Sanyo  
Sanyo  
Sanyo  
C8  
C9,15,19 Capacitor, Ceramic  
C10  
C13  
C14  
C16  
C18  
R5  
Capacitor, Ceramic  
Capacitor, Ceramic  
Capacitor, Electrolytic  
Capacitor, Electrolytic  
Capacitor, Electrolytic  
Resistor  
1000pF, 0603  
10MV1200GX, 1200µF, 10V  
6MV1500GX, 1500µF, 6.3V  
6MV150GX, 150µF, 6.3V  
19.1, 1%, 0603  
100, 1%, 0603  
3.3K, 5%, 0603  
4.7, 5%, 1206  
2.2K, 1%, 0603  
10, 5%, 0603  
Sanyo  
Sanyo  
Sanyo  
R6,7,8  
R12  
R13,14,15 Resistor  
R16,17,21 Resistor  
Resistor  
Resistor  
R22  
Resistor  
Rev. 1.5  
07/24/01  
8
IRU3018  
TYPICAL APPLICATION  
(Dual Layout with HIP6018)  
R22  
12V  
L1  
C8  
R12  
C10  
R13  
C14  
5V  
C2  
C3  
1
20  
V12  
OCSet1  
R11  
Q3  
Q4  
UGate1 24  
L3  
8 V5  
(Fault)  
Phase1 23  
LGate1 22  
Vout1  
1.8V - 3.5V  
C16  
R14  
C19  
C13  
R15  
R16  
R21  
10 Fault/Rt  
(Rt)  
PGnd 21  
Vsen1 19  
Fb1 18  
U1  
R17  
C15  
R19  
C12  
IRU3018  
3.3V  
12 Vin2  
En 17  
(Comp1)  
C1  
C11  
R18  
PGood 7  
PGood  
Q2  
15 Gate3  
16 Fb3  
R5  
Vout3  
1.5V  
VID0 6  
VID1 5  
VID2 4  
VID3 3  
VID4 2  
C17  
C18  
R6  
Vout4  
2.5V  
13 Vout2  
Fb2  
11  
Gnd  
14  
SS  
9
R7  
R8  
3018app2-1.6  
5V  
C20  
C9  
Figure 4 - Typical application of IRU3018 in a dual layout with HIP6018 for an on-board DC-DC converter providing  
power for the Vcore, GTL+ & Clock supply for the Deschutes and the next generation processor applications.  
Part #  
R11 R18  
C9  
C11  
C12  
C19  
C20  
HIP6018  
O
S
V
O
V
V
O
V
IRU3018  
O
V
O
O
V
O
S - Short O - Open V - See IR or Harris parts list for the value  
Table 2 - Dual layout component table. Components that need to be modified to make  
the dual layout work for IRU3018 and HIP6018.  
Rev. 1.5  
07/24/01  
9
IRU3018  
IRU3018 APPLICATION PARTS LIST  
Dual Layout with HIP6018  
Ref Desig Description  
Qty  
1
1
1
1
Part #  
IRLR024, TO-252 package  
IRL3103S, TO-263 package  
IRL3103D1S, TO-263 package  
L=1µH, 5052 core with 4 turns of  
1.0mm wire  
Manuf  
Q2  
Q3  
Q4  
L1  
MOSFET  
IR  
MOSFET  
MOSFET with Schottky  
Inductor  
IR  
IR  
Micro Metal  
L3  
Inductor  
1
L=2.7µH, 5052B core with 7 turns of  
1.2mm wire  
Micro Metal  
C1,17  
C2  
C3  
Capacitor, Electrolytic  
Capacitor, Electrolytic  
Capacitor, Electrolytic  
Capacitor, Ceramic  
2
1
1
1
3
1
3
6MV1000GX, 1000uF, 6.3V  
10MV470GX, 470µF, 10V  
10MV1200GX, 1200µF, 10V  
1µF, 0805  
1µF, 0603  
220pF, 0603  
Sanyo  
Sanyo  
Sanyo  
C8  
C9,15,19 Capacitor, Ceramic  
C10 Capacitor, Ceramic  
C11,12,20 Capacitor, Ceramic  
See Table 2, dual layout component  
0603 × 3  
C13  
C14  
C16  
C18  
R5  
R6,7,8  
R11  
R12  
Capacitor, Ceramic  
Capacitor, Electrolytic  
Capacitor, Electrolytic  
Capacitor, Electrolytic  
Resistor  
Resistor  
Resistor  
Resistor  
1
2
6
1
1
3
1
1
3
3
1
1000pF, 0603  
10MV1200GX, 1200µF, 10V  
6MV1500GX, 1500µF, 6.3V  
6MV150GX, 150µF, 6.3V  
19.1, 1%, 0603  
100, 1%, 0603  
0, 0603  
3.3k, 5%, 0603  
4.7, 5%, 1206  
2.2k, 1%, 0603  
See Table 2, dual layout component  
0603 × 1  
Sanyo  
Sanyo  
Sanyo  
R13,14,15 Resistor  
R16,17,21 Resistor  
R18  
Resistor  
R19  
R22  
Resistor  
Resistor  
1
1
220k, 1%, 0603  
10, 5%, 0603  
Rev. 1.5  
07/24/01  
10  
IRU3018  
APPLICATION INFORMATION  
ing during the load transient eases the requirement for  
the output capacitor ESR at the cost of load regulation.  
One can show that the new ESR requirement eases up  
by half the total trace resistance. For example, if the  
ESR requirement of the output capacitors without volt-  
age level shifting must be 7mthen after level shifting  
the new ESR will only need to be 8.5mif the trace  
resistance is 5m(7+5/2=9.5). However, one must be  
careful that the combined “voltage level shifting” and the  
transient response is still within the maximum tolerance  
of the Intel specification. To insure this, the maximum  
trace resistance must be less than:  
An example of how to calculate the components for the  
application circuit is given below.  
Assuming, two set of output conditions that this regula-  
tor must meet for Vcore:  
a) Vo=2.8V, Io=14.2A, Vo=185mV, Io=14.2A  
b) Vo=2V, Io=14.2A, Vo=140mV, Io=14.2A  
The regulator design will be done such that it meets the  
worst case requirement of each condition.  
Output Capacitor Selection  
The first step is to select the output capacitor. This is  
done primarily by selecting the maximum ESR value  
that meets the transient voltage budget of the total Vo  
specification. Assuming that the regulators DC initial  
accuracy plus the output ripple is 2% of the output volt-  
age, then the maximum ESR of the output capacitor is  
calculated as:  
Rs 2 × (Vspec - 0.02 × Vo - Vo) / I  
Where:  
Rs = Total maximum trace resistance allowed  
Vspec = Intel total voltage spec  
Vo = Output voltage  
Vo = Output ripple voltage  
I = load current step  
100  
ESR ≤  
= 7mΩ  
14.2  
For example, assuming:  
Vspec = ±140mV = ±0.1V for 2V output  
Vo = 2V  
The Sanyo MVGX series is a good choice to achieve  
both the price and performance goals. The 6MV1500GX,  
1500µF, 6.3V has an ESR of less than 36mtypical.  
Selecting 6 of these capacitors in parallel has an ESR  
of 6mwhich achieves our low ESR goal.  
Vo = assume 10mV = 0.01V  
I = 14.2A  
Then the Rs is calculated to be:  
Other type of Electrolytic capacitors from other manu-  
facturers to consider are the Panasonic FA series or the  
Nichicon PL series.  
Rs 2 ×(0.140 - 0.02 × 2 - 0.01) / 14.2 = 12.6mΩ  
However, if a resistor of this value is used, the maximum  
power dissipated in the trace (or if an external resistor is  
Reducing the Output Capacitors Using Voltage Level being used) must also be considered. For example if  
Shifting Technique  
Rs=12.6m, the power dissipated is:  
Io2 × Rs = 14.22 × 12.6 = 2.54W  
The trace resistance or an external resistor from the output  
of the switching regulator to the Slot 1 can be used to  
the circuit advantage and possibly reduce the number of This is a lot of power to be dissipated in a system. So, if  
output capacitors, by level shifting the DC regulation point the Rs=5m, then the power dissipated is about 1W  
when transitioning from light load to full load and vice which is much more acceptable. If level shifting is not  
versa. To accomplish this, the output of the regulator is implemented, then the maximum output capacitor ESR  
typically set about half the DC drop that results from was shown previously to be 7mwhich translated to 6  
light load to full load. For example, if the total resistance of the 1500µF, 6MV1500GX type Sanyo capacitors. With  
from the output capacitors to the Slot 1 and back to the Rs=5m, the maximum ESR becomes 9.5mwhich is  
Gnd pin of the IRU3018 is 5mand if the total I, the equivalent to 4 caps. Another important consideration  
change from light load to full load is 14A, then the output is that if a trace is being used to implement the resistor,  
voltage measured at the top of the resistor divider which the power dissipated by the trace increases the case  
is also connected to the output capacitors in this case, temperature of the output capacitors which could seri-  
must be set at half of the 70mV or 35mV higher than the ously effect the life time of the output capacitors.  
DAC voltage setting. This intentional voltage level shift-  
Rev. 1.5  
11  
07/24/01  
IRU3018  
Output Inductor Selection  
In our example for Vo=2.8V and 14.2 A load, assuming  
The output inductance must be selected such that un- IRL3103 MOSFET for both switches with maximum on  
der low line and the maximum output voltage condition, resistance of 19m, we have:  
the inductor current slope times the output capacitor  
T = 1 / 200000 = 5µs  
ESR is ramping up faster than the capacitor voltage is  
Vsw = Vsync = 14.2 × 0.019 = 0.27V  
drooping during a load current step.  
D (2.8 + 0.27) / (5 - 0.27 + 0.27) = 0.61  
Ton = 0.61 × 5 = 3.1µs  
However, if the inductor is too small, the output ripple  
current and ripple voltage become too large. One solu-  
tion to bring the ripple current down is to increase the  
switching frequency, however that will be at the cost of  
reduced efficiency and higher system cost. The follow-  
Toff = 5 - 3.1 = 1.9µs  
Ir = (2.8 + 0.27) × 1.9 / 3 = 1.94A  
Vo = 1.94 × 0.006 = 0.011V = 11mV  
ing set of formulas are derived to achieve the optimum Power Component Selection  
performance without many design iterations. Assuming IRL3103 MOSFETs as power components,  
we will calculate the maximum power dissipation as fol-  
The maximum output inductance is calculated using the lows:  
following equation:  
For high-side switch the maximum power dissipation  
L = ESR×C×[Vin(min) - Vo(max)] / ( 2×∆I )  
happens at maximum Vo and maximum duty cycle.  
Where :  
Dmax (2.8 + 0.27) / (4.75 - 0.27 + 0.27) = 0.65  
PDH = Dmax × Io2 × RDS(max)  
Vin(min) = Minimum input voltage  
For Vo=2.8V, I=14.2A  
PDH = 0.65 × 14.22 × 0.029 = 3.8W  
L = 0.006×9000×(4.75 - 2.8) / (2×14.2) = 3.7µH  
RDS(max) = Maximum RDS(on) of the MOSFET at 125C  
Assuming that the programmed switching frequency is  
set at 200KHz, an inductor is designed using the For synch MOSFET, maximum power dissipation hap-  
Micrometals’ Powder Iron core material. The summary pens at minimum Vo and minimum duty cycle.  
of the design is outlined below:  
Dmin (2 + 0.27) / (5.25 - 0.27 + 0.27) = 0.43  
PDS = (1-Dmin) × Io2 × RDS(max)  
The selected core material is Powder Iron, the selected  
PDS = (1 - 0.43) × 14.22 × 0.029 = 3.33 W  
core is T50-52D from Micro Metal wound with 8 turns of  
#16 AWG wire, resulting in 3µH inductance with 3mHeat Sink Selection  
of DC resistance.  
Selection of the heat sink is based on the maximum  
allowable junction temperature of the MOSFETS. Since  
Assuming L=3µH and Fsw=200KHz (switching fre- we previously selected the maximum RDS(on) at 125C,  
quency), the inductor ripple current and the output ripple then we must keep the junction below this temperature.  
voltage is calculated using the following set of equations: Selecting TO-220 package gives θJC=1.8C/W (from the  
venders’ data sheet) and assuming that the selected  
T Switching Period  
heat sink is black anodized, the heat-sink-to-case ther-  
D Duty Cycle  
mal resistance is: θcs=0.05C/W, the maximum heat  
Vsw High-side MOSFET ON Voltage  
sink temperature is then calculated as:  
RDS MOSFET On-resistance  
Ts = TJ - PD × (θJC + θcs)  
Ts = 125 - 3.82 × (1.8 + 0.05) = 118C  
With the maximum heat sink temperature calculated in  
the previous step, the heat-sink-to-air thermal resistance  
(θSA) is calculated as follows:  
Vsync Synchronous MOSFET ON Voltage  
Ir Inductor Ripple Current  
Vo Output Ripple Voltage  
T = 1 / Fsw  
Vsw = Vsync = Io × RDS  
D (Vo + Vsync) / (Vin - Vsw + Vsync)  
Ton = D × T  
Toff = T - Ton  
Ir = (Vo + Vsync) × Toff / L  
Vo = Ir × ESR  
Assuming TA = 35C:  
T = Ts - TA = 118 - 35 = 83C  
Temperature Rise Above Ambient  
θSA = T / PD = 83 / 3.82 = 22C/W  
Rev. 1.5  
07/24/01  
12  
IRU3018  
Next, a heat sink with lower θSA than the one calculated Note that since the MOSFETs RDS(on) increases with tem-  
in the previous step must be selected. One way to do perature, this number must be divided by 1.5, in order  
this is to look at the graphs of the “Heat Sink Temp Rise to find the RDS(on) max at room temperature. The Motorola  
Above the Ambient” vs. the “Power Dissipation” given in MTP3055VL has a maximum of 0.18RDS(on) at room  
the heat sink manufacturers’ catalog and select a heat temperature, which meets our requirement.  
sink that results in lower temperature rise than the one  
calculated in previous step. The following heat sinks from To select the heat sink for the LDO MOSFET, first cal-  
AAVID and Thermalloy meet this criteria.  
culate the maximum power dissipation of the device  
and then follow the same procedure as for the switcher.  
Co.  
Part #  
PD = (Vin - Vo) × IL  
Thermalloy............................6078B  
AAVID..................................577002  
Where:  
PD = Power Dissipation of the Linear Regulator  
IL = Linear Regulator Load Current  
Following the same procedure for the Schottky diode  
results in a heat sink with θSA=25C/W. Although it is  
possible to select a slightly smaller heat sink, for sim- For the 1.5V and 2A load:  
plicity the same heat sink as the one for the high side  
PD = (3.3 - 1.5) × 2 = 3.6W  
MOSFET is also selected for the synchronous MOSFET.  
Assuming TJ(max) = 125C:  
Switcher Current Limit Protection  
Ts = TJ - PD × (θJC + θcs)  
Ts = 125 - 3.6 × (1.8 + 0.05) = 118C  
The IRU3018 uses the MOSFET RDS(on) as the sensing  
resistor to sense the MOSFET current and compares to  
a programmed voltage which is set externally via a re- With the maximum heat sink temperature calculated in  
sistor (Rcs) placed between the drain of the MOSFET the previous step, the heat-sink-to-air thermal resistance  
and the “OCSet1” terminal of the IC as shown in the (θSA) is calculated as follows:  
application circuit. For example, if the desired current  
limit point is set to be 22A, for the synchronous and 16A Assuming TA = 35°C:  
for the non-synchronous, and from our previous selec-  
tion, the maximum MOSFET RDS(on)=19m, then the cur-  
rent sense resistor Rcs is calculated as:  
T = Ts - Ta = 118 - 35 = 83 °C  
Temperature Rise Above Ambient  
θSA = T / PD = 83 / 3.6 = 23C/W  
Vcs = ICL × RDS = 22 × 0.019 = 0.418V  
The same heat sink as the one selected for the switcher  
MOSFETs is also suitable for the 1.5V regulator.  
Rcs = Vcs / IB = (0.418V) / (200µA) = 2.1KΩ  
Where:  
IB = 200µA is the internal current setting of the 2.5V, Clock Supply  
IRU3018  
The IRU3018 provides an internal ultra low dropout regu-  
lator with a minimum of 200mA current capability that  
converts 3.3V supply to a programmable regulated 2.5V  
Switcher Frequency Selection  
The IRU3018 frequency is internally set at 200KHz with supply to power the clock chip. The internal regulator  
no external timing resistor. However, it can be adjusted has short circuit protection with internal thermal shut-  
up by using an external resistor from Rt pin to Gnd or down.  
can be adjusted down if the resistor is connected to the  
12V supply.  
1.5V and 2.5V Supply Resistor Divider Selection  
Since the internal voltage reference for the linear regula-  
1.5V, GTL+ Supply LDO Power MOSFET Selection tors is set at 1.26V for IRU3018, there is a need to use  
The first step in selecting the power MOSFET for the external resistor dividers to step up the voltage. The re-  
1.5V linear regulator is to select its maximum RDS(on) of sistor dividers are selected using the following equations:  
the pass transistor based on the input to output Dropout  
Vo = (1 + Rt/RB) × Vref  
voltage and the maximum load current.  
Where:  
RDS(max) = (Vin - Vo) / IL  
For Vo = 1.5V, Vin = 3.3V and, IL = 2A  
RDS(max) = (3.3 - 1.5) / 2 = 0.9Ω  
Rt = Top resistor divider  
RB = Bottom resistor divider  
Vref = 1.26V typical  
Rev. 1.5  
07/24/01  
13  
IRU3018  
For 1.5V supply  
cap thereby limiting the input current. For example, with  
1µF of soft-start capacitor, the ramp up rate is approxi-  
mated to be 1V/20ms. For example if the output capaci-  
tance is 9000µF, the maximum start up current will be:  
Assuming RB=100:  
Rt = RB × [(Vo/Vref) - 1]  
Rt = 100 × [(1.5/1.26) - 1] = 19.1Ω  
I = 9000µF × (1V/20ms) = 0.45A  
For 2.5V supply  
Assuming RB=200:  
The other function of the soft-start cap is to provide an  
off time between the current limit cycles(HICCUP) in or-  
der for the synchronous MOSFET to cool off and survive  
the short circuit condition. The off time between the cur-  
rent limit cycles is approximated as:  
Rt = RB × [(Vo/Vref) - 1]  
Rt = 200 × [(2.5/1.26) - 1] = 197Ω  
Select Rt=200Ω  
THICCUP = 60×Css  
(ms)  
Switcher Output Voltage Adjust  
For example if Css=1µF, THICCUP = 60×1 = 60ms  
As it was discussed earlier, the trace resistance from  
the output of the switching regulator to the Slot 1 can be Input Filter  
used to the circuit advantage and possibly reduce the It is recommended to place an inductor between the  
number of output capacitors, by level shifting the DC system 5V supply and the input capacitors of the switch-  
regulation point when transitioning from light load to full ing regulator to isolate the 5V supply from the switching  
load and vice versa. To account for the DC drop, the noise that occurs during the turn on and off of the switch-  
output of the regulator is typically set about half the DC ing components. Typically an inductor in the range of 1  
drop that results from light load to full load. For example, to 3µH will be sufficient in this type of application.  
if the total resistance from the output capacitors to the  
Slot 1 and back to the Gnd pin of the IRU3018 is 5mExternal Shutdown  
and if the total I, the change from light load to full load The best way to shutdown the IRU3018 is to pull down  
is 14A, then the output voltage measured at the top of on the soft-start pin using an external small signal tran-  
the resistor divider which is also connected to the out- sistor such as 2N3904 or 2N7002 small signal MOSFET.  
put capacitors in this case, must be set at half of the This allows slow ramp up of the output, the same as the  
70mV or 35mV higher than the DAC voltage setting. To power up.  
do this, the top resistor of the resistor divider (R17 in the  
application circuit) is set at 100, and the R19 is calcu- Layout Considerations  
lated. For example, if DAC voltage setting is for 2.8V Switching regulators require careful attention to the lay-  
and the desired output under light load is 2.835V, then out of the components, specifically power components  
R19 is calculated using the following formula:  
since they switch large currents. These switching com-  
ponents can create large amount of voltage spikes and  
high frequency harmonics if some of the critical compo-  
nents are far away from each other and are connected  
with inductive traces. The following is a guideline of how  
to place the critical components and the connections  
R19 = 100×[VDAC/(Vo - 1.004×VDAC)] ()  
R19 = 100×[2.8/(2.835 - 1.004×2.800)] = 11.76KΩ  
Select 11.8K, 1%  
Note: The value of the top resistor must not exceed 100. between them in order to minimize the above issues.  
The bottom resistor can then be adjusted to raise the  
output voltage.  
Start the layout by first placing the power components:  
Soft-Start Capacitor Selection  
1) Place the input capacitor C14 and the high-side  
MOSFET, Q3 as close to each other as possible.  
The soft-start capacitor must be selected such that dur-  
ing the start-up when the output capacitors are charging  
up, the peak inductor current does not reach the current 2) Place the synchronous MOSFET, Q4 and the Q3 as  
limit threshold. A minimum of 1µF capacitor insures this  
for most applications. An internal resistor charges the  
soft-start capacitor which slowly ramps up the inverting  
input of the PWM comparator Vfb3. This insures the  
close to each other as possible with the intention  
that the source of Q3 and drain of the Q4 has the  
shortest length.  
output voltage to ramp at the same rate as the soft-start 3) Place the snubber R15 & C13 between Q4 & Q3.  
Rev. 1.5  
07/24/01  
14  
IRU3018  
4) Place the output inductor, L3 and the output capaci- Component connections:  
tors, C16 between the mosfet and the load with out-  
put capacitors distributed along the slot 1 and close Note: It is extremely important that no data bus should  
to it.  
be passing through the switching regulator section spe-  
cifically close to the fast transition nodes such as PWM  
5) Place the bypass capacitors, C8 and C19 right next drives or the inductor voltage.  
to 12V and 5V pins. C8 next to the 12V, pin 1 and  
C19 next to the 5V, pin 8.  
Using the 4 layer board, dedicate on layer to ground,  
another layer as the power layer for the 5V, 3.3V, Vcore,  
6) Place the IRU3018 such that the PWM output drives, 1.5V and if it is possible for the 2.5V.  
pins 24 and 22 are relatively short distance from gates  
of Q3 and Q4.  
Connect all grounds to the ground plane using direct  
vias to the ground plane.  
7) Place all resistor dividers close to their respective  
feedback pins.  
Use large low inductance/low impedance plane to con-  
nect the following connections either using component  
8) Place the 2.5V output capacitor, C18 close to the pin side or the solder side.  
13 of the IC and the 1.5V output capacitor, C17 close  
to the Q2 MOSFET.  
a) C14 to Q3 Drain  
b) Q3 Source to Q4 Drain  
c) Q4 drain to L3  
Note: It is better to place the 1.5V linear regulator  
components close to the 3018 and then run a trace  
from the output of the regulator to the load. However,  
if this is not possible then the trace from the linear  
drive output pin, pin 16 must be run away from any  
high frequency data signals.  
d) L3 to the output capacitors, C16  
e) C16 to the load, slot 1  
f) Input filter L1 to the C16 and C3  
g) C1 to Q2 drain  
h) C17 to the Q2 source  
I) A minimum of 0.2 inch width trace from the C18  
capacitor to pin 13  
It is critical, to place high frequency ceramic capaci-  
tors close to the clock chip and termination resistors  
to provide local bypassing.  
Connect the rest of the components using the shortest  
connection possible.  
9) Place R12 and C10 close to pin 20  
10) Place C9 close to pin 9  
Rev. 1.5  
07/24/01  
15  
IRU3018  
IRU3018 APPLICATION PARTS LIST  
Dual Layout with HIP6016  
Ref Desig Description  
Qty  
2
Part #  
Manuf  
Q3,4  
MOSFET  
IRL3103  
IRL3103S (Note 1)  
IR  
Q5  
Q2  
L1  
L3  
C16  
C14  
C3  
C18  
C17,C1  
C2  
MOSFET, GP  
MOSFET  
Inductor  
Inductor  
Capacitor, Electrolytic  
Capacitor, Electrolytic  
Capacitor, Electrolytic  
Capacitor, Electrolytic  
Capacitor, Electrolytic  
Capacitor, Electrolytic  
Capacitor, Ceramic  
1
1
1
1
6
2
1
1
2
1
2
2N7002  
MTP3055VL, TO-263 package  
L=1µH  
Motorola  
Motorola  
Micro Metal  
Micro Metal  
Sanyo  
Sanyo  
Sanyo  
Panasonic  
Panasonic  
Panasonic  
Novacap  
Core: L=2µH, R=2mΩ  
6MV1500GX, 1500µF, 6.3V,  
6MV1500GX, 1500µF, 6.3V,  
6MV1500GX, 1500µF, 6.3V,  
220µF, 6.3V, ECAOJFQ221  
680µF, 10V, EEUFA1A681L  
680µF, 10V, EEUFA1A681L  
0805Z105P250NT  
C8,19  
1µF, 25V, Z5U, 0805 SMT  
0805Z105P250NT  
C9  
Capacitor , Ceramic  
1
Novacap  
1µF, 25V, Z5U, 0805 SMT  
See Table 2, Dual layout component  
220pF, SMT 0805 size  
470pF, SMT 0805 size  
See Table 2, Dual layout component  
C10  
C13  
Capacitor, Ceramic  
Capacitor, Ceramic  
1
1
C9,11,  
12,15,20  
R12  
R13,14  
R15  
R20  
R6  
R8  
R5  
R7  
R17  
R19  
HS3,4  
Resistor  
Resistor  
Resistor  
Resistor  
Resistor  
Resistor  
Resistor  
Resistor  
Resistor  
Resistor  
Q1,3,4 Heatsink  
1
2
1
1
1
1
1
1
1
1
2
2.21K, 1%, SMT 0805 size  
10, 5%, SMT 1206 size  
10, 5%, SMT 1206 size  
10k, 5%, SMT 0805 size  
100, 1%, SMT 0805 size  
200, 1%, SMT 0805 size  
19.1, 1%, SMT 0805 size  
200, 1%, SMT 0805 size  
100, 1%, SMT 0805 size  
10k, 1%, SMT 0805 size  
6270  
Thermalloy  
R11,16,18, 21, 22  
See Table 2, Dual layout component  
Note 1: For the applications where it is desirable not to use the Heat sink, the IRL3103S MOSFET in the  
TO-263 SMT package with 1" square of pad area using top and bottom layers of the board as a minimum  
is required.  
IR WORLD HEADQUARTERS : 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.  
Data and specifications subject to change without notice. 02/01  
Rev. 1.5  
07/24/01  
16  

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