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IRUD200CH20PBF [INFINEON]

Rectifier Diode, 1 Phase, 1 Element, 240A, 200V V(RRM), Silicon, LEAD FREE, D-67, HALF PACK-1;
IRUD200CH20PBF
型号： IRUD200CH20PBF
厂家： Infineon    Infineon
描述：

Rectifier Diode, 1 Phase, 1 Element, 240A, 200V V(RRM), Silicon, LEAD FREE, D-67, HALF PACK-1

超快软恢复二极管 快速软恢复二极管 局域网
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Bulletin PD-21143 05/06  
IRUD200CH20PbF  
FRED  
Ultrafast, Soft Recovery Diode  
Features  
• Very Low Qrr and trr  
• Lead-Free  
Benefits  
• ReducedRFIandEMI  
• HigherFrequencyOperation  
• ReducedSnubbing  
Description/ Features  
Major Ratings and Characteristics  
These diodes are optimized to reduce losses and EMI/  
RFI in high frequency power conditioning systems. The  
softness of the recovery eliminates the need for a  
snubber in most applications. These devices are ideally  
suited for HF welding, power converters and other  
applications where switching losses are significant  
portion of the total losses.  
Characteristics  
Values  
Units  
I
Rectangular  
waveform  
240  
A
F(AV)  
V
200  
20000  
0.78  
V
A
V
RRM  
I
@tp=5μssine  
FSM  
V
@240Apk,T =125°C  
J
F
T
range  
-55to175  
°C  
J
Case Styles  
HALF-PAK (D-67)  
www.irf.com  
1
IRUD200CH20PbF  
Bulletin PD-21143 05/06  
Voltage Ratings  
Partnumber  
IRUD200CH20PbF  
VR Max. DC Reverse Voltage (V)  
VRWM Max. Working Peak Reverse Voltage (V)  
200  
Absolute Maximum Ratings  
Parameters  
IRUD200 Units Conditions  
IF(AV) Max.AverageForwardCurrent  
*SeeFig.5  
240  
A
50%dutycycle@TC=127°C,rectangularwaveform  
IFSM Max.PeakOneCycleNon-Repetitive  
SurgeCurrent *SeeFig.7  
20000  
2300  
5μs Sineor3μsRect.pulse  
Followinganyrated  
load condition and with  
ratedVRRMapplied  
A
10msSineor6msRect.pulse  
Electrical Specifications  
Parameters  
IRUD200 Units  
Conditions  
VFM Max. ForwardVoltageDrop  
1.21  
1.51  
0.9  
V
V
V
@ 240A  
TJ = 25 °C  
* See Fig. 1  
(1)  
@ 480A  
@ 240A  
TJ = 125 °C  
1.1  
100  
3
V
@ 480A  
IRM  
Max.ReverseLeakageCurrent  
* See Fig. 2  
μA TJ = 25 °C  
VR = rated VR  
mA TJ = 125 °C  
CT  
LS  
Max. Junction Capacitance  
TypicalSeriesInductance  
6000  
5.0  
pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C  
nH From top of terminal hole to mounting plane  
(1) Pulse Width 500μs  
Dynamic Recovery Characteristics @ T = 25°C (unless otherwise specified)  
J
Parameters  
Min Typ Max Units TestConditions  
trr  
ReverseRecoveryTime  
-
-
-
-
-
-
70  
88  
-
-
-
-
-
-
ns  
A
If = 200A, dif/dt = 200A/μs, Vr = 200V  
If = 200A, dif/dt =200A/μs, Vr =200V @ TJ = 125°C  
If = 200A, dif/dt = 200A/μs, Vr = 200V  
IRRM  
PeakRecoveryCurrent  
10.6  
14.2  
350  
630  
If = 200A, dif/dt =200A/μs, Vr =200V @ TJ = 125°C  
If = 200A, dif/dt = 200A/μs, Vr = 200V  
Qrr  
ReverseRecoveryCharge  
nC  
If = 200A, dif/dt =200A/μs, Vr =200V @ TJ = 125°C  
2
www.irf.com  
IRUD200CH20PbF  
Bulletin PD-21143 05/06  
Thermal-Mechanical Specifications  
Parameters  
IRUD200 Units  
Conditions  
TJ  
Max.JunctionTemperatureRange  
-55 to175  
°C  
°C  
Tstg Max.StorageTemperatureRange  
-55 to175  
0.19  
RthJC Max.ThermalResistanceJunction  
toCase  
°C/W DCoperation  
*SeeFig.4  
RthCS TypicalThermalResistance,Caseto  
Heatsink  
0.05  
°C/W Mountingsurface,smoothandgreased  
wt  
T
ApproximateWeight  
MountingTorque  
30(1.06) g(oz.)  
3(26.5)  
Min.  
Max.  
Min.  
Max.  
Non-lubricated threads  
4(35.4)  
3.4(30)  
5(44.2)  
Nm  
(Ibf-in)  
TerminalTorque  
CaseStyle  
HALF PAK Module  
1000  
1000  
100  
10  
175°C  
Tj = 175°C  
125°C  
1
100  
10  
1
0.1  
0.01  
25°C  
50  
100  
150  
200  
ReverseVoltage-VR(V)  
Fig.2-Typical Values Of Reverse Current  
Vs. Reverse Voltage  
10000  
1000  
100  
Tj = 125°C  
T
= 25˚C  
J
Tj = 25°C  
0
30  
60  
90  
120  
0.0  
0.5  
ForwardVoltageDrop-VFM(V)  
Fig.1-Max. Forward Voltage Drop Characteristics  
1.0  
1.5  
2.0  
2.5  
ReverseVoltage-VR(V)  
Fig.3-Typical Junction Capacitance  
Vs. Reverse Voltage  
www.irf.com  
3
IRUD200CH20PbF  
Bulletin PD-21143 05/06  
1
D = 0.75  
D = 0.50  
D = 0.33  
D = 0.25  
D = 0.20  
0.1  
0.01  
Single Pulse  
(Thermal Resistance)  
0.001  
1E-05  
1E-04  
1E-03  
1E-02  
1E-01  
1E+00  
1E+01  
t1,RectangularPulseDuration(Seconds)  
Fig.4-Max. Thermal Impedance ZthJC Characteristics  
250  
200  
180  
160  
140  
120  
100  
80  
D = 0.20  
D = 0.25  
D = 0.33  
D = 0.50  
D = 0.75  
200  
150  
100  
50  
DC  
RMS limit  
DC  
Square wave (D=0.50)  
80% rated Vr applied  
see note (2)  
60  
0
0
50  
100 150 200 250 300  
0
50 100 150 200 250 300 350  
AverageForwardCurrent-IF(AV)(A)  
AverageForwardCurrent-IF(AV)(A)  
Fig. 5 - Max. Allowable Case Temperature  
Vs. Average Forward Current  
Fig.6-Forward Power Loss Characteristics  
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC  
;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);  
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR  
4
www.irf.com  
IRUD200CH20PbF  
Bulletin PD-21143 05/06  
105  
100  
95  
100000  
10000  
1000  
Tj = 125°C  
Vr = 200V  
At Any Rated Load Condition  
And With Rated V  
Following Surge  
Applied  
RRM  
90  
200A  
85  
80  
100A  
200  
75  
70  
100  
300  
400  
500  
10  
100  
1000  
10000  
SquareWavePulseDuration-t p(microsec)  
Fig.7-Max. Non-Repetitive Surge Current  
di f / dt - (A/μs)  
Fig. 8 - Typical Reverse Recovery vs. di /dt  
f
Reverse Recovery Circuit  
V
= 200V  
R
0.01  
Ω
L = 70µH  
D.U.T.  
di F /dt  
D
dif/dt  
ADJUST  
IRFP250  
G
S
Fig. 9- Reverse Recovery Parameter Test Circuit  
www.irf.com  
5
IRUD200CH20PbF  
Bulletin PD-21143 05/06  
3
t
rr  
I
F
t
t
a
b
0
4
Q
rr  
2
I
0.5  
I
RRM  
RRM  
5
di(rec)M/dt  
0.75 I  
RRM  
1
di /dt  
F
1. di /dt - Rate of change of current through zero  
F
crossing  
4. Qrr - Area under curve defined by t  
rr  
and I  
RRM  
t
x I  
RRM  
2
rr  
Q
=
rr  
2. I  
- Peak reverse recovery current  
RRM  
3. t - Reverse recovery time measured from zero  
5. di  
/ dt - Peak rate of change of  
(rec) M  
current during t portion of t  
rr  
rr  
crossing point of negative going I to point where  
F
b
a line passing through 0.75 I  
extrapolated to zero current  
and 0.50 I  
RRM  
RRM  
Fig. 10 - Reverse Recovery Waveform and Definitions  
Outline Table  
HALF-PAK(D-67)  
Dimensions in millimeters and (inches)  
6
www.irf.com  
IRUD200CH20PbF  
Bulletin PD-21143 05/06  
Ordering Information Table  
Device Code  
IR UD 200  
C
H
20 PbF  
2
4
5
6
7
1
3
1
-
-
InternationalRectifier  
UltrafastDiode  
2
3
4
CurrentRating  
-
-
CircuitConfiguration  
C = Not-isolated  
Type of Device :  
H=Half-pak(D-67)  
5
6
7
-
-
Voltage Rating (20 = 200V)  
Lead-Free  
Data and specifications subject to change without notice.  
This product has been designed and qualified for Industrial Level and Lead-Free.  
Qualification Standards can be found on IR's Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7309  
Visit us at www.irf.com for sales contact information. 05/06  
www.irf.com  
7

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